CN101276876A - Manufacturing method of light emitting diode substrate - Google Patents
Manufacturing method of light emitting diode substrate Download PDFInfo
- Publication number
- CN101276876A CN101276876A CNA2008101092378A CN200810109237A CN101276876A CN 101276876 A CN101276876 A CN 101276876A CN A2008101092378 A CNA2008101092378 A CN A2008101092378A CN 200810109237 A CN200810109237 A CN 200810109237A CN 101276876 A CN101276876 A CN 101276876A
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- Prior art keywords
- emitting diode
- conductive paste
- light emitting
- base plate
- manufacture method
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000014509 gene expression Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- -1 2-ethyl imidazol Chemical compound 0.000 description 2
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 208000001840 Dandruff Diseases 0.000 description 1
- 241000555268 Dendroides Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Led Device Packages (AREA)
Abstract
This invention discloses a fabrication method of LED substrate, which is applied to enhancing brightness of LCD without adhesion process using adhesive, and is able to precisely form reflection portion having expected shape and size with low cost. The fabrication method comprises steps as follows: coating conductive paste onto substrate surface disposed with loop; heating and solidifying the conductive paste; perforating solidified conductive paste via drill with top part of conical table shape in position arranged with the LCD, so as to form space comprising tapered side wall face which is regarded as reflection portion.
Description
Technical field
The present invention relates to a kind of manufacture method of light emitting diode base plate, this light emitting diode base plate has reflecting part so that light-emitting diode has high brightness.
Background technology
At present, reflecting part is being set so that light-emitting diode when having high brightness, in order to form this reflecting part, such as patent documentation 1 record, usually for example use to be material, by injection moulding, melt molding, extrusion molding etc. with the such heat-resistant engineering plastic resin of Merlon, form the reflection part material of definite shape, after implementing chemical nickel plating, carry out silver-plated processing, by adhesive it is adhered to method on certain light emitting diode base plate again.
But said method needs expensive mould when forming the reflection part material, in the process that forms reflecting part, need the multistep operation, needs considerable time and cost.
In addition, the reflecting part of gained is because the adhesive phase of bonding reflection part material produces the reverberation loss.
With respect to this, inventor of the present invention has proposed direct printing conductive paste on substrate, thereby does not have bonding process, just forms the scheme (patent documentation 2) of the reflecting part of desirable shape.This method is compared with above-mentioned existing method, has manufacturing process and simplifies significantly, can reduce the advantage of manufacturing cost.
But the shape and the resizing of the reflecting part of this method are lower slightly, have and the unconformable problem of the high-precision occasion of needs.
Patent documentation 1: the spy opens flat 9-81055 communique
Patent documentation 2: special hope 2007-20075 specification
Summary of the invention
The present invention is based on the problems referred to above and proposes, purpose is to provide a kind of manufacture method of light emitting diode base plate, this manufacture method is not used the bonding process of adhesive, can high accuracy and form at low cost and have the reflecting surface at desirable angle of inclination and the reflecting part of desirable size.
Manufacture method of the present invention is a kind of manufacture method with light emitting diode base plate of the reflecting part that is used to make the light-emitting diode high brightnessization, in order to address the above problem, this manufacture method is to form the substrate surface coating conductive paste in loop, this conductive paste is heating and curing, in the conductive paste perforation of the rig at the top of position by having truncated cone shape of configuration light-emitting diode, thereby form space with the tapered side wall that forms reflecting part with above-mentioned curing.
In said method, preferably plate Ag or plating Ni on the reflecting part surface by plating.
Preferably use the heat conduction paste that contains thermosetting resin, curing agent and metallic stuffing as conductive paste.Particularly, preferably use, contain 1.5～40 weight portion imidazole curing agents, and 400～1300 weight portions are selected from the conductive paste of the metallic stuffing more than a kind or 2 kinds of copper powder and silver coating copper powder with respect to 100 weight portion epoxy resin.
Manufacturing method according to the invention as mentioned above, can be coated with conductive paste on light emitting diode base plate, after the curing, the processing of holing can be with high accuracy and do not use the bonding process of adhesive, forms the reflecting part with desirable angle of inclination and size.Therefore, can simplify manufacturing process, and not need mould, so can reduce cost significantly.
In addition, as mentioned above,,, in this respect, also simplified operation so can use plating directly to plate Ag or plating Ni owing to use conductive paste.
Description of drawings
Fig. 1 is the amplification profile schematic diagram of the formation example of expression reflecting part of the present invention, the substrate before (a) the expression coating is stuck with paste, the substrate after (b) the expression coating is stuck with paste, the substrate when (c) expression is stuck with paste solidfied material by the rig cutting.
Fig. 2 is illustrated in the amplification profile schematic diagram of the state that plates Ag or plating Ni on the paste solidfied material after the cutting shown in Figure 1.
Fig. 3 represents the front view of the critical piece of the rig that the present invention uses.
Symbol description
1 Cu, Al or aluminum oxide base material
2 glass epoxy substrates
3 Copper Foils
4 lid coating (copper coating)
5 resist layers
6 conductive pastes (passage of heat)
7 conductive pastes
8 Ag or Ni coating
9,9 ' reflecting surface
10 light-emitting diode chip for backlight unit
11 leads
20 rigs
21 tops
22 end faces
23 blades
Embodiment
Below, use accompanying drawing that manufacture method of the present invention is elaborated.But the structure of the substrate shown in, shape are an example here, are not limitation of the invention.
Fig. 1 and Fig. 2 are the amplification profile schematic diagrames of the formation example of expression reflecting part of the present invention, (a) substrate that forms the loop before the expression coating is stuck with paste, (b) be illustrated in the figure that has been coated with conductive paste on the substrate shown in (a), (c) in the substrate of sticking with paste that has been illustrated in the coating shown in (b), after sticking with paste curing, by the state of rig perforation.In addition, the paste solidfied material surface of passing through after rig is bored a hole that Fig. 2 is illustrated in Fig. 1 forms coating (Ag or Ni coating), and the state that light-emitting diode chip for backlight unit is finished substrate is installed.
In these figure, the base material that symbol 1 expression is formed by Cu, Al or aluminium oxide usually.Symbol 2 expression glass epoxy substrates, symbol 3 expression Copper Foils, coating (copper coating) is covered in symbol 4 expressions, symbol 5 expression resist layers, symbol 6 expression conductive pastes (passage of heat), symbol 7 expression conductive pastes (solidfied material), symbol 8 expression Ag or Ni coating, symbol 9 expression reflectings surface, the reflecting surface of symbol 9 ' expression having carried out plating, symbol 10 expression light-emitting diode chip for backlight unit, symbol 11 expression leads, symbol 20 expression rigs.
The substrate that forms the loop shown in above-mentioned (a) can form by present known any means.Just, the substrate that has formed the loop is not limited to illustrated structure, but if this structure, then can be pre-formed peristome on the glass epoxy substrate 2 that is provided with copper foil layer 3 on the one side, this peristome becomes the passage of heat under the light-emitting diode chip for backlight unit, and substrate 2 and base material 1 are fitted, at above-mentioned peristome filling-in paste 6, make its curing, grind treatment surface.Then, after implementing to cover coating 4 on the passage of heat of having filled this paste 6, form pattern, form resist layer 5.This passage of heat helps light-emitting diode chip for backlight unit disposed thereon (not shown) heat release by covering coating 4.
In the present invention, formed the upper surface of the substrate in loop, shown in figure (b), be coated with the conductive paste of necessary thickness in one side at this.Can use metal mask or screen printing method etc. as coating process.Coating thickness is generally about 200～500 μ m according to the suitably decisions such as purposes of light emitting diode base plate.
The conductive paste that uses among the present invention contains thermosetting resin, curing agent and heat conductivity filler at least and is necessary composition.The preferred heat conductivity of conductive paste is good.
As thermosetting resin suitable be that the blend more than a kind or 2 kinds that will be selected from epoxy resin, phenolic resins, alkyd resins, melmac, acrylate, organic siliconresin is used.Wherein, from thermal endurance, adaptation aspect, preferred epoxy.
Can use metal dusts such as silver powder, copper powder, the silver-colored copper powder that is coated with, nickel powder as metallic stuffing.Wherein, the copper powder of preferred silver powder, copper powder, silver coating.
There is no particular limitation for the shape of metallic stuffing, can the illustration dendroid, spherical, flakey etc.In addition, particle diameter is preferably 1～50 μ m, more preferably 2～15 μ m.Metallic stuffing can only be used a kind, also can use mixing the back more than 2 kinds.
With respect to 100 weight portion thermosetting resins, above-mentioned metallic stuffing cooperates 400～1300 weight portions, more preferably 500～1000 weight portions.Less than 400 weight portions the time, the conductance variation, if surpass 1300 weight portions, then viscosity increases, operation may reduce.
As curing agent for epoxy resin, preferred imidazole curing agent.Example as imidazole curing agent can list imidazoles, 2-undecyl imidazole, 2-heptadecyl imidazoles, 2-ethyl imidazol(e), 2-phenylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecyl imidazole, 2-phenylimidazole, 2,4-diaminourea-6-[2 '-methylimidazolyl-(1 ')]-ethyl-s-triazine.
With respect to 100 weight portion epoxylites, imidazole curing agent preferably mixes 1.5～40 weight portions, more preferably mixes 3～20 weight portions.When adding umber less than 1.5 weight portions, solidifies insufficiently, when surpassing 40 weight portions, along with the time changes viscosity and increases obviously, coating becomes difficulty.In addition, when keeping, the viscosity of paste increases, the operation deterioration.
The viscosity of conductive paste of the present invention is preferably 500～3000dPas.If viscosity is lower than 500dPas, then after the coating, produce the problem of sticking with paste soft (ダ レ).In addition, when viscosity surpassed 3000dPas, it is difficult that coating becomes.In addition, the viscosity of the paste in this specification is by BH type viscosimeter, uses the No.7 rotor, 25 ℃, the 10 rev/mins values of measuring down.
Above-mentioned conductive paste is after coating, and heater such as use air-oven etc. arbitrarily are heating and curing.Condition of cure is according to the resin that uses, curing agent and different, normally 120～200 ℃ of heating about 30 minutes～120 minutes down.
After sticking with paste curing, shown in (c), by rig 20, the assigned position perforation at configuration light-emitting diode chip for backlight unit 10 forms the reflecting surface 9 with desirable angle of inclination.
Fig. 3 is the amplification front elevation of the critical piece of expression rig 20 used herein.Symbol 21 expression tops, symbol 22 expression end faces, symbol 23 expression blades.As shown in this figure, top 21 forms has the truncated cone shape of almost smooth end face 22, thus, when using this rig perforation, forms the bottom surface general planar, has roughly the hole of the tapered side wall that coincide with the shape at rig top 21.
Therefore, as the angle of inclination and the size of the taper side wall surface of formed reflecting surface can change as required by changing the rig that uses in the present invention.
There is no particular limitation at the angle of inclination of taper side wall surface, can be according to the suitably decisions such as purposes of light emitting diode base plate, and in order to obtain good reflection efficiency, the angle [alpha] among preferred Fig. 1 (c) is 50 °～70 °, usually near 60 °.
When boring a hole, in order only to eliminate the conductive paste layer, and do not cut following loop substrate, the importantly control punch degree of depth by rig.Penetration depth can be controlled by the common machine control unit that is provided with on lathes such as drilling machine, only by machinery control, can produce the error about tens μ m usually.Therefore, when arriving the loop, preferably use electric control, detect the connection between rig and the substrate loop, and stop perforation at the rig top.Thus, error can be reduced to ± 5 μ m about.
Light emitting diode base plate normally forms the state manufacturing of the unit shown in Fig. 1 and 2 with rectangular assortment, finishes after each unit is cut off.Whether each unit interconnects by virtual circuit, so utilize this virtual circuit, can detect between rig and substrate loop and be communicated with.
After the rig punch off, in order to improve reflection efficiency, reflecting surface 9 is preferably the face 9 ' that has formed coating 8 on the surface.Coating 8 is preferred by electroplating directly formation plating Ag layer or plating Ni layer.In the present invention, by improving the electrical conductance of conductive paste, can on paste solidfied material 7, directly electroplate.
After plating is handled, light-emitting diode chip for backlight unit 10 is installed on the assigned position on the coating above the passage of heat 8, by carrying out distribution between 11 pairs of coating 8 of lead and the luminescent layer diode chip for backlight unit 10, can finish the light emitting diode base plate that has disposed light-emitting diode chip for backlight unit 10 at the central portion of taper reflecting surface 9 '.
Embodiment
Below, the expression embodiments of the invention, but the present invention is not subjected to the qualification of following examples.
Mix preparation heat conductivity conductive paste respectively with the copper powder of the ratio (weight ratio) shown in following with following epoxy resin, curing agent, silver coating.In addition, each composition is detailed as follows.
Epoxy resin: epoxy resin-4901E (Asahi Denka Kogyo K. K's manufacturing) 80 weight %, ED-529 (Asahi Denka Kogyo K. K's manufacturing) 20 weight % 100 weight portions
Curing agent: 2-ethyl imidazol(e) (Shikoku Chem) 15 weight portions
The copper powder of silver coating: average grain diameter 10 μ m, spherical powder, silver-colored coating weight 10wt% 800 weight portions
Under 25 ℃, use BH type viscosimeter, rotor is No.7 (10 rev/mins), when measuring the viscosity of above-mentioned paste, viscosity is 1800.
Prepare the substrate that forms the loop of structure shown in Figure 1, be coated with above-mentioned paste, heated 60 minutes down, solidify, so that the thickness after its curing is 300 μ m at 160 ℃.
Use the top to be the paste perforation that the rig (top diameter is 0.6mm, and the inclination angle is 60 °) of truncated cone shape will solidify, form the hole that has as the side wall surface of the taper of reflecting part.
Rig preestablishes revolution and penetration depth by mechanical means, near the penetration depth position of setting the time, then reduces revolution, adjusts.And, connect the substrate loop of rig, conducting detector and regulation in advance with lead, if the lid coating in contact substrate loop, rig top, the operation of then above-mentioned conduction detection loop, rig stops the rotation.
After the punch off, carry out silver-plated on the whole surface of solidifying paste by electroplating.
The hole that forms is roughly at the central portion slit shearing, and by the electron microscope observation section, tangent plane is that each limit is the trapezoidal of perfect linearity, and base diameter is 0.6mm, and the inclination angle of side is 60 °.In addition, do not find that almost covering coating is pruned, the degree of depth place that sets of boring a hole to stops.
Claims (5)
1, the manufacture method of light emitting diode base plate, this light emitting diode base plate has the reflecting part that is used to make the light-emitting diode high brightnessization, it is characterized in that:
Forming the substrate surface coating conductive paste in loop,
This conductive paste is heating and curing,
In the position of configuration light-emitting diode, the rig at the top by having truncated cone shape with the conductive paste perforation of above-mentioned curing, thereby forms the space that has as the tapered side wall of reflecting part.
2, the manufacture method of the light emitting diode base plate of putting down in writing according to claim 1 is characterized in that: plate Ag or plating Ni on the surface of aforementioned reflecting part by electroplating.
3, according to the manufacture method of claim 1 or 2 light emitting diode base plates of being put down in writing, it is characterized in that:, use the heat conduction paste that contains thermosetting resin, curing agent and metallic stuffing and form as aforementioned conductive paste.
4, according to the manufacture method of each light emitting diode base plate of putting down in writing in the claim 1～3, it is characterized in that: as aforementioned conductive paste, use contains 1.5～40 weight portion imidazole curing agents and 400～1300 weight portions and is selected from copper powder and the silver-colored conductive paste that is coated with the metallic stuffing more than a kind or 2 kinds of copper powder and forms with respect to 100 weight portion epoxy resin.
5, according to the manufacture method of each light emitting diode base plate of putting down in writing in the claim 1～4, it is characterized in that: when the top of aforementioned rig arrives the loop, detect after the conducting between rig and the loop, stop perforation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-065596 | 2007-03-14 | ||
| JP2007065596A JP2008227295A (en) | 2007-03-14 | 2007-03-14 | Manufacturing method of light emitting diode substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101276876A true CN101276876A (en) | 2008-10-01 |
Family
ID=39845532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101092378A Pending CN101276876A (en) | 2007-03-14 | 2008-03-14 | Manufacturing method of light emitting diode substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2008227295A (en) |
| KR (1) | KR20080084619A (en) |
| CN (1) | CN101276876A (en) |
| TW (1) | TW200845432A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108555542A (en) * | 2018-05-11 | 2018-09-21 | 道真自治县梦幻灯饰有限公司 | A kind of hole lamp processing technology |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4915274B2 (en) * | 2007-04-25 | 2012-04-11 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
| JPWO2010119830A1 (en) * | 2009-04-13 | 2012-10-22 | パナソニック株式会社 | Light emitting diode |
-
2007
- 2007-03-14 JP JP2007065596A patent/JP2008227295A/en active Pending
-
2008
- 2008-03-05 TW TW097107645A patent/TW200845432A/en unknown
- 2008-03-06 KR KR1020080020882A patent/KR20080084619A/en not_active Application Discontinuation
- 2008-03-14 CN CNA2008101092378A patent/CN101276876A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108555542A (en) * | 2018-05-11 | 2018-09-21 | 道真自治县梦幻灯饰有限公司 | A kind of hole lamp processing technology |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200845432A (en) | 2008-11-16 |
| KR20080084619A (en) | 2008-09-19 |
| JP2008227295A (en) | 2008-09-25 |
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