TW200845432A - Manufacturing method of light emitting diode substrate - Google Patents

Manufacturing method of light emitting diode substrate Download PDF

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Publication number
TW200845432A
TW200845432A TW097107645A TW97107645A TW200845432A TW 200845432 A TW200845432 A TW 200845432A TW 097107645 A TW097107645 A TW 097107645A TW 97107645 A TW97107645 A TW 97107645A TW 200845432 A TW200845432 A TW 200845432A
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Taiwan
Prior art keywords
emitting diode
light
conductive paste
substrate
manufacturing
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TW097107645A
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Chinese (zh)
Inventor
Kiyoshi Iwai
Hisatoshi Murakami
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Tatsuta System Electronics Co Ltd
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Publication of TW200845432A publication Critical patent/TW200845432A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

This invention discloses a fabrication method of LED substrate, which is applied to enhancing brightness of LCD without adhesion process using adhesive, and is able to precisely form reflection portion having expected shape and size with low cost. The fabrication method comprises steps as follows: coating conductive paste onto substrate surface disposed with loop; heating and solidifying the conductive paste; perforating solidified conductive paste via drill with top part of conical table shape in position arranged with the LCD, so as to form space comprising tapered side wall face which is regarded as reflection portion.

Description

200845432 九、發明說明： 【發明所屬^技術領域】 發明領域 本發明係有關於-種具有以發光二極體之高亮度化為 5目的之反射部的發光二極體基板之製造方法。 L· j 發明背景BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light-emitting diode substrate having a reflecting portion having a high luminance of 5 for a light-emitting diode. L· j invention background

10 1510 15

20 士以彺，在以發光二極體之高亮度化為目的而設置反射 部時，為了形成該反射部，一般會使用下述方法，即：如專利文獻1所揭示，將例如聚碳酸6旨之耐熱性工程塑膠樹脂 料材枓，且藉由射出成形、炼融成形、押出成形等形成 ，疋形狀之反射構件，並於無電鑛鎳⑽後進行鍍銀(Ag) 处理铁再It由接著_其接著於敢之發光二鋪基板上。 且…、而，則述方法在形成反射構件時必須要有高價之模 ^再者，直到形成反射部前必須要有數段之程序，會具 有需要相當之時間與成本之問題。 曰/、 又，所得到之反射部會因用以接著反射構件之接著劑 屬而產生反射光之損耗。 、:b本I明之發明人係揭示—種藉由於基板上直接 =導電性糊劑而形成所期望之形狀之反射部且無需接著 :者(專利文獻2)，相較於前述習知方法，該方法係具有 σ巾田地間化製造料並肖m製造成本之優點。 然而，於該方法中，反射部之形狀或尺寸之再現性稍 -’问時並不適合於絲高精度時。 5 200845432 〔專利文獻1〕日本專利公開公報特開平9_81055號公 報 〔專利文獻2〕特願2007 —20075號說明書 【潑^明内容】 5 發明之揭示 發明所欲解決之課題 本發明係有鑑於前述問題，目的在提供一種發光二極 體基板之製造方法，該發光二極體基板之製造方法無需利 用接著d之接著程序，同時可藉由高精度且低成本形成具 10有所期王之傾斜角度之反射面及所期望之尺寸之反射部。 解決課題之手段 本奄明之製造方法係一種具有用以使發光二極體高亮 度化之反射部的發光二極體基板之製造方法，又，為了達 成刖述目的’於業已形成電路之基板表面塗布導電性糊 ^並加熱邊導電性糊劑而使其硬化，且於配置發光二極 ^ /3-.娶 | ，藉由具有截頭錐狀之前端部之鑽頭將前述業 已硬化之導電性糊劑穿孔，形成具有構成反射部之錐狀側 壁面之空間。 於蝻述製造方法中，宜藉由電鍍於反射部之表面進行 2〇 鍍銀或錢鎳。 、'、黾〖生糊弹丨宜使用含有熱硬化性樹脂、硬化劑及金屬 ，料之熱傳導性糊劑，特別是宜使用相對於環氧樹脂100重 7 乂1·^重量份〜重量份之比例含有味唾系硬化劑、 及以400重量份叫獅重量份之比例含有選自於由銅粉及 6 200845432 鍛銀銅粉所構成之群中之1種或2種以上之金屬填料形成的 導電性糊劑。 發明之效果 依據本發明之製造方法，如前所述，於發光二極體基 5板上塗布導電性糊劑並使其硬化後，藉由進行鑽頭加工， 而可利用高精度形成具有所期望之傾斜角度及尺寸之反射 部’且無需利用接著劑之接著程序，因此可簡化製造程序， 又，由於亦無需模具，因此亦可大幅地降低成本。 又’如前所述，由於係使用導電性糊劑，因此可使用 10電鍍直接鍍銀或鍵鎳，於該方面亦可簡化程序。 【實施方式】 發明之較佳實施形態 以下利用圖式詳細說明本發明之製造方法，然而，在 此所示之基板結構或形狀為一例子，本發明並非限定於此。 15 第1及2圖係顯示依據本發明之反射部之形成例的放大 模式截面圖，第1(a)圖係顯示糊劑塗布前之完成電路形成之 基板，第1(b)圖係顯示業已於第1(a)圖所示之基板上塗布導 電性糊劑者，第1(C)圖係顯示於第1(b)圖所示業已塗布糊劑 之基板上在糊劑硬化後藉由鑽頭進行穿孔之狀態，又，第2 20圖係顯示於第，利用鑽頭穿孔後之糊劑硬化物表面形成 鍍層（銀鍍層或鎳鍍層)並安裝發光二極體晶粒而完成基板 之狀態。 於該等圖式中，符號1表示通常由銅(Cu)、鋁(Al)或氧 化紹所構成之基材，又，分麟，符號2表示_環氧基板， 200845432 •符號3表示銅箔，符號4表示蓋鍍層（銅鍍層），符號5表示抗 蝕層，符號6表示導電性糊劑(散熱通孔），符號7表示導電性 糊劑(硬化物）’符號8表示銀鑛層或鎳鍍層，符號9表示反射 面，符號9’表示業經電鍍之反射面，符號1〇表示發光二極 ^ 5體晶粒，符號Η表示導線，符號20表示鑽頭。 • 前述第〗(a)圖所示之完成電路形成之基板可藉由目前 公知之任意方法來形成，即，完成電路形成之基板並不限 φ 於圖不之結構，然而，若為該結構者，則於業已在單面上 設置銅fl層3之玻璃環氧基板2上預先形成發光二極體晶粒 下方構成散熱通孔之開口部，並將其與基材！黏合，且於前 述開口部填充糊劑6並使其硬化，且進行研磨、整面，其次， 於業已填充該糊劑6之散熱通孔上施行蓋鑛層愤，進行圖 案形成並形成抗#層5。又，該散熱觀財助於透過蓋鑛 層4設置於其上方之發光二極體晶粒(未圖示)之散熱。 15 於本發明中，如帛1⑻圖所示，在此種完成電_成之 φ 基板上面將導電性糊劑一大片地塗布成必要之厚度，又， 塗布方法係使用藉由金屬掩模或網板之印刷法等^ 塗布厚 • 錢依據發光二極縣板之用料適當地決定，然而通常 為 200μπι〜500μηι。 • 2〇 財發射所制之導電性_係作成必須成分至少 含有熱硬化性樹脂、硬化劑及熱傳導性填料，又，導電性 糊劑宜為熱傳導性亦良好者。 、^ 熱硬化性樹脂宜摻合、使用選自於環氧樹脂、祕樹 脂、醇酸樹脂、三聚氰胺樹脂、丙烯酸賴樹脂、石夕氧樹脂 8 200845432 -中之1種或2種以上，其中，若由耐熱性、密接性之觀點來 看，則宜為環氧樹脂。 金屬填料係使用銀粉、銅粉、鍍銀銅粉、鎳粉等金屬 粉，其中，宜為銀粉、銅粉、鍍銀鋼粉。 5 金屬填料之形狀並無特殊之限制，然而可列舉如樹枝 — 狀、球狀、鱗片狀等，又，粒徑宜為Ιμπι〜50μιη，且更為 ^ 理想的是2μπι〜丨5^1111。金屬填料亦可僅使用一種，且亦可 混合使用2種以上。 • 莉述金屬填料係相對於熱硬化性樹脂100重量份摻合 10 400重量份〜13〇〇重量份，且較為理想的是500重量份〜 1000重量份，若小於400重量份，則電傳導度會變差，若大 於1300重量份，則會有因增稠而降低作業性之情形。 環氧樹脂之硬化劑宜為咪唑系硬化劑，咪唑系硬化劑 之例子可列舉如··咪唑、2—十一基咪唑、2_十七基咪唑、 15 2—乙基咪唑、2—苯基咪唑、2—乙基一4一曱基一咪唑、j 氰乙基一2 —十一基咪唑、2—苯基咪唑、2，4一二胺基 —6〜〔2’一曱基咪唑基一（1，）〕一乙基—s—三嗪。 咪唾系硬化劑宜相對於環氧系樹脂1〇〇重量份摻合15 重置份〜40重量份，且較為理想的是3重量份〜20重量份， • 20若添加份數小於1.5重量份，則會構成硬化不足，若大於4〇 重里份，則因經久所造成之增稠程度大且塗布困難，又， 於保管中糊劑會增稠而使作業性惡化。 本發明之導電性糊劑之黏度宜為5〇〇dPa . s〜 3000dPa · s之範圍，若黏度低於5〇〇dPa · s，則塗布後會產 9 200845432 ‘ 生糊劑滴流之問題，又，若黏度大於3〇〇〇dPa · s，則塗布 會變得困難。另，於本說明書中糊劑之黏度係指利用BH型 黏度計且使用No · 7轉子時於25°C、lOrpm下之測定值。 前述導電性糊劑係於塗布後使用空氣烘箱等任意之加 5熱機構來使其加熱硬化，硬化條件係依據所使用之樹脂或 硬化劑而不同，然而，通常KUtrc〜200。(：下為3〇分鐘〜 分鐘。 _ 如第i(c)圖所示，糊劑硬化後係藉由鑽頭20於配置發光 一極體晶粒10之預定位置穿孔，並形成具有所期望之傾斜 10 角之反射面9。 第3圖係顯示在此所使用之鑽頭2〇之主要部分放大正 視圖，又，分別地，符號21表示前端部，符號22表示前端 面付號23表不刀鋒。如本圖所示，前端部21係構成具有 U大致平坦之前端面22的截頭錐狀，依此，在用其來崎穿 5孔時，可形成底面大致平坦且具有大致沿著鑽頭前端部21 之形狀的錐狀側壁面之孔。 「t，於本㈣巾所形成且誠反射面之錐狀側壁面之 ★ Θ斜角度及尺寸可藉由改變所使用之鑽頭而依需要進行變 更。 2〇 錐狀側壁面之傾斜角度並無特殊之限制，可依昭 基板之_料當地決定，然而，為了得到^之 反射效率，宜將第1(e)圖中之角度α設為5G。〜7G。之範圍， 且通常設為60。左右即可。 |進行鑽歡穿料，控醫孔職使其僅切削 10 200845432 導電性糊劑層而不會切削至 〜 9 &其下方之電路基板是重要的， 牙孔深度雖可藉由設置於鑽 德# + 實床4工作機械之一般機械控制 機構來進行控制，然而， 利 f 僅错由機械控制，則通常會產 生數十μιη之誤差，因此，宜 且便用於鑽碩之前端部到達電路 %可檢測鑽頭與基板電路間 — 通而停止穿孔之電控制， 耩此，可將誤差縮小至土5μιη。In the case where the reflection portion is provided for the purpose of increasing the luminance of the light-emitting diode, in order to form the reflection portion, the following method is generally used, that is, as disclosed in Patent Document 1, for example, polycarbonate 6 The heat-resistant engineering plastic resin material is formed by injection molding, smelting forming, extrusion molding, etc., and the reflecting member of the 疋 shape is subjected to silver plating (Ag) after the electroless nickel (10). Then _ it follows the dare to illuminate the second substrate. Moreover, the method described above must have a high-priced mold when forming the reflecting member. Further, there must be a number of steps until the reflecting portion is formed, which has a problem of considerable time and cost.曰/, and the resulting reflection portion causes loss of reflected light due to the adhesive agent used to illuminate the member. The inventors of the present invention disclose that a reflecting portion of a desired shape is formed by direct = conductive paste on a substrate and does not need to be followed (Patent Document 2), compared to the aforementioned conventional method, The method has the advantages of manufacturing materials of σ towel field and manufacturing cost. However, in this method, the reproducibility of the shape or size of the reflecting portion is not suitable for the case where the wire is highly precise. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 9-81055 (Patent Document 2) Japanese Patent Application No. 2007-20075, the disclosure of the present invention, the disclosure of the present invention, and the subject of the present invention. The problem is to provide a method for manufacturing a light-emitting diode substrate, which does not require the use of a subsequent process of d, and can be formed with a high degree of precision and low cost. The reflecting surface of the angle and the reflecting portion of the desired size. Means for Solving the Problem The manufacturing method of the present invention is a method for manufacturing a light-emitting diode substrate having a reflecting portion for increasing the luminance of the light-emitting diode, and in order to achieve the purpose of the description, the surface of the substrate on which the circuit has been formed Applying the conductive paste and heating the conductive paste to harden it, and arranging the light-emitting diodes / /.娶|, the hardened conductivity by the drill having the frustoconical front end The paste is perforated to form a space having a tapered side wall surface constituting the reflecting portion. In the manufacturing method described above, it is preferable to perform silver plating or nickel plating by plating on the surface of the reflecting portion. , ', 黾 〖 糊 糊 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生The ratio contains a flavor of a salivary hardener and a metal filler selected from the group consisting of copper powder and 6 200845432 forged silver copper powder in a proportion of 400 parts by weight of the lion weight. Conductive paste. Advantageous Effects of Invention According to the manufacturing method of the present invention, as described above, after the conductive paste is applied to the light-emitting diode substrate 5 and hardened, the drill can be processed to have a desired high precision. Since the tilting angle and the size of the reflecting portion' do not require the use of an adhesive bonding procedure, the manufacturing process can be simplified, and since the mold is not required, the cost can be greatly reduced. Further, as described above, since a conductive paste is used, direct plating of silver or nickel can be performed by using 10 plating, and the procedure can be simplified in this respect. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the manufacturing method of the present invention will be described in detail with reference to the drawings. However, the substrate structure or shape shown here is an example, and the present invention is not limited thereto. 15 and 1 and 2 are enlarged sectional views showing an example of formation of a reflecting portion according to the present invention, and Fig. 1(a) is a view showing a substrate on which a completed circuit is formed before paste application, and Fig. 1(b) shows The conductive paste has been applied to the substrate shown in Fig. 1(a), and the first (C) diagram is shown on the substrate on which the paste has been applied as shown in Fig. 1(b). The state of perforation by the drill bit, and the second 20th figure is shown in the figure, the surface of the paste hardened by the drill bit is formed into a plating layer (silver plating layer or nickel plating layer) and the light emitting diode crystal grains are mounted to complete the state of the substrate. . In the drawings, reference numeral 1 denotes a substrate which is usually composed of copper (Cu), aluminum (Al) or oxidized, and further, a rib, a symbol 2 denotes an epoxide substrate, 200845432, and a symbol 3 denotes a copper foil. Reference numeral 4 denotes a cap plating layer (copper plating layer), reference numeral 5 denotes a resist layer, reference numeral 6 denotes a conductive paste (heat-dissipating via hole), and reference numeral 7 denotes a conductive paste (hardened material)' symbol 8 denotes a silver ore layer or Nickel plating, symbol 9 denotes a reflecting surface, symbol 9' denotes a reflecting surface which is electroplated, symbol 1 〇 denotes a light-emitting diode 5 body grain, symbol Η denotes a wire, and symbol 20 denotes a drill bit. • The substrate on which the completed circuit is formed in the above-mentioned (a) diagram can be formed by any method known in the art, that is, the substrate on which the circuit is formed is not limited to the structure of the figure, however, if it is the structure In the glass epoxy substrate 2 on which the copper fl layer 3 is provided on one surface, the opening portion of the light-emitting diode die below the heat-dissipating through-hole is formed in advance and is bonded to the substrate! Bonding, and filling the paste 6 in the opening portion and hardening it, and grinding, the whole surface, and secondly, performing cover layer anger on the heat dissipation through hole filled with the paste 6, patterning and forming anti-# Layer 5. Further, the heat dissipation helps the heat dissipation through the light-emitting diode crystal grains (not shown) provided above the cover layer 4 . In the present invention, as shown in FIG. 1(8), a conductive paste is applied to a necessary thickness on a substrate of the completed φ substrate, and the coating method is performed by using a metal mask or The printing method of the stencil, etc. ^ The thickness of the coating is appropriately determined according to the materials used for the luminescent bipolar plate, but it is usually 200 μm to 500 μm. • The conductivity of the 发射 发射 发射 _ 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 必须 。 。 。 。 。 。 。 。 。 。 。 。 。 , the thermosetting resin is preferably blended, and one or more selected from the group consisting of epoxy resin, secret resin, alkyd resin, melamine resin, acrylic resin, and sulphuric acid resin 8 200845432, wherein From the viewpoint of heat resistance and adhesion, it is preferably an epoxy resin. As the metal filler, metal powder such as silver powder, copper powder, silver-plated copper powder or nickel powder is used, and among them, silver powder, copper powder, and silver-plated steel powder are preferable. 5 The shape of the metal filler is not particularly limited, and may be, for example, a branch-like shape, a spherical shape, a scale shape, or the like, and the particle diameter is preferably Ιμπι 5050 μm, and more preferably 2 μπι 丨5^1111. The metal filler may be used singly or in combination of two or more. • The Lishi metal filler is blended with 10 400 parts by weight to 13 parts by weight, and more preferably 500 parts by weight to 1000 parts by weight, based on 100 parts by weight of the thermosetting resin, and if it is less than 400 parts by weight, electrically conductive If the degree is more than 1300 parts by weight, the workability may be lowered due to thickening. The hardener of the epoxy resin is preferably an imidazole hardener, and examples of the imidazole hardener include, for example, imidazole, 2-undecylimidazole, 2-7 heptyl imidazole, 15 2-ethylimidazole, 2-benzene. Imidazole, 2-ethyl-4-indolyl-imidazole, j-cyanoethyl-2-undecyl imidazole, 2-phenylimidazole, 2,4-diamino- 6~[2'-mercaptoimidazole Base one (1,)] monoethyl-s-triazine. Preferably, the sodium salivating agent is blended with respect to 1 part by weight of the epoxy resin, 15 parts by weight to 40 parts by weight, and more preferably 3 parts by weight to 20 parts by weight, and 20 if the number of parts added is less than 1.5 parts by weight. If it is more than 4 parts by weight, the thickening due to the long-term is large and the coating is difficult, and the paste is thickened during storage to deteriorate the workability. The viscosity of the conductive paste of the present invention is preferably in the range of 5 〇〇dPa s to 3000 dPa · s. If the viscosity is less than 5 〇〇 dPa · s, the coating will yield 9 200845432 'The problem of the paste flow of the raw paste Moreover, if the viscosity is more than 3 〇〇〇dPa · s, coating becomes difficult. In addition, in the present specification, the viscosity of the paste refers to a value measured at 25 ° C and 10 rpm when a No. 7 rotor is used using a BH type viscometer. The conductive paste is heat-cured by an optional heat-adding mechanism such as an air oven after application, and the curing conditions vary depending on the resin or hardener used, but usually KUtrc 〜200. (: 3 minutes to minutes. _ As shown in the figure i(c), after the paste is hardened, the bit 20 is perforated by the drill bit 20 at a predetermined position where the light-emitting monopole die 10 is disposed, and is formed to have a desired shape. The reflection surface 9 is inclined at 10 angles. Fig. 3 is an enlarged front elevational view showing the main part of the drill bit 2 used here, and, respectively, symbol 21 indicates the front end portion, and symbol 22 indicates the front end surface number 23 indicates no blade edge. As shown in the figure, the front end portion 21 is formed in a frustoconical shape having a front end 22 which is substantially flat. Therefore, when it is used to penetrate five holes, the bottom surface can be formed to be substantially flat and substantially along the front end of the drill. The hole of the tapered side wall surface of the shape of the portion 21. "t, the tapered side wall surface formed by the (four) towel and the reflective surface of the surface. The skew angle and size can be changed as needed by changing the drill bit used. 2 The inclination angle of the tapered side wall surface is not particularly limited, and may be determined locally according to the material of the substrate. However, in order to obtain the reflection efficiency, the angle α in the first (e) diagram should be set to 5G. ~7G. The range is usually set to 60. It can be left and right. Dressing, control the medical staff to cut only 10 200845432 conductive paste layer without cutting to ~ 9 & the circuit board underneath it is important, although the depth of the hole can be set by Drilling # + The general mechanical control mechanism of the working machine of the solid bed 4 is used for control. However, if the error is only controlled by the machine, it usually produces an error of several tens of μm, so it is suitable for the end of the circuit before reaching the circuit. Detecting the electrical control between the drill bit and the substrate circuit - stopping the perforation, thereby reducing the error to 5 μm.

發光二極體基板通常係於如第认2圖所示之單位排列 成矩雜之狀態下製造，且於切斷成各單位後完成，又， 由於各單位係藉由虛擬電路相互地連接，因此可利用該虛 10擬電路檢測鑽頭與基板電路間之導通。 服 在結東利用鑽頭之穿孔後，為了提升反射效率，反射 面9宜作成業已於表面形成鐘層8之面9,，鐘層8宜藉由電鍍 直接形成銀鑛層或鎳鍍層，於本發明中，藉由提高導電性 糊劑之電傳導性，而可於糊劑硬化物7上直接電鍍。 15 於電鍍處理後，在散熱通孔上方之鍍層8上之預定位置 安裝發光二極體晶粒10,並藉由導線11進行鍍層8與發光二 極體晶粒10間之配線，藉此，可完成於錐狀之反射面9,之 中央部配置有發光二極體晶粒1〇之發光二極體基板。 【實施例】 以下顯示本發明之實施例，然而，本發明並不限於以 下實施例。 [實施例] 分別藉由以下所示之比率（重量比)混合以下環氧樹 脂、硬化劑、鍍銀銅粉，並調製熱傳導性導電性糊劑。另， 11 200845432 • 詳細之各成分係如以下所示。 衣氧祕月日·玉衣氧樹脂EP—4901E(旭電化工業股份有限 公司製造)8〇重量％、ED—529(旭電化卫業股份有限公司製 造）20重量％ 100重量份 5 硬化劑：2—乙基―（_化成卫業股份有限公司） ‘ 15重量份 鐘銀銅粉·平均粒徑1恤、球餘、㈣量1 Gwt% 800 重量份 籲 11於前述糊劑’於坑下使用BH型黏度計轉子N〇 . 7 10 (lOrpm)測定黏度時為18〇〇。 準備第1圖所示結構之完成電路形成之基板，並塗布前 述糊劑以構成硬化後之厚度300μπ1，且於16(rc下加熱60分 鐘而使其硬化。 使用珂端部為截頭錐狀之鑽頭（前端部直徑0 61nm、傾 Μ斜角60。)將業已硬化之糊劑穿孔，並形成具有構成反射部 之錐狀側壁面之孔。 ® 鑽頭係藉由機械機構預先設定旋轉數與穿孔深度，並 調整為在構成接近所設定之穿孔深度位置時減少旋轉數， 、 又，預先藉由導線連接鑽頭、導通檢測器與預定之基板電 • 20路，當鑽頭前端與基板電路之蓋鍍層接觸時，前述導通檢 測電路會作動並停止鑽頭之旋轉。 在穿孔結束後，藉由電鍍於硬化糊劑之表面全體鐘銀。 將所形成之孔於大致中央部朝縱向切斷，並藉由電子 顯微鏡觀察切斷面時，截面係構成各邊呈直線狀之俐落梯 12 200845432 - 形，且底部之直徑為0.6mm，侧面之傾斜角為60。，又，大 致未發現蓋鍍層之切削，可確認穿孔會在所設定之深度停 止。 【圖式簡單説明3 ♦ 5 第1圖係顯示依據本發明之反射部之形成例的放大模 式截面圖，第1(a)圖係顯示糊劑塗布前之基板，第1(b)圖係 顯示糊劑塗布後之基板’第1(c)圖係顯示將糊劑硬化物藉由 鑽頭切削中之基板。 弟2圖係絲員不於弟1圖切削後之糊姻硬化物上鑛銀成鐘 10 鎳之狀態的放大模式截面圖。 第3圖係顯示於本發明中所使用之鑽頭之主要部分正 視圖。 【主要元件符號說明】 1.. .銅、銘或氧化銘基材 2.. .玻璃環氧基板 3.. .銅箔 4···蓋鍍層(銅鍍層） 5.. .抗蚀層 6.. .導電性糊劑(散熱通孔) 7···導電性糊劑(硬化物） 8.. .銀鍍層或鎳鍍層 9，9’.··反射面 1 〇…發光二極體晶粒 11…導線 20.. .鑽頭 21.. .前端部 22.. .前端面 23···刀鋒 13The light-emitting diode substrate is usually manufactured in a state in which the units shown in FIG. 2 are arranged in a matrix, and is completed after being cut into units, and since each unit is connected to each other by a virtual circuit, Therefore, the dummy 10 circuit can be used to detect the conduction between the drill bit and the substrate circuit. After using the piercing of the drill bit in the east, in order to improve the reflection efficiency, the reflecting surface 9 should be formed on the surface 9 of the clock layer 8 formed on the surface, and the clock layer 8 should directly form a silver ore layer or a nickel plating layer by electroplating. In the invention, the paste can be directly electroplated by improving the electrical conductivity of the conductive paste. After the electroplating process, the light emitting diode die 10 is mounted at a predetermined position on the plating layer 8 above the heat dissipation via hole, and the wiring between the plating layer 8 and the light emitting diode die 10 is performed by the wire 11. The light-emitting diode substrate of the light-emitting diode crystal 1 is disposed in the central portion of the tapered reflective surface 9. [Examples] The examples of the invention are shown below, however, the invention is not limited to the following examples. [Examples] The following epoxy resin, curing agent, and silver-plated copper powder were mixed by the ratio (weight ratio) shown below, and a thermally conductive conductive paste was prepared. In addition, 11 200845432 • The detailed components are as follows. Epoxy Secret Moon·Yuyin Oxygen Resin EP—4901E (manufactured by Asahi Denki Kogyo Co., Ltd.) 8〇% by weight, ED—529 (manufactured by Asahi Denki Kasei Co., Ltd.) 20% by weight 100 parts by weight 5 Hardener: 2-ethyl-(_Chemical Guard Co., Ltd.) '15 parts by weight of silver-silver powder · average particle size 1 shirt, ball balance, (four) amount 1 Gwt% 800 parts by weight of 11 in the above paste 'under the pit When the viscosity was measured using a BH type viscometer rotor N〇. 7 10 (10 rpm), it was 18 〇〇. The substrate formed by the completed circuit of the structure shown in Fig. 1 was prepared, and the paste was applied to have a thickness of 300 μπ1 after hardening, and was cured by heating at 16 (rc for 60 minutes). The end portion was frustoconical. The drill (the front end portion has a diameter of 0 61 nm and a tilting angle of 60.) perforates the hardened paste and forms a hole having a tapered side wall surface constituting the reflecting portion. The drill bit is preset by the mechanical mechanism and the number of rotations is The depth of the perforation is adjusted to reduce the number of rotations when the position is close to the set depth of the perforation, and the wire is connected to the drill bit, the conduction detector and the predetermined substrate by the wire, and the front end of the drill bit and the substrate circuit cover When the plating is in contact, the conduction detecting circuit operates to stop the rotation of the drill bit. After the end of the perforation, all the silver is electroplated on the surface of the hardened paste. The formed hole is cut at a substantially central portion in the longitudinal direction, and is borrowed. When the cut surface is observed by an electron microscope, the cross section is a linear trapped ladder 12 200845432 - shaped, and the diameter of the bottom is 0.6 mm, and the inclination angle of the side is 60. In the case where the cutting of the cap plating was not observed, it was confirmed that the perforation was stopped at the set depth. [Simple description of the drawing 3 ♦ 5 Fig. 1 is an enlarged schematic cross-sectional view showing the formation example of the reflecting portion according to the present invention, first (a) The figure shows the substrate before the paste application, and the first (b) shows the substrate after the paste application. FIG. 1(c) shows the substrate in which the paste cured product is cut by the drill. (2) A magnified mode cross-sectional view of the state of the silver paste in the paste-cured material after the cutting of the figure 1 is shown in Fig. 1. Fig. 3 is a front view showing the main part of the drill used in the present invention. [Main component symbol description] 1.. Copper, Ming or Oxidation substrate 2.. Glass epoxy substrate 3.. Copper foil 4···Cover plating (copper plating) 5.. 6.. Conductive paste (heat dissipation through hole) 7··· Conductive paste (cured material) 8.. Silver plating or nickel plating 9,9'.··reflecting surface 1 〇...light emitting diode Die 11... wire 20.. drill bit 21.. front end 22.. front end face 23··· blade 13

Claims (1)

200845432 十、申請專利範圍·· l二種發光二極體基板之製造方法1發*二極體基板具 传於案使1光—極體㈣度化之反射部，而該製造方法 =已形成電路之基板表面塗布導電性糊劑，並加熱 使其硬化，且於配置發光二極體之位置 '营藉由’、有截雜狀之w端部之鑽鄉前述業已硬化 之導電性_穿孔，形成具有構成反㈣之錐狀側壁面 之空間。 10 15 20 2.如Μ專利_第丨項之發光二極體基板之製造方法， 係稭由電鍍於前述反射部之表面進行鑛銀或鍛錄。 .2請專鄉圍第〗或2項H極縣板之製造方 久吏用έ有熱硬化性樹脂、硬化劑及金屬填料之熱 傳導性糊劑作為前述導電性糊劑。 4·如專利範圍第1至3項中任-項之發光二極體基板 之=方法，係使用相對於環氧樹脂100重量份，以1.5 重::〜40重量份之比例含有咪唑系硬化劑、及以_ — 13〇〇重置份之比例含有選自於由鋼粉及鍍銀 銅私所構成之群中之丨種或2種以上之金屬填料形成的 導電性糊劑，作為前述導電性糊劑。 I US利範圍第，項中任—項之發光二極體基板 衣k法，其係於前述鑽頭之前端部到達電 測鑽頭與電路間之導通而停止穿孔。 ^ 14200845432 X. Patent application scope · · Manufacturing method of two kinds of light-emitting diode substrates 1 The light-emitting diode substrate has a reflection portion which is transmitted by a light-polar body (four degrees), and the manufacturing method = formed The surface of the substrate of the circuit is coated with a conductive paste and heated to harden it, and at the position where the light-emitting diode is disposed, the conductive portion of the drilled town has a hardened conductivity. Forming a space having a tapered side wall surface constituting the inverse (four). 10 15 20 2. The method for manufacturing a light-emitting diode substrate according to the above-mentioned patent, wherein the straw is plated on the surface of the reflecting portion for mineral or forging. .2 Please refer to the special hometown or the second manufacturer of the H-prefecture plate. The heat-conductive paste containing a thermosetting resin, a hardener and a metal filler is used as the conductive paste. 4. The method of the light-emitting diode substrate according to any one of the first to third aspects of the invention, which comprises using an imidazole-based hardening at a ratio of 1.5 weight:: to 40 parts by weight relative to 100 parts by weight of the epoxy resin. And a conductive paste formed of a metal filler selected from the group consisting of steel powder and silver-plated copper, or two or more kinds of metal fillers, in the ratio of _ 13 〇〇 of the replacement portion, as the aforementioned Conductive paste. The method of the light-emitting diode substrate of any of the items of the above-mentioned item, wherein the end portion of the drill bit reaches the conduction between the electric drill and the circuit to stop the perforation. ^ 14
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