TW201231392A - Manufacturing method and apparatus of silicon, silicon wafer, and panel for solar cell - Google Patents

Manufacturing method and apparatus of silicon, silicon wafer, and panel for solar cell Download PDF

Info

Publication number
TW201231392A
TW201231392A TW100147271A TW100147271A TW201231392A TW 201231392 A TW201231392 A TW 201231392A TW 100147271 A TW100147271 A TW 100147271A TW 100147271 A TW100147271 A TW 100147271A TW 201231392 A TW201231392 A TW 201231392A
Authority
TW
Taiwan
Prior art keywords
molten salt
manufacturing
condensate
molten
salt
Prior art date
Application number
TW100147271A
Other languages
Chinese (zh)
Inventor
Yoji Arita
Yukihiro Miyamoto
Keiji Yamahara
Original Assignee
Mitsubishi Chem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Publication of TW201231392A publication Critical patent/TW201231392A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

The present invention provides a method for manufacturing silicon, which can remove impurities, such as boron (B), aluminum (Al) and calcium (Ca), from metallic silicon as a raw material efficiently in a short time by a single process and thereby manufacture metallic silicon of high purity. The present invention resides in a method for manufacturing silicon, which comprises: bringing molten silicon containing impurities and a molten salt into contact with each other; vaporizing the molten salt containing the impurities to form a vaporized product and thereby remove the impurities from the molten silicon; and condensing the vaporized product by condensing means to form a condensed product.

Description

201231392 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種作為例如製造太陽電池用面板時之素 材使用的矽之製造方法及製造裝置。 【先前技術】 聚石夕太陽電池中,一般係使用比電阻值為0.5〜1.5Ω · cm 以上且純度99.9999%(6N)以上的高純度金屬矽。該高純度 金屬矽係原料單價便宜,由工業方法而言,最佳係由含有較 多雜質之原料金屬矽將雜質精製•去除而進行製造。 原料金屬矽所含之雜質中,鐵、鋁、鈦及鈣可藉由使熔融 矽(使含有雜質之原料金屬矽熔融的矽)凝固偏析,而去除至 矽液相側。又,鈣等可藉由將熔融矽於 1.3χΗΤ2〜10_4Pa(l(T4〜10_6Torr)左右的真空中進行蒸發處 理,而予以去除。 然而,雜質中,硼及磷非常難以去除,尤其是硼的去除特 別困難。例如,於熔融矽中,藉由在惰性氬中添加氧或二氧 化碳或水蒸氣並吹入,而使其氣體化為硼、氧或氫之化合物 而予以去除的氧化處理(參照專利文獻1、專利文獻2)。 上述方法中,將原料金屬矽中之硼(B)使用水蒸氣等進行 氧化,作成BO氣體而去除時將耗費時間,且在此同時,矽 亦被氧化,而損失較大。尤其是若將水蒸氣吸入至炫融石夕 中,則因副反應而產生大量氫,故於安全上亦造成問題。 100147271 4 201231392 另外’作為使用鹵化鹼的矽之精製方法’提案有由原料金 屬矽之污泥製作熔渣(以原料金屬矽中之二氧化矽為主成分 的熔渣)’將其使用於去除雜質時之成分調整以回收砂的技 術(參照專利文獻3),但此未必能得到滿意之純度的碎。又, - 在熔融的情況,由於其為氧化物,故所使用之容器限制於二 • 氧化矽或氧化鋁等之氧化物系耐火材,而有裝置昂責的問 題。 另外’感應加熱時,必須將石墨棒等在容器中進行加熱直 到矽熔融為止,而使製程變得複雜。再者,熔渣法中,必須 進行由熔融熔渣將矽分離的製程,此方面亦有製程變得複雜 的問題。 另外,專利文獻4中記載有下述步驟:將20g之原料金屬 矽粉末粉碎,將其與相同粒徑之NaF依1 : 1質量比進行混 合的步驟;以1300°C加熱而使固體石夕與經熔融之NaF接觸 的步驟;將第二試料依1450t:加熱10分鐘而使NaF及原料 金屬矽熔融的步驟;將此等試料(NaF及矽)冷卻至室溫的步 驟,藉由水性溶出及接下來的傾析(decantation)及過遽 (filtering),由各試料中之NaF分離出矽的步驟。 η 然而,專利文獻4記載之方法中,係藉由從含有NaF與 原料金屬矽之固形物,使用過濾等分離出矽,故僅止於精製 矽,其精製效果不足’且有不易進行分離矽之作業的問題。 又’現貫問題方面,在石夕(Si)融點附近,NaF之蒸氣壓較高, 100147271 5 201231392 若將Si與NaF之混合物進行加熱,則有在進行加熱而使溫 度上升的期間,NaF發生蒸發的問題。 專利文獻1:日本專利特開平11-49510號公報 專利文獻2:曰本專利特開平4-228414號公報 專利文獻3 :美國專利第4388286號說明書 專利文獻4 :曰本專利特開昭62-502319號公報 【發明内容】 (發明所欲解決之問題) 本發明之課題在於提供一種矽之製造方法’可解決上述說 明之習知技術之問題點,可由原料金屬矽,將硼(B)、鋁(AI) 及鈣(Ca)等雜質,依短時間且同一製程有效率地去除,並作 為高純度的金屬石夕。 (解決問題之手段) 本發明係為了解決上述課題而進行了各種檢討,結果發 現’使含有雜質之原料金屬矽熔融的矽(以下有時稱為熔融 矽)、與熔融鹽於容器内接觸,而使該矽中之硼(B)、鋁(A1) 及l^(Ca)等雜質與熔融鹽反應,藉此可使含有該雜質之揮發 性化合物溶解於熔融鹽中,並蒸發為氣相,因此可將該雜質 去除至系統外。本發明即根據此等見解而形成者。 亦即,本發明係如下述。 1.一種矽之製造方法’其特徵為,使含有雜質之熔融矽與熔 融鹽接觸,並使含有該雜質之熔融鹽蒸發而作為蒸發物,藉 100147271 6 201231392 此由該熔融矽去除該雜質; 藉冷凝手段使該蒸發物冷凝為冷; 疑物。 2.如前項1記載之矽之製造方法,| 為 s 其中,將上述冷; 熔融鹽使用。 义物作 3_如前項1或2記载之矽之製造方法, ’八中’使上述 由冷凝手段落下,使冷凝物中之熔融 7凝物 喊氣與以融;5夕接觸。 4. 如上述1至3項中任一項記载之石夕 、矽之製造方法,其中,將 附著於上述冷凝手段之冷凝物由冷凝手^去& 5. 如上述i至4項中任一項記载之矽之製造^法,其中,藉 由交換上述冷凝手段,將附著於冷凝手段之冷凝物由冷凝手 段去除。 6. 如上述1至5項中任一項記载之石夕之製造方法,其中,上 述冷凝手段係藉由將上述蒸發物冷卻而使其冷凝為冷凝 物,且設於系統内上部之冷卻手段。 7. 如上述1至6項中任一項記载之矽之製造方法,其中,將 上述冷凝物之溫度設為上述熔融鹽融點以下使其固化而作 為凝固物。 8. 如上述1至7項中任一項記載之矽之製造方法,其中,將 上述雜質由熔融矽去除後,使上述熔融鹽蒸發去除至系統 外0 9_如上述1至8項中任一項記载之矽之製造方法,其中,於 上述熔融矽中吹入惰性氣體。 100147271 7 201231392 10. 如上述1至9項中任一項記載之矽之製造方法,其中, 上述雜質中包括硼。 11. 如上述1至10項中任一項記載之矽之製造方法其中, 上述熔W鹽係包括從由含有驗金屬與_素之複合鹽、及含有 鹼土族金屬與鹵素之複合鹽所組成群選出之至少一種化合 物。 12.如上述1至η項中任一項記載之矽之製造方法,其中, 上述熔融鹽係包括從由氟化鋰(LiF)、氟化鈉(NaF)、氟化鉀 (KF)、敦化則RbF)、氟化铯(CsF)、石夕氟化納(Na2siF6)、冰 晶石(Na3A1F6)、氟化鈉與氟化鋇之混合物、及氟化鈉與氟 化鋇與氣化鋇的混合物、以及此等之混合物所組成群的至少 一種化合物。 13.如上述1至12項中任— 員5己載之石夕之製造方法,其中 上述熔融鹽之量,係相對於垃 ^ 落琺矽’為5質量%以上且30丨 質量%以下。 14.一種奴製造裝置,係使含有雜質之嫁㈣與熔融鹽 觸,使含有該雜質找融鹽蒸發為蒸發物,藉此由該炫融 去除該雜質者,其具備: 容器’其具有底部、側部與上部開口部,填充上述含有 質之熔融矽與上述熔融鹽; 加熱手段,對上述含有雜暂 令雜λ之熔融矽與上述熔融鹽進行 熱; 100147271 8 201231392 冷凝手段,設於上述容器之上述上部開口部更上方,使上 述蒸發物冷凝為冷凝物;及 排出手段,係藉由與上述熔融鹽之反應,將由上述熔融矽 所去除之上述雜質排出。 15. 如前項14記載之矽之製造裝置,其中,進一步具備用以 對上述容器中添加熔融鹽之手段。 16. 如前項14或15記載之矽之製造裝置,其中,進一步具 備將上述冷凝物作為熔融鹽再利用之手段。 17. 如前項14至16中任一項記載之矽之製造裝置,其中, 進一步具備將附著於上述冷凝手段之上述冷凝物由冷凝手 段去除的手段。 18. 如前項14至17中任一項記載之矽之製造裝置,其中, 上述冷凝手段係具有朝系統内之上下方向延伸存在的側 壁、且上部及下部形成為開口部之中空筒狀體。 19. 如前項18記載之矽之製造裝置,其中,於上述筒狀體之 内部設有分隔構材。 20. 如前項14至17中任一項記載之矽之製造裝置,其中, 上述冷凝手段係具有朝系統内之上下方向延伸存在的側 壁、下部形成為開口部且上部封閉的筒狀體。 21. 如前項14至17中任一項記載之矽之製造裝置,其中, 上述冷凝手段係朝與系統之上下方向呈交叉之方向延伸存 在的板狀體。 100147271 9 201231392 一項記載之矽之製造裝置 ’其中, 而作為冷 22.如前項14至21中杯 上述冷凝手㈣上—發物冷卻使其冷凝 凝物之冷卻手段。 23. 如前項14至22中也 _ 、 你一項5己載之矽之製造裝置,其中, 上述容器係由石墨或唆化矽所構成。 ’、 24. 如前項Μ至23中你一項記載之石夕之製造裝置,复中 進-步具備用以吸引切蒸發物之吸引手段。 25. 如前項14至24中紐一項記載之矽之製造裝置,其中, 進-步具備用於回收上述蒸發物之回收手段。 26. 如前項25記載之矽之製造裝置,其中’上述回收手段係 旋風器、袋遽态或濕式捕集手段之任一種。 、 27. —種矽晶圓,其含有藉由前項j至13項中任一項記載之 矽之製造方法所獲得之矽。 28. —種太陽電池用面板’其含有藉由前項1至13項中任— 項記載之矽之製造方法所獲得之矽。 (發明效果) 根據本發明,藉由使含有硼(B)、鋁(A1)及鈣(Ca)等雜質之 熔融矽與熔融鹽於系統内接觸,則可構成該矽液相與熔融鹽 之液相的界面,經由該界面使矽中之雜質與熔融鹽反應,而 可有效率地去除該雜質。亦即,根據本發明,可提供一種矽 之製造方法,其可依短時間且同一製程將熔融矽所含之雜質 有效率地去除,龙作成高純度之金屬矽。 100147271 10 201231392 为一 ㈣處’ θ 界面使石夕中之雜質與祕鹽反應,而 所產生的反應物,其—部分成為 2發去除…部分溶解於㈣鹽。於此,由於㈣鹽有並 衫與與雜質間之反應而是進行蒸發的情形,故較佳係將所 療發之熔融鹽时,縣力。錄_巾以參與反應。 尤其是本發明中,係於反應系統内將含有溶融鹽之基發物 藉冷凝手段進行冷凝為冷凝物,㈣冷凝物作為㈣鹽使 用,藉此於反應系統内使溶融鹽循環,因此,不浪費溶融趟 而使其參與反應。又,本發明巾,補切附著於該冷凝手 段之冷凝物纟转+段絲,❿可㈣接觸之冷凝 ,中所含之雜質量。亦即,根據本發明,可提供—種使精製 高純度金屬矽時之效率更進一步提升的矽之製造方法。 【實施方式】 以下詳細說明本發明之實施形態,㈣下記载之構成要件 之說明僅為本發明實施態樣之一例(代表例),本發明係在不 超過其要旨的前提下,並不限定於以下内容。 本說明書中,所謂「系統内」,係指使熔融矽與熔融鹽之 反應、與溶融鹽之反應所進行之雜質的蒸發、熔融鹽之蒸 發、含有熔融鹽之蒸發物的冷凝、以及冷凝物之落下發生的 場所。例如’在於具備排出口之框體内收容加熱手段或容器 等,於框體内部進行矽之精製,經由排出口將雜質予以蒸發 去除的情況,可將框體内視為系統内。另一方面,所謂「系 100147271 11 201231392 統外」,係指進抖 一 鹽之蒸發物的叫 被去除之雜㈣时、含有炫融 統外。 •精製的場所。例如,可將框體外視為系 1.矽之製造方法 ::::製:方法的特徵在™有雜質之㈣ 此由該有雜質之㈣鹽蒸發為蒸發物,藉 物。以下,將*1雜質’將該蒸發物#冷凝手段冷凝為冷凝 亦即,本發明^明之製造方法分為各步驟進行說明。 融石夕麟融鹽㈣t之製造方法’係包括:使含有雜質之炫 作為蒸發物,#此=内接觸,使含有該雜質之熔融鹽蒸發而 且包括:藉由融石夕去除該雜質的步驟(步驟叫而 驟S2)。本發明中\ &使麵發物冷凝為冷凝物的步驟(步 驟S2。 ’較佳係於系統内同時進行步驟S1與步 1.1.步驟si 雜™,使含抖 之雜質聽融鹽反應而產生之反應物,係 南’其―部分被蒸發絲至⑽外,-部分溶解於炫 =。溶解⑽融鹽之雜質可在使鹽被蒸發去除、 外時,一起被去除。藉此,可僅回收由系統内所精製㈣。 100147271 12 201231392 熔融鹽係使成為原料之金屬矽熔融而成者。原料金屬矽 中,至少含有硼(B)作為雜質,進而,亦可含有例如磷(p)、 鐵(Fe)、鋁(A1)、鈣(Ca)或鈦(Ti)等。本發明中,此等雜質中, 尤其適合去除硼(B)、鋁(A1)及鈣(Ca)。 • 原料金屬矽中之雜質的合計濃度,係以質量基準計,較佳 • 為1〇〜50ppm、更佳10〜3〇PPm。屬於此種濃度範圍之原料 金屬矽可藉由電弧碳還元等輕易獲得,可抑低成本,故較佳。 熔融鹽若為在原料金屬矽之熔融溫度進行融解,與含有雜 質之熔融矽接觸,構成例如矽液相與熔融鹽液相間之界面, 藉此,與熔融矽中之硼(B)、鋁(A1)或鈣(Ca)等之雜質進行反 應,可使雜質蒸發為氣相的化合物,或使雜質溶解於熔融鹽 本身而可與雜質—起蒸發的化合物即可,並無特別限制。炼 融鹽可依固體狀態添加於系統内,於系統内使其熔融。 可為例如含有從由含有鹼金屬與鹵素的複合鹽、以及含有 鹼土族金屬與_素的複點鹽所組成群選擇之至少一種化合 物者。 • 特佳係含有從由氟化鋰(LiF)、氟化鈉(NaF)、氟化鉀(KF)、 , 氟化铷(RbF)、氟化鉋(CsF)、矽氟化鈉(NajiFj、冰晶石 (NaAlF6)、氟化鈉與氟化鋇之混合物、及氟化鈉與氟化鋇 與氯化鋇的混合物、或此等之混合物所組成群的至少一種化 合物。 此等之中,由抑制於矽中大量攝取熔融鹽成分的情形,且 100147271 13 201231392 即使在攝取有炫融鹽成分的情況下仍τ輕易進行精製的觀 點而言,較佳為鹼金屬之氟化物,特佳為NaF。 尚且’溶解有原料金屬矽的情況,雖有生成氧化被膜的情 形,但本發明中,可使氧化物溶解於上述熔融鹽中。又,^ 為上述溶融鹽,則可使用通常之石墨作為容器,由經濟性= 點而言亦屬較佳。 尚且,在使熔融鹽之液相形成於熔融矽之液相上時,可使 用密度小於矽(Si)之熔融鹽。作為該熔融鹽,可舉例如原子 編號小於Cs的鹼金屬氟化物鹽。 熔融鹽中之雜質含量越低越佳,但即使熔融鹽中含有雜 質’該雜質大多為被氟化’於處理溫度下其大部分被蒸發, 並不造成問題,此’可㈣—般玉㈣藥品作為炫融鹽。 於此,處理溫度係指原料金屬矽之熔融溫度。 熔融鹽之使用量係相對於原料金屬矽(熔融矽),較佳為5 質量%以上、更佳質#%以上、再更佳2()質量%以:、 特佳30質量%以上。又’較佳為3〇〇質量%以下更佳 質量%以下、再更佳70質量%以下、特佳5()質量%以下。 藉由將熔融鹽之使用量設為5質量%以上,則可得到充分的 精製效果。 Λ 另外,本發明之料製造方法中,由於包括藉後述步驟 S 2 ’使上述蒸發物於系統内藉冷凝手段冷凝而作為冷凝物, 而將該冷凝物作為溶融鹽使用的步驟,故可減少炼融鹽之使 100147271 14 201231392 用量。 作為形成炼融石夕與溶融鹽之液相界面的 原料金屬伽⑽後’同時進行加熱融解的形= 可為僅將原料金屬鹤行加熱融解作紐_後 添加熔融鹽的形態。 〜、中 在將原料金屬石夕愈炫融趟、.θ人 _ 吧合後進行加熱炼解的情況,雖 然在石夕炫融前炼融鹽即蒸發成為蒸發物,但本發明中 ㈣蒸發物藉冷凝手段冷凝而作為冷凝/ #用w度洛下至熔融矽中’則可將該冷凝物作為熔融骑 =以抑制炫融鹽的損失。又,融鹽亦可視需要使用進: /扣σ於加熱溶融後進行冷卻而經;^劑化者。 m金屬珍與溶融鹽加熱炫解的温度,較佳為石夕之融點 2000Ϊ /上更佳145〇°C以上。又’該温度之上限較佳為 2000C以下、更佳17〇(rc以下。 :此,藉由使溶融石夕與溶融鹽接觸,可構成石夕液相無融 …夜相的界面。經由石夕液相與炫融鹽液相的界面,可使溶融 ^中之雜質雜融鹽進行反應,而可使該雜質蒸發至氣相或 私行至炫融鹽中。 另外’經由石夕液相與炫融鹽液相之界面,使溶融鹽所莱發 ^乳體或複合化合物的—部分分解所形成的分解生成物的 孔體等作用至石夕,藉此可使溶融石夕中之雜質與溶融鹽反應。 反應處理時間、亦即炫融石夕與炼融鹽之接觸時間,通常較 100147271 201231392 佳為(u小時以上、更佳Q 25小時以上、特佳μ小時以上。 又,通常較佳為12小時以下、更佳6小時以下、特佳2小 時以下。反應處理時間越長,則對雜質之降低越有效,但由 製程成本的觀點而言,最好較短。 士上述般錢抑贿融鹽之界面中所生成之含有雜質 的化口物,亦即,使石夕中之雜質與炼融鹽反應的反應物,係 蒸發或-部分溶人雜融鹽中,而可錄融鹽—起被蒸發去 除。 传之壓力(減壓度)若為大氣麗即可,視情況較佳 Pa左右。又,蒸發去除時1將氬等之惰性 二吸入雜融㈣作為韻氣體,敎域發去除,故較 /j— 使其流動,可更進-步促進雜質與 的反應。為了增加熔㈣相對於㈣ 亦可藉由例如電磁感賴拌進行加熱。 動速度 由 因熔/虫石夕相對於熔融鹽之流動逮度變大而促進反應的理 ’遇為係因可使在料相與制鹽之界面附近所以 揮反應場所功能的邊界層,相對地減薄所致。邊界發 融梅融鹽接觸時,成為各個分子移動的限力::二切 由使邊界m較㈣%與㈣鹽變得容 匈错 另外’藉由下述«十)之方法,亦可更進 。 熔融鹽的反應。 足進雜質與 100147271 201231392 ⑴將惰性氣體吹人切液相中的方法。 (II) 使用冋頻感應爐對石夕液相進行感應攪拌的方法 (III) 將上ϋ之炫㈤鹽機械性地押人至下層之石夕層中的方 法。所明機械性押人,係指使用機械性手段、例如由石墨製 •成之凹型工模,將上述溶融鹽押入至下層石夕層中。衣 - (iv)使用轉子攪拌液相的方法。 W將溶融鹽之粉體與惰性氣體一起吹入至石夕液相中的方 法。 雜質與_鹽-起蒸發去除後,視需要,可藉由對容器 内進行真空排氣以去除殘存的熔融鹽’並藉由將矽固化,而 可付到冋核㈣。又’在將㈣化時,可藉由進行所謂單 向凝固,將殘存雜質藉偏析予以去除,而可得到更高純度的 石夕。 藉由上述方法,去除雜質後,進而進行驗金屬之去除,則 可作成更高純度的石夕。驗金屬之去除可藉由已知之一般方法 進行。例如,可藉真线理鱗向㈣等之㈣予以輕易去 除。 以下更詳細說明步驟S1之具體例與其作用等。 (a)於使用氟化鈉(NaF)作為熔融鹽的情況 氟化納卿)於!50〇t下之比重為約! 8,較石夕之比重(約 2.6)輕。因此,於系統内,構成下層之石夕液相與上層之_ 液相的界面。 100147271 17 201231392 於此種情況,認為係經由界面,發生下述反應:熔融矽中 之雜負之硼(B)作為反應物而蒸發至氣相,其一部分溶解移 動至熔融鹽中。 4NaF + B = 3Na + NaBF4,或 3NaF + B = 3Na + BF3 另外,關於熔融矽中之雜質之鋁(A1),亦發為係發生下述 反應。與硼不同,其生成物之蒸氣壓較低,故此情況下係溶 解於熔融鹽中,在將溶融鹽蒸發去除時一起被去除。 A1 + 6NaF = Na3AlF6 + 3Na 為了使反應快速進行,重要的是快速去除反應物。該反應 物之去除,較佳係於系統内之熔融矽中吹入氬氣等之載體氣 體,與載體氣體一起將該反應物去除至系統外。 另方面NaF中之一部分Na雖被攝入至溶融石夕中,對 此,可藉由上述之鹼去除處理予以去除。[Technical Field] The present invention relates to a manufacturing method and a manufacturing apparatus for a crucible used as a material for manufacturing a panel for a solar cell, for example. [Prior Art] In the Ju Shi Xi solar cell, a high-purity metal crucible having a specific resistance value of 0.5 to 1.5 Ω·cm or more and a purity of 99.9999% (6N) or more is generally used. The high-purity metal lanthanum raw material is inexpensive, and industrially, it is preferable to manufacture and purify impurities by removing and removing impurities from a raw material metal ruthenium containing a large amount of impurities. Among the impurities contained in the raw material ruthenium, iron, aluminum, titanium, and calcium can be removed to the liquid phase side by solidification by melting the ruthenium (a ruthenium in which the raw material metal ruthenium containing impurities is melted). Further, calcium or the like can be removed by evaporating the molten crucible in a vacuum of about 1.3 χΗΤ 2 to 10 _ 4 Pa (1 (T4 to 10 -6 Torr). However, among the impurities, boron and phosphorus are very difficult to remove, especially boron. It is particularly difficult to remove. For example, in a molten crucible, an oxidation treatment is carried out by adding oxygen or carbon dioxide or water vapor to an inert argon and blowing it into a compound of boron, oxygen or hydrogen (refer to the patent). Document 1 and Patent Document 2) In the above method, it is time consuming to oxidize boron (B) in the raw material metal ruthenium using steam or the like to form BO gas, and at the same time, ruthenium is also oxidized. The loss is large. In particular, if water vapor is sucked into the glazed stone, a large amount of hydrogen is generated due to a side reaction, which causes problems in safety. 100147271 4 201231392 In addition, 'as a method of refining ruthenium using a halogenated base' The proposal is to make slag from the sludge of the raw material metal bismuth (the slag containing cerium oxide as the main component in the raw material cerium), and to adjust the composition for removing impurities to recover the sand. (Refer to Patent Document 3), but this does not necessarily result in a crush of satisfactory purity. Moreover, - in the case of melting, since it is an oxide, the container used is limited to oxides such as cerium oxide or aluminum oxide. It is a refractory material, and there is a problem with the installation. In addition, in the case of induction heating, it is necessary to heat the graphite rod or the like in the container until the crucible is melted, which complicates the process. Further, in the slag method, it is necessary to carry out In the process of separating the ruthenium from the molten slag, there is a problem that the process is complicated. Further, Patent Document 4 describes a step of pulverizing 20 g of the raw material metal ruthenium powder and NaF of the same particle diameter. a step of mixing at a mass ratio of 1:1; a step of contacting the solid stone with molten NaF at 1300 ° C; and a step of melting the second sample according to 1450 t: heating for 10 minutes to melt the NaF and the raw material metal ruthenium The step of cooling the sample (NaF and hydrazine) to room temperature, and separating the ruthenium from NaF in each sample by aqueous dissolution and subsequent decantation and filtering. however In the method described in Patent Document 4, since the ruthenium is separated from the solid matter containing NaF and the raw material metal ruthenium by filtration or the like, the ruthenium is not only purified, but the purification effect is insufficient, and the separation operation is difficult. In the case of the 'constant problem', the vapor pressure of NaF is high near the melting point of Shi Xi (Si), 100147271 5 201231392 If the mixture of Si and NaF is heated, there is a period during which the temperature is raised by heating. The problem of the evaporation of the NaF is disclosed in Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. JP-A-62-502319 SUMMARY OF INVENTION Technical Problem An object of the present invention is to provide a method for manufacturing a crucible, which solves the problems of the above-described conventional techniques, and can be made of a raw material metal crucible. Impurities such as boron (B), aluminum (AI) and calcium (Ca) are efficiently removed in a short time and in the same process, and are used as high-purity metal stones. (Means for Solving the Problems) The present invention has been subjected to various reviews in order to solve the above problems. As a result, it has been found that "the ruthenium (hereinafter referred to as "melt enthalpy") which melts the metal ruthenium containing the impurity, and the molten salt are brought into contact with the inside of the container. The impurities such as boron (B), aluminum (A1) and l(Ca) in the crucible are reacted with the molten salt, whereby the volatile compound containing the impurity is dissolved in the molten salt and evaporated into the vapor phase. Therefore, the impurities can be removed outside the system. The present invention has been formed based on these findings. That is, the present invention is as follows. A method for producing a crucible, characterized in that a molten crucible containing an impurity is brought into contact with a molten salt, and a molten salt containing the impurity is evaporated to be an evaporate, and the impurity is removed from the molten crucible by 100147271 6 201231392; The evaporant is condensed into cold by means of condensation; 2. The method for producing ruthenium according to the above item 1, wherein s is the above-mentioned cold; molten salt is used. The product is manufactured according to the above item 1 or 2, and the above-mentioned "eighth" is caused to fall by the condensation means, so that the molten condensate in the condensate is screamed and melted; 4. The method for producing a shovel according to any one of the above items 1 to 3, wherein the condensate attached to the condensing means is condensed by a condensing hand & 5. as in the above items i to 4. The manufacturing method according to any one of the preceding claims, wherein the condensate adhering to the condensing means is removed by the condensing means by exchanging the condensing means. 6. The method for producing a shovel according to any one of the items 1 to 5, wherein the condensing means cools the evaporant to be condensed and is cooled in an upper portion of the system. means. 7. The method for producing a crucible according to any one of the preceding claims, wherein the temperature of the condensate is set to be a solidified product by setting it to a melting point or lower of the molten salt. 8. The method for producing a crucible according to any one of the items 1 to 7 above, wherein, after the impurities are removed from the molten crucible, the molten salt is evaporated and removed to the outside of the system. A method of producing the method, wherein an inert gas is blown into the molten crucible. The method for producing a crucible according to any one of the items 1 to 9, wherein the impurities include boron. The method for producing a crucible according to any one of the items 1 to 10, wherein the molten W salt comprises a composite salt containing a metal and a metal salt, and a composite salt containing an alkaline earth metal and a halogen. At least one compound selected from the group. The method for producing a crucible according to any one of the items 1 to 5, wherein the molten salt comprises lithium fluoride (LiF), sodium fluoride (NaF), potassium fluoride (KF), and Dunhua. a mixture of RbF), cesium fluoride (CsF), fluorinated sodium fluoride (Na2siF6), cryolite (Na3A1F6), sodium fluoride and cesium fluoride, and a mixture of sodium fluoride and cesium fluoride and bismuth gasification And at least one compound of the group consisting of such mixtures. 13. The method for producing a shovel of the above-mentioned item 1 to 12, wherein the amount of the molten salt is 5% by mass or more and 30% by mass or less based on the amount of the lanthanum. A slave manufacturing apparatus for contacting a marsha (4) containing impurities with a molten salt to evaporate the impurity-containing salt into an evaporate, thereby removing the impurity by the smelting, which has: a container having a bottom a side portion and an upper opening portion filled with the molten strontium and the molten salt; and a heating means for heating the molten enthalpy containing the temporary temporary λ and the molten salt; 100147271 8 201231392 condensing means, The upper opening of the container is further above, and the evaporating substance is condensed into condensate; and the discharging means discharges the impurities removed by the molten enthalpy by reaction with the molten salt. 15. The manufacturing apparatus according to the above item 14, further comprising means for adding a molten salt to the container. 16. The manufacturing apparatus according to the above item 14 or 15, wherein the condensate is further reused as a molten salt. The manufacturing apparatus according to any one of the items 14 to 16, further comprising means for removing the condensate adhering to the condensation means from the condensation section. The manufacturing apparatus according to any one of the preceding claims, wherein the condensing means has a side wall extending in a downward direction of the system, and a hollow cylindrical body having an upper portion and a lower portion formed as an opening portion. 19. The manufacturing apparatus according to the above item 18, wherein the partition member is provided inside the cylindrical body. The manufacturing apparatus according to any one of the preceding claims, wherein the condensing means has a side wall extending in a downward direction in the system, and a cylindrical body having a lower portion formed as an opening and closed at an upper portion. The manufacturing apparatus according to any one of the preceding claims, wherein the condensing means is a plate-like body extending in a direction intersecting the upper and lower sides of the system. 100147271 9 201231392 A documented manufacturing apparatus 'where, as a cooling element, as in the previous paragraphs 14 to 21 of the cup, the above condensation hand (four) is used to cool the condensate. 23. The apparatus according to any one of the preceding paragraphs 14 to 22, wherein the container is made of graphite or bismuth telluride. ‘, 24. As in the manufacturing equipment of Shi Xi, which you recorded in the preceding paragraph , to 23, the step-by-step method has the attraction means for attracting the cut evaporation. 25. The manufacturing apparatus according to any one of the items 14 to 24, wherein the step further comprises means for recovering the evaporant. 26. The manufacturing apparatus according to the above item 25, wherein the recovery means is any one of a cyclone, a bag state, or a wet trapping means. 27. A wafer wafer comprising the crucible obtained by the method of manufacturing according to any one of clauses 1 to 13 above. A panel for a solar cell, which comprises the crucible obtained by the manufacturing method described in any one of the items 1 to 13. (Effect of the Invention) According to the present invention, the molten cerium containing impurities such as boron (B), aluminum (A1), and calcium (Ca) can be brought into contact with the molten salt in the system to form the liquid phase and the molten salt. The interface of the liquid phase, through which the impurities in the crucible react with the molten salt, can efficiently remove the impurities. That is, according to the present invention, it is possible to provide a process for producing a crucible which can efficiently remove impurities contained in the molten crucible in a short time and in the same process, and to form a high-purity metal crucible. 100147271 10 201231392 For a (four) at the θ interface, the impurities in Shi Xizhong are reacted with the secret salt, and the resulting reactants, which are partially removed, are partially dissolved in (4) salts. Here, since the (iv) salt has a tendency to evaporate while reacting with the shirt and the impurities, it is preferable to use the salt of the molten salt to be treated. Record the towel to participate in the reaction. In particular, in the present invention, the base material containing the molten salt is condensed into a condensate by means of condensation in the reaction system, and (4) the condensate is used as the (iv) salt, thereby circulating the molten salt in the reaction system, and therefore, Waste the enthalpy and participate in the reaction. Further, the towel of the present invention fills and cuts the condensate entangled + segment yarn attached to the condensing means, and the entanglement of the contact condensed in the condensing means. That is, according to the present invention, it is possible to provide a method for producing a crucible which further improves the efficiency of purifying a high-purity metal crucible. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail, and the description of the components described in (4) is only an example (representative example) of the embodiment of the present invention, and the present invention is not limited to the premise of not exceeding the gist thereof. In the following content. In the present specification, the term "in-system" means evaporation of impurities, reaction of a molten salt, evaporation of a molten salt, condensation of an evaporate containing a molten salt, and condensate by reaction of molten enthalpy with a molten salt, reaction with a molten salt. The place where the fall occurred. For example, in a casing having a discharge port, a heating means or a container is housed, and the inside of the casing is purified, and the impurities are evaporated and removed through the discharge port, so that the inside of the casing can be regarded as a system. On the other hand, the term "system 100147271 11 201231392" refers to the case where the evaporating substance of the salt is removed (4) and contains the scent. • Refined place. For example, the outside of the frame can be regarded as a manufacturing method of the system. :::: The method is characterized in that the TM has impurities (4). The salt of the impurity (IV) is evaporated into an evaporate, a borrowing. Hereinafter, the evaporating material #condensing means is condensed into condensation by *1 impurity. That is, the manufacturing method of the present invention is divided into steps to explain. The method for manufacturing the melting stone Xilin salt (four) t includes: making the impurity containing impurities as the evaporating material, # this = internal contact, evaporating the molten salt containing the impurity and including: removing the impurity by melting the stone (Steps are called S2). In the present invention, the step of condensing the facial hair into condensate (step S2. 'It is preferred to carry out step S1 and step 1.1. step si miscellaneous TM in the system, so that the impurity containing the shaking is reacted with the molten salt. The resulting reactants are partially removed from the filaments to the outside of (10), and partially dissolved in the dazzle. The dissolved (10) impurities of the molten salt can be removed together when the salt is removed by evaporation. In the case of the molten salt, the metal ruthenium which is a raw material is melted. The raw material ruthenium contains at least boron (B) as an impurity, and may further contain, for example, phosphorus (p). Iron (Fe), aluminum (A1), calcium (Ca) or titanium (Ti), etc. In the present invention, among these impurities, boron (B), aluminum (A1) and calcium (Ca) are particularly suitable for removal. The total concentration of impurities in the raw material metal ruthenium is preferably from 1 〇 to 50 ppm, more preferably from 10 to 3 〇 PPm. The raw material metal enamel belonging to such a concentration range can be easily replaced by arc carbon or the like. It is preferable to obtain a low temperature, so that the molten salt is melted at the melting temperature of the raw material metal ruthenium. And contacting the molten crucible containing impurities to form an interface between the liquid phase of the crucible and the molten salt, thereby reacting with impurities such as boron (B), aluminum (A1) or calcium (Ca) in the molten crucible. a compound which can evaporate impurities into a gas phase, or a compound which dissolves impurities in the molten salt itself and which can be evaporated from impurities, and is not particularly limited. The smelting salt can be added to the system in a solid state in the system. It may be melted in the inside, and may be, for example, at least one compound selected from the group consisting of a complex salt containing an alkali metal and a halogen, and a complex salt containing an alkaline earth metal and a cerium. Lithium (LiF), sodium fluoride (NaF), potassium fluoride (KF), cesium fluoride (RbF), fluorinated planer (CsF), sodium strontium fluoride (NajiFj, cryolite (NaAlF6), fluorinated a mixture of sodium and cesium fluoride, and a mixture of sodium fluoride and a mixture of cesium fluoride and cesium chloride, or a mixture of such a mixture. Among these, a large amount of molten salt is inhibited from being inhibited by strontium. In the case of ingredients, and 100147271 13 201231392 In the case of the component, it is preferred that the τ is easily purified, and it is preferably a fluoride of an alkali metal, and particularly preferably NaF. In the case where the raw material metal ruthenium is dissolved, an oxide film is formed, but in the present invention, The oxide can be dissolved in the above molten salt. Further, if the above molten salt is used, ordinary graphite can be used as the container, which is also preferable from the viewpoint of economy = point. When it is formed in the liquid phase of the molten crucible, a molten salt having a density smaller than cerium (Si) can be used. As the molten salt, for example, an alkali metal fluoride salt having an atomic number of less than Cs can be used. The lower the impurity content in the molten salt, the lower the impurity content in the molten salt. Good, but even if the molten salt contains impurities 'the impurities are mostly fluorinated', most of them are evaporated at the treatment temperature, which does not cause any problem. This can be used as a dazzling salt. Here, the treatment temperature means the melting temperature of the raw material metal ruthenium. The amount of the molten salt used is preferably 5% by mass or more, more preferably #% or more, still more preferably 2% by mass, more preferably 30% by mass or more, based on the raw material cerium (melting enthalpy). Further, it is preferably 3% by mass or less, more preferably 5% by mass or less, still more preferably 70% by mass or less, and particularly preferably 5 (% by mass or less). When the amount of the molten salt used is 5% by mass or more, a sufficient purification effect can be obtained. Further, in the method for producing a material according to the present invention, the step of condensing the evaporant in the system by condensation means as a condensate by the step S2' described later, and using the condensate as a molten salt, can be reduced. The smelting salt makes 100147271 14 201231392 dosage. The shape of the raw material metal gamma (10) which is formed at the liquid phase interface between the smelting stone and the molten salt is simultaneously heated and melted = the form in which only the molten metal salt is heated and melted as a raw material. ~, in the case of the raw material metal stone 愈 炫 炫 趟 趟 . θ θ θ θ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The condensate is condensed by the condensing means as a condensing / #w degree down to the melting enthalpy', and the condensate can be used as a melt rider to suppress the loss of the scented salt. In addition, the molten salt can also be used as needed: / buckle σ is heated and melted and then cooled; The temperature at which the metal metal and the molten salt are heated and dazzled is preferably a melting point of Shi Xi, 2000 Ϊ / above 145 ° ° C. Further, the upper limit of the temperature is preferably 2000 C or less, more preferably 17 F (vrc or less): Here, by contacting the molten stone with the molten salt, the interface of the shixi liquid phase without melting...the night phase can be formed. The interface between the liquid phase and the liquid phase of the molten liquid can react the impurity amalgam in the molten metal, and the impurity can be evaporated to the gas phase or the private line to the molten salt. The interface with the liquid phase of the smelting and melting salt causes the pores of the decomposition product formed by the partial decomposition of the molten salt or the composite compound to the stone eve, thereby making the impurity in the molten stone Reacts with the molten salt. The reaction time, that is, the contact time between the smelting and the smelting salt, is usually better than 100147271 201231392 (more than u hours, better than 25 hours, more than μ hours). It is preferably 12 hours or shorter, more preferably 6 hours or shorter, and particularly preferably 2 hours or shorter. The longer the reaction treatment time, the more effective the reduction of impurities is, but from the viewpoint of process cost, it is preferably shorter. The impurities contained in the interface between money and bribes The chemical substance, that is, the reactant which reacts the impurities in the stone stalk with the smelting salt, is evaporated or partially dissolved in the human hetero-salt salt, and the salt can be recorded and evaporated to be removed by evaporation. Decompression degree) If it is atmospheric, it is better to use Pa as the case may be. In addition, when evaporating and removing, 1 inert argon and the like are inhaled and mixed (4) as a rhyme gas, and the 敎 domain is removed, so it is compared with /j- Flow, which can further promote the reaction of impurities. In order to increase the melting (4) relative to (4), it can also be heated by, for example, electromagnetic induction. The moving speed is changed by the flow of molten/wormite relative to the molten salt. The large-scale reaction-promoting reaction is caused by the fact that the boundary layer of the function of the reaction site is relatively thin near the interface between the material phase and the salt-making phase. Limiting force of movement:: The two cuts make the boundary m more than (four)% and (4) the salt becomes Ronghan wrong. In addition, the method of the following «10) can also be further advanced. The reaction of molten salt. Into the impurity and 100147271 201231392 (1) A method of blowing an inert gas into a liquid phase. (II) Using a 冋 frequency sense The method of inductively stirring the Shixi liquid phase in the furnace (III) The method of mechanically detaining the Shangyu Xuan (5) salt to the lower layer of the stone layer. The mechanical beneficiary refers to the use of mechanical means. For example, a concave mold made of graphite is used to push the molten salt into the lower layer of the stone layer. The garment - (iv) a method of stirring the liquid phase using a rotor. W. blowing the powder of the molten salt together with the inert gas The method in the liquid phase of the Shixi. After the impurities and the salt are removed by evaporation, if necessary, the residual molten salt can be removed by vacuum evacuating the inside of the container and can be cured by curing the crucible.冋 ( (4). In the case of (four), the so-called unidirectional solidification can be used to remove the residual impurities by segregation, and a higher purity can be obtained. When the metal is removed, it can be made into a higher purity stone eve. The removal of the metal can be carried out by a known general method. For example, it can be easily removed by (4) etc. by the true line scale. The specific example of the step S1, its function, and the like will be described in more detail below. (a) In the case of using sodium fluoride (NaF) as a molten salt. The proportion under 50〇t is about! 8, lighter than Shi Xi (about 2.6) light. Therefore, in the system, the interface between the lower layer of the liquid phase and the upper layer of the liquid phase is formed. In this case, it is considered that the following reaction occurs through the interface: boron (B) which is miscellaneous in the molten crucible is evaporated as a reactant to the gas phase, and a part of the solution is dissolved and transferred to the molten salt. 4NaF + B = 3Na + NaBF4, or 3NaF + B = 3Na + BF3 In addition, aluminum (A1), which is an impurity in the molten crucible, also reacts as follows. Unlike boron, the product has a low vapor pressure, so in this case it dissolves in the molten salt and is removed together when the molten salt is removed by evaporation. A1 + 6NaF = Na3AlF6 + 3Na In order for the reaction to proceed rapidly, it is important to remove the reactants quickly. The removal of the reactant is preferably carried out by blowing a carrier gas such as argon gas into the molten crucible in the system, and removing the reactant together with the carrier gas to the outside of the system. On the other hand, although a part of Na in NaF is ingested into the molten stone, it can be removed by the above-described alkali removal treatment.

NaBF4及BF3等雖認為會最先溶解於NaF中,但其蒸氣壓Although NaBF4 and BF3 are considered to be the first to dissolve in NaF, their vapor pressure

亦較尚,在製程中其大部分蒸發。即使假設雜質溶解於NaF 中,仍可藉由於製程後半提高溫度、或於減壓狀態下使其蒸 發,而將NaF與雜質一起蒸發去除。 鋁(A1)或鈣(Ca)亦藉同樣製程,由熔融矽被去除。鋁(A1) 或鈣(Ca)係與NaF反應,分別生成Na3A1F6、NaCaF5並溶解 於炫融鹽,在去除炫融鹽的製程中被去除。 尚且,亦可認為NaF與si反應而生成siF4,氣體SiF4與 雜質反應’任-情況下’雜質均可作成高蒸氣壓之氟化物而 100147271 18 201231392 被去除。 (b)使用NaF與SiF4之複合化合物(Na2SiF6)作為炫融趟 亦可使用耐與吨之複合化合物㈣灿乍:炫融 鹽。此時’ Na2S!F6係在成為液相前其一部分發生分解,成 為 NaF 與 SiF4。 由於SlF4為氣體,故若㈣砂匕機械性地押入至溶融石夕 中’則氣體與融液中之雜質反應而較佳。又,由於抑制祕 與液相梦(Si)的反應’故有提升精製奴產率的優越。 *此等反應’通常較佳係依〇·5〜2氣壓進行,經濟上較佳係 藉氬等惰性氣體經密封之大氣體。即使在大氣壓下,仍可使 溶融鹽幾乎蒸發。再者,於完全去除的情況,較佳係設為約 13〇〜_\(1〜1(^)之真空使其蒸發。藉此,變成融 液中僅有石夕,藉由鑄人至鑄模中即可輕易回收。 1.2.步驟S2 本發明之砂之製造方法中,具有與上述步驟W 步驟S2的特徵。步驟S2係於系統内 m r ^ ^ λ, 使3有雜貝之熔融 而_紐物藉冷财段冷“作為冷凝物的步驟。 二二=ΓΤ時’大部―未參與熔融 凝物中=於系統内藉冷凝手段冷凝為冷凝物。冷 中3有熔融鹽與熔融矽中之雜質。 本發明4之製造方法,較㈣含有藉由使上述冷凝物落 100147271 201231392 下至熔融矽,而使冷凝物中之熔融鹽與熔融矽接觸的步驟。 亦即’本發明之奴製造方法中,係將上述冷凝物於系統内 作為熔融鹽使用。 y心S2中’冷凝手段較佳係設於系統内之上部,更佳係 藉由將上述蒸發物冷卻冷凝而作為冷凝物的冷卻手段。所謂 系、克内之上σρ,係指溶融石夕或炫融鹽的上方,相對於炼融石夕 及熔融鹽之液相界面的位置。藉此,於冷凝手段中被冷凝的 冷凝物,藉由例如自祕τ、下降氣流料次落下至炫融 石夕’並參與反應。關於冷凝手段之具體形㈣於後述。 另卜更佳係使冷凝物之溫度成為炼融鹽之融點以下而使 其固化’並使凝@物落下至炫融⑭巾。藉由使冷凝物固化, 可抑制雜質溶解於凝固物中。又,凝固物之密度較高,可於 系統内自然流下,容易到達熔融矽中。It is also relatively common, and most of it evaporates during the process. Even if impurities are dissolved in NaF, NaF can be removed by evaporation together with impurities by increasing the temperature in the latter half of the process or by evaporating under reduced pressure. Aluminum (A1) or calcium (Ca) is also removed from the molten crucible by the same process. The aluminum (A1) or calcium (Ca) system reacts with NaF to form Na3A1F6 and NaCaF5, respectively, and dissolves in the smelting salt, which is removed in the process of removing the sulphate salt. Further, it is also considered that NaF reacts with si to form siF4, and gas SiF4 reacts with impurities, and any impurity can be used as a high vapor pressure fluoride. 100147271 18 201231392 is removed. (b) A composite compound of NaF and SiF4 (Na2SiF6) is used as a smelting enthalpy. A composite compound having a resistance to ton can also be used. At this time, the part of Na2S!F6 decomposes before it becomes a liquid phase, and becomes NaF and SiF4. Since SlF4 is a gas, it is preferable that the gas reacts with impurities in the melt if the (four) sand is mechanically pushed into the molten stone. Further, since the reaction between the secret and the liquid phase dream (Si) is suppressed, the superiority of the yield of the refined slave is enhanced. * These reactions are usually preferably carried out at a pressure of 5 to 2 Torr, and it is economically preferable to use a large gas sealed by an inert gas such as argon. Even at atmospheric pressure, the molten salt is almost evaporated. Furthermore, in the case of complete removal, it is preferably set to a vacuum of about 13 〇 _ _ (1 〜 1 (^) to evaporate. Thus, it becomes only a stone eve in the melt, by casting a person to It can be easily recovered in the mold. 1.2. Step S2 The method for producing the sand of the present invention has the feature of the above step W, step S2. Step S2 is in the system mr ^ ^ λ, so that 3 has the melting of the miscellaneous _ The cold things in the cold section of the cold goods "as a step of condensate. Two two = ΓΤ" most of the - not involved in the molten condensate = condensation in the system by condensation means condensate. Cold 3 has molten salt and melting 矽The method of the present invention has a step of contacting the molten salt in the condensate with the molten crucible by lowering the condensate 100147271 201231392 to the molten crucible. In the manufacturing method, the condensate is used as a molten salt in the system. The condensing means in the y-heart S2 is preferably provided in the upper part of the system, and more preferably, the condensate is cooled and condensed as a condensate. Cooling means. The so-called system, σ ρ above the gram, refers to the melting stone eve The position above the smelting salt relative to the liquid phase interface of the smelting stone and the molten salt. Thereby, the condensate condensed in the condensing means is dropped to the smelt by, for example, the self-secreting τ, the descending airflow Shi Xi' and participate in the reaction. The specific form of the condensing means (4) will be described later. It is better to make the temperature of the condensate below the melting point of the smelting salt to solidify it and make the condensed product fall to the smelt 14 By solidifying the condensate, it is possible to suppress the impurities from being dissolved in the coagulum. Moreover, the density of the coagulum is high, and it can naturally flow down in the system and easily reach the molten crucible.

尚且,在冷凝物固黏於冷凝手段時,較佳係藉由例如對A 凝物賦予振動、以了字㈣之棒㈣冷凝物等方法,使附著 於冷凝手段之冷凝物落下至熔融矽中。 如此’在本發明之石夕之製造方法中,係與步驟S1 -起進 行步驟S2。亦即’於步驟S1所蒸發之熔融鹽,在步驟S2 中,藉冷凝手段冷凝為冷凝物後,使該冷凝物落下雜融石夕 而作紐融㈣彻,藉此經tis當地形祕_與溶融趟 的界面。本發财,可於反應“内再顧熔融鹽,藉此, 可不浪費地將熔融鹽用於反應。 100147271 20 201231392 S2,錢心之製造方法中’係藉由上述步驟S1及步驟 將料It之雜f。然後’可於結束雜f之去除後, 之^Γ邊去除。又,料在欲提升純度時,可在溶融趟 後’重新添加溶融鹽,再度重複步驟S1、S2。 制時:可=收經蒸發去除的熔融鹽,則在下次以後的石夕精 ^製後再使融鹽。視情況’亦可在藉公知方法予 另外’本發明之石夕之製造方法中,亦可將步驟S2 射&於錢内被冷凝找融鹽、與㈣統外重新添加之溶 孤1別使用。例如,在溶融石夕中之雜質濃度較高、精製製 t之刖半於步驟S2藉冷凝手段在系統内將冷凝物 熔融鹽使用’在炫㈣巾之雜魏度較低之製程後半段 如=補製時間整體之8成以上時,紐㈣中之蝴濃度 成為質量基準計lppm以下時),係先將系統内之炫融鹽去 除後,由系統内投入新的熔融鹽(未使用之熔融鹽或精製後 之熔融鹽)接著進行步驟SI、S2。 步驟S2中,若含有雜質之冷凝物附著於冷凝手段,經過 一定時間後,冷凝物中所含之雜質量增加,則藉自然落下而 於系統内下部與熔融矽進行接觸之該冷凝物所含之雜質量 亦增加。 因此,本發明之矽之製造方法,係藉由進一步含有將附著 於冷凝手段之冷凝物由冷凝手段去除的步驟,而使雜質含量 100147271 21 201231392 較多之冷凝物去除’可減低藉自然落下等 融矽接觸之冷凝物中所含的雜質量。 〃、、’下部與熔 作為將附著於冷凝手段之冷凝物由冷凝手 段,可舉例如··將附著於冷凝物之冷凝手•未2 =的手 之冷凝手段交換的方法;或藉由將冷凝物去除之手段 於冷凝手段的冷凝物去除时法。作為將冷凝物去除的I 段,可舉例如對冷凝物賦予振動的手段、用於物 的手段(例如j字模等之棒)等。 叫各 2.其他形態 由含有卿銘㈧)及购等雜質之炫融石夕,將該雜質 =時間且同—製程有效率地去除的觀點而言,亦可設^ 有下述步驟的石夕之製造方法。 2.1·由系統内去除氡的形態 ^糸統内存在氧㈣況,該氧贿_崎 1=其是二氧切)。二氧化㈣'依固體狀存在於二 少/皿之界面’有時會使溶融鹽與溶融石夕之接觸界面減Further, when the condensate is fixed to the condensing means, it is preferable to cause the condensate adhering to the condensing means to fall into the melting enthalpy by, for example, imparting vibration to the A condensate and condensing the condensate by the word (4). . Thus, in the manufacturing method of the present invention, the step S2 is performed in step S1. That is, the molten salt evaporated in step S1 is condensed into condensate by means of condensation in step S2, and then the condensate is dropped into the amalgam and used as a nucleus (four), thereby passing the tis local shape _ The interface with the molten enthalpy. In the present invention, the molten salt can be reused in the reaction, whereby the molten salt can be used for the reaction without waste. 100147271 20 201231392 S2, in the manufacturing method of the money heart, the material is processed by the above steps S1 and Then, after the removal of the miscellaneous f, it can be removed. In addition, when the purity is desired, the molten salt can be re-added after the melting, and the steps S1 and S2 are repeated again. : can be = the molten salt removed by evaporation, and then the salt will be melted after the next Shi Xijing system. As the case may be, in the method of manufacturing the other method of the invention, Step S2 can be used to condense the salt in the money and to re-add the dissolved salt to the outside of (4). For example, the impurity concentration in the molten stone is higher, and the refining process is half-step. S2 uses the condensing means to use the condensate molten salt in the system. When the second half of the process with a low degree of heterogeneity in the Hyun (four) towel is more than 80% of the total replacement time, the concentration of the butterfly in the New (four) becomes the mass basis. After lppm or less), after removing the dazzling salt in the system, The new molten salt (unused molten salt or refined molten salt) is introduced into the system, followed by steps S1 and S2. In step S2, if the condensate containing impurities adheres to the condensing means, after a certain period of time, the condensate When the amount of impurities contained therein is increased, the amount of impurities contained in the condensate which is in contact with the molten crucible in the lower portion of the system by natural dropping is also increased. Therefore, the method for producing the crucible of the present invention is to be attached by further containing The step of removing the condensate from the condensing means by the condensing means, so that the condensate removal of the impurity content 100147271 21 201231392 can reduce the amount of impurities contained in the condensate which is contacted by the natural drop and the like. The lower portion and the melt are used as a means for condensing the condensate adhering to the condensing means, for example, by condensing a hand attached to the condensed hand of the condensate or not 2 = or by removing the condensate The method of removing the condensate by the condensing means. As the section I for removing the condensate, for example, means for imparting vibration to the condensate, and means for the object (for example) Such as j-shaped model and so on), etc. Called each other 2. Other forms are contained in the Qing Dynasty (8) and the purchase of impurities such as impurities, the impurity = time and the same process - efficient removal of the point of view, You can set up the manufacturing method of Shi Xi with the following steps. 2.1· The form of removing yttrium from the system ^There is oxygen in the system (4), the oxygen bribe _ saki 1 = it is dioxotomy. Dioxide (4) According to the solid form at the interface of the two less / dish 'sometimes, the interface between the molten salt and the molten stone is reduced.

亦即,因二氧各A 無法有㈣ 之生成,阻礙雜質與炫融鹽的反應,而 溶解㈣之虞。上述中,雖記載了使該氧化物 石夕的生成。孤者’但亦可藉由含有下述步驟以防止二氧化 100147271 、p猎由於系統内使不含氧之氣體流通,並含有由系統 22 201231392 内將氧去除至系統外之步驟,與使含有雜質之熔融矽與熔融 孤於系jt内接觸’使該炫㈣中之雜質與溶融鹽反應,而將 ,亥雜質去除至系統外之步驟㈣之製造方法,將系統内之氧 去除,結果可抑制三氧切之生成。 此時亦可藉由於熔融石夕之液相中吹入不含氧的氣體’使 系充内机通不3氧的氣體。藉此,溶融石夕中之氧亦可被趕出 至系統外,可進—步抑制二氧切的生成。 作為不含氧之氣體’較佳為氬氣。 另卜在系統内使不含氧之氣體流通時,亦可使用該氣體 作為載體ILw。亦即,可將由炫㈣被蒸發去除之雜質,以 不3氧之氣體作為載體氣體而去除至系統外 。藉此,可同時 進行氧之去除與雜質之去除。 2.2.將溶融㈣效率地回收再彻的形態 上述說明中,雖說明使在系統内蒸發之炼融鹽冷凝•落下 者’但亦可將蒸發之炫融鹽於系統外進行回收。例如,藉由 以:之石夕之製造方法’可有效率地將炫融鹽回收再利用。 可抑㈣融鹽之損失’不需準備新的熔融鹽,結果 1驟Γ广且有效率地精製㈣。其中,本形_ 1相反繼°在_態加人至本發明中時肩 如應用至在石夕精製完成後之溶融鹽的蒸發去除時。 有Hr含有下述步驟㈣之製造方法,可於系統外, 有效Μ地时熔融鹽(氣體狀、液狀或粉體狀):使含有雜 100147271 23 201231392 二 _舱融鹽於系統内接觸,使含有該 ::而作為蒸發物’藉此由該熔融矽去除該之熔融鹽 3有錢發物與雜質之煙氣,由吸引口進行、、、步顿;將 路徑去除H❹卜的步驟;聽时所吸引由後通 將所回收之煙氣精製而作為精製物的步驟;:的步领; κ 至系統内,使其血 、4製物投 、3有雜為之熔融矽接觸的步驟。又 、疑!it由可將所蒸發之輪鹽由吸引口不致發U 凝固而別’且可防止流通路徑中之㈣鹽之要之 言’較佳細則π或流通路徑設定成贿广觀點而 高溫。 叫之融點高的 另外,例如在將煙氣與賊氣體—起進行 由將流通路徑中之風速(m · S·1)設為5以上且3(u、情;兄’藉 抑制流通路徑中之溶融鹽的附著’可防止流通二下’亦可 另外、’在料時’亦可㈣丨口設置在㈣鹽或液 面附近。精此’可容易將吸引σ之溫度設為㈣鹽之融點以 上之溫度,並可有效率地吸弓丨所蒸發的溶融鹽。 另外,亦可於回收熔融鹽後進行精製。作為精製方法,例 如可在捕缝驗’使其冷麟冷聽,藉由使該冷 凝物依熔融鹽之融點以上的溫度進行熔融而予以精製。 例如’可使煙氣藉旋風器或袋濾器被冷凝,以冷凝物之形 式回收。 另外’亦可藉由濕式捕集將煙氣捕集至溶媒中作成聚料, 100147271 24 201231392 將該漿料賴_塊狀之冷凝物的形式 用水作為溶媒。又,藉丄 此τ週口使 收,亦可達到以下效果。式捕集而以塊狀之凝集物回 亦即,塊狀之凝集物可較粉體更容易進行炫融•精製。盆 =認為係因成為塊狀而空隙減少、密度變大,結果熱傳導 率皮尚,使熱容易料至㈣所致。縣,可使凝集物容易 W^有效杨將存在於㈣的雜質Μ去除、精製。 2·3.於大氣環境下製造矽的形態 已針對在使惰性氣體流通之下製切的形態進行說明。缺 而’例如在欲依大規模進㈣製造時,有難以❹統内完全 成為惰性氣體環境的情形。 由此觀點而言,認為若可於大氣環境下進行石夕製造,則可 有效地製造⑪。又,若可於大氣環境下進行製造則亦可抑制 製造成本。 然而,如上述般’在大氣環境下,有因氧與石夕反應而生成 二氧化碎,反應界面減少的問題。此問題例如可藉由下述之 矽之製造方法予以解決。 亦即’藉由下述石夕之製造方法,可使溶融石夕與溶融鹽適當 地接觸.具有使含有雜質之熔融矽與熔融鹽,於含有氧之系 統内接觸’而使雜融石夕中之雜質與㈣鹽反應,將該雜質 去除至系統外的步驟,而且,將熔融鹽供給至屬於熔融矽之 液面部分及/朗部、且不存仙與氧進行反應而生成之氧 100147271 25 201231392 化物的部分。 夺丫丨★可藉由使所生成之氧化物移動至炫融石夕的液 面而在熔阳虫石夕之液面部分及/或内部,作出不存在氧化物 的部分。 關於氧化物切動,除了使㈣械或道具使其移動之形態 、 、 藉由感應加熱對溶融石夕進行感應搜拌,引發 抓動而使氧化物移動至—定方向的形態;或藉由電t處理等 使氧化物進行移動辭以去除的形態。 再者,亦可為藉由將炫融鹽押入至炼融石夕之内部,而將熔 融鹽供給至_⑪内部之不存在氧化物的部分。 藉由以上形態, 炫融碎,依短時間 3.矽之製造裝置 可由含有硼(B)、鋁(A1)及鈣(Ca)等雜質之 且同一製程有效率地去除雜質。 切之製造方法的製造裝置。本發明之 „ 3有雜質之熔融矽與熔融鹽於系%内接 :外使雜融”之雜質與_反應,將該雜質去除:: …、9 3有雜質之熔融矽與熔融蜂接觸你 有該雜質讀衫發物 7 =,使 ㈣造裝置’其特徵為於系統内具備;=)除雜質 ⑴具有底部與側部與上部開口部,填充:二)。 熔融矽與上述熔融鹽的容哭 3有上述雜質 100147271 26 201231392 進行加熱的加 (2)將合有上述雜質之熔融矽與上述熔融鹽 熱手段 (3) 設於較上述容器之上述上部·部更切,使上述蒸 發物冷凝而作為冷凝物的冷凝手段 (4) 稭由與上述㈣鹽的反應而將由上述炫融頻去除的 上述雜質排出的排出手段 例如,藉由於腔室等之框體内設置上述容器、加熱手段 冷凝手段’可將該框體内設為「系統内」,將框體外設為「系 統外」1後’藉由於框體之—部分設置排出口作為排出手 段’則在縣奴精製時,可由系統_由排出口將雜質甚 發去除至系統外。 3.1.容器 -今杰係填域时與㈣鹽者,藉由於容㈣形成上述炫 :矽:熔融鹽的界面’則可使熔融矽中之雜質與熔融鹽反 雜質蒸發為氣相、或溶解於溶融鹽中而與該炫融 為氣相,藉此由熔融德由上述開口部及排出手 •k被去除至系統外。 特=r::f’若為可實施本發明切之製造方法則無 ^贿用由石墨或碳化石夕所構成的容m 適當決定可配合精製製狀_(加料狀規模)予以 3.2.加熱手段 100147271 27 201231392 加熱手段若為可對填充於容器内 <線融;ε夕邀松_ 加熱則無特別限定。尤其若使用感應加 ,、熔融鹽進行 熔融矽與熔融鹽進行感應攪拌,促進 使各器内之 3.3.冷凝手段 應’故較佳。 冷凝手段係設於容器之上部開口部的上 上述雜質之熔融鹽被蒸發而成的蒸發物冷若為可使含有 特別限定。冷凝手段較佳係藉由冷郤該蒸,為冷/疑物,則無 為冷凝物的冷卻手段。 物使其冷凝而作 例如,冷凝手段可設為具有朝系統内之上 的側壁,且上部及下部形成為開口部的中处:方向延伸存在 狀體之内部(中空部)中,存在溫度分佈,%茼狀體。此種筒 起遠離而跟著降低。亦即,經蒸發做度隨著由容器側 χ塔融鹽信險4 内部上昇而被冷卻,而最後被冷凝。 、攻者於筒狀體 本發明中之矽之製造裝置,較佳係進—牛 物作為熔融鹽再利用的手段。作為將冷疑V具備將上述冷凝 用的手段’可舉例如使其由容器之上部門物作為熔融鹽再利 的手段。作為使其由容器之上部開口^:部落下至熔融矽 段,具體可舉例如對冷凝物賦予振動的落下至熔融矽的手 物的手段(例如J字模等之棒)等。 ' 奴用於到落冷凝That is, since the formation of (4) by the dioxins A does not hinder the reaction of the impurities with the thixotropic salt, it dissolves (4). In the above, the formation of the oxide is described. The solitary 'but can also be prevented by the following steps to prevent the oxidation of 100147271, p hunting due to the circulation of oxygen-free gas in the system, and the removal of oxygen from the system 22 201231392 to the outside of the system The melting enthalpy of the impurity is contacted with the molten solute in the jt to cause the impurity in the smear (4) to react with the molten salt, and the manufacturing method of the step (4) of removing the impurity to the outside of the system removes oxygen in the system, and the result is Inhibit the formation of trioxane. At this time, it is also possible to charge a gas containing no oxygen by blowing a gas containing no oxygen into the liquid phase of the molten stone. Thereby, the oxygen in the molten stone can also be driven out of the system, and the formation of the dioxane can be inhibited step by step. As the oxygen-free gas, argon is preferred. Alternatively, when an oxygen-free gas is circulated in the system, the gas may be used as the carrier ILw. That is, impurities removed by evaporation (four) can be removed to the outside of the system by using a gas other than 3 oxygen as a carrier gas. Thereby, oxygen removal and impurity removal can be performed simultaneously. 2.2. In the case where the melting (4) is efficiently recovered, the above description will explain that the molten salt evaporated in the system is condensed and dropped, but the evaporated salt can be recovered outside the system. For example, the dazzling salt can be efficiently recycled by the method of manufacturing the stone. It can suppress (4) the loss of salt salt. It is not necessary to prepare a new molten salt. As a result, it is widely and efficiently refined (4). Wherein, the shape _ 1 is reversed when the _ state is added to the present invention, and the shoulder is applied to the evaporation removal of the molten salt after the completion of the refining of the stone. There is a manufacturing method in which Hr contains the following step (4), which can be used to melt the salt (gas, liquid or powder) when it is effectively smashed outside the system: the salt containing the salt of 100147271 23 201231392 is contacted in the system, The step of removing the path by removing the path of the molten salt from the molten salt by removing the molten salt from the molten salt by the molten enthalpy, and performing the stepping; At the time of listening, it is a step of refining the recovered flue gas as a refined product; the step of the κ to the system, the step of bringing the blood, the 4 product, and the 3 mixed impurities into contact with the system. . Also, doubt! It can be used to prevent the evaporation of the salt from the suction port without causing U to solidify, and to prevent the (four) salt in the circulation path, the best rule π or the circulation path is set to be a bribery view. high temperature. In addition, for example, when the flue gas is high with the thief gas, the wind speed (m · S·1) in the circulation path is set to 5 or more and 3 (u, love; brother 'by suppressing the circulation path The adhesion of the molten salt in the 'can prevent the flow of the second' can also be used, or the 'in the case of the material' can also be (4) the mouth is placed near the (four) salt or liquid surface. Fine this can easily set the temperature of the attraction σ to (four) salt At the temperature above the melting point, the molten salt evaporated by the bow can be efficiently sucked. In addition, the molten salt can be recovered after refining. As a refining method, for example, the trap can be checked to make it cold and cold. The condensate is purified by melting at a temperature above the melting point of the molten salt. For example, the flue gas can be condensed by a cyclone or a bag filter and recovered as a condensate. The wet trap captures the flue gas into the solvent to form a polymer. 100147271 24 201231392 The slurry is used as a solvent in the form of a condensate of block granules. The following effect: the trapping of the aggregate in the form of a block, that is, the block The agglomerate can be more easily smelted and refined than the powder. The basin is considered to be a block-like shape, and the voids are reduced and the density is increased. As a result, the thermal conductivity is still high, so that the heat is easily expected to be caused by (4). The agglomerates are easy to remove and refine the impurities present in (4). 2.3. The form in which the crucible is produced in an atmospheric environment has been described in terms of cutting under the circulation of an inert gas. In the case of a large-scale (4) manufacturing process, it is difficult to completely become an inert gas environment in the system. From this point of view, it is considered that if it can be manufactured in the atmosphere, it can be efficiently manufactured. If it can be manufactured in an atmospheric environment, the manufacturing cost can also be suppressed. However, as described above, in the atmospheric environment, there is a problem that the oxygen dioxide is reacted with the stone to form a oxidized ash, and the reaction interface is reduced. It is solved by the following manufacturing method. That is, by the following method of manufacturing the stone, the molten stone can be appropriately contacted with the molten salt, and the molten crucible containing the impurity and the molten salt are contained. a contact in the oxygen system to cause an impurity in the azalea to react with the (iv) salt, to remove the impurity to the outside of the system, and to supply the molten salt to the liquid portion and/or the portion belonging to the molten crucible, and Oxygen produced in the reaction with oxygen and does not exist in oxygen. 100147271 25 201231392 The part of the compound can be moved to the liquid surface of the fused sun worm by moving the generated oxide to the liquid surface of the scent Partially and / or internally, the part where the oxide is not present. Regarding the oxide cut, in addition to the shape of the movement of the tool or the prop, the induction of the molten stone by induction heating causes the grip to be triggered. a form in which the oxide is moved to a predetermined direction; or a form in which the oxide is removed by electric t treatment, etc. Further, the molten salt may be impregnated into the interior of the smelting stone. The molten salt is supplied to the portion of the inside of the -11 where no oxide is present. With the above form, it is possible to remove impurities by efficiently containing the impurities such as boron (B), aluminum (A1) and calcium (Ca) in the same process. A manufacturing apparatus for cutting a manufacturing method. In the present invention, the "melting enthalpy with impurities and the molten salt are inscribed in the system: the externally fused" impurities are reacted with _ to remove the impurities:: ..., 9 3 melted impurities with impurities contact with the molten bees There is the impurity reading shirt 7 =, so that the (four) building device 'is characterized by being provided in the system; =) except the impurity (1) has a bottom portion and a side portion and an upper opening portion, filled: b). The melting enthalpy and the above-mentioned molten salt are contained in the above-mentioned upper part of the above-mentioned container. Further, a condensing means for condensing the evaporant to serve as a condensate (4) a discharge means for discharging the impurities removed by the above-described squeezing frequency by a reaction with the salt of the above (4), for example, by a frame such as a chamber The inside of the container and the heating means condensing means can be set to "inside the system", and the outside of the frame is set to "outside the system" 1 and then "the outlet is provided as a discharge means by the frame" When the county slaves are refined, the impurities can be removed from the system by the system. 3.1. Container-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- In the molten salt, the liquid is melted into the gas phase, whereby the opening and the discharge hand are removed from the system by the melt. In particular, if r::f' is a manufacturing method in which the present invention can be carried out, the capacity of the graphite or the carbonaceous stone is not determined as appropriate, and can be appropriately adjusted in accordance with the refined form _ (feeding scale). Means 100147271 27 201231392 The heating means is not particularly limited as long as it can be filled in the container <line fusion; In particular, if induction heating is used, the molten salt is melted and the molten salt is inductively stirred to promote the 3.3. condensing means in each unit. The condensing means is provided on the opening of the upper portion of the container. The evaporating material obtained by evaporating the molten salt of the impurities is preferably cold-containing. Preferably, the condensing means is a cooling means for condensing by cooling the steam to be cold/suspect. For example, the condensation means may be provided with a side wall facing the inside of the system, and the upper portion and the lower portion are formed as a middle portion of the opening portion: the inner portion (hollow portion) of the direction extending body exists, and the temperature distribution exists. , % scorpion. This kind of tube is kept away from it and is lowered. That is, the degree of evaporation is cooled as it rises from the inside of the container side, and is finally condensed. The attacker is in the cylindrical body. The manufacturing apparatus of the present invention is preferably a means for recycling the bovine as a molten salt. The means for using the above-mentioned condensation for the cold suspect V is exemplified by, for example, a means for making a molten salt from the upper part of the container. Specifically, for example, a means for lowering the upper portion of the container from the lower portion to the melting portion, for example, a means for imparting a vibration to the condensate to the hand of the molten crucible (for example, a rod such as a J-shaped mold). ' slave used to fall condensation

D ,入丨小屯同狀體内部朝宏哭 部呈增加’藉由例如自然落下、下 =之_ 觸’並參盥反庫、。另一方而 而與熔卢 另方面,破蒸發去除之雜質因蒸^ 100147271 28 201231392 大,故在筒狀體内部中不發生冷凝而直接上昇、被排出至系 統外。藉此,可一邊去除雜質,一邊將冷凝之炫融鹽再度供 給至'J:容融石夕中。 尚且,經蒸發之熔融鹽可於筒狀體之中空之空間部被冷 卻•冷凝,亦可使其附著於筒狀體之内部側壁而冷凝。即使 是附著於内部侧壁之冷凝物,亦可藉由由側壁剝落,或由側 壁流落,而自然落下至容器的上部開口部。此時,若設置對 筒狀體施加振動的手段,則促進熔融鹽之落下故較佳。 筒狀體之形狀及尺寸並無特別限定。若為使蒸發之熔融鹽 冷卻冷凝、發生自由落下的構造即可,例如可設為具有與上 述容器之上部開口部相同程度尺寸的口(中空部),並由容器 朝上方延伸的筒狀體。 關於筒狀體之材質,亦若為可耐受系統内之溫度,不易與 所蒸發之熔融鹽產生反應者,則無特別限定。例如可設為與 上述容器相同的材質者。 另外,為了溫度控制,亦可於筒狀體之周圍設置陶瓷等之 斷熱材。進而亦可於筒狀體之開口部設置碳毛顫等過濾器以 僅使氣體逸出。 另外,在將冷凝手段設為筒狀體時,亦可於該筒狀體内部 設置分隔構材。藉由分隔構材,可增大筒狀體内部的表面 積。又,亦可抑制所蒸發之熔融鹽的上升。關於分隔構材之 形狀或材質並無特別限定。 100147271 29 201231392 另外’筒狀體之上部亦可被封閉。藉此可適當捕捉所蒸發 之熔融鹽。其中,在封閉筒狀體之上部時,作為被蒸發去除 之雜質的脫離路徑,較佳係在筒狀體與容器之間、或筒狀體 之側壁專設置間隙。藉此’可於系統内,防止不僅是炫融鹽、 雜質亦進行循環的情形。 另一方面,冷凝手段亦可為朝與系統内之上下方向呈交又 之方向延伸存在的板狀體。此種形態中,可於板狀體之容器 側表面附近,使所蒸發之熔融鹽冷凝。特佳係設為水冷定 盤°因其可更適當地使蒸發之熔融鹽冷凝。 關於板狀體之材質,若為上述筒狀體相同者即可。又,板 狀體之形狀、尺寸,可考慮容器之尺寸而予以適當決定。又, 在設為板狀體的情況,較佳係在板狀體與容器之間、或板狀 體之一部分’設置間隙或孔作為所蒸發去除之雜質的脫離路 徑。 板狀體之設置位置可為容器之上部開口部之上方。特佳係 設置於系統内充滿熔融鹽蒸氣的位置。 冷凝手段中,若使所蒸發之熔融鹽冷凝為融點以下,則可 期待使炫融鹽落下的效果。冷凝手段特佳係將蒸發之溶融鹽 冷卻至凝固點以下的手段。 因此’應避免不必要之溫度上昇,冷凝手段較佳係設於較 加熱手段更外側(上方)。例士口,在將加熱爐設為感應爐時, 較佳係設為具有朝較線圈更上方延伸存在之側壁的筒狀 100147271 30 201231392 體’或設於較線圈更上方的板狀體。 另外,本發明之矽之製造裝置,較佳係進一步具備將附著 於上述冷凝手段之冷凝物由冷凝手段去除的手段。藉由進一 步具備將降著於冷凝手段之冷凝物由冷凝手段去除的手 段,則可由冷凝手段去除雜質含量較多的冷凝物,使作為熔 融鹽使用之冷凝物中所含的雜質量減低。 作為由冷凝手段將附著於冷凝手段之冷凝物的手段,可舉 例如使冷凝物落下至熔融矽、用於反應的手段,將冷凝物去 除至系統外的手段。具體可舉例如:對冷凝物賦予振動的手 段,用於刮落冷凝物的手段(例如J字模等之棒);使冷凝物 成為高溫而排出至系統外的手段;設置成使系統内與系統外 連通的排出口等。此等手段可單獨使用,亦可組合使用。 3·4.排出手段 排出手段係將藉由與熔融鹽之反應而由熔融矽被去除的 雜質、使含有雜質之熔融鹽蒸發而成的蒸發物、或將該蒸發 物藉冷凝手段所冷凝成的冷凝物,排出至系統外的手段。本 發明之矽之製造裝置亦可具備複數之排出手段。 於此所謂排出’係指由系統内排出至系統外。亦即,作為 排出手段,可例如設置使系統内與系統外連通的排出口。如 上述’排出口可設於腔室等框體之一部。特佳係設於框體之 上部。 尚且’排出手段亦可為對使含有雜質之熔融鹽蒸發而成之 100147271 31 201231392 蒸發物進行吸引的吸引手段。藉此’可不使熔融鹽脫逸而將 其冷凝。 尚且,藉吸引手段被蒸發去除之雜質亦被吸引,但由於如 上述般被蒸發去除之雜質的蒸氣壓較大,故依氣體被去除至 系統外’或者因系統外之溫度較低’故仍被冷凝而與熔融鹽 一起被回收。 另外,本發明之矽之製造裝置中,亦可進一步具備用於回 收上述蒸發物的回收手段。回收手段較佳係設於製造裝置的 系統外。 例如,在完成石夕之精製後,將溶融鹽蒸發去除時,可藉回 收手段將經蒸發去除的炼融鹽於系統外進行回收,而可於下 一次的矽精製時作為熔融鹽再利用。 作為回收手段之具體例,較佳為旋風器、袋濾器或濕式捕 集手段的任·—種。 在結束石夕之精製,將炼融鹽進行蒸發去除時,係不使冷卻 手段作用(例如,改變筒狀體或板狀體的方向,或由系統内 將狀體或板狀體拆除至㈣料)。藉此,可順利地將溶 融鹽蒸發去除。 月之石夕之製造裝置亦可具備將炫融鹽添加至上述容 二广在將熔融鹽添加至容器時,可添加液狀之炫融 可添加作成固體狀的溶融鹽。任—情況下,均可例如 通過原材料投人哦人管)添加至容器中,或由裝人有㈣ 100147271 32 201231392 鹽之桶(bucket)直接添加至容器中。在 鹽添加至容器中時,可添加奴之熔融 形為棒罐繼入 以下更詳細說明本發明之 以外的其他構成等。夕之錢裝置的具體例,及上述 3.5.1.矽之製造裝置 圖1係概略表示一會祐# 只知形怨之本發明之矽之製 100。該製造裝置100係由 坆羞置 乳體予以雄、封的桓體7、配置於 瑪)3、感應加熱用之後願4 石4的各器(掛 之線SU、斷熱材8、支肋禍3的支^ :H)、及用於轉入,夕的鑄模9 牙 2係依液相分離之形式填充於掛禍3中。 _ 框體7安襄有翁迸 口 6算於伟田 U、排氣口 12、原材料投入 口6等。於使用直空宜 〇.〇!〜2xH)5P G、 體7時,可將腔室中控制為 a /空至2氣壓)左右的壓力範圍,但以通常之 Ar之惰性氣體密封框體者較經濟。 可:體卜地2加熱用之線圈4、斷熱材8、_ 3係形成為 體地傾動,使處理完畢之溶融石夕i流入至鑄模9卜 圖1中,首告,n-, 无k出位於坩堝3上方之筒或上部為蓋之筒 - 的空間’將粉或粒狀之炼融鹽由原材料投入 口依4量投人至細絲面,投人後,再 設置於 坩堝3之上方。 100147271 33 201231392 所投入之熔融鹽係於加熱熔融後進行蒸發’但在筒13中 蒸氣上升時被冷卻冷凝,成為液狀或固體狀’由於密度較 高,故再次自然落下至坩堝3中而進行循環。 藉此,可使與反應無關而浪費性地蒸發之熔融鹽減少° 又,熔融矽1中之雜質係與熔融鹽2反應而成為氣體狀反應 生成物。該氣體狀反應生成物,係由筒13之上部開口、或 坩堝3與筒13之間的間隙η被去除至系統外’並被精製為 溶融石夕。又,為了將氣體狀反應生成物效率更佳地排出至系 統外,有效的是在筒13之一部分上打通可使氣體通過的小 疋時間後,使筒13遠離坩禍3,使剩餘之炫融鹽蒸發 此時,由於在熔融鹽中亦微量溶解著雜質,故藉此製裎亦 :融矽被精製。蒸發物係由排氣口 12被排出至系統外。 需要’藉由重複此等步驟,則㈣㈣1高純度化。 在位於时禍3上方的筒、或上部為蓋之筒1D, the inside of the scorpion is increased toward the macro crying department by 'for example, natural falling, lower = _ touch' and participating in the anti-library. On the other hand, and the other side, the impurities removed by evaporation are large because of the evaporation of 100147271 28 201231392. Therefore, the inside of the cylindrical body does not condense and rises directly, and is discharged to the outside of the system. Thereby, the condensed molten salt can be supplied again to the 'J: Rong Rongshi in the evening while removing the impurities. Further, the evaporated molten salt may be cooled or condensed in the hollow space portion of the cylindrical body, or may be attached to the inner side wall of the cylindrical body to be condensed. Even the condensate attached to the inner side wall can be naturally dropped to the upper opening portion of the container by peeling off from the side wall or flowing from the side wall. At this time, it is preferable to provide a means for applying vibration to the cylindrical body to promote the falling of the molten salt. The shape and size of the cylindrical body are not particularly limited. In order to cool and condense the evaporated molten salt and to fall freely, for example, it may be a cylindrical body having a port (hollow portion) having the same size as the opening of the upper portion of the container and extending upward from the container. . The material of the cylindrical body is not particularly limited as long as it can withstand the temperature in the system and is less likely to react with the evaporated molten salt. For example, it can be set to the same material as the above container. Further, for temperature control, a heat insulating material such as ceramic may be provided around the cylindrical body. Further, a filter such as carbon fluff may be provided in the opening of the cylindrical body to allow only gas to escape. Further, when the condensing means is a cylindrical body, a partition member may be provided inside the cylindrical body. By separating the members, the surface area inside the cylindrical body can be increased. Moreover, the rise of the evaporated molten salt can also be suppressed. The shape or material of the partition member is not particularly limited. 100147271 29 201231392 In addition, the upper part of the cylindrical body can also be closed. Thereby, the evaporated molten salt can be appropriately captured. Among them, when the upper portion of the cylindrical body is closed, the detachment path as the impurity to be removed by evaporation is preferably provided with a gap between the cylindrical body and the container or the side wall of the cylindrical body. In this way, it is possible to prevent the circulation of impurities and impurities not only in the system. On the other hand, the condensing means may be a plate-like body extending in a direction intersecting the upper and lower directions in the system. In this form, the evaporated molten salt can be condensed in the vicinity of the container side surface of the plate-like body. The special system is set as a water-cooled plate because it can more appropriately condense the evaporated molten salt. The material of the plate-like body may be the same as the above-mentioned cylindrical body. Further, the shape and size of the plate-shaped body can be appropriately determined in consideration of the size of the container. Further, in the case of a plate-like body, it is preferable to provide a gap or a hole as a detachment path for the impurities to be removed by evaporation between the plate-like body and the container or at a portion of the plate-like body. The plate-like body is disposed above the opening of the upper portion of the container. The special system is installed in the system filled with molten salt vapor. In the condensation means, if the evaporated molten salt is condensed to a melting point or less, the effect of dropping the molten salt can be expected. The condensing means is particularly preferred as means for cooling the evaporated molten salt to below the freezing point. Therefore, the unnecessary temperature rise should be avoided, and the condensing means is preferably disposed on the outer side (upper side) than the heating means. In the example, when the heating furnace is used as an induction furnace, it is preferable to use a cylindrical shape having a side wall extending upward from the coil, or a plate-shaped body provided above the coil. Further, in the manufacturing apparatus of the present invention, it is preferable to further provide means for removing the condensate adhering to the condensation means by the condensation means. Further, by means of a means for removing the condensate falling on the condensing means by the condensing means, the condensate having a large amount of impurities can be removed by the condensing means, and the amount of impurities contained in the condensate used as the molten salt can be reduced. The means for adhering the condensate to the condensing means by the condensing means may, for example, be a means for dropping the condensate to the melting enthalpy, for the reaction, and removing the condensate to the outside of the system. Specifically, for example, means for imparting vibration to the condensate, means for scraping off the condensate (for example, a rod such as a J-shaped mold), means for discharging the condensate to a high temperature and discharging it to the outside of the system, and setting the system and the system Externally connected discharge ports, etc. These means may be used alone or in combination. 3. The discharge means discharge means is an evaporate obtained by evaporating a molten salt by a reaction with a molten salt, evaporating a molten salt containing the impurity, or condensing the evaporated product by condensation means. The condensate is discharged to the outside of the system. The manufacturing apparatus of the present invention may also have a plurality of means for discharging. The term "discharge" as used herein refers to the discharge from the system to the outside of the system. That is, as the discharging means, for example, a discharge port for communicating the outside of the system with the outside of the system can be provided. The above-mentioned "discharge port" may be provided in one of the casings such as the chamber. The special system is located on the upper part of the frame. Further, the means for discharging may be a suction means for attracting the evaporate of 100147271 31 201231392 which is obtained by evaporating a molten salt containing impurities. Thereby, the molten salt can be condensed without being escaping. Moreover, the impurities which are removed by evaporation by the attraction means are also attracted, but since the vapor pressure of the impurities which are evaporated by the above is large, the gas is removed to the outside of the system or the temperature outside the system is low. It is condensed and recovered together with the molten salt. Further, in the manufacturing apparatus of the present invention, the means for recovering the evaporating material may be further provided. Preferably, the means of recovery is external to the system of the manufacturing apparatus. For example, after the completion of the purification of Shi Xi, when the molten salt is removed by evaporation, the evaporated salt removed by evaporation can be recovered outside the system by means of recovery, and can be reused as a molten salt in the next purification of the crucible. Specific examples of the means for recovery are preferably those of a cyclone, a bag filter or a wet trapping means. When the refining of Shi Xi is carried out and the smelting salt is removed by evaporation, the cooling means is not acted upon (for example, changing the direction of the cylindrical body or the plate-like body, or removing the shape or the plate-like body from the system to (4) material). Thereby, the molten salt can be smoothly removed by evaporation. In the manufacturing apparatus of the Shishishi, the molten salt may be added to the above-mentioned Rongjiguang. When the molten salt is added to the container, a molten salt which can be added as a solid can be added. In any case, it can be added to the container, for example, by means of a raw material, or it can be directly added to the container by a person who has a (4) 100147271 32 201231392 salt bucket. When the salt is added to the container, the molten form of the slave may be added as a can. Next, the other constitutions and the like other than the present invention will be described in more detail. Specific examples of the money device of the eve, and the manufacturing device of the above 3.5.1. Fig. 1 is a schematic view showing the system 100 of the invention of the present invention. The manufacturing apparatus 100 is composed of a male body, a sealed body 7 and a horse body 3, and a device for the 4th stone 4 after the induction heating (hanging line SU, heat-dissipating material 8, and ribs). The support of the disaster 3: H), and the mold for the transfer, the 9th tooth of the eve is filled in the form of liquid phase separation in the form of liquid phase separation. _ Frame 7 Anzhen has Weng迸 mouth 6 counted in Weitian U, exhaust port 12, raw material input port 6, etc. For use in straight space, please use 〇!~2xH)5P G, body 7 can control the pressure range from a / air to 2 air pressure in the chamber, but seal the frame with the inert gas of the usual Ar More economical. The body coil 2, the heat-dissipating material 8, and the _ 3 system are formed to be body-tilted, so that the processed molten stone i flows into the mold 9 and is shown in Fig. 1, the first report, n-, k out of the tube above the 坩埚3 or the space above the lid - the smelt salt of powder or granules is injected into the filament surface by the raw material input port, and then placed on the 坩埚3 Above. 100147271 33 201231392 The molten salt to be charged is evaporated by heating and melting, but is cooled and condensed when the vapor rises in the tube 13 to become liquid or solid. 'Because of the high density, it is naturally dropped into the crucible 3. cycle. Thereby, the molten salt which is wastefully evaporated irrespective of the reaction can be reduced. Further, the impurity in the molten crucible 1 reacts with the molten salt 2 to form a gaseous reaction product. The gaseous reaction product is removed from the upper portion of the cylinder 13 or the gap η between the crucible 3 and the cylinder 13 is removed to the outside of the system and refined into a molten stone. Further, in order to discharge the gaseous reaction product more efficiently to the outside of the system, it is effective to open the tube 13 away from the trouble 3 after a small amount of time for the gas to pass through the portion of the tube 13 to make the remaining dazzle At this time, since the molten salt is evaporated, impurities are also slightly dissolved in the molten salt, so that the crucible is also refined. The evaporant is discharged from the exhaust port 12 to the outside of the system. It is necessary to 'by repeating these steps, then (4) (4) 1 is highly purified. In the tube above the time 3, or in the upper part of the tube 1

佳=塗佈氧化物或氮化物’例如二氧切或氡切J 佈向純度之二氧切或氮化歡粒子。藉…、可 易防止NaF的固點。 9 種塗佈’可 3.5.2.矽之製造裝置200 圖2係概略# -— 200 表不一貫施形態之本發明 〇。圖2之製造七 月之矽的製造裝 、裝置200中,有鑑於移 衣 面時則有利於雜質虛 述兩液相之. 質處理’故错由將屬於惰性氣體… 100147271 霞之鼠4藉: 34 201231392 體吹入管25吹入於液相中, 田, 授择液相’則可改善兩液相 界面的接觸狀態。藉此,可古^i l 有效率地將界面之 成物與惰性氣體一起排出。 〃 … 關於炫融石夕1之漏,除了上述之氣體吹入以外,使用高 頻感應爐對矽液相進行感應攪 見件次於^喊秒1十使攪拌板 旋轉以攪拌液相的方法亦屬有效。 在感應加熱的情況,若使 Κ用冤源之頻率較低、例如 0.5〜5ΚΗζ左右的電源,則 在矽嘁液内發生感應電流,發生 特有之稅摔現象,故較佳。尤i 3 τ 疋具疋此情況下,由於不需要將 攪拌板等插入至石夕融液入的機械性攪拌即可攪拌融液,故由 污染方面而言亦屬較佳。 3-5.3.矽之製造裝置3〇〇 圖3係概略表示一實施形態之本發明之石夕之製造裝置 3(^。圖3之石夕之製造裝f 3〇〇中,係取代石夕之製造裝置· 之筒13 ’設置板33。如此,藉由取代筒13而將板33設置 成與系統内之上下方向呈交又,則在板33之掛堝3側之表 面附近,可適當地使蒸發之熔融鹽被冷凝。 藉由石夕之製造裝置100、200、300所例示之>5夕之製造裝 置,可適當地實施上述本發明之矽之製造方法。 3.5.4.其他形態 由從含有硼(B)、鋁(A1)及鈣(Ca)等雜質之熔融矽,依短時 間且同一製程有效率地去除該雜質的觀點而言,亦可作成具 100147271 35 201231392 備下述構成的石夕之製造裝置。 例如,屬於使含 使含有該雜質之卜之炫㈣與溶融鹽於系統内接觸, 雜質之煙“㈣"!=發為紐物,將含㈣紐物與該 裝置,其^_1^利而錯至系統外㈣之製造 ==:r與炫融鹽的容器,含有雜質· 液面相對向之二:的加熱手段;設於與炫融石夕及溶融鹽之 統外的流通畔.r及弓丨σ;以及與吸引口連接並延伸至系 及回收手段·二==置連:於流通路徑之吸引手段 除至系料則嗜由流輯㈣吸引.去 融鹽,並可再利用_=於糸統外的回收手段,可回收熔 晉且可③於及縣鹽之液面相對向的位 置’且5又於較容器之上部開口部更下方。又,為了有效率地 吸引所蒸發⑽_或雜質’較佳係將填紐 之容器側壁之最上端部的風速(m·/)設為〇 5以上。- =路徑之直經時’則風速增大,可抑_附著 於路徑壁面的情形,故較佳,若過小則壓力損失變大。因此, 較佳係依流通路徑之風速(m · 一)為5以上且3〇以下的 決定流通路徑的直徑與風量。 ^ 此種形態中,由於對回收之炫融鹽進行精製,故亦可進一 100147271 36 201231392 中之雜質去 步於系統外具備使熔融鹽熔融的加熱手严#由 熔融鹽加熱熔融,則可將溶解·殘存於熔:: 除。 作為回收手段之形態並無特別限定,可舉例如旋 遽器或濕式㈣手段等。於使用濕式捕集手段時,較佳;衣 用水作為溶媒。 x 係使 圖4係概略表示-實施形態之石夕之製造襄置_。圖 石夕之製造裝置4GG中,係取代砂之製造裝置之筒η, 而設置吸引手段40。吸引手段4G之吸引口係設置於與炫融 矽1及熔融鹽2之液面相對向的位置。 另外,由於吸引口設置於㈣3之内側(較上部開口部更 下方),故可有效地吸引蒸發之熔融鹽。藉此,可不使熔融 鹽在吸引口被冷凝而有效地進行吸引。 根據以上所述之矽之製造裝置,可適當地實施本發明之矽 的製造方法。由本發明之矽之製造方法所得的矽的雜質濃 度,硼(Β)較佳為2.〇ppm以下、更佳i 5ppm以下、再更佳 l.Oppm以下、特佳〇 5ppm以下。 另外’銘(A1)通常較佳為2〇ρριη以下、更佳iSppm以下、 再更佳2ppm以下、特佳lppm以下。再者,鈣(Ca)通常較 佳為20ppm以下、更佳5ppm以下、再更佳2ppm以下、特 佳lppm以下。 尚且’本發明之製造方法中,藉由重複數次上述步驟S1、 100147271 37 201231392 S2 ’則可使雜質濃度更加小於上述值。 夕中之雜負〉辰度可例如藉由ICP-MS(Inductively Coupled Plasma Mass Spectrometer :高頻感應偶合電漿質量分析計) 進行分析。 由本發明之矽之製造方法所得的矽,亦可藉由進一步組合 其他精製方法而提高純度。 4.矽之用途 藉本發明之矽之製造方法所得的矽,可藉由公知方法進行 加工,使用作為例如太陽電池用之矽鑄錠或矽晶圓。又,亦 可使用作為製作太陽電池元件或太陽電池用面板時所使用 的南純度石夕。 (實施例) 以下,藉實施例更具體說明本發明,但本發明係在不超過 其要旨之前提下,並不限制於以下實施例。 尚且,以下實施例中,矽中之雜質濃度(ppm)係藉由 ICP-MS(Inductively Coupled Plasma Mass Spectrometer :高 頻感應偶合電漿質量分析計)所分析的值(質量基準)。 另外’實施例所使用之原料金屬矽的雜質濃度,係硼(B): llppm、磷(P) : 13ppm、鐵(Fe) : 190ppm、鈦(Ti) : 34ppm、 在呂(Al) . 220ppm、#5(Ca) . 4.1ppm、納(Na) : 0_4ppm。 (實施例1) 於圖1所示之裝置中,由氬予以密封,並將框體7内設為 100147271 38 201231392 大氣壓,將精製用之原料金屬矽3kg置入石墨製坩堝3中, 加熱溶解至約Η50Ϊ。其後,將與使_ 3倒轉者相同形 態的筒13,由坩堝3上部取出,將熔融鹽(NaF)由原材料投 入口 6投入〇.5kg後,再將筒13覆蓋於坩堝3上部,放置二 小時。 於放置期間,認為係與矽反應生成之氣體由坩堝3與筒 13之間隙14被放出。其後,將筒13由坩堝3上部取出, 將熔融鹽(NaF)全部蒸發去除。如此,熔融鹽之添加係每次 〇.5kg而進行6次,分別進行與上述同樣的操作,最後傾動 掛禍3 ’將石夕傾鑄於鑄模中並使其固化。實驗後,觀察筒丄3 之内部,結果除了接近禍3之部分以外,幾乎未附著有溶 融鹽(NaF)之蒸發物。 在第1次至第6次之實驗期間對矽進行採樣,結果所得矽 中之主要之雜質濃度如下。 第 2 次:硼(B): 4.7ppm、構(P): 19ppm、鐵(Fe): 200ppm、 鈦(Ti)34ppm、銘(Al) : 5.5ppm、飼(Ca) : 2.5ppm、納(Na): 9.4ppm 第 4 次:硼(B): 2.1ppm、石粦(P): 17ppm、鐵(Fe): 200ppm、 鈦(Ti)33ppm、|呂(Al) : 2.1ppm、i弓(Ca) : 1.7ppm、納(Na): 19ppm 第 6 次:硼(B): l.Oppm、填(P): 18ppm、鐵(Fe): 190ppm、 鈦(Ti)34ppm、|g(Al) : l.Oppm、飼(Ca) : 1.2ppm、納(Na): 100147271 39 201231392 15ppm 第6次(NaF之總投入量為3kg)時,硼減少至原本原料的 約10%,並與鋁、鈣一起大幅減少,鈉濃度亦充分降低至可 在其後製程予以去除的程度。又,若持續此製程,則可使硼 濃度降低。 (實施例2) 除了如圖2所示,在熔融矽中添入氣體吹入管25並吹入 氬氣’炫融鹽之添加係每次〇.5kg而進行3次以外,其餘依 與實施例1完全相同的條件進行實驗。氬氣係設為於實驗中 經常依500ccm持續吹入的狀態。 與實施例1相同’於實驗後觀察筒13之内部,結果除了 接近坩堝之部分以外’幾乎未附著熔融鹽(NaF)的蒸發物。 其中,於氬之吹入管之一部分附著有NaF。其認為係在熔融 鹽之蒸發去除時,NaF在氬之吹入管之一部分被冷卻所致。 第3次(NaF之總投入量為1.5kg)時,所得石夕中主要之雜 質濃度係硼(B) : 1.8ppm、磷(P) : 16ppm、鐵(Fe) : 250ppm、 鈦(Ti)38ppm、紹(Al) : 1.2ppm、妈(Ca) : 1.8ppm ' 鈉(Na): 6.2ppm,硼、鋁、鈣一起減少,鈉之濃度亦充分降低至可於 其後製程予以去除的程度。 (比較例1) 於圖1中,未在坩鍋3上方設置筒13,依坩堝3上方呈 開放的形式’進行同樣實驗。其中’此時,由於熔融鹽(NaF) 100147271 40 201231392 之蒸發激烈,故將炫融鹽之添加設成每次為實施例之2倍 (lkg),並投入3次。 第3次(NaF之總投入量為3kg)時,所得石夕中主要之雜質 濃度係硼(B) : 3.3ppm、磷(P) : 14ppm、鐵(Fe) : 86ppm、鈦 (Ti)41ppm、鋁(Al): 4.4ppm、鈣(Ca): 2.1ppm、鈉(Na): 33ppm, 鋁、鈣雖減少,投入NaF雖較多,但硼僅減少至原本原料 的30°/。左右,屬不充足。可知未參與反應而直接蒸發之NaF 大量存在。 尚且’本實施例中所使用之NaF之雜質濃度,係硼(B): 0.5ppm、填(P) : 1.2ppm。 由實施例1及2以及比較例丨的結果可知,藉由使含有雜 質之熔融鹽蒸發而成之蒸發物,藉冷凝手段冷凝為冷凝物, 則可將該冷凝物再利用作為熔融鹽,減低熔融鹽之使用量, 有效地進行矽精製。 (實施例3〜6) 除了將NaF對熔融矽之添加量、NaF添加次數、處理時 間(保持筒13之時間)設為表丨所示之條件以外’其餘與實 施例1同樣進行實驗。表1中,所謂「冷凝手段」為「有」, 係指於坩堝3上方設置筒13。又,所謂「由冷凝手段之冷 凝物去除」為「無」,係指於處理中使用同一筒13。 (實施例7〜13) 除了將NaF對熔融矽之添加量、NaF添加次數、處理時 100147271 41 201231392 間(保持筒13之時間)設為表1所示之條件以外,其餘與實 施例1同樣進行實驗。表丨中,所謂「由冷凝手段之冷凝物 去除」為「有」’係指於處理中將筒13交換為未附著冷凝物 的筒13。 關於實施例7 ’係進行6次之5G()gNaF添力σ(添加量係相 對於Si為1〇〇%) ’每次添加保持i小時。實施例7中筒 13之交換係於處理開始經過1小時後進行。 關於實施例8〜丨〇,係將第1次之NaF添加量為5〇〇g,第 2次以後則每次添加25〇g,每次添加保持丨5小時。實施例 8〜10中’筒13之交換係與實施例7相同,於處理開始經過 1小時後進行。 關於實施例11〜13,係將第1次之NaF添加量設為500g, 第2次以後每次添加200g,每次添加保持丨小時。筒13之 交換係與實施例相同,於處理開始經過丨小時後進行。 (比較例2〜4) 除了將NaF對熔融矽之添加量、NaF添加次數、處理時 間設為表1所示之條件以外,其餘與比較例丨同樣進行實驗。 將實施例3〜13及比較例2〜4之矽中的雜質濃度、矽中之 硼(B)殘存率、產率示於表1。又,表1中,所謂「蝴(b)殘 存率」’係指相對於硼初期濃度之測定時點的濃度比。又, 所謂「產率」’係指所鑄入(回收)之矽量相對於所溶解之矽 量的比例(%)。 100147271 42 201231392Preferably, the oxide or nitride is coated, for example, by dioxo or chopping, to the purity of the dioxate or nitrided particles. By means of ..., it is easy to prevent the fixing point of NaF. Nine types of coatings can be used as the manufacturing apparatus 200 of 3.5.2. 图 Figure 2 is a schematic diagram of the present invention. In the manufacturing apparatus and apparatus 200 of Fig. 2 after the manufacture of July, in view of the fact that the transfer surface is favorable for the impurity to describe the two liquid phases. The quality treatment is caused by the inert gas... 100147271 : 34 201231392 The body blowing pipe 25 is blown into the liquid phase, and the field is selected to improve the contact state of the two liquid phase interfaces. Thereby, the interface product can be efficiently discharged together with the inert gas. 〃 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于It is also valid. In the case of induction heating, if a power source having a low frequency, for example, about 0.5 to 5 Torr, is used, an induced current is generated in the sputum, and a characteristic tax drop phenomenon occurs, which is preferable. In this case, since it is not necessary to insert a stirring plate or the like into the mechanical stirring of the Shixi melt, the melt can be stirred, which is preferable in terms of pollution. 3-5.3. Manufacturing apparatus 3 of FIG. 3 is a schematic view showing a manufacturing apparatus 3 of the present invention of the present invention (FIG. 3). The manufacturing apparatus·cylinder 13' is provided with a plate 33. Thus, by arranging the plate 33 in place of the upper and lower directions in the system instead of the tube 13, the surface of the plate 33 can be appropriately placed near the surface of the hanging plate 3 side. The evaporating molten salt is condensed in the ground. The manufacturing method of the above-described enamel of the present invention can be suitably carried out by the manufacturing apparatus of the present invention 100, 200, and 300. The form is prepared from a melting crucible containing impurities such as boron (B), aluminum (A1), and calcium (Ca), and can be efficiently removed in a short period of time and in the same process, and can also be prepared as 100147271 35 201231392. For example, it is a device for manufacturing Shi Xi, which is composed of, for example, a halogen (4) containing the impurity and a molten salt in contact with the system, and the smoke of the impurity "(4)"!= is a new object, and the (four) The device, which is manufactured to the outside of the system (4), has a container of ==:r and a molten salt, and contains impurities. · The liquid surface is opposite to the second: the heating means; it is located in the circulation of the smelting stone and the molten salt. r and bow σ; and connected to the suction port and extended to the system and recycling means · two = = Connected: In addition to the material, the attraction means in the circulation path is attracted by the flow series (4). It can be used to melt the salt, and can be reused. _=Recycling means outside the system can be recycled and can be recycled in the county. The position of the salt liquid is opposite to the position 'and 5 is lower than the upper portion of the upper portion of the container. Further, in order to efficiently attract the evaporated (10)_ or impurity', it is preferable to fill the uppermost end of the side wall of the container of the filling. The wind speed (m·/) is set to 〇5 or more. - = When the path is straight, the wind speed is increased, and it is suppressed to adhere to the wall surface of the path. Therefore, if it is too small, the pressure loss becomes large. According to the wind speed (m · 1) of the flow path, the diameter and the air volume of the flow path are determined to be 5 or more and 3 or less. ^ In this form, since the recovered thaw salt is refined, it is possible to enter a 100147271 36 The impurity in 201231392 goes out of the system and has a heating hand that melts the molten salt. The form of the recovery means is not particularly limited, and may be, for example, a rotator or a wet type (four) means, etc., preferably when a wet type collection means is used; In the manufacturing apparatus 4GG of the embodiment of the present invention, the suction means 40 is provided instead of the cylinder η of the manufacturing apparatus of the sand. The suction port of the suction means 4G is provided at a position facing the liquid surface of the smelting smelt 1 and the molten salt 2. Further, since the suction port is provided inside the (4) 3 (lower than the upper opening), the suction port can be effectively attracted. Evaporated molten salt. Thereby, the molten salt can be efficiently sucked without being condensed at the suction port. According to the manufacturing apparatus described above, the manufacturing method of the crucible of the present invention can be suitably carried out. The impurity concentration of ruthenium obtained by the method for producing ruthenium according to the present invention is preferably 2. 〇 ppm or less, more preferably i 5 ppm or less, still more preferably 1.0 ppm or less, and particularly preferably 5 ppm or less. Further, 'M1' is usually preferably 2 〇ρρηη or less, more preferably iSppm or less, still more preferably 2 ppm or less, and particularly preferably 1 ppm or less. Further, calcium (Ca) is usually preferably 20 ppm or less, more preferably 5 ppm or less, still more preferably 2 ppm or less, and particularly preferably 1 ppm or less. Further, in the manufacturing method of the present invention, the impurity concentration can be made smaller than the above value by repeating the above steps S1, 100147271 37 201231392 S2 '. In the evening, the chromaticity can be analyzed by, for example, ICP-MS (Inductively Coupled Plasma Mass Spectrometer). The hydrazine obtained by the production method of the mash of the present invention can also be improved in purity by further combining other purification methods. 4. Use of the crucible The crucible obtained by the production method of the crucible of the present invention can be processed by a known method and used as, for example, a tantalum ingot or a tantalum wafer for a solar cell. Further, it is also possible to use the southern purity stone used as a solar cell element or a solar cell panel. (Examples) Hereinafter, the present invention will be specifically described by way of Examples, but the present invention is not to be construed as limited to Further, in the following examples, the impurity concentration (ppm) in the crucible is a value (mass basis) analyzed by an ICP-MS (Inductively Coupled Plasma Mass Spectrometer). Further, the impurity concentration of the raw material metal ruthenium used in the examples was boron (B): ll ppm, phosphorus (P): 13 ppm, iron (Fe): 190 ppm, titanium (Ti): 34 ppm, and Lu (Al). 220 ppm. , #5(Ca) . 4.1 ppm, nano (Na): 0_4 ppm. (Example 1) In the apparatus shown in Fig. 1, it was sealed with argon, and the inside of the frame 7 was set to 100147271 38 201231392 atmosphere, and 3 kg of the raw material metal crucible for purification was placed in a graphite crucible 3, and dissolved by heating. Up to about 50 baht. Thereafter, the cylinder 13 having the same shape as that of the _3 reversal is taken out from the upper portion of the crucible 3, and the molten salt (NaF) is introduced into the crucible of 5 kg from the raw material input port 6, and then the cylinder 13 is placed over the upper portion of the crucible 3, and placed. Two hours. During the standing period, it is considered that the gas generated by the reaction with the hydrazine is released by the gap 14 between the crucible 3 and the cylinder 13. Thereafter, the canister 13 was taken out from the upper portion of the crucible 3, and all of the molten salt (NaF) was evaporated. In this manner, the addition of the molten salt was carried out 6 times per 〇5 kg, and the same operation as described above was carried out, respectively, and finally the tilting was carried out 3', and the stone was poured into a mold and solidified. After the experiment, the inside of the cartridge 3 was observed, and as a result, the evaporated salt of the molten salt (NaF) was hardly adhered except for the portion close to the disaster. The ruthenium was sampled during the first to sixth experiments, and the main impurity concentrations in the ruthenium obtained were as follows. 2nd time: boron (B): 4.7ppm, structure (P): 19ppm, iron (Fe): 200ppm, titanium (Ti) 34ppm, Ming (Al): 5.5ppm, feed (Ca): 2.5ppm, nano ( Na): 9.4ppm 4th: Boron (B): 2.1ppm, Dendrobium (P): 17ppm, Iron (Fe): 200ppm, Titanium (Ti) 33ppm, | Lu (Al): 2.1ppm, i bow ( Ca) : 1.7ppm, nano (Na): 19ppm 6th: boron (B): l.Oppm, filled (P): 18ppm, iron (Fe): 190ppm, titanium (Ti) 34ppm, |g(Al) : l.Oppm, feed (Ca): 1.2ppm, nano (Na): 100147271 39 201231392 15ppm The sixth time (the total input of NaF is 3kg), the boron is reduced to about 10% of the original raw material, and with aluminum, The calcium is greatly reduced together, and the sodium concentration is also sufficiently reduced to the extent that it can be removed in the subsequent process. Further, if the process is continued, the boron concentration can be lowered. (Example 2) Except that as shown in Fig. 2, the gas injection tube 25 was added to the molten crucible, and the addition of the argon gas "thin salt" was carried out three times per 5 kg. 1 Experiment under the same conditions. The argon gas system was set to be continuously blown in at 500 ccm in the experiment. The same as in Example 1 'The inside of the can 13 was observed after the experiment, and as a result, almost no evaporate of molten salt (NaF) was attached except for the portion close to the crucible. Among them, NaF is attached to a part of the argon blowing pipe. It is believed that NaF is cooled in a portion of the argon blowing tube when the molten salt is removed by evaporation. The third time (the total input of NaF is 1.5kg), the main impurity concentration in the obtained Shixi is boron (B): 1.8ppm, phosphorus (P): 16ppm, iron (Fe): 250ppm, titanium (Ti) 38ppm, Shao (Al): 1.2ppm, mother (Ca): 1.8ppm 'Sodium (Na): 6.2ppm, boron, aluminum, calcium are reduced together, and the sodium concentration is also sufficiently reduced to the extent that it can be removed in the subsequent process. . (Comparative Example 1) In Fig. 1, the tube 13 was not provided above the crucible 3, and the same experiment was carried out in the form of opening above the crucible 3. In this case, since the evaporation of the molten salt (NaF) 100147271 40 201231392 is intense, the addition of the slaked salt is set to twice (lkg) per embodiment and is carried out three times. The third time (the total input of NaF is 3kg), the main impurity concentration in the obtained Shixi is boron (B): 3.3ppm, phosphorus (P): 14ppm, iron (Fe): 86ppm, titanium (Ti) 41ppm Aluminum (Al): 4.4 ppm, calcium (Ca): 2.1 ppm, sodium (Na): 33 ppm. Although aluminum and calcium are reduced, although NaF is added, boron is only reduced to 30 °/ of the original raw material. Left and right, it is not enough. It can be seen that NaF, which does not participate in the reaction and directly evaporates, exists in a large amount. Further, the impurity concentration of NaF used in the present embodiment was boron (B): 0.5 ppm, and filled (P): 1.2 ppm. As is clear from the results of Examples 1 and 2 and Comparative Example, the evaporate obtained by evaporating the molten salt containing impurities is condensed into a condensate by means of condensation, and the condensate can be reused as a molten salt to reduce the amount of the condensate. The amount of molten salt used is effectively purified by hydrazine. (Examples 3 to 6) Experiments were carried out in the same manner as in Example 1 except that the amount of NaF added to the molten crucible, the number of times of addition of NaF, and the treatment time (time of holding the cylinder 13) were set to the conditions shown in Table 1. In Table 1, the "condensation means" is "present", which means that the cylinder 13 is provided above the crucible 3. Further, the phrase "removal of the condensate by the condensing means" means "none", which means that the same cylinder 13 is used for the treatment. (Examples 7 to 13) The same procedure as in Example 1 except that the amount of NaF added to the molten crucible, the number of times of NaF addition, and the time between the treatments of 100147271 41 201231392 (the time of holding the cylinder 13) were as shown in Table 1. conduct experiment. In the table, "removal of condensate by condensation means" means "present" means that the cylinder 13 is exchanged for the tube 13 to which no condensate is attached during the treatment. Regarding Example 7, the 5G () gNaF addition force σ (addition amount is 1% by weight relative to Si) was carried out for 6 times, and was kept for i hours. The exchange of the cartridge 13 in Example 7 was carried out 1 hour after the start of the treatment. In Example 8 to 丨〇, the amount of NaF added in the first time was 5 〇〇g, and after the second time, 25 〇g was added each time, and 丨 was added for 5 hours each time. In the eighth to tenth embodiments, the exchange of the cartridge 13 was the same as in the seventh embodiment, and it was carried out 1 hour after the start of the treatment. In the examples 11 to 13, the amount of NaF added in the first time was 500 g, and 200 g was added each time after the second time, and the addition was maintained for several hours. The exchange of the canister 13 is the same as in the embodiment, and is carried out after a lapse of several hours from the start of the treatment. (Comparative Examples 2 to 4) Experiments were carried out in the same manner as in Comparative Example, except that the amount of NaF added to the molten crucible, the number of times of NaF addition, and the treatment time were as shown in Table 1. The impurity concentration in the crucibles of Examples 3 to 13 and Comparative Examples 2 to 4, the boron (B) residual ratio in the crucible, and the yield are shown in Table 1. Further, in Table 1, "the butterfly (b) residual ratio" refers to the concentration ratio at the time of measurement of the initial concentration of boron. Further, the "yield" means the ratio (%) of the amount of niobium cast (recovered) to the amount of niobium dissolved. 100147271 42 201231392

【II α η 夺 ,1〇 Ο — 寸一 〇 cn 0.4 210 S_ 63 4200 63 4200 63 4200 <0.1 450 <0.1 4000 ! <0.1 52 寸· OO 〇 CN On Ο Ο^ί m cn ο <ό (〇 PL, Ο 〇 〇 1-H CS ο ο CO '―'CN 190 220 Ο ο σ\ 00 —CN 110 200 720 1100 720 1100 720 1100 2; s Ο 〇 寸(N Τ—^ ί-Η 140 210 Ο ο 寸m τ—· CO Ο Ο νο寸 —CO ο ο in in ' CN P CN CO cn co CN寸 cn co <Ν寸 mm cn α\ cn co 〇\ r«H i—l ΓΟ Ο Os in ο vo 〇\ ^Τ) ο σ\ 寸ν〇 CN '~H 寸α CN CN v〇 σ\ cn 〇\ (Ν寸 寸ΟΟ (N cn C3 U 寸N 寸^ ^ tT) 卜, o寸· ^―' m \〇寸· 一 m ^ cn in csj ^r) m cn CN v〇 »—1 r- r- CN rn CO r-H οο in i—ί 220 5.1 (N <^> <N — O v〇 PI〇 59 <0.1 v〇 O Ό ο ^ ΓΟ ν〇 Ο ^ ΓΟ 97 1 260 r^. m rn 卜<N On ^ 2 cn CN Ο -Η CN 240 1.2 *〇寸 ο ο VO m o o v〇 CN o c5 V〇 00 O CN <0.1 <0.1 oq vq ' 〇 οο 一 c5 οο ν〇 ^Η* Ο 寸(N 〇 〇 寸v〇 〇 〇 寸寸 O cn 1—η r-H ^r Ο ο 卜卜 Ο ο (¾ ν〇 1—Η r-H i-H v〇 v〇 T"H r·^ O寸 (T) 〇〇 »n 〇s CO 〇> Ό in —0*Ν iT) i〇 !λ ?! O CN t-H O cn I-H i—H O <N —CN 寸00 ο 〇\ »-Η CO 1-Η ι—Η PQ οο ^ ΙΤ) ―卜· 1—1 CO —寸 '<N —CO· ^ 〇 On寸 v〇 d oo m oo οο cn od 00 CO 00 ^ <N寸 S in (N寸 CN CM »—1 o 〇) —寸 ^ cn ^ <Ν 〇 oq ' 1-Η 產率(%) II 1 1 II IS 1 ? II 1 1 丨汔 II II 丨汔 IP I 00 1 οο 1 Γ-It— 1茨 δ 鉍 卽 〇 m r—^ O VO §^2 Ο ΟΟ r*H 鉍 & §2 m·!, W τ ο m o ο σ\ 〇 22 O v〇 o 一 O寸 O v〇 O un Ο νο Ο νο NaF添 加次數 1-Η CN m v〇 v〇 cr\ ν〇 寸 Ό r-H 相對於Si之 NaF ▲加量(%) ! 卜 m m 〇 〇 cn m 卜 P; ο r—Η Ο !$ if #. 1 1 I 冷凝手段 #- 實施例3 1 實施例4 實施例5 _i 實施例6 實施例7 實施例8 實施例9 實施例10 實施例11 實施例12 實施例13 比較例2 比較例3 比較例4[II α η 夺 , 1 〇Ο — 寸 〇 0.4 0.4 210 S_ 63 4200 63 4200 63 4200 <0.1 450 <0.1 4000 ! <0.1 52 inch · OO 〇CN On Ο Ο^ί m cn ο ;ό(〇PL, Ο 〇〇1-H CS ο ο CO '―'CN 190 220 Ο ο σ\ 00 —CN 110 200 720 1100 720 1100 720 1100 2; s Ο 〇 inch (N Τ—^ ί- Η 140 210 Ο ο m m τ—· CO Ο Ο νο inch—CO ο ο in in ' CN P CN CO cn co CN inchcn co <Ν寸mm cn α\ cn co 〇\ r«H i—l ΓΟ Ο Os in ο vo 〇\ ^Τ) ο σ\ 寸ν〇CN '~H inch α CN CN v〇σ\ cn 〇\ (Ν ΟΟ inchΟΟ (N cn C3 U inch N inch ^ ^ tT) o inch·^―' m \〇寸·一 m ^ cn in csj ^r) m cn CN v〇»—1 r- r- CN rn CO rH οο in i—ί 220 5.1 (N <^><N — O v〇PI〇59 <0.1 v〇O Ό ο ^ ΓΟ ν〇Ο ^ ΓΟ 97 1 260 r^. m rn 卜<N On ^ 2 cn CN Ο -Η CN 240 1.2 *〇 Inch ο ο VO moov〇CN o c5 V〇00 O CN <0.1 <0.1 oq vq ' 〇οο a c5 οο ν〇^Η* Ο inch (N 〇〇 inch v〇〇〇 inch inch O cn 1—η rH ^r Ο卜卜Ο ο (3⁄4 ν〇1—Η rH iH v〇v〇T"H r·^ O inch(T) 〇〇»n 〇s CO 〇> Ό in —0*Ν iT) i〇!λ ?! O CN tH O cn IH i-HO <N - CN 00 ο 〇 \ »-Η CO 1-Η ι—Η PQ οο ^ ΙΤ) ―卜·1—1 CO—inch'<N — CO· ^ 〇On inch v〇d oo m oo οο cn od 00 CO 00 ^ <N inch S in (N inch CN CM »—1 o 〇) — inch ^ cn ^ <Ν 〇oq ' 1-Η Yield (%) II 1 1 II IS 1 ? II 1 1 丨汔II II 丨汔IP I 00 1 οο 1 Γ-It-1 δ 铋卽〇mr—^ O VO §^2 Ο ΟΟ r*H铋& §2 m·!, W τ ο mo ο σ\ 〇22 O v〇o One O inch O v〇O un Ο νο Ο νο NaF added times 1-Η CN mv〇v〇cr\ ν〇 inch Ό rH NaF with respect to Si ▲ addition amount (%) ! 卜 mm 〇〇cn m 卜 P; ο r - Η Ο ! $ if #. 1 1 I condensing means # - Example 3 1 Example 4 Example 5 _i Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Comparative Example 2 Comparative Example 3 Comparative Example 4

ε 寸 U3A-00I 201231392 旦:十對實”彳3〜13、比較例2〜4 ’以相對於Si之NaF添加 里(/。)作為㈣,錢理後之㈣之硼⑻殘存率⑽作為縱 轴’所 '纟會出之圖表示於表5。 ▲圖5所7Γ可知使用冷凝手段進行處理的實施例3〜η, 相較於未使科財段而進行纽的比_ 2 —,其石夕中之 ()殘存率心低。又’將附著於冷凝手段之冷凝物於處理 中去除的實關8〜13’係相較於未由冷凝手段去除冷凝物 而進仃處理的貫施例3〜6,其可依更高效率進行碎精製。 針對實施例3〜7、實施例u〜13、比較例2〜4,以處理時 間(小時)作為松轴,以處理後之石夕中之蝴⑼殘存率(% 縱轴’所繪出之圖表示於表6。 … 如圖6所示’可知使用冷凝手段進行處理的實施例3〜13, 相較於未使科凝手段而騎處理的比㈣2〜心可依短時 間減財中之_)殘存率。又’將附著於冷凝手段之冷凝 物於處理中去除的實施例7〜13,係相較於未由冷凝手段去 除冷凝物而進行處理的實施例3〜6,其可依更高效率進行矽 針對實施例3〜13,以處理時間(小時)作為橫軸,以處理後 之矽中之硼(B)殘存率(%)作為縱軸,所繪出之圖表示於表7。 如圖7所示,可知將附著於冷凝手段之冷凝物於處理中去 除的實施例8〜1G ’係相較於未由冷凝手段去除冷凝物而進 仃處理的實施例3〜6,其可依更高效率進行矽精製。 100147271 44 201231392 由實施例3〜13及比較例2〜4的結果可知,除了使含有雜 質之熔融鹽蒸發成為蒸發物,並藉冷凝手段使其冷凝為冷凝 物的步驟以外’藉由進一步經過將附著於冷凝手段之冷凝物 由冷凝手段予以去除的步驟,則可依更高效率進行矽精製。 以上,藉目前最具有實踐性且較佳之實施形態說明本發 明,但本發明並秘定於本案說明書_賴*之實施形態, 在不違反申請專職圍及由說明書整體所讀取之發明要\ 或思想的範圍内’可予以適當變更,而伴隨此種變更之石夕: 製造方法及製造m日日圓以及太陽電池用面板亦涵括於 本發明之技術範圍内。 以上雖使用特定之態樣詳細說明本發明,但本領域從_ 當知’在不脫縣發明之4圖_圍之下可進行各種變^ 變形。又,本案係根據2_年12月2〇日申請之日本專矛 申请案(特願2_·2咖〇),將其整體内容援用於此。 (產業上之可利用性) 由本發明之矽之製造方法ε Inch U3A-00I 201231392 Dan: Ten pairs of real "彳3~13, Comparative Example 2~4" are added to NaF relative to Si (/.) as (4), and after (4) boron (8) residual rate (10) The vertical axis 'means' will be shown in Table 5. ▲ Figure 5 shows that Example 3 to η, which is processed by means of condensation, is compared with the ratio of _ 2 - The residual rate of the stone in the middle of the stone is low. In addition, 'the real off 8~13' which removes the condensate attached to the condensing means during the treatment is compared with the condensate which is not removed by the condensing means. Examples 3 to 6, which can be crushed and purified according to higher efficiency. For Examples 3 to 7, Examples u to 13, and Comparative Examples 2 to 4, the treatment time (hour) was taken as the loose axis to treat the stone. The butterfly in the evening (9) Residual rate (% plotted on the vertical axis ' is shown in Table 6. ... as shown in Figure 6] Examples 3 to 13 treated using condensation means, compared to the method of not using coagulation And the ratio of riding treatment (four) 2 ~ heart can be reduced in the short-term _) residual rate. And 'the condensate attached to the condensation means removed in the treatment Examples 7 to 13 are Examples 3 to 6 which are treated in comparison with the condensate removal by condensation means, which can be carried out with higher efficiency for Examples 3 to 13 and treatment time (hours) as the horizontal axis. The residual ratio (%) of boron (B) in the treated crucible is taken as the vertical axis, and the plotted graph is shown in Table 7. As shown in Fig. 7, it is known that the condensate attached to the condensation means is removed in the treatment. Examples 8 to 1G were compared with Examples 3 to 6 which were not subjected to condensate removal by condensation, and were subjected to hydrazine purification according to higher efficiency. 100147271 44 201231392 From Examples 3 to 13 and comparison As a result of Examples 2 to 4, it is understood that, except for the step of evaporating the molten salt containing impurities into an evaporate and condensing it into a condensate by condensation means, by further passing the condensate attached to the condensing means by condensation means In the step of removing, the enthalpy refining can be carried out according to a higher efficiency. The present invention has been described above by way of the most practical and preferred embodiments, but the present invention is not limited to the embodiment of the present specification. Application The invention may be appropriately changed within the scope of the invention or the scope of the invention as described in the entire specification, and the manufacturing method and the manufacture of the m-day yen and the solar cell panel are also included in the present invention. In the above technical scope, the present invention will be described in detail with reference to specific aspects, but it is known in the art that various modifications can be made in the context of the invention. _ The application for the Japanese special spear application (Special Wish 2_·2 Curry) applied for on December 2nd of the year, the entire contents of which are applied to this. (Industrial Applicability) Manufacturing method of the present invention

ΛΛ 夕,可作為例如MU 太陽电池用面板的材料使用。 【圖式簡單說明】 圖1為表_實施树明切之製造方 一例的概略圖。 展k 4置之 圖2為表示可實施本發明 一例的概略圖。 之矽之製造方法的製造裝 置之 100147271 201231392 圖3為表示可實施本發明之矽之製造方法的製造裝置之 一例.的概略圖。 圖4為表示可實施本發明之矽之製造方法的製造裝置之 一例的概略圖。 圖5係以相對於Si之NaF添加量(%)作為橫軸,以處理後 之矽中之硼(B)殘存率(%)作為縱軸所繪出的圖表。 圖6係以處理時間(小時)作為橫軸,以處理後之矽中之硼 (B)殘存率(%)作為縱軸所繪出的圖表。 圖7係以處理時間(小時)作為橫軸,以處理後之矽中之硼 (B)殘存率(%)作為縱軸所繪出的圖表。 【主要元件符號說明】 1 熔融矽 2 熔融鹽 3 坩堝 4 線圈 6 原材料投入口(投入管) 7 框體 8 斷熱材 9 鑄模 10 支撐台 11 氣體導入口 12 排氣口 100147271 46 201231392 13 筒 14 間隙 25 氣體吹入管 33 板 40 吸引手段 100 、 200 、 300、400矽之製造裝置 100147271 47It can be used as a material for a panel for MU solar cells, for example. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an example of a manufacturing method of a table_implementation tree. Fig. 2 is a schematic view showing an example in which the present invention can be implemented. The manufacturing apparatus of the manufacturing method of the present invention 100147271 201231392 Fig. 3 is a schematic view showing an example of a manufacturing apparatus capable of implementing the manufacturing method of the present invention. Fig. 4 is a schematic view showing an example of a manufacturing apparatus capable of implementing the manufacturing method of the present invention. Fig. 5 is a graph in which the amount (%) of NaF added to Si is plotted on the horizontal axis and the residual ratio (%) of boron (B) in the treated crucible is plotted on the vertical axis. Fig. 6 is a graph in which the treatment time (hour) is taken as the horizontal axis, and the residual ratio (%) of boron (B) in the treated crucible is plotted on the vertical axis. Fig. 7 is a graph in which the treatment time (hour) is taken as the horizontal axis, and the residual ratio (%) of boron (B) in the treated crucible is plotted on the vertical axis. [Explanation of main component symbols] 1 Melting 矽 2 Molten salt 3 坩埚 4 Coil 6 Raw material input port (input pipe) 7 Frame 8 Heat-dissipating material 9 Mold 10 Support table 11 Gas introduction port 12 Vent port 100147271 46 201231392 13 Tube 14 Gap 25 gas blowing pipe 33 plate 40 suction device 100, 200, 300, 400 矽 manufacturing device 100147271 47

Claims (1)

201231392 七、申請專利範圍: 卜種歡製造方法,其特徵為,使含有雜f之炫融石夕與 ^孤接觸’並使含有該雜質之溶融鹽蒸發而作為蒸發物, 藉此由該熔融矽去除該雜質; 藉冷凝手段使該蒸發物冷凝而作為冷凝物。 2.如申請專利_第丨項之歡製造方法,其中,將上述 冷凝物作為熔融鹽使用。 ^ 3·如申請專利範圍第1或2項之♦之製造方法,其中,使 上述冷凝物由冷凝手段落下,使冷凝物中线融鹽無融石夕 接觸。 4. 如申請專利範圍第丨至3項中任一項之矽之製造方法, 其中’將附著於上述冷凝手段之冷凝物由冷凝手段去除。 5. 如申凊專利範圍第1至4項中任一項之矽之製造方法, 其中’藉由交換上述冷凝手段,將附著於冷凝手段之冷凝物 由冷凝手段去除。 6. 如申請專利範圍第1至5項中任一項之矽之製造方法, 其中’上述冷凝手段係藉由將上述蒸發物冷卻使其冷凝而作 為冷凝物’且為設於系統内上部之冷卻手段。 7. 如申請專利範圍第1至6項中任一項之矽之製造方法, 其中’將上述冷凝物之溫度設為上述熔融鹽融點以下使其固 化而作為凝固物。 8. 如申請專利範圍第1至7項中任一項之矽之製造方法, 100147271 48 201231392 使上述熔融鹽蒸發去除 其中,將上述雜質由熔融矽去除後 至系統外。 且9中如圍第1至8項中任—項之歡製造方法, ,、中;上述熔融矽中吹入惰性氣體。 10.如申請專利範圍第!至9項中任1之 法’其中’上述雜質中包括· 如申請專利範圍第i至10項中任一項之矽之製造方 法,其中’上述炫融鹽係包括從由含有驗金屬與較之複合 皿及3有鹼土知金屬與自素之複合鹽所組成群選出之至小 一種化合物。 夕 12. 如申請專利範圍第!至u項中任一項之石夕之製造方 法,其中,上述熔融鹽係包括從由氟化鋰(UF)、氟化鈉 (NaF)、氟化鉀(KF)、氟化敛、氟化铯(CsF”矽氣化鈉 (NajiF6)、冰晶石、氟化鈉與氟化鋇之混合物、及 氟化鈉與氟化鋇與氣化鋇的混合物、以及此等之混合物所矣 成群選出之至少一種化合物。 13. 如申請專利範圍第丨至12項中任一項之矽之製造方 法,其中,上述熔融鹽之量,係相對於熔融矽,為5質量^ 以上且300質量。/。以下。 〇 14·一種矽之製造裝置,係使含有雜質之熔融矽與熔融皡 接觸,使含有該雜質之熔融鹽蒸發為蒸發物,藉此由讀熔= 矽去除該雜質者,其具備: 100147271 49 201231392 合益’其具有底部、侧部與上部開口*,填充上述含有雜 質之熔融矽與上述熔融鹽; ’ 加熱手段,對上述含有雜質之炼融石夕與上述炫融鹽進行加 熱; 冷凝手段,設於上述容器之上述上部開Π部更上方,使上 述蒸發物冷凝為冷凝物;及 排出手段’藉由與上述炫融鹽之反應,將由上述溶融石夕所 去除之上述雜質排出。 15. 如申請專利範圍帛14項之石夕之製造裝置,纟中,進— 步具備用以對上述容器添加熔融鹽之手段。 16. 士申專利範圍第14或15項之#之製造裝置,其中, 進一步具備將上述冷凝物作紐㈣再之手段/、 置’ a中專1把圍第14至16項中任一項之矽之製造裝 物嫩上述冷凝物 18. 如申請專利範圍笛 置,其中,上、至17項中任—項之%之製造裝 ”凝手段係具有㈣統内之上下方向延伸存 在的側壁、且上邱R A 甲存 19. 如申請專利範圍二成為開°部之中空筒狀體。 ,^ _ 圍第18項之矽之製造裝置,其中,於上 ㈣狀體之内·有分隔構材。 、 20. 如申請專利範圍 置,其—·手段係具有朝=== 100147271 201231392 在的側壁、下部形成為開口部且上部封閉之筒狀體。 21.如申請專利範圍第14至17項中任一項之矽之製造裝 置,其中,上述冷凝手段係朝與系統之上下方向呈交叉之方 向延伸存在之板狀體。 , 22.如申請專利範圍第14至21項中任一項之矽之製造裝 . 置,其中,上述冷凝手段係藉由將上述蒸發物冷卻使其冷凝 而作為冷凝物之冷卻手段。 23. 如申請專利範圍第14至22項中任一項之矽之製造裝 置,其中,上述容器係由石墨或碳化矽所構成。 24. 如申請專利範圍第14至23項中任一項之矽之製造裝 置,其中,進一步具備用以吸引上述蒸發物之吸引手段。 25. 如申請專利範圍第14至24項中任一項之矽之製造裝 置,其中,進一步具備用於回收上述蒸發物之回收手段。 26. 如申請專利範圍第25項之矽之製造裝置,其中,上述 回收手段係旋風器、袋濾器或濕式捕集手段之任一種。 27. —種矽晶圓,其含有藉由申請專利範圍第1至13項中 任一項之矽之製造方法所獲得之矽。 28. —種太陽電池用面板,其含有藉由申請專利範圍第1 至13項中任一項之矽之製造方法所獲得到之矽。 100147271 51201231392 VII. Patent application scope: A method for manufacturing a cultivar, which is characterized in that a smelting stone containing a heterofluorene is contacted with a solute and a molten salt containing the impurity is evaporated as an evaporating substance, whereby the melting The enthalpy removes the impurities; the condensate is condensed by condensation means as a condensate. 2. The method of producing a _ 之 之 之 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The manufacturing method according to the first or second aspect of the invention, wherein the condensate is dropped by the condensing means, so that the condensed liquid is melted in contact with the salt. 4. The manufacturing method according to any one of claims 1-3, wherein the condensate attached to the above condensation means is removed by condensation. 5. The manufacturing method according to any one of claims 1 to 4, wherein the condensate adhering to the condensing means is removed by the condensing means by exchanging the above condensing means. 6. The manufacturing method according to any one of claims 1 to 5, wherein the above-mentioned condensing means is condensed by cooling the evaporant as a condensate and is disposed in an upper portion of the system. Cooling means. 7. The manufacturing method according to any one of claims 1 to 6, wherein the temperature of the condensate is set to be less than or equal to the melting point of the molten salt to be solidified. 8. The manufacturing method according to any one of claims 1 to 7, 100147271 48 201231392 to remove the above molten salt, wherein the impurities are removed from the molten enthalpy and then to the outside of the system. And in the case of 9th, the manufacturing method of any of the items 1 to 8 is in the middle, and the inert gas is blown into the melting enthalpy. 10. If you apply for a patent scope! The method of any one of the above-mentioned items, wherein the above-mentioned impurity includes: a manufacturing method according to any one of the claims 1 to 10, wherein the above-mentioned dazzling salt system comprises a metal-containing test and a comparison The composite dish and the mixture of 3 alkaline earth metals and self-complexed salts are selected to a small compound. Xixia 12. If you apply for a patent scope! The method for producing a stone according to any one of the items, wherein the molten salt comprises from lithium fluoride (UF), sodium fluoride (NaF), potassium fluoride (KF), fluoride condensation, and fluorination.铯(CsF) 矽 gasified sodium (NajiF6), cryolite, a mixture of sodium fluoride and cesium fluoride, and a mixture of sodium fluoride and cesium fluoride and gasified ruthenium, and mixtures thereof The method for producing a crucible according to any one of the preceding claims, wherein the amount of the molten salt is 5 masses or more and 300 masses with respect to the melting enthalpy. 〇14. A manufacturing apparatus for a crucible, in which a molten crucible containing impurities is brought into contact with a molten crucible, and a molten salt containing the impurity is evaporated into an evaporate, thereby removing the impurity by reading melt = ,, which is provided : 100147271 49 201231392 Heyi' has a bottom portion, a side portion and an upper opening *, and fills the above-mentioned molten crucible containing impurities and the above molten salt; 'heating means, heating the above-mentioned impurity-containing molten stone and the above-mentioned molten salt Condensing means provided in the above container Above the upper opening portion, the evaporating substance is condensed into condensate; and the discharging means 'discharges the impurities removed by the molten stone by the reaction with the above-mentioned molten salt. 15. Scope of application 帛In the manufacturing apparatus of the 14th item, the manufacturing apparatus of the above-mentioned container is provided with the means for adding the molten salt to the above-mentioned container. The condensate is used as a means of reversing the condensate of the manufacturing equipment of any one of items 14 to 16 in the middle of the condensate. The manufacturing equipment of the “parts of the 17th item” has a side wall extending in the upper and lower directions of the system, and the upper side of the RA is in the form of a hollow cylindrical body. , ^ _ The manufacturing device of the 18th item, in which there is a partition member within the upper (four) shape. 20. If the scope of the patent application is set, the means--the means has the direction === 100147271 201231392 Formed on the side wall and lower part A manufacturing apparatus according to any one of claims 14 to 17, wherein the condensing means extends in a direction intersecting the upper and lower directions of the system. The manufacturing apparatus according to any one of claims 14 to 21, wherein the condensing means is cooled by condensing the evaporant by cooling it A manufacturing apparatus according to any one of claims 14 to 22, wherein the container is made of graphite or tantalum carbide. 24. The manufacturing apparatus according to any one of claims 14 to 23, further comprising a suction means for attracting the evaporating substance. The manufacturing apparatus according to any one of claims 14 to 24, further comprising means for recovering the evaporating material. 26. The manufacturing apparatus of claim 25, wherein the recovery means is any one of a cyclone, a bag filter, or a wet trapping means. 27. A crucible wafer comprising the crucible obtained by the manufacturing method of any one of claims 1 to 13. 28. A panel for a solar cell, which comprises the method of manufacturing according to any one of claims 1 to 13. 100147271 51
TW100147271A 2010-12-20 2011-12-20 Manufacturing method and apparatus of silicon, silicon wafer, and panel for solar cell TW201231392A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010283210 2010-12-20

Publications (1)

Publication Number Publication Date
TW201231392A true TW201231392A (en) 2012-08-01

Family

ID=46313816

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100147271A TW201231392A (en) 2010-12-20 2011-12-20 Manufacturing method and apparatus of silicon, silicon wafer, and panel for solar cell

Country Status (3)

Country Link
JP (1) JPWO2012086544A1 (en)
TW (1) TW201231392A (en)
WO (1) WO2012086544A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11052348B2 (en) 2017-12-07 2021-07-06 Industrial Technology Research Institute Method for removing boron

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MA46932A (en) 2015-10-09 2019-10-09 Milwaukee Silicon Llc PURIFIED SILICON, DEVICES AND SYSTEMS ENABLING ITS PRODUCTION
KR101871580B1 (en) * 2016-07-15 2018-06-27 두산중공업 주식회사 Treatment Method of Polysilicon Sludge
KR101902745B1 (en) * 2018-06-15 2018-09-28 두산중공업 주식회사 Treatment Method of Polysilicon Sludge
JP7172790B2 (en) * 2019-03-26 2022-11-16 Agc株式会社 Method for producing chemically strengthened glass, molten salt composition, and method for extending life of molten salt composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
EP0166482A3 (en) * 1984-06-26 1988-11-23 AGIP S.p.A. Improved process for recovering metals from the corresponding metal halides
JP4722403B2 (en) * 2004-02-20 2011-07-13 新日鉄マテリアルズ株式会社 Silicon purification apparatus and silicon purification method
CN101588992A (en) * 2006-09-29 2009-11-25 信越化学工业株式会社 Method for purification of silicon, silicon, and solar cell
JP2010052960A (en) * 2008-08-26 2010-03-11 Shin-Etsu Chemical Co Ltd Method for production of high-purity silicon, production apparatus, and high-purity silicon
JP2010269959A (en) * 2009-05-20 2010-12-02 Sharp Corp Apparatus and method of refinement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11052348B2 (en) 2017-12-07 2021-07-06 Industrial Technology Research Institute Method for removing boron
US11541351B2 (en) 2017-12-07 2023-01-03 Industrial Technology Research Institute Apparatus for removing boron

Also Published As

Publication number Publication date
WO2012086544A1 (en) 2012-06-28
JPWO2012086544A1 (en) 2014-05-22

Similar Documents

Publication Publication Date Title
WO2003066523A1 (en) Silicon purifying method, slag for purifying silicon, and purified silicon
CN101263235B (en) Process for the production of germanium by reduction of GeCl4 in a liquid metal
TW201231392A (en) Manufacturing method and apparatus of silicon, silicon wafer, and panel for solar cell
BR112019005038B1 (en) A METHOD TO PRODUCE TITANIUM-ALUMINUM-VANADIUM ALLOY
JP5768714B2 (en) Method for producing silicon
JPWO2013018710A1 (en) Recovery method of rare earth elements
TW201008874A (en) Method of manufacturing silicon with high purity
JP6088250B2 (en) Method for recovering lead from lead-containing glass
JP2006282497A (en) Method for producing high purity silicon
JP4436904B2 (en) Si manufacturing method
JP2004284935A (en) Apparatus and method for manufacturing silicon
TW201210939A (en) Method for refining aluminum-containing silicon
CN109110789B (en) Method for preparing beryllium fluoride and method for preparing ultra-pure metallic beryllium
WO2006098199A1 (en) Method of high-melting-point metal separation and recovery
JP2013249235A (en) Method for producing fluoride salts, and fluoride salts, and method for producing silicon using the fluoride salts
JP2005255417A (en) Method for purifying silicon
RU2539593C1 (en) Electrochemical method of obtaining of powder of calcium hexaboride
US4992096A (en) Metallothermic reduction or rare earth metals
JP2013212962A (en) Method for producing silicon, silicon wafer and panel for solar cell
JP5910251B2 (en) Silicon manufacturing method, silicon wafer and solar cell panel
JP4020226B2 (en) Semiconductor scrap decomposition method
JP2006274340A (en) METHOD FOR PRODUCING Ti OR Ti ALLOY
JP2013086995A (en) Method and apparatus for producing silicon, silicon wafer and panel for solar cell
JP2013086994A (en) Method for producing silicon, silicon wafer and panel for solar cell
JP6307180B2 (en) Method for recovering lead from lead-containing glass