TW200849322A - Method and apparatus for recycling semiconductor material, method and apparatus for making a solar battery - Google Patents

Abstract

This invention provides a method for recycling semiconductor material that can be realized at low cost. The method according to this invention comprises the steps of S11: recovering used silicon scraps (semiconductor silicon material), S12: performing a gettering operation for removing phosphor from the recovered silicon scraps, S13: deactivating boron contained in the recovered silicon scraps, S14: re-using of the silicon scraps that have been deactivated or treated to become free from impurities. According to this invention, a solar battery can be made by recycling silicon scraps at low cost.

Description

200849322 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a method and a regenerative device for regenerating a semiconductor material, and more particularly to a method for removing or deactivating a light element of boron or phosphorus from a semiconductor material. use. Further, the present invention relates to a method and apparatus for manufacturing a solar cell in which a solar cell is removed by removing these light elements from a semiconductor material. [Prior Art] A solar cell composed of a semiconductor material such as Shi Xi, etc., is currently a silicon wafer other than the specifications produced by the semiconductor industry such as IE LSI (Large Scale Integration). It is manufactured as a raw material ^ (Patent Document 1). However, from the point of view of environmental protection, the solar power generation method is better than other thermal power generation methods, so the demand for solar cells is increased by 10% or more per year. Therefore, in the above method using the specifications produced by the semiconductor industry, since the amount of the external product produced is limited, it is difficult to cope with the demand of the solar battery. As a method for solving this problem, a method of manufacturing a solar cell using a semiconductor of a material such as LSI. However, the purity required for ruthenium as a raw material for solar cells is greatly reduced as compared with the purity of ruthenium used for semiconductors. Specifically, the purity required for the pin for solar cells is 7 Ν (99·99999%). The purity required for yttrium for semiconductors is iin (9.999999999/〇) (generally referred to as n%). The energy consumed by Shi Xi of (10) is more than the energy used to refine 7N (4). 319336 5 200849322 This is a defect, and the semiconductor of the required degree of purity is used to cover the clothes and the solar cells. 'The loss of energy is a problem compared with this standpoint.' This is a problem. The mouth is protected by each environment. In addition, the stone eve used for refining solar cells is used in semiconductors. The method of producing the stone swarf. In the process of removing the sputum, it is necessary to remove the impurities contained in the swarf, ... mussels. The method of removing electrons from the electron beam is to remove the method ==, and the butterfly is given to the boron during the process of plasma smelting, and the yoshi material which can remove the phosphorus contained in the genus Shixia There are solar cells that can be used for the purity of solar cells [patent text] (Japanese Unexamined Patent Application Publication No. Hei No. Hei No. Hei No. Hei No. Hei. No. Hei. No. Hei. No. 10-324514. The eight-beam irradiation and the solar energy for the purity of the solar cell, and also: / can be used to regenerate the surface: U - aspects, at the time of the year, the materials sold in the market Therefore, the grid is side/kg. Therefore, in 2005, the solar battery used for 70 solar cells was regenerated by the above method because the price of the raw material was better because of the raw material. However, it was different from ... Change, therefore, the original miscellaneous ... has a lower cost than the above-mentioned stone solution 319336 6 200849322 yen / kg for the production of solar cells. For example, in the time point of 2 coffee year 'because of the price of raw materials It is about 2000 曰 round / kg, therefore, at this time; the method of producing Shi Xi, used in solar cells, is more disadvantageous in terms of cost. In addition, although (4) (3), etc. are manufactured in semi-conducting, the process will be arranged. Particle-shaped semiconductors are 'but When the semiconductor genus is regenerated, it is not easily transported in a peak shape. In addition, in the middle of the semiconductor regeneration process, the particulate semiconductor genus is also scattered. Therefore, the object of the present invention is to provide : a method for regenerating a bulk material, a semiconductor material = a method of manufacturing a field battery, and a method for manufacturing a solar cell. (Means for solving the problem) Re-peak of the semiconductor material of the present invention = conductor material The step of moving the phosphorus to the semiconductor material and the separating step of separating the semiconductor material on the surface of the semiconductor material. Material: !: The method of regenerating the semiconductor material, recycling Semiconductor====_Regeneration method of material, the method for manufacturing the second heat application body is based on the characteristics of the recovered semiconductor material: Dream=Reuse solar cell manufacturing method, surface thereof The above-mentioned dish wide processing 'removal step of separating the semiconductor material moving to the above semiconductor material; 319336 7 200849322 T making the above half The boron contained in the conductor material is a non-activated non-activated = bright semiconductor material regenerating device, which is a semi-conducting device for removing the disc from the recovered semiconductor material, and is a regeneration device of the company, which is characterized by having two (four) borrowed The phosphorus moves to the semiconductor material: a surface: a heating device; and a separation device that separates the surface of the semiconductor material from the semiconductor material. f The regeneration of the semiconductor material of the scoop is a regenerative device for semi-conducting difficult materials made of semiconductor materials, characterized by /, heating and heating the semi-conducting ψ ^ , μ . , λ , and The hot donor body deletes the above into a non-activated non-activated device. The product of the solar cell of the invention is re-used as a solar cell; the widely recovered semiconductor material 44n A - the remanufactured device of the Tailing battery, which is known to have the surface of the heating surface m~ is moved to U+ of the above semiconductor material, and the semiconductor material is separated and removed, or the semiconductor material is removed from the device. The boron of 3 is a non-activated non-activated device, and is a method for regenerating a recovered semiconductor material, and the method for regenerating the semiconductor material of the present invention included in the material formed by assembling the aggregate is used to remove impurities and reuse the material. The semiconductor is characterized by comprising: a step of collecting the semiconductor material; and an impurity removing step of removing the impurity in a state of the aggregate. A semiconductor device for recycling a recovered semiconductor material, wherein the semiconductor material recycling device material of the present invention is used to remove impurities and reused. 319336 8 200849322 A device comprising: the semiconductor material is assembled to form an aggregate. And an impurity removing device for removing the stacked impurities of the semiconductor material 3 in the state of the aggregate. The method for producing a solar cell according to the present invention is a method for producing a solar cell in which the recovered semiconductor material is reused in addition to a battery, and the method of manufacturing the solar cell is to provide a collection of the semiconductor materials. And a step of removing an impurity which removes the impurities contained in the material in the state of the aggregate. . The solar cell manufacturing apparatus of the present invention is a manufacturing apparatus for a solar cell that uses a recovered semiconductor material as a solar cell, and the semiconductor material is assembled to form an aggregate: And an impurity removing device for removing impurities contained in the material in the state of the aggregate. (Effects of the Invention) In ancient times, the talents and inventions reduced the cost required for the regeneration of Shi Xi. Specifically, the door/1 reduces the cost required for the recycling of the solar cell to 100 〇 卩 卩 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而The η(4) packaged by the semiconductor material 2 recovered by heating is moved to the surface of the semiconductor material and then removed: half of the semiconductor chips are regenerated into a semiconductor material, so that they do not go forward: Therefore, compared with the semiconductor genus:: The prior art 'is more cost-effective to remove the scales 319336 200849322 匕 方 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 积极 积极 积极 积极 积极 积极Non-activated, while creating a virtual removal condition, therefore, the cost can be reduced compared to prior art techniques that apply plasma to the molten semiconductor to remove boron. A method of manufacturing a solar cell and a manufacturing apparatus according to the present invention. The solar cell can be manufactured at low cost by using the above method of removing phosphorus and shed. Therefore, the price of the solar cell can be greatly reduced to promote the use of the solar thunder pool. . Further, according to the method for regenerating a semiconductor material of the present invention, after the aggregates are aggregated to form an aggregate, the semiconductor material is removed. Therefore, it is possible to reduce not only the semiconductor::: but also the semiconductor which is recovered in the form of particles or powders. In addition, according to the present invention, the temperature of the semiconductor material is heated in the step of removing the scale from the surface of the semiconductor material. 900 C: Above 12 inches. By adding 埶 = body _ ' in such a temperature range, the semiconductor material can be kept off. Therefore, compared with the removal of the semiconductor material from the previous (4), the cost of the removal of the low-disc dish can be reduced.实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 > Outline of the regeneration method of the side). Each of ν; π 336336 10 200849322 is a flow chart of the μ (4) 3 method of regenerating a semiconductor hard material. In each method, the combination of the method of phosphorus and boron in the method of =2 is different. Included in the millennium planting ▲ Refer to the first! Figure (4), the semiconductor stone material is made into a 'system with the stone shards to be used (semiconductor stone october brother 1 sn; from the recovered stone swarf to remove the dish to recover the step f S12; The step of the butterfly contained in the crumb becomes the step of inactive step milk is removed or becomes non-activated. "Solar electricity / impurity is used = 14. The details of each step will be described in detail below:: In step S11 It is used in the semiconductor process. Recycling. For example, the steps of grinding the surrounding area by cutting the ingot and the stone chips to a predetermined diameter::::, making the stone continue to be = for a _-in == Mechanically adding the king to the loading wafer: side: water spray of the swarf _, etc., while mechanically adding the second swarf is also included in the steps produced in these steps, using a filter device or the like from the drainage stone Xi Shi to the second to recycle, etc., Shi Xi;, = press) to dehydrate the stone, then use the drying furnace so the sudden: because basically only the grinding of the machine, pure production and:: 1 ° about 90 High purity crumbs above /°. However, this use = this evening A solar cell of 7 Ν (99·99999%) purity is required, and a 硼-type substrate is introduced into a 硼-type substrate of boron (Β) and an N-type substrate into which phosphorus (ρ) J1 319336 200849322 is introduced, so the above-mentioned swarf is mixed with p The state of both the swarf and the n-type scorpion. Therefore, in order to be able to reuse the swarf, it is necessary to remove the impurities mixed in the swarf. In this form, it is in the following steps S12 and S13. The discs contained in the crumbs are removed and the butterfly is inactivated. In addition, in addition to the scales or the unique light elements, the Shishi shavings also include Ming (A1), iron (four), ca (Ca), etc. Heavy metal. In this type of towel, these heavy metals are removed by unidirectional solidification and purification using a small solid-liquid partition coefficient of heavy metals. This one-way solidification is a relatively low-cost and relatively simple process. In step S12, the enthalpy contained in the swarf is removed by degassing. Specifically, after the swarf is heated to about 10001: or so, the movement is moved to the surface of the swarf. The scale is then removed from the stone. The details of this step Referring to Fig. 2 (4), it will be described later in detail. In step S13, the swarf is heated at a certain temperature, thereby generating a hot donor body (thennal don noisy, and the inclusion contained in the % swarf is non-activated. The body is a plurality of oxygen atoms contained in Shi Xizhong, and emits electricity = and forms a phenomenon of knowing the rainbow, and there is also a case called oxygen donor (〇Χ·η plus gallbladder). In the process, once the hot donor is generated, the resistivity of the + conductor changes from the desired value, so the hot donor is regarded as a phenomenon that is unsatisfactory for the vehicle parent. In the present invention, in order to make the stone The included collar is non-activated and virtually removed, and the hot donor is actively utilized. A detailed description of the thermal donor will be described later with reference to Fig. 2(b). In addition, the hot donor of this step must also be carried out after the step S! 2 for carrying out the degassing of the phosphorus. The reason is that after the heat application 319336 200849322 body, if the swarf is heated to 100 (TC left female, the body becomes boron in the non-activated swarf, Kossa: degassing, reactivated by heat Therefore, this e is reused in the step S14 due to the heating at the time of degassing, and is reused in the above-mentioned step 'Non-activated Shixia. In this cow:: In addition to each, it becomes a solar cell. In addition, if we mention that the purity of the LST M can be used as the purity of the LST M, it can also be used for the semiconductors of the materials of the LSI Temple. It can be used in the next year. In addition, it is used in the refining of oxygen. Μ 与 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And any one of the steps su: two students: in the law, the process of "putting the phosphorus to be removed", and removing the sun, that is, removing the step S13 with the hot donor body to make the type矽 。. In addition, , , ', after which the phosphorus-containing n si si? m ', can only be removed by degassing the disc half ~ Do not make the boron become non-activated step sn - 'small boron-containing p-type swarf. You can proceed to S13, and then obtain the second method according to Fig. 1. This second party, = For the regeneration of the body stone material, the same symbol as $, , + / , and the same as the above-mentioned first method are added, and the description of the stone method is given. The second method of the method shown in the figure includes (4) To remove the gas by degassing; the boron is included in the soil to the step S12, the step of removing the swarf from the swarf is step s 15; and the swarf is given to i 4, less S1. That is, in the step S1 of the application body for reuse, and the method of the second embodiment, the method is used to perform the inactivation of the butterfly, but in the second method: 319336 13 200849322 .==Step S15 of the step is replaced by the same method. The other steps of the second method are the same as the above: f 乂Sl5 _ 'The stone shards are removed after the filling in step S12' Knowing that the spirit is mellow and become a dazzling stone, the water vapor is sprayed to the surface, and the boron and the oxidized person are removed. After the material is reduced, the oxidized butterfly is removed, and the carbon contained in the removed swarf is replaced by the carbon dioxide non-activated =:=the intermediate is not replaced by the .... According to the sequence of S1 and S15, the sequence of step S15 and the step S15 can be mutually exclusive, and the non-local f(i can obtain the half of the non-Bennnsie semiconductor which is obtained by subtracting both the disc and the butterfly. The third party + Γ (4) The third method of reproducing the semiconductor dream material. In the third method, the same reference numerals will be given thereto, and the description thereof will be omitted. The food shown in this figure. The step of recovering the swarf scraps S u . The group consists of the scales contained in the \ 钵 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不^ S16, the step S1 of hunting for the non-activation of the wind-cut horse by the hot donor body; and step S14. That is, the step of reusing the superior is called removing it, and in the method of performing the degassing for the tomb, the step S16 is replaced with the step S16. ...the steps are the same as the first method described above. In step S16 of the method, first, in step 8, the recovered m is pre-emerged. In the inactive gas environment of ~'咱卞,虱乳寻, keep the swarf 319336 14 200849322 square; l〇Pa to G. () 1Pa or so seam environment or... The dish is evaporated and removed. Since = he = steamed, the hairy ingredients' can therefore be shown. After the removal of phosphorus from the crumbs, the step (1) is carried out to make the person in the crumbs: X • a non-activated thermal donor, and then in the step s::, boron, or as a solar cell, etc. Reuse. In the third method, the third method can be used to remove the scale and make the virtual semiconductor. That is, the following: The conductor stone material is the same as the above method. In the case of the latter, the example of the use of the semiconductor material ((10) is regenerated. In this case, the other axes described in the following are also used. Phase < 2nd 钿 type evil. Detailed description of degassing and hot donor body> i Step = 2: In this type, it is described in the above steps _ and jin, 仃 除 及 及 and hot donor The second part shows the concept of the details of the rolling, and the second (Θ)^ head does not make boron non-activated. & The conceptual diagram of the details of the hot content of Tu Xi m. 2 (4) 'Describes the (4) from the 1 () to the gas (Geuering). The so-called degassing refers to the crowning : The disc 12 contained in the 1 移动 移动 移动 moves to the surface, ::= 吏 is collected by the trap. In addition, the surface is moved to the deleted surface: sexual or physical treatment, together with the oxide film Shi Xi shavings ; ;;:: In this figure, the black circle indicates phosphorus 12, square; 319336 15 200849322, in this step, firstly treat the granules of the stone stalks to make the swarf The particle size becomes smaller. / Into the 仵矽4 Emei 1 Ο Φ % 4 people 匕 'Because the heat treatment is used to move the U(4) 12 to the surface, therefore, when the particle size of Shishi 10 is small, The layer of the layer, the 隹-, and the genus of the genus are easy to enter. For example, the particle size of the swarf 10 is more than::, this: " In addition, when the particle size of the stone stalk is small, the pulverization treatment is not required. One of the particle diameters of the stone below the right is, for example, the diameter of the qing, the value of the average (average granule) In the case where the average particle diameter of the control is about L2 #m, the above-described degassing can be performed. Further, if the average particle diameter is used, an aggregate produced by cold pressing, which will be described later, can be formed as appropriate. 'M looot; The high temperature above and below will add about 10 minutes to the stone, and the phosphorus 12 contained in the stone shoulder 10 can be moved to the surface of the chip 10. The dish 12 is the mobility ratio. The substance of the butterfly is high. Therefore, if the skin of the stone (four) is heated to a high temperature, the contained dish will move to the stone genus: surface (grain, In addition, since the surface of the swarf is oxidized by oxygen in the environment by heat treatment, the surface of the swarf is covered with the oxide film _2. Therefore, #屑1G t is included. The phosphorus system moves to the inside of the oxide film II. Alternatively, the two are located at the interface between the chip 1G and the oxide film II (or near the surface of the genus, 10). On the other hand, it is contained in the chip. Since the diffusion coefficient of the butterfly is low, it hardly moves during the heating in this step. Since the heating step is not heated until the crumb is melted, the phosphorus is removed as compared with the melting of the crumb 10 The commonly known impurity removal method of Miscellaneous 5 can further reduce the heat required for phosphorus removal 319336 16 200849322. This point is also the same as the deletion from Dream 0. The oxide film u and the scale 12 are removed from (4). Since the heat treatment is performed by the above-described heat treatment, the two are located at the interface between the membrane 11 of the oxide film u and the chip 10, and therefore, Sa. Sub-oxide film 1, removed, and the same as _12: to remove:::: The method of removing the oxygen field and filling 12, for example, using mechanical polishing using a chemical polishing. The drying method or the use of the money engraving "will pass through the above heating step, and is mainly in the aqueous solution of chlorine acid (10)), so that the surrounding oxide film η is removed. Although the oxide film η will be condensed by chlorine acid, it will not react with the wind fluoric acid. Therefore, it can be done by = _ stone shards. . To (4) on the stone shards 1. Carry out:;=! It is necessary to carry out the cleaning of the crumb 10 and the separation of solid and liquid. In addition, when the water treatment and the drying are performed by the polishing, the coating is subjected to the surface polishing, whereby the removal of the phosphorus by the degassing can be performed with the removal of the oxidation medium 11, /kg ' The cost of the prior art (the method of removing the dish using the degassing of the 550 type of smuggling type, the cost is followed by referring to Fig. 2 (8), indicating that the chip 1 () becomes a non-activated heat donor. The nab of h is removed after the removal of phosphorus (4) chips (7). "(4) Hunting is performed by the above degassing, for example, in the temperature range of .C to Er, the stone swarf 1 319336 17 200849322 is included in the swarf ίο The continuous operation is heated for about 1 hour, whereby the boron 13 which generates the thermal dart becomes non-activated. ... the second explosion. In the middle of the system, there is a sheep, and the only one is the shell. The oxygen atom is generally maintained as a single, and: Carriers such as electrons or holes are supplied 'but in the above temperature range: two: a plurality of oxygen atoms will aggregate and emit electrons to form a donor body. With 上述 and t, by the above heat treatment, Produces a milk donor body of approximately 1〇16/mail 3. Due to this oxygen donor, it exists in Shi Xia, 1〇#The inner butterfly η becomes non-living, makes the crumbs! (4) The resistivity rises, and the state after the removal of boron 13 is formed. - Iron, as described above, in the general semiconductor process, The hot donor is considered to be a less desirable phenomenon. The reason is that if the thermal donor is generated, the resistance of the semiconductor converted to p-type or N-type will change. In this type, the system actively uses this. The heat application is difficult to physically or chemically; the boron removed by the method is non-activated, and the virtuality is removed from the swarf. In addition, after the above thermal application, if the swarf is made, When exposed to a high temperature of about 6 〇〇 or more, the oxygen donor will disappear and the non-activated boron may be reactivated. Therefore, in order to prevent the disappearance of the oxygen donor after the above thermal application, it is necessary to avoid the swarf 1() is exposed to 6 〇 (high temperature above rc. Therefore, the swarf 10 is heated to 1000. The degassing step of high temperature around 〇 must be performed before the hot application step. In addition, it is carried out for reuse. The melting step of the chip 10 must also be applied to the hot body step Further, in order to prevent the disappearance of the F/7 oxygen-suppressing body, it is preferable to avoid the rapid temperature change of the stone chip. 319336 18 200849322 <Third embodiment: manufacturing method of solar cell> In this embodiment, a method of manufacturing a solar cell is described as an application example of the above-described method for regenerating the swarf-chip. In this form, phosphorus is generated from the swarf generated in the semiconductor process. After the removal or the non-activation of boron or the treatment of both, the solar cell is manufactured. The manufacturing method of the solar cell of this type has the first manufacturing method for manufacturing a solar cell after manufacturing a p-type semiconductor substrate; A second method of manufacturing a solar cell after the core semiconductor substrate. Hereinafter, the i-th manufacturing method will be described based on Fig. 3, and the modification method will be described based on Fig. 4. - The first manufacturing method will be described with reference to Fig. 3 first. Here, the disc is removed by the above degassing, whereby a p-type semiconductor substrate having a residual shape is produced, and a solar cell is manufactured from the P-type semiconductor substrate. The following is a description of the polycrystalline solar cell & t π1 έ έ 曰 曰 曰 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘 耘Household "! The flow chart shown in Fig. 3 is basically composed of the steps of removing the collected stone chips from the cloud (step S31) and step (step S34). The following steps are described in detail in the heart A々 and the riding field. In the step S30, the tearing generated in the process is used to recover. This is the second step of the process description of the body. Refer to Figure 1 for the % SU question. In the collection of the imported Shi Peng W and the guide person. ^ (a) in the square; in step S3!, by unidirectional solidification to remove the stone layer Package 319336 19

I 200849322 I Heavy metals such as copper. In step S32, the ice contained in the genus Shixia; the method of removing the phosphorus may be removed by referring to the second river.除 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Therefore, the method is applied to a small number of regeneratives of the semiconductor material using the aggregate described later. "In the case of the method of manufacturing the cell, the step of the early/governing step may be performed without further steps. In the second set, there is a collection of the majority of the genus of the genus, and the phosphorus is condensed, and the process of the step S32, which removes the ox, is carried out in the state of the aggregate. In the swarf, although the dish is removed, it is a material of the type semiconductor. 胄 ϋ ϋ 含 含 于 于 于 于 于 于 于 于 于 于 于 于 于 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤In the production of polycrystalline solar 1# ^ 疋 的 夕 产 产 产 产 ” ” 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池 池At the temperature of the mouth, the stone swarf is dazzled: ^After the smelting, the 'single crystal pulling is carried out. In addition, when manufacturing the non-junction battery, it is at the temperature around the fan t, by using the stone. In the chemical method of the shoal body, a solar cell film having a thickness of about 500 Å is formed on the main surface of the substrate made of glass, etc. 3J9336 20 200849322 In the cut = Γ 34, the semiconductor wafer is obtained. The closing method is, for example, a cutting method using a multi-line mine. The wafer 20 obtained in this/hui is contained, and the degree is ... (four). ..., one, in step S 3 5, Oblique wafer 7 π Shi opened 4, ηπΛ, the surface of the circle was chemically etched, and the texture was textured. (5)) This structure was used to make the surface due to the difference in crystal orientation of the crucible.彤+1丨, formed by Gui. Hunting is made by the texture of the wafer 20, so The effect of being sealed on the surface of the wafer. = In step S36, 'pN bonding is formed on the wafer 2'. Since the wafer 20 is a boron-containing!>-type semiconductor, ^. the main thousand, therefore, in order to form the PN junction, the V-input will be known. To the wafer 20. In this step, the round 9 / which is 0 0 is heated at about 85 ° C for about 3 minutes. Imported dish U or N + type 曰曰® The periphery of 20 is converted into a protective film 21 formed on the surface of the wafer 20 in step S37. The film is made of Ti 2 and formed of (iv) cvd. In addition, the thin film 21 also has reflection prevention. The function of the film is as follows: In step S38, the back side of the wafer 20 is etched by a rod JJ. Specifically, the fault is removed by chemical etching using a hydrazine aqueous solution to remove the outer N layer. 'In step S3' The back electrode 22 is formed on the back surface of the wafer 20. In the case of the screen, the Ag paste and the A1 paste are printed on the wafer 2 by screen printing, thereby forming the back surface electrode 22. When screen printing is performed, 'b曰曰20 is at 20 (about TC is about heating! minutes. In addition, when sintering), wafer 20 is tied to 75 (about rc for about 丄 minutes. 319336 21 200849322 In step S40, the receiving surface electrode 23 is formed on the light receiving surface of the surface of the circle 1 yen, and the light receiving surface electrode 23 is formed by 22 ig π, which is opposite to the above-mentioned back surface electrode. Further, in this step After the opening is formed in the ▲ electric meter, the door, the blade, the ', and the only film 21 are formed, and the light-receiving surface electrode 23 is formed in the opening. In step S41, the solar sensor or the like is used. The characteristics of the formed solar cell < v are the tears of the inch and then the measurement is carried out. Only the inspection is passed (step S42). After the clothing step, the solar cell non-two T-type is completed, in order to make The concentration of the local part 1 = the virtual lowering (four) contained in the wafer 2〇 can be added to the hot-spotting method. Therefore, by using a hot donor body to make boron localized, the tongue can be raised The 谇 谇 丨 丨 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分There is a t-clip day "cage. θ f descending 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, S46, the steps in the step S40 are only caused by the locality of the singer, and the tongue is:, because: in the step s 4 6 p is not activated This does not adversely affect the S46, V formed in step S36. Therefore, the step of performing the local hot body application is achievable; the formation of the PN junction of the bull mop 〇a + "# S36 is performed after. Sw (4), or in the step of the system to refer to Figure 4, illustrate the use of N-type wafer solar cell clothing method 'this heart wafer system is included in the stone shoulder, local non-live 319336 22 200849322 • In the fourth figure, the same symbol is attached to the same drawing in the virtual drawing of Fig. 4, and the description thereof is omitted. Step (3) towel, after the scraps are recovered, by removing the solids from the swarf and removing the copper, etc., or by unidirectional condensation s = as described above, • forming a scorpion right, the heart corpse and hunting The stamping process is divided into two groups: the assembly of the S43 disc. After that, the assembly is subjected to the step f 3Fig. 4343, which is removed locally from the Shishi shavings. 1 In the t method, although in step S32, all or most of the steps == are removed by degassing, etc., but in this step, only the scales of the Localized removal. By this, the value is fixed. 1: When the concentration of the scale is too high, the concentration can be lowered to (10). In the second step, the heating temperature at the time of degassing is shortened or the heating phase/square is shortened, and the step S33, the step S34, and the step S35+ are performed. After the recording, the bismuth ingot is cut to fabricate the wafer 2〇, 矣"槿U 丄& I, the surface of the sunday® 20, and the two of the wafers 20 obtained after the inverse 834 are in the PN^ manufacturing method. The coffee starts to form S44. Also: 1 between S4'' is used to carry out the step of bonding the hot donor body ^吏石朋 diffused in the wafer 2〇 to form Np U4), first heat application body. The reason for this is that if the NP bonding is formed after the NP bonding is formed by the injection of 319336 23 200849322, the wafer 20 is formed into a whole type, and the whole of the wafer 20 is formed. The crystal•round 20 cannot be used as a solar cell. The details of the thermal donor are the same as those described in Fig. (B). Step S44 for the purpose of relocating the hot body must also be performed after the casting of the crucible. The reason for this is that in the step (3), the crumb is heated and melted at a high temperature of 1000 C or higher. That is, if the thermal donor of (4) S44 is carried out before =7, the non-activated boron is activated by the hot donor, and is reactivated during the heating in step S33. After the wafer 2 is processed for the step S44 of the hot donor, the inclusion _ becomes inactive and the virginity is removed, and the splicing is included in the dish. The sputum spreads to form a step. In the step S36 shown in the figure, the smash is introduced. Therefore, in the too% battery in which the manufacturing method is positive = step, and the 六人六+本^厂衣衣W, the Γ has non-activated rot and does not become activating activation of the butterfly two = step S37 The protective film 21 is formed, and the part is engraved in step S38, and will be removed except for the light receiving surface. Further, in step S39, step #40 is formed as #r + 4T to form the lunar surface electrode 22, and in the step S40, the electrode is formed again, and in step S4i, the solar cell is completed in step S42. ~Pay to the prosecution; in the Shangdi administration method, after S44, it must be narrower > Li Dingren, ~ the steps to use the hot body to practice the magic page will not activate the non-activated Shi Peng. For example, 3] 9336 24 200849322 If the wafer 20 is exposed to a temperature above 600 °C for about % minutes, the material is inactivated (four) times. The processes after ^(4) are not accompanied by such high, =: reactivate boron. In addition, in the above-described method for manufacturing a solar cell, a p-type or N-type wafer is manufactured from any one of the swarfs, but the method shown in Fig. 1 (8) can be used, for example. Manufacturing (4) and (4) materials

A wafer composed of an intrinsic semiconductor. And you can also use the essence == to make solar cells. In addition, this wafer can also be used to: find materials for other semiconductor devices for LSI. <Fourth embodiment: Configuration of semiconductor material reproducing device> In the present embodiment, referring to Figs. 5 to 9, it is said that the semiconductor material is regenerated by the semiconductor material reproducing method. . Each of the drawings of Fig. 5 shows a schematic view of each of the reproducing devices, and Figs. 6 to 9 show a plan view of the respective thin parts included in the reproducing device. Further, in the following description, in addition to the regeneration of the semiconductor material, a solar cell manufacturing apparatus is also mentioned. In the fifth photograph (A) of the tea photograph, the shavings recovery device, the regenerating device 30A, and the solar cell manufacturing device 42 are shown in the figure. Further, the regeneration device JA includes a phosphorus removal device 34 and a heat application device (non-activation device). Further, the swarf is processed in order from the apparatus on the upper side of the paper to regenerate the swarf and manufacture the solar cell. The swarf recovery I is set as a means for realizing the method described in the step S31 of Fig. 3. For example, a filter device including a 319336 25 200849322 ruler containing swarf, or a filter press for dewatering the drainage may be employed as the swarf recovery device 32. As described above, in the swarf collected by the apparatus, the swarf introduced into the phosphorus and the swarf introduced into the boron are mixed. The regenerating device 30A is a device for removing or deactivating impurities contained in the collected swarf, and is composed of a phosphorus removing device 34 and a hot donor device 40. The device for removing the phosphorus contained in the swarf is composed of a deaerator 36 and a separating device 38. The degasser % is used to make the swarf in a substantially uniform manner by heating the swarf The device includes a device for moving the degassing treatment to the surface of the chip. Further, the separating device 38 is a device for polishing the device, and is a device for separating the moved filler from the stone chip. 40 is a method for heating the stone chips at a specific time and temperature, so that the butterfly contained in the swarf is inactivated and the dummy is removed. The swarf after the regeneration treatment by the regeneration device 30A is in the phosphorus The virtual state represents the state of the intrinsic semiconductor H. Here, if the recovered swarf is, for example, either N-type or p-type, the regenerative device 3GA may be Degassing | set % or hot body suit 40 The V Yang private pool clothing xe clothing and 42 is a device for manufacturing a solar cell by using the semiconductor material after the reprocessing device 3A. For example, the step after the step S34 for realizing the third figure is performed. The device is formed, that is, the device for cutting the wafer 20 by Shi Xi key (step S34), on the wafer 319336 26 200849322

• A device for forming irregularities (texture) on the main surface of 20 (step S35), a device for forming a PN, a device for introducing phosphorus into the bonded wafer 20 (step S36), and a protective film 21 formed on the upper surface of the wafer 20. The device (step S37), the device for etching the back surface of the wafer 2 (step S38), the device for forming the back electrode on the back surface of the wafer 2; 22 (step S39), receiving light for the wafer 20 The device for forming the light-receiving surface electrode 23 (step S40), and the device for inspecting the characteristics of the solar electric field formed by using these devices (step S41), etc., form the solar device 42. Fig. 5(A)' Here, the chip recycling device and the regeneration device may be combined with each other in a solar cell manufacturing device, and may be regarded as a solar cell manufacturing device. Referring to Fig. 5(B), the composition of the reproducing device 3〇B shown in the other types of reproduced skirts will be described.

Λα M . _ The present invention is the same as the configuration of the above-described reproducing apparatus 30A. Regeneration device fine and regenerative device 3 = (1). &quot; is a hot body device 4. In the case of the state =, where to go, in contrast to #± to 3()b 褒 where to remove the material. The regeneration device 3 is the same as H = device 30A. Specifically, in terms of composition and regeneration, in Figure 5 (attached, the display reproduction device 4» "上+ / ww sigh 32, clothing place and too% battery manufacturing device 4 including scale removal device 34 and electro-convergence To regenerate the "shoulder system% system is composed of the degassing device 36 and the separation unit. In addition, the phosphorus removal device consists of μ, +, + # 夂刀雕衣14. The middle &quot; word stone removal device 44 is used by The plasma is irradiated to the material, and the boron contained in the genus t is contained in the t 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 In the regeneration device:, ..., the qualitative generals are removed from the genus. Therefore, the semi-conducting materials regenerated by the above-mentioned structure are both fine and boron, so the purity is It is higher than the semiconductor hair material regenerated by the regenerating device 30. Referring to Fig. 5 (〇, the other types of regenerative devices are described. The spit 1 structure is the same as the feeding line: The difference between the arrangement 30A and the regenerative device 3QC is that the regenerative placement has a dish removal device 34 and the regeneration device 3qc. In addition, (4) to remove 46. Also in the regeneration regulations, the electron beam is used to shoot the electron beam to the molten (4), thereby removing the material contained in the 7 chips. Specifically, The regenerative vibration shown in the figure is 3〇c, and is provided with a feeding removal device 46 and a thermal donor device 4〇. The heating stone dance removing device 46 uses an electron to irradiate the electron beam to the high vacuum degree (4). In this way, the dish is removed from the dream. Further, in the hot donor device 40, as described above, the boron contained in the chip is made non-activated and the boron is virtually removed. The regenerated semiconductor material is in a state in which the disc is removed and the boron is inactivated (hot donor) and virtually removed. If the three regenerative devices 3〇A, 3〇B, 3〇c are compared, the regeneration device 30A The semiconductor chips can be regenerated at the lowest cost. The reason is as follows: In the ash regeneration, the JOB and j〇C are used to melt the chips, but in the regeneration device 30A, although the steps of heating the chips are not performed, the melting is not performed. Therefore, in the regenerative device 30A, since it is not necessary to raise the temperature of the device to be The degree of melting is such that less heat energy is required, and 319336 28 200849322 矽 can be regenerated at a low cost. Pulling φΪί Referring to Figs. 6 to 9, the configuration of each device of the above-described reproducing device 20A will be specifically described. • ^ ^ Ϊβ)^6^ 53〇SB(7&quot;Γ#±^£3〇Α^ • λ. M ^ — Phosphorus removal device 34 included in Dansheng Garment 30B ::Display, show =!38 The structure of the structure: the section of the section of the 'Fig. 6 (C) shows 34 俜 and prepare ^ # Figure (A) the phosphorus removal device that removes the phosphorus from the swarf except for =6 =:: to, the separation of the eight Phosphorus on the surface of the smashed swarf, which is chipped from the swarf: L 38. More specifically, in the degassing device 3 &quot;, dream: = is a tender material compound): in this, the tantalum oxide system and the phosphorus one knife carving i Μ if generated in the heating step, In this case, the emulsifier is formed by reacting oxygen with the swarf. Also, there is 36 main = 4th = in the air before heating: the configuration of the deaeration device 36. Degassing device Jinzhi 'has the stone official 48, the import unit%. The quartz tube 48 is provided with a heat-resistant portion, a heating unit, and a heating portion. The housing is provided in the interior of the quartz tube, and the L-in portion 52 is connected to the right side. . Further, the introduction portion 52 is provided with a stone center, and the inside and the outside of the 4 48 are connected to the inside and the outside of the quartz tube 48. Then, on the left side wall, the required gas 56 is guided, and the enthalpy, the inlet portion 52, and the degassing money is discharged from the discharge portion 54 to the outside through the gas 58 319336 29 200849322 ' of the quartz tube #. The heating state: 0 is set in the quartz tube 48, and the inside of the quartz tube 48 is heated to a specific temperature. A heater can be used for the heater 5〇. ^ The quartz boat 60 is formed of quartz and is used to accommodate the chips 62. Device. Inside the quartz tube 48, a degree monitor 92 composed of, for example, a thermocouple is provided. Here, a storage container made of alumina may be used instead of the quartz boat 60. (The following is a description of the 'degassing method' using the chip 62 of the deaerator 36 having the above-described configuration. After the chips 62 are placed on the quartz boat and stored, the quartz is transported to the quartz tube 48. In this case, the aggregate formed by the assembly of the particle-shaped stone chips 62 is placed in the stone boat 60 and stored therein. Next, the gas 56 is introduced into the quartz tube from the introduction portion 52. In the "48", the heater 50 is energized to heat the internal environment of the quartz tube 48. ... 6 can be introduced with argon or nitrogen, and the pressure is ο. (10) or more and 760T rrrr or less. Here, -; The environment around the sea, the shovel 62, and the households are considered to be 92. The monitoring is held at W, and the internal temperature of the lower tube 48 is maintained. The temperature of the part is higher than the stone, and the temperature is 0. The tube 48 is destroyed. , ^ ^ Just above 2 hours, the continuous operation of the corpse at this temperature, not 4 〇.5 small day defensive 'the degassing is not fully carried out, may be "the evening ... residual scales. Another - On the aspect, if this time is 2 hours to 3] 9336 30 200849322 = then exceeds the need for degassing (4), resulting in regeneration 4"::: after the heating is lowered, after the heating of the heating is stopped, the internal environment of the quartz tube 8 is lowered to room temperature, and then taken out to the outside with the chips 62. 77 1] The state of the above-mentioned swarf to the surface of the stencil 2. The movement of the squirrel is shown in Fig. 6 (〇, explaining the structure of the separation device % in which the phosphorus on the surface to be moved is separated. Mainly, it is provided with a mesh bag 66 for accommodating a storage container through a degassing: a swarf, and a tank for storing a chlorine acid sample: water: pure water: by feeding the mesh bag 64 'The mesh bag 66 can be moved up and down and horizontally. ^68 For example, the fluorine material is a material, and is stored inside: (::). Chlorine fine: one with a corrosion-resistant iron gas dragon For example, the concentration of the hydrofluoric acid is, for example, 5%. The groove 72 is formed of, for example, a material such as iron gas dragon, and the water therein is 74. In addition, the conveyor belt 64 The hole bag 6 6 is sent, #:: The middle 'slot 72 is arranged in the rear part of the groove 68. The storage is stored in the second to the water 74 series. In the cleaning treatment of the two of the chips 62, it is also possible to use the conveyor belt 64 == to: a plurality of grooves 72. The following is a description of the use of the separating device 38 of the above configuration from the chip. 319336 31 200849322 The method of separating the discs on the surface. In the first place, the Shishi chips 62 which have been subjected to the above degassing treatment are stored in the mesh:: the part. Here, the shape is processed by the coffee. = the number of diameters is em and the thickness is a number of (10) ingot shape. Therefore, it is easy to carry out the transport of the debris 6 2, and the mesh of the perforation 66 can also be formed sparsely. r = medium, which is shown in the mesh bag 66 only has a set of = but a large number of hundreds of or so can be accommodated in the mesh clothing %. The mesh bag 66 is suspended from the conveyor belt by a metal cable. Mobility = by the conveyor belt 64, the mesh bag containing the stone chips 62 (4) The hydrofluoric acid stored in the tank 68 by the sub-beauty 76 is surely the material (4) will exist on the surface of the "62" (four), 彳When ^^Γ ° In addition, there is a compound R on the surface of the chip 62. This compound can be separated from the dish to remove the amount of the product, and the main =: the time of the day 70, for example, 〇 5 minutes or more 1 If the time is less than 0.^ minutes, the etching treatment of the swarf 62 does not remain in the swarf 62. 遽# _ _ _ L f T 匕 或 or Wei Wei. In addition, if the above time ratio 10 The process efficiency becomes poor. Once this step is completed, the drive is fortunately 64, and the mesh bag 66 is moved from the groove 68 to the groove 72. The dynamic storage ΪΪ 仏 收 收 % % % % % % % % % In the tank 72, the water 74. In this step, the immersed hydrofluorene 7η $ ” 人 ❿ 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62 The number of times that the number of the Shida's discs can be treated is as follows: the number of times that the number of times of the Shida's discs can be sub-green, and the number of tanks 72 is equal to or less than two. In addition, in order to further 319336 200849322 Γ this step, can also (4) 72-(10)μ and then refer to Figure 7, illustrating the hot body dream: the device is not activated. The heat application shown in this figure is the degassing device shown in Fig. 6: two. Specifically, the thermal donor device 40 is composed of a heater 90 of a stone-hot quartz tube 76; the quartz tube/6 is used to connect the external portion with the outside, and the gas 84 is discharged out of the cathode. Inside and outside the tube 76, the sisters stop the righteousness and control the exit P 82. This Yingzhou: The lower part of the stone, 86' is placed under the stone and the boat 8, and is stored inside the quartz tube 76. Treatment:: Γ明: Use! Body device 4. The hot body of the braid 6 is placed in the inner space of the quartz tube 76. Then import from . The gas 78 having been rolled or nitrogen gas was introduced into the quartz tube %. The pressure of the gas 78 is, for example, 〇.〇]τ〇η. Dream this: the inside of the two IS quartz tube 76. The introduced gas 78 is finally discharged from the discharge port 82 to the outside. 7 is synchronized with the introduction of the gas 78 by means of a heater 90 for heating the quartz tube, 6. The internal temperature of the quartz tube 76 is monitored by the temperature monitor 94, and the heater 9 is controlled based on the output from the temperature monitor 94. In this step, the quartz #76 white internal temperature (that is, the heat of the stone * * * 86, pull 41 two, think of 3 (Hrc above 5. ° °. Below, the set value for example. By controlling the internal temperature of the quartz tube 76 of this step to the range of 319336 200849322, the boron contained in the chip 86 can be deactivated, and the boron is virtually removed from the chip. On the other hand, if quartz When the internal temperature of the tube 76 is less than 300 ° C, the hot donor cannot be generated, and the boron cannot be virtually removed. Further, if the internal temperature of the quartz tube 76 is higher than 5 〇〇, the heat generated is higher. It will disappear and the boron cannot be removed virtually. Next, referring to Fig. 8, the structure of the electric blade removing device i 44 which is substantially removed from the stone chip 1〇6 and the (4) removing method by the device will be described. The plasma removing device 44 shown in the figure includes a quartz tube 96 in which a * is formed inside, and a discharge portion that connects the internal space of the quartz tube 96 to the external space of the outside of the quartz *% to the outside: Quartz boat 1 〇 8; temperature monitor for measuring the internal temperature no; A plasma torch U2 for generating electricity and a nozzle u4 for generating water vapor. 3: a structure of the British tube 96, the introduction portion 100, and the discharge portion 1〇2, and the quartz described in the figure (8) can be clamped. The tube 48, the introduction portion, and the discharge portion quartz boat 108 are made of a device having a high heat resistance such as quartz and containing an aggregate state or a particle state: 成=, except for the swarf 1 〇 6 is melted, therefore, the shape surface I® of the stone boat 1 08 does not allow the molten liquid W 1 () 6 to flow out to the outside. The temperature monitor 110 is placed in the quartz boat and is measured here. The temperature, , , or /, in the vicinity, and the method of using the plasma removing device 44' thus constructed to substantially remove the material contained in the genus 319336 34 200849322, will be described. The quartz boat 108 is housed inside the quartz tube %. f The heater is heated by a heater not shown in the figure to heat the quartz tube %, so that the stone shards 1 〇 6 are melted. In order to melt the swarf 106, the quartz tube 48 must be Internal force; ',,, more than 1,300 c. In other words, 'to make Shishi shavings 1 06 The removal of the unique plasma removal device 44 is more than the thermal energy of the non-activated thermal donor device. In addition, in synchronization with the heat treatment, argon gas or Nitrogen gas (gas 98) is introduced into the inside of the quartz tube %. Thereafter, the gas filled into the quartz tube 96 is finally discharged as a gas to the outside. When the cake is melted, the plasma torch 112 and the nozzle are used. N4, the boron is removed from the liquid crumb 106. Specifically, the plasma gas of the gas containing the plasma is sprayed from the electric torch to the hard waste (10). At the same time, the water vapor is sprayed to Shi Xi @ 1〇6 via Hezui 114. The electropolymerized gas from the electropolymers and the water vapor ejected from the nozzles 114 reach the same point as the liquid surface of the shavings 106. Here, it is also possible to bring the hydrogen to the crumbs &apos; 106 together with the water vapor. Thereby, the state of boron boride contained in the chip 1〇6 is removed. Once the wire is scraped from the chip 1G6 by the above method, the chip 1 is removed from the quartz tube 96 after the inside of the quartz tube 96. : The treated chips 1〇6 after this treatment are in a state after boron removal. 'Working Referring to Fig. 9, the structure for removing the scale from the stone chip 120 is removed, and the structure of the wall removing device i 46 and the removal of the dish by using the device are shown. 319336 35

I 200849322 j I The heated soil removal device 46 includes a processing chamber n8, a discharge portion 124 that is pulled out from the processing chamber n8, a pump that communicates with the internal space of the processing chamber 118 via the discharge portion 124, and an electron beam application. To the 12 〇 矽 电 , , , , , , , , , , , , , , , , , , , The chip stored in the quartz boat 122 as a storage container is stored in the inside of the processing chamber 118. f The processing chamber m is a storage container made of a metal such as sUS (Stainies Used Steel), and is formed to have mechanical strength that does not cause deformation even if the inside is in a high straight state. Further, the fruit 126 is, for example, a rotor pump, and communicates with the processing chamber 118 via the discharge portion 124, thereby accommodating the internal space of the processing chamber 118. In addition, the electronic robbing 116 has a function of converting the electric power supplied from the processing chamber I 8 to the galvanic power supply. The removed and sprinkled phosphorus of the phosphorus removal device 46 is removed. The first one is stored in the interior of the quartz chamber 118. The boat-2 is stored in the place 126, and the work space in the inner space of the processing chamber is sucked to process the heat of the processing chamber. And melting.: = Simultaneously, the crumbs 12 will be added and then the electrons will be robbed and run around 116. The crumbs are 2 〇. By doing this, and the electron beam is irradiated to the molten crucible to evaporate. Phosphorus contained in the swarf 120 can be 319336 36 200849322 &lt;Fifth Embodiment: Regeneration method and regenerating device 〉Subform==中' Referring to Fig. 1 to Fig. 12, the description is made of granular In the present embodiment, the semiconductor material of the prior art/regeneration device is the same as that of the prior art/regeneration device. The name of the second pass and the stamping process for the particle state of the stone are two!, :: The matter is the 'post' will be the scale of the inclusion and the second: the state of the assembly of the two f ± first refer to the first. Figure, illustrating the implementation; ::::: except the point. =. The first. Figure (4) shows again Method: Figure, m again: System - shows the block diagram of the regenerative device. "Dia 10 (8) Regeneration? (4): Describe the semiconductor of this embodiment of the complete collection of the method of regeneration Step S51, the steps of forming the aggregate, returning: step r; and saying that the step of reusing and the step S53 of removing the four shells are regarded as the swarfing step S51 The particulate sand map r generated in the process: the details of this step are the same as the above-mentioned recovery step (for example, "the next step S30"), and the The stone swarf is recycled. Ripple

In the step (5), the stone swarf recovered in the step (5) is subjected to enthalpy: forming an aggregate. Specifically, the swarf is subdivided into a predetermined amount of knives and the swarf after the knives are subjected to press working to form an aggregate. By "Tian Cheng, for example, a collection of round shapes. In this step, the shape of 319336 37 200849322 is applied to the stone, so that the stone chips gather to form a solid aggregate. ^ That is, Do not use a binder composed of a resin material or the like (adhesive-to-between. Prepare ... between the swarfs, open X has a fine space. In addition, in this step, heat is not applied to the stone swarf = press processing, This processing method is called cold (four). In addition, two: 集合 = = the aggregate ' can also be called a house shape or solid body. Those, not a 脰 formation, can also be divided into: the factory is a collective The step of the shape, and the step of the state of the temporary assembly into the outer body. The step after the step is to carry out the impurities of the state of the dew-pair pair of the aggregates. Phosphorus and boron are used in the treatment of 昭 丨Ρ Μ Μ Μ 闰 闰 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此In the middle of the package ^ brother, degassing treatment of the degassing surface; and will move to the surface of the stone swarf \ = stone to Separation treatment of the swarf swarf. Thermal application system;: genus is divided into time, _ contains two; two = "hot treatment. The oxidation step is to plasma gas and 7 === go (four) f :, contained in, to be substantively gone: melt;;: the electron beam is irradiated to the melted, :; step. In addition, the ^ ^ disc is substantially removed. 4 The details of the steps for removing impurities from the genus, 319336 38 200849322 are described in the other embodiments described above. The body is followed by the formation of fine-grained (four) chips into a collection of this wood. In the state of the s body, the above-mentioned miscellaneous material can not only improve the handling property of (4), but also can prevent the phase-cutting process by adopting the above-described solar cell manufacturing method. By using the easy-to-face: face step 52 for the solar cell The manufacturing method is easy to transfer, so the cost required for the manufacture of the solar cell can be reduced. ~ 128 == Figure (8), in this figure, shows the debris recovery device regeneration garment and 132 and solar cells Manufacturing device 142. Here, these devices may be It is considered as a regenerative device. The regenerative device (3) can also be regarded as part of the device for manufacturing solar cells. 丄 In addition, the 'regeneration device 132 is provided with (4) a collection device (10), a dish removal device 134, and a facility. L. ^, her dressing 140. In addition, in the phosphorus removing device 134, the degassing device 136 and the separating device 138 are included. Here, (4). Therefore, the material is removed by the scale to remove U 1) 4 and The butterfly becomes a non-activated virtual silk heat application device 140 as an example of the impurity removal device 144. Here, the configuration of the reproduction device 132 can also be changed. (4) The dish removing device 134 shown in Fig. 6 can be replaced by the disc removing device 134 shown in Fig. 6 (b). In addition, it is also possible to use the electric enthalpy shown in Fig. 5(B) to indicate that t 44 44 ′ is substituted for the 施, ρ, 弋 川 图 图 (Β) not the hot donor device ι4 〇. By this, it can be removed from w(d) and removed to regenerate 7" to obtain the essence of 319336 39 200849322 into a soft corpse:: brother 11 figure' to illustrate the detailed structure of the swarf collecting device 130: w device 13 〇纟 has a punch (punch) ) i46, die H punch 148, pressurizing portion 154, pressure gauge ... and pressurizing rod «two: Γ:! metal material such as iron, which has a circle = between, and the size of this" corresponds to The formed inner body has two sides inside the shape; it is inserted into the space of the shell particle 150 without a void. The punch 148, which is inserted into the die 150 above the defending head, has an internal space that is inserted into the die 150 in correspondence with the punch 146. u The lower insertion pressure portion 154 is a portion to which the punch 14 is placed, and the pressure gauge 156 such as a hydraulic pressure or a motor is used to display the (four) 154 position, and the analog display mode or the digital position is used. Display method. 4: The pressure (4) is a portion where the driving force is applied to the (four) 154. It is the method of using the stone scorpion scorpion to install the scorpion-body m to form the swarf 152. In the first place, the die 15 is placed on the front, and the chip 152 is stored in the inner empty door of the die 150. p is maintained in a granular shape, and may be pre-formed in the shape of the sharp upper shape in advance # &amp; / ^. Next, the punch 146 is inserted from the upper side into the inner pressure bar 159 of the die 15 ,, and is applied to the stone chip 152 from the pressurizing portion 154 ° C. The inch force is applied by rushing 319336 40 200849322 At this time, the force applied from the punch 148 to the stone chip 152 is, for example, 300 MPa or less. By setting the force to this range, it can be formed into a whole body and formed in the space of the I#.婪 | / / / : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : On the other hand, two = may not be able to form the required fine space in the interior of the stone swarf 152] 0 r Referring to Fig. 12, the separation dream of separating the surface of the debris (aggregate 158) is illustrated. Department η shows the second Γ f and separation method. Fig. 12 (8) shows the graph of 138 and 138, and Fig. 12 (B) shows that the hydrofluoric acid 7 〇 is determined by the 1 (70) of the aggregate (5). Violation of m. ... the mesh of the storage assembly 158 = the structure is provided for: the bag 66 for the circumference; the locking means for the cable is "moved in the longitudinal direction and the lateral direction" by means of a locking means such as a cable: 7 〇 (saki _" and storage Water 74 (pure water is formed by the stone swarf collecting device 13 所示 shown in Fig. U, and is inserted into the mesh bag 66 to be immersed in hydrofluoric acid 7 〇. For example, in the Xixi 7〇, which consists of Shishi chips, 0.5 minutes in the middle of the 以 Π 拉 又 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 。 。 。 。 。 。 。 。 158 158 158 158 158 After the wet type of the gas acid is removed, the flat rm (aggregate 158) is removed. At the end of this, the assembly 158 which is sent to the tank 72'/"hole bag 66 is moved by the belt 64. The aggregate 158 is immersed in the leeches accommodated in the tank 7 ′′, and is washed by 319336 41 200849322. That is, the 妒 7 remaining on the surface is referred to as the shard of the wooden splicing 158: % or occupational acid 7G, can be removed from the bite washing treatment for 0.5 minutes or more, and the number of times of this washing treatment can be 3, ·, into the 仃. The cleaning process is 158 times or less. The cleaning process can therefore enter the interior of the assembly 158 through the gap. Therefore, it can be placed in the assembly 158 7 and washed. 7 Scrap, fully carry out this ^12_, indicating the situation of the composition of the aggregate] 1 =; This pattern is the cut-set of the part - =SI::. By forming multiple "chips" to form a body Between the swarf and the swarf, there is also a phase formed by two: in the type: %, which does not heat the swarf 62 and performs the so-called cold stamping at room temperature, _ this shape #, 隹 ϋ ϋ ϋ The chips 62 are each other: the two bodies 158. Therefore, the adjacent dreams 61 t Ρ Ρ Ρ / 亚 亚 以 叩 叩 叩 叩 点 点 点 点 点 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接 邻接Therefore, the inside of the (four) two ... 158 for the wet type (4) is the gap between the stone chips 62, and the silk acid 70 of the 2 is the swarf 62 of the warp portion. After that, the ^ is located in the set. The inside of the body 158 is beneficial to the hydrofluoric acid 70 reached by the intrusion, and the bamboo attached in the interior of the assembly i刈 is removed. Impurities and the like [Simplified description of the drawings] Fig. 1 shows a method for reproducing the material of the main body of the present invention. 319336 42 200849322 Intention, (A) to (C) are flowcharts. The invention shows the intention of the sacred carving of the present invention, and (8) shows the method of regeneration of the degassing ~ and the stalk material. 'A heart θ, (B) shows the concept of the hot donor body' 》3 A flow chart of a method for manufacturing a solar cell according to the invention. Fig. 4 is a flow chart showing a method for manufacturing a battery according to the present invention. Regeneration method of eve material shake Fig. 5 shows a half diagram of the present invention, and (8) to (C) are block diagrams. The reproduction table of the dip is not intended to show the semiconductor material of the present invention, and the f-square (8) is a cross-sectional view, which is included in the regenerative device of the device. Figure 8 is a cross-sectional view showing the semiconductor-containing heat-ejection device of the present invention in a reproduction device of the present invention, which is shown in the reproduction device of the present invention. FIG. 1 is a view showing a regenerative device of the semiconductor material of the present invention. FIG. 1 is a view showing a configuration of the semi-conductive device of the present invention, in which the second axis (4) shows the semiconductor material of the present invention. In the regenerative device, 3J9336 43 200849322 :=: The structure of the device is removed. Figure 12 shows the assembly clock 152. [Main component symbol description] 10, 62, 86, 1〇6, 120 11 Oxide film 13 Boron / 21 Protective film 23 light-receiving electrode 12 20 22 chip scale wafer back electrode 30A, 30B, 30C, 132 regeneration device 32, 128 stone recovery device 34, 134 scale removal device 36, 136 degassing device 38 ^ 138 separation device 40, 140 hot donor devices 42, 142 too Battery manufacturing device 44 Plasma removing device 46 Force hot phosphorus removing device 48, 76, 96 Quartz tube 50, 90 Heaters 52, 80, 100 Introducing portions 54, 82, 102, 124 discharging portions 56, 58, 78, 84 , 1 〇 4 gas; t 60~ 88, 108, 122 quartz boat 64 conveyor belt 66 mesh bag 68, 7 2 slot 70 hydrofluoric acid 74 water 92, 94 &gt; 110 temperature li viewer 112 slurry torch 114 nozzle 116 Electron gun 118 Processing chamber 126 Pump 130 Chip collection device 144 Impurity removal device 146, 148 Punch 44 319336 200849322 150 Die 154 Pressurizing portion 156 Pressure gauge 158 Aggregate 159 Pressurizing rod 45 319336

Claims (1)

200849322 X. Applying for a patent garden: • !· A semiconductor material is regenerated in half, and the semiconductor material is removed from the recovered semiconductor material. : a material of the surface of the conductor material moves the ruthenium to the surface of the half of the phosphor, 乂;, f; and will be located in the semiconductor material.分离 半 半 四 四 四 四 2 2 2 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如The second semiconductor material is separated as claimed in the patent application. In the above separation process, the semiconductor material is separated from the above-mentioned semiconductor material by (4) or grinding the semiconductor material of the above-mentioned scale I ^ application patent scope / item, which is provided with the straw material by emulsification treatment of the above semiconductor material An oxidizing step that removes the removal is included; or the non-activated non-activated step is made by a hot donor. π If you apply for a patent range! The method for regenerating a semiconductor material, wherein 'heating the semiconductor material in the above heating process is more than 9 120 120 (TC or less. Ma 6. A method for regenerating a semiconductor material) is included in the recovered semiconductor material Boron is a non-activated semiconductor material regeneration method characterized by comprising: 'heating the semiconductor material, and using the hot donor to make the boron 319336 46 200849322 non-activated non-activation step. The method for regenerating a semiconductor material, in the above non-activation process, heating the semiconductor material w is 300. (: above 500t: below. / Yan and 8. Recycling of semiconductor material as claimed in claim 6 In the method 1, the preparation of the semiconductor material contained in the semi-conductive material is carried out by the step of removing the steaming shirt; or by the heat treatment, moving to the surface of the above:: Step. Knife a step of moving to the above-mentioned semiconductor material by heat treatment: a step of removing the semiconductor material, or a non-activated non-activated operation of the semiconductor material. 10. A method of manufacturing a solar cell, wherein the semiconductor material is a particulate crucible. 11. The method of manufacturing a solar cell according to claim 9, wherein the removal step and the non-activation step are both provided. 12::Feng:: A material regenerating device, which is a semiconductor material regenerating device, which is characterized in that: the guide semiconductor material is guided to move the material to the surface of the semi-finished material. a heating device; and the above-described scale on the surface of the above-mentioned semiconductor material 319336 47 200849322. In the separation device 1 for separating the above-mentioned semiconductor material, in the above-mentioned heating device, in the above-mentioned heating device, a regenerative device for forming a material is formed with an oxide on the surface of the above-mentioned separated semiconductor material. Upper /: The semiconductor material is separated. 14. In the f of the 12th item of the patent application, in the above-mentioned separation device, the regeneration device of the V-material, the ^, the turn &quot; by the famous insect or research, the ship 1 I», +, insect The above semiconductor materials are separated. In the above-mentioned 半导体 崦 崦 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The thermal donor body is a regenerative device for the semiconductor material of the non-perfect application No. 12, i: upper = the temperature at which the thermal device heats the semiconductor material is 1200 C or more. A regenerative device comprising a semiconductor material, characterized in that a boron regenerating device having a semiconductor material is made into a non-activated semiconductor material: heating the semiconductor material and causing the boron to become non-ferrous by a thermal donor Activated non-activated device. 18. The apparatus for regenerating a semiconductor material according to claim 17, wherein in the non-activated device, the temperature of the semiconductor material is heated to 300 ° C or more and 500 Å. (: below. 319336 48 200849322 • 19. If the semiconductor material of the πth item of the patent application is applied, the above-mentioned semiconductor #枓饼^^^ is removed and the contained money is evaporated to remove the material. Heat treatment by ~7 'will move to the above-mentioned semiconductor off-device' from the above-mentioned semiconductor material to separate the separation of the solar cell manufacturing. #罟,#, f solar cells::::二回广:Semiconductor materials A manufacturing apparatus for a solar battery comprising: a heat treatment: moving to a surface of the semiconductor material =, a "removal device for separating the semiconductor material; or including a bulk material The non-activated non-activated device of the butterfly. The solar cell manufacturing device of the second item of claim 2, and the above-mentioned semiconductor material is in the form of particles. , ...: Application: Solar cell of the 20th patent range In the manufacturing apparatus, the 23·-chain=, the above-mentioned removal device and the above-mentioned non-activated device are provided. The I-two-conductor&quot;&quot; material regeneration method is from the recovered semiconductor material. The method for regenerating the body material is characterized in that the semiconductor material is aggregated to form a collection of aggregates and the upper 24::: included in the material in the state of the aggregate The impurity removal step. • Ge 0 A, please patent 筘 图chu, in the above-mentioned collection process item 2, the second method of the conductor material, the main road ', Yi Wangzhong' is wrongly formed by pressure forming a plurality of the above + one The material is formed into the above-mentioned aggregate. 49 319336 200849322 25. In the 23rd item of the patent application, in the above-mentioned method for regenerating the body, the semiconductor material is formed into the above-mentioned aggregate. And the method for regenerating the semiconductor material of the 23rd item of the illuminating range is an aggregate. In the step of collecting, the above-mentioned I is formed inside the void, and the method of performing the == step includes using the liquid to the above In the state of the semiconductor material, the immersion = the upper semiconductor material is in the above-mentioned assembly. 28. As described in the patent application, the above impurity is removed: 4; t: the regeneration method of the conductor material, and the material thereof is such that the above semiconductor: The impurity which is heated by heating the conductive material of the semiconductor material is moved to a surface on which the semiconductor material is immersed in a state in which the semiconductor material is immersed in a liquid, and f &amp; a separating step of removing the above-mentioned impurities on the surface; in the separating step, the gap of the combined body is infiltrated into the above-mentioned half V of the particles formed in the above-mentioned collective assembly; (4) 'removing the above impurities to remove . (4) The surface of the semiconductor of claim 23, wherein the impurity removes the burdock method, such that the disk is moved by heating the semiconductor material; and the surface of the material is located Heating the above-mentioned phosphorus on the surface of the shovel, and separating the semiconductor material from the above 319336 50 200849322. See the method for regenerating a semiconductor material according to claim 23 of the patent application, wherein the step of removing the mass comprises heating the semiconductor material and using the thermal donor to make the boron non-activated. 31. For the semiconductor material of the 23rd patent application scope: the above-mentioned impurity removal process system has the following steps: from the loading: the removal step to separate. The other # μ m 蛤 材 科 将 镇 镇 镇 + + + + The butterfly becomes a non-activated non-activating step. 32. The method for regenerating a semiconductor material according to item 23 of the patent application, wherein the semiconductor material is a particulate crucible. /, 33. - Recycling of a semiconductor material, which is a semi-conducting surface that is reused from the removal of impurities. The material of the semi-conductor is: (7) Recycling of the material (4), which features the above-mentioned semiconductor materials. And a Chinese device for forming an aggregate, and an impurity removing device for removing the impurities contained in the half of the aggregate in the state of the aggregate. And a semiconductor material that is collected by a solar cell of a solar cell as a method for manufacturing a solar cell that is reused, characterized in that the semiconductor material is aggregated to form (4); In the state of the above-mentioned aggregate, the above-mentioned materials are two: an impurity removal step in which impurities are removed. . , 3 5 · A solar cell is made in the solar cell and is again = 2 / recycled semiconductor material as a solar cell manufacturing device, characterized by 319336 51 200849322 ' To have: 1 An apparatus for collecting semiconductor materials to form an aggregate; and an impurity removing device for removing the impurities contained in the material in the state of the aggregate. 52 319336