TW200845106A - Chamber-based performance analysis method and system thereof - Google Patents
Chamber-based performance analysis method and system thereof Download PDFInfo
- Publication number
- TW200845106A TW200845106A TW96115858A TW96115858A TW200845106A TW 200845106 A TW200845106 A TW 200845106A TW 96115858 A TW96115858 A TW 96115858A TW 96115858 A TW96115858 A TW 96115858A TW 200845106 A TW200845106 A TW 200845106A
- Authority
- TW
- Taiwan
- Prior art keywords
- machine
- wafer
- station
- performance analysis
- selection
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
200845106 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種晶圓製造系統之設備之效能分析 方法,特別是有關於一種以晶圓疊圖找出具有複數反應室 (chamber)之晶圓設備之效能以及失效分析方法。 【先前技#f】 對於生產半導體產業而言,一片矽晶圓至少要經過數 百道以上的精密處理程序,而其中只要有一道程序處理的 不完美,就會影響到後續的處理過程與產品品質,甚至常 常是晶圓報廢、前功盡棄。一般而言,為了確保晶圓的製 造結果,晶圓產品完成後即進行測試,依據不同的測試條 件將每一晶圓上的每一個晶粒區分為一非缺陷晶粒或缺陷 晶粒,並將測試結果以晶圓圖(CP MAP)的方式表示。請參 見第1A圖,第1A圖係顯示一示範的晶圓圖100。晶圓圖 100中的每一方格表示一個晶粒的測試結果,其係以顏色 及/或錯誤編號來表示錯誤的類型或程度。如圖所示,晶粒 101係以白色且編號為1來表示,代表其為測試正常的晶 粒,而晶粒103以及105係分別以不同顏色且編號為5以 及12來表示,代表不同的測試失效的情形,例如漏電的情 形及程度。通常顏色深以及號碼大的表示缺陷的程度較 高。因此,藉由如此的晶圓圖顯示,可以標記缺陷的晶粒 位置,在後續的處理中便可將這些缺陷晶粒捨棄,以節省 製造成本。200845106 IX. Description of the Invention: Technical Field of the Invention The present invention relates to a method for analyzing the performance of a device for a wafer manufacturing system, and more particularly to a method for finding a complex chamber by using a wafer overlay. The performance of wafer equipment and the method of failure analysis. [Previous technology #f] For the production of the semiconductor industry, a wafer of at least hundreds of precision processing procedures, and as long as there is a process is not perfect, it will affect the subsequent processing and products. Quality, and often even wafer scrapping, has never been abandoned. Generally, in order to ensure the manufacturing result of the wafer, the wafer product is tested after completion, and each crystal grain on each wafer is divided into a non-defective grain or a defective grain according to different test conditions, and The test results are expressed in a wafer map (CP MAP). See Figure 1A, which shows an exemplary wafer map 100. Each square in wafer map 100 represents the test result for a die, which is color or/or error number indicating the type or extent of the error. As shown, the die 101 is shown in white and numbered 1, representing the normal die, while the die 103 and 105 are represented by different colors and numbered 5 and 12, respectively, representing different Test the failure condition, such as the situation and extent of leakage. Usually the color is dark and the number is large, indicating a higher degree of defects. Therefore, by such a wafer map display, the grain positions of the defects can be marked, and these defective crystal grains can be discarded in the subsequent processing to save manufacturing costs.
Clienfs Docket No.:PT. AP-823 TT5s Docket No:0532-A41067-TW/Final/Jasonkung 5 200845106 晶圓上的缺陷晶粒往往導因於不同的製程因素,晶圓 產品製造過程中的每一個製程的處理不當,都可能會造成 晶粒之缺陷,而使得缺陷晶粒無法發揮正常功能。造成缺 陷晶粒的原因必須被加以辨認,才可以提供一個生產流程 中修正調整的優先順序。對於半導體設備或機台的效能分 析可以幫助掌握每一個製程的處理是否恰當。但若要看出 一個機台的效能,例如漏電的百分比,一片晶圓的晶圓圖 並不足以表示整個機台的情形,而是需要針對一段時間内 (例如一天或12小時),該機台所處理的晶圓的測試結果 進行分析,以判別該機台之效能。因此,將一段時間内所 處理過的晶圓的晶圓圖全部豐在一起’形成所謂的晶圓豐 圖(composite wafermap)。晶圓疊圖係用以進行失效的分 析,圖中每一個晶粒的測試結果以一個預定的錯誤編號或 是顏色表示,例如在一漏電測試中,白色部分表示良好的 晶粒’而其他顏色表不測试時有問題的晶粒。措由此晶圓 疊圖,可以瞭解一個機台的失效情形以及失效分佈,進而 對其進行失效控制。 晶圓的製造程序中有各種不同用途的機台,例如蝕刻 或沉積機台等等,而且機台中通常都有數個反應室 (chamber)。當某些機台發生問題致使得到的晶圓圖中有部 分的失效顯示時,要找到是機台中的那個反應室出問題並 不容易。對於具有多個反應室的機台而言,必須——收集 過濾出單一反應室所處理過的晶圓所產生的晶圓圖,再將 所有過濾出的晶圓圖疊起來,產生一以反應室等級Clienfs Docket No.: PT. AP-823 TT5s Docket No: 0532-A41067-TW/Final/Jasonkung 5 200845106 Defective dies on wafers are often caused by different process factors, each in the wafer manufacturing process Improper processing of the process may cause defects in the die, and the defective die may not function properly. The cause of the defective grain must be identified in order to provide a prioritization of corrections in the production process. Performance analysis for semiconductor devices or machines can help you understand the appropriateness of each process. However, if you want to see the performance of a machine, such as the percentage of leakage, the wafer map of a wafer is not enough to represent the whole machine, but it needs to be for a period of time (such as one day or 12 hours). The test results of the wafers processed by the station are analyzed to determine the performance of the machine. Therefore, the wafer maps of the wafers processed over a period of time are all abbreviated together to form a so-called composite wafer map. The wafer overlay is used for failure analysis. The test results of each die in the figure are represented by a predetermined error number or color. For example, in a leakage test, the white part indicates good grain ' while other colors The table does not test for problematic grains. By taking this wafer overlay, you can understand the failure condition of a machine and the failure distribution, and then control the failure. Wafer manufacturing processes have a variety of different applications, such as etching or deposition machines, and there are usually several chambers in the machine. When some machines have problems causing partial failures in the wafer map to be displayed, it is not easy to find the problem in the reaction chamber in the machine. For a machine with multiple reaction chambers, it is necessary to collect and filter the wafer map generated by the wafer processed by the single reaction chamber, and then stack all the filtered wafer patterns to generate a reaction. Room level
Client5s Docket No.:PT. AP-823 TT’s Docket No:0532-A41067-TW/Final/Jasonkung 6 200845106 (chamber-level)為分類的晶圓疊圖,再藉由檢查所有的晶圓 疊圖,來得知發生失效的反應室位置及失效情形。然而, 於現有的測試機台上,每個機台有數百個機台參數 (equipment data,ED)資料,而且每個機台放置關於執行該 晶圓的反應室的編號的資訊係放置於不同的機台參數中, 例如I虫刻機台的反應室的編號資訊置放於機台參數Ciwa 中,而沈積機台的反應室的編號資訊則置放於機台參數 CIWT中。因此,為了得到以反應室等級為分類的晶圓疊 圖,不僅需要手動的方式執行繁雜的篩選以及重複的運 算,且耗費大量的時間,延遲了找出問題所在的時間,也 浪費了部分的製造成本。 弟2圖顯示一示範之流程圖,用以產生以反應室等級 為分類的晶圓疊圖。首先,指定要收集的批次以及晶圓圖 (CP MAP)資料(步驟S210)。其次,收集相關的機台參數(E^) 資料’找出包含有反應室的編號(chamber一id)的參數(步驟 S220)。接著,準備一個具有晶圓以及反應室的編號的對照 表(步驟S230)。這樣的對照表必須手動產生,其將具有每 一晶圓係從那一反應室所進行處理的資訊(藉由機台表數 中的反應室的編號得知)。再利用上述對照表,手動以人工 方式勾選出每一個機台的每一反應室對應的晶圓圖(cj> MAP)資料,再將勾選出的晶圓圖疊在一起以產生每—機& 對應的晶圓疊圖(步驟S240)。請注意,步驟S24〇的動作將 重複多次,例如若某一機台有N個反應室時,則步驟S24() 至少需要重複執行N次。Client5s Docket No.: PT. AP-823 TT's Docket No: 0532-A41067-TW/Final/Jasonkung 6 200845106 (chamber-level) is a classified wafer overlay, and then by checking all the wafer overlays, Know the location and failure of the reaction chamber where the failure occurred. However, on the existing test machine, each machine has hundreds of machine data (ED) data, and each machine places information about the number of the reaction chamber that executes the wafer. Among the different machine parameters, for example, the number information of the reaction chamber of the I-spot machine is placed in the machine parameter Ciwa, and the number information of the reaction chamber of the deposition machine is placed in the machine parameter CIWT. Therefore, in order to obtain a wafer overlay classified by the reaction chamber level, it is not only necessary to perform complicated screening and repeated calculations manually, but also takes a lot of time, delays the time for finding the problem, and wastes part of the time. manufacturing cost. Figure 2 shows an exemplary flow chart for generating a stack of wafers classified by reaction chamber level. First, the lot to be collected and the wafer map (CP MAP) data are specified (step S210). Next, the relevant machine parameter (E^) data is collected to find the parameter containing the number of the reaction chamber (chamber-id) (step S220). Next, a comparison table having the numbers of the wafers and the reaction chamber is prepared (step S230). Such a look-up table must be manually generated, which will have information on the processing of each wafer from that chamber (as known by the number of the reaction chamber in the machine table). Then, using the above comparison table, manually manually select the corresponding wafer map (cj> MAP) data of each reaction chamber of each machine, and then stack the selected wafer maps together to generate each machine &; corresponding wafer overlay (step S240). Please note that the action of step S24〇 will be repeated multiple times. For example, if a certain machine has N reaction chambers, step S24() needs to be repeated at least N times.
Client’s Docket No.:ΡΤ. AP-823 ΤΤ s Docket No:0532-A41067-TW/Final/Jasonkung 7 200845106 舉例來說,請參照第1B圖,假設機台u〇具有4個反 應室C1-C4,且過去12小時内,機台12〇共處理過邓片 晶圓,如第1B圖中的130所示。為了瞭解機台12〇的效 能,將此30片晶圓再依據處理的反應室編號^、& 以及C4 ’分成晶圓組132、134、136以及138,再 這些晶圓組的晶圓圖疊起來,得到對應的晶圓疊圖 142、144以及146。如第1B圖所示,反應室ο以 的晶圓疊® 14G以及144中有較深的顏色,表示機△ m 的反應室以及C3可能發生失效,因此 :0 或排除將晶圓送入反應室C1以及C3。 =進仃修设 則!生失效的反應室C1以及C3,至少需要執行步驟Jo 常不方便。 人卫料元成’非 因此,一般只會考慮以機台等級為分類的晶圓疊圖。 但是,這樣以機台等級為分_粗略晶圓疊圖並無法 掌握每-反應室的狀況,甚至有可能因誤判而浪費更多的 製造成本。舉例來說,假設-個機台冑5個反應室,只有 其中-個反應室失效或故障,而其他4個都正㈣,貝;以 機台等級為分類的晶圓疊圖將會呈現正常的現象。因此, 製造中的晶圓有可能繼續經由此機台中故障的反應室進行 處理,而產生更多的缺陷晶粒。 因此’需要-種可以準確且簡單地定位發生失效或故 障的反應室位置的方法。 【發明内容】Client's Docket No.:ΡΤ. AP-823 ΤΤ s Docket No:0532-A41067-TW/Final/Jasonkung 7 200845106 For example, please refer to Figure 1B, assuming that the machine has four reaction chambers C1-C4, And in the past 12 hours, the machine 12 has processed the Deng wafer, as shown at 130 in Figure 1B. In order to understand the performance of the machine 12, the 30 wafers are further divided into wafer sets 132, 134, 136 and 138 according to the processed reaction chamber numbers ^, & and C4 ', and then wafer maps of these wafer sets Stacked to obtain corresponding wafer overlays 142, 144, and 146. As shown in Figure 1B, the reaction chambers have a darker color in the Wafer Stacks 14G and 144, indicating that the reaction chamber of the machine Δ m and C3 may fail, so: 0 or exclude the wafer from being sent into the reaction. Chambers C1 and C3. = In addition, it is often inconvenient to perform step Jo at least in the reaction chambers C1 and C3 where the failure occurs. People's Guardian Yuancheng is not. Therefore, only wafer overlays classified by machine grade are generally considered. However, this is based on the machine level. The rough wafer overlay does not control the condition of each chamber, and it may even waste more manufacturing costs due to misjudgment. For example, suppose that there are 5 reaction chambers in a machine, only one of the reaction chambers fails or fails, and the other four are positive (four), shell; the wafer overlay classified by machine grade will be normal. The phenomenon. As a result, wafers in manufacturing are likely to continue to be processed through the failed reaction chambers in the machine, resulting in more defective grains. Therefore, there is a need for a method that can accurately and simply locate the location of a reaction chamber in which a failure or malfunction occurs. [Summary of the Invention]
Client’s Docket Νο_:ΡΤ· AP-823 TT’s Docket No:0532-A41067-TW/Final/Jasonkung 8 200845106 有鑑於此,本發明之目的之一即在於提供一種效能分 析方法以及系統,適用於一晶圓製造系統,用以分析晶圓 製造系統中具有複數反應室的機台的效能,藉由晶圓疊 圖,準確且簡單地定位發生失效或故障的反應室位置。 基於上述目的,本發明提供一種反應室效能分析方 法,適用於一晶圓製造系統,其中晶圓製造系統有至少一 站台,該站台有至少一機台,該機台包括複數反應室。反 應室效能分析方法包括下列步驟。提供一既定對照表,其 〔 中既定對照表係記錄有關於機台之一機台參數(ED)資料, 且該機台參數(ED)資料中有一對應之反應室資訊。接著, 由一第一介面輸入欲檢查之至少一站別或一機台選擇。依 據既定對照表以及選取之站別或機台,於第一介面上產生 至少一對應之顯示結果。接著,利用至少一顯示結果,判 別並分析反應室之效能。 本發明另提供一種效能分析系統,用以分析一晶圓製 造系統之效能,其中製造系統中有至少一站台,站台有至 # V 少一機台,機台包括複數反應室。效能分析系統包括至少 一電子裝置以及一伺服器,其中電子裝置提供至少一第一 介面且伺服器提供一既定對照表。第一介面具有一第一區 以及一第二區,且第一區係用以指定至少一檢查項目。既 定對照表係記錄有關於該機台之一機台參數(ED)資料,且 該機台參數(ED)資料中有一對應之反應室資訊。其中,效 能分析系統依據一使用者於第一介面之第一區指定之檢查 項目以及既定對照表,於第一介面之第二區上產生一對應Client's Docket Νο_:ΡΤ· AP-823 TT's Docket No:0532-A41067-TW/Final/Jasonkung 8 200845106 In view of this, one of the objects of the present invention is to provide a method and system for performance analysis for a wafer fabrication A system for analyzing the performance of a machine with multiple reaction chambers in a wafer fabrication system. By stacking wafers, the position of the reaction chamber where failure or failure occurs is accurately and simply located. In view of the above objects, the present invention provides a reaction chamber performance analysis method suitable for use in a wafer fabrication system in which the wafer fabrication system has at least one station having at least one station including a plurality of reaction chambers. The reaction chamber performance analysis method includes the following steps. An established comparison table is provided, wherein [the established comparison table records one machine parameter (ED) data of the machine, and the machine parameter (ED) data has a corresponding reaction room information. Then, at least one station or one machine to be inspected is input by a first interface. At least one corresponding display result is generated on the first interface according to the established comparison table and the selected station or machine. Next, the performance of the reaction chamber is determined and analyzed using at least one display result. The present invention further provides a performance analysis system for analyzing the performance of a wafer manufacturing system, wherein the manufacturing system has at least one station, the station has a #V less than one machine, and the machine includes a plurality of reaction chambers. The performance analysis system includes at least one electronic device and a server, wherein the electronic device provides at least a first interface and the server provides a predetermined look-up table. The first mask has a first zone and a second zone, and the first zone is used to designate at least one inspection item. The established comparison table records one machine parameter (ED) data of the machine, and the machine parameter (ED) data has a corresponding reaction room information. The performance analysis system generates a correspondence in the second area of the first interface according to the inspection item specified by the user in the first area of the first interface and the established comparison table.
Client ?s Docket No.:PT. AP-823 TT5s Docket No:0532-A41067-TW/Final/Jasonkung 9 200845106 檢查項目之顯示結果,並利用顯示結果,判別並分析晶圓 製造系統之效能。 本發明尚提供一種效能分析方法,用以分析一晶圓製 造系統之效能,其中製造系統中有至少一站台,站台有至 少一機台,機台包括複數反應室。此效能分析方法包括下 列步驟。提供一第一介面,其中第一介面具有一第一區以 及一第二區,且第一區係用以指定至少一檢查項目。依據 第一區指定之檢查項目以及一既定對照表,於第二區上產 生一對應該檢查項目之晶圓疊圖。利用晶圓疊圖,判別並 分析晶圓製造系統之效能。其中,既定對照表係記錄有關 於機台之一機台參數(ED)資料,且機台參數(ED)資料中有 一對應之反應室資訊。 為使本發明之上述和其他目的、特徵、和優點能更明 顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳 細說明如下。 【實施方式】 本發明之實施例係關於半導體或晶圓製造機台之效能 分析方法,提供一簡易產生以反應室等級為分類的晶圓疊 圖的方式,可快速地定位出發生問題(失效)的機台或反 應室的位置,以進行後續的失效處理,避免因機台或反應 室失效而造成的額外製造成本。 於一實施例中,藉由提供一與反應室相關的歷史記 錄,使用者或線上操作人員只需指定(選擇)欲進行收集 的站別(例如執行蝕刻的蝕刻站、執行沈積的沈積站以及Client ?s Docket No.: PT. AP-823 TT5s Docket No: 0532-A41067-TW/Final/Jasonkung 9 200845106 Examine the display results of the project and use the displayed results to identify and analyze the performance of the wafer fabrication system. The present invention also provides a method of performance analysis for analyzing the performance of a wafer fabrication system wherein there are at least one station in the manufacturing system, at least one station on the platform, and the machine includes a plurality of reaction chambers. This method of performance analysis includes the following steps. A first interface is provided, wherein the first mask has a first area and a second area, and the first area is used to designate at least one inspection item. A stack of wafers to be inspected is generated on the second zone based on the inspection items specified in the first zone and an established comparison table. Identify and analyze the performance of the wafer fabrication system using wafer overlays. Among them, the established comparison table records one machine parameter (ED) data related to the machine, and there is a corresponding reaction room information in the machine parameter (ED) data. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] Embodiments of the present invention relate to a method for analyzing a performance of a semiconductor or a wafer manufacturing machine, and provide a method for easily generating a wafer overlay classified by a reaction chamber level, which can quickly locate a problem (a failure) The location of the machine or reaction chamber for subsequent failure handling to avoid additional manufacturing costs due to machine or reaction chamber failure. In one embodiment, by providing a history record associated with the reaction chamber, the user or online operator only has to specify (select) the station to be collected (e.g., an etching station that performs etching, a deposition station that performs deposition, and
Client’s Docket Νο·:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 10 200845106 執行金屬化的金屬化站等等)或機台,便可得到想要的機 台等級為分類或反應室等級為分類的晶圓疊圖,再利用這 些晶圓疊圖進行失效的分析,有效的針對失效的反應室或 機台進行處置。此外,於另一實施例中,本發明提供一疊 圖分析介面,於疊圖分析介面的一區利用樹狀列表的選單 區顯示所有的站別、機台及或/反應室資訊以供使用者點 選,同時於另一區則隨使用者的選擇,切換欲顯示的晶圓 疊圖,使得使用者可以很容易切換顯示不同晶圓疊圖,可 以更快速地定位發生問題的位置,也可增加找出反應室差 異的能力,以確保製程的準確性。 第3圖顯示一依據本發明實施例之反應室效能分析方 法300之流程圖,適用於具有複數反應室的至少一製造機 台(如第1B圖所示的機台120)的晶圓製造系統中。其中, 晶圓製造系統具有至少一站台,且其中一站台包含此製造 機台。於步驟S310,提供一既定對照表。此既定對照表係 儲存於一工程資料倉儲中,其係記錄有關於晶圓製造系統 中每一機台之一機台參數資料,且此機台參數資料中有一 對應之反應室資訊。舉例來說,假設一蝕刻機台的反應室 的編號資訊置放於機台參數CIWA中,則既定對照表中將 記錄有此蝕刻機台的機台參數CIWA,以於後續的處理中 找出其對應的反應室編號資訊。關於此既定對照表的詳細 格式請參見以下第5圖之說明。接著,於步驟S320,使用 者指定要收集的批次以及晶圓圖資料,並於步驟S330,指 定(選擇)要收集的站別或機台。其中,步驟S320以及步Client's Docket Νο·:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 10 200845106 Metallized metallization station, etc.) or machine, you can get the desired machine level The classification or reaction chamber grade is a classified wafer overlay, and these wafer overlays are used for failure analysis, which is effectively disposed of for a failed reaction chamber or machine. In addition, in another embodiment, the present invention provides a stack analysis interface for displaying all station, machine and/or reaction chamber information for use in a region of the overlay analysis interface in a region of the overlay analysis interface. At the same time, in another area, the user selects the wafer overlay to be displayed, so that the user can easily switch between different wafer overlays, and the position where the problem occurs can be located more quickly. The ability to find differences in the reaction chamber can be increased to ensure process accuracy. 3 is a flow chart showing a process chamber performance analysis method 300 according to an embodiment of the present invention, which is applicable to a wafer fabrication system of at least one manufacturing machine having a plurality of reaction chambers (such as the machine table 120 shown in FIG. 1B). in. Wherein, the wafer manufacturing system has at least one station, and one of the stations includes the manufacturing machine. In step S310, a predetermined comparison table is provided. The established comparison table is stored in an engineering data warehouse, which records information about one of the machine parameters of each machine in the wafer manufacturing system, and there is a corresponding reaction room information in the parameter data of the machine. For example, if the number information of the reaction chamber of an etching machine is placed in the machine parameter CIWA, the machine parameter CIWA of the etching machine will be recorded in the predetermined comparison table to find out in the subsequent processing. Its corresponding reaction chamber number information. See the description of Figure 5 below for the detailed format of this established comparison table. Next, in step S320, the user specifies the lot to be collected and the wafer map data, and in step S330, the station or machine to be collected is specified (selected). Wherein, step S320 and step
Client’s Docket Νο·:ΡΤ. AP-823 TT?s Docket No:0532-A41067-TW/Final/Jasonkung 11 200845106 驟S330係透過一圖形化介面提供所需的輸入。關於此圖形 化介面之使用以及細節請參見第4圖以及第6圖之說明。 於本實施例中,使用者可以指定(選擇)站別以產生以機 台專級為为類’或才曰疋(選擇)機台以產生以反應室等級 為分類的晶圓疊圖。依據選取之站別或機台,可以得到一 在製品(wafer-in-process,WIP)資料,此在製品(WIp)資料 係用以表示某一晶圓係於那一時間點由那一機台所進行處 理。關於此在製品(WIP)資料的詳細格式請參見以下第5 圖之說明。接著,於步驟S340,再依據上述的既定對照表、 批次資料、晶圓圖資料以及站別或機台選擇,於圖形化介 面上產生對應的晶圓疊圖。最後,於步驟S350,便可利用 晶圓疊圖,判別並分析每個反應室之效能。 請參見第5圖,係顯示依據本發明實施例之既定對照 表510、在製品(wafer-in-process,WIP)資料520以及晶圓 反應室編號對照表530。其中,既定對照表510至少包括 有一站別、一機台以及一對應有反應室編號之機台參數搁 位,用以表示每一站別中每一機台的反應室編號係置放於 那一機台參數中。舉例來說,如圖所示,對機台cdA1() 而言,其反應室編號係置放於機台參數CIW0中,而對機 台EEG10而言,其反應室編號係置放於機台參數ClWl 中。亦即,可以藉由機台EEG10的機台參數CIW1中的反 應室編號得知晶圓係由機台EEG10的那一反應室所進;^于 處理的。由於每一機台的反應室編號係置放於那一機台泉 數中是固定的’而且可以事先知道’因此可以事先收集這Client's Docket Νο·:ΡΤ. AP-823 TT?s Docket No:0532-A41067-TW/Final/Jasonkung 11 200845106 Step S330 provides the required input through a graphical interface. See Figure 4 and Figure 6 for the use and details of this graphical interface. In this embodiment, the user can designate (select) a station to generate a machine class as a class or a machine to generate a wafer overlay classified by the reaction chamber level. According to the selected station or machine, a wafer-in-process (WIP) data can be obtained. The WIP data is used to indicate that a wafer is attached to that machine at that time. The station handles it. Please refer to the description in Figure 5 below for the detailed format of this WIP document. Then, in step S340, corresponding wafer overlays are generated on the graphical interface according to the predetermined comparison table, batch data, wafer map data, and station or machine selection. Finally, in step S350, the wafer overlay can be used to discriminate and analyze the performance of each reaction chamber. Referring to Figure 5, there is shown a comparison table 510, a wafer-in-process (WIP) data 520, and a wafer reaction chamber number comparison table 530 in accordance with an embodiment of the present invention. The predetermined comparison table 510 includes at least one station, one machine, and a machine parameter position corresponding to the number of the reaction chamber, indicating that the reaction chamber number of each machine in each station is placed there. In a machine parameter. For example, as shown in the figure, for the machine cdA1(), the reaction chamber number is placed in the machine parameter CIW0, and for the machine EEG10, the reaction chamber number is placed on the machine. The parameter is in ClWl. That is, it can be known that the wafer is processed by the reaction chamber of the machine EEG10 by the reaction chamber number in the machine parameter CIW1 of the machine EEG10. Since the number of the reaction chamber of each machine is fixed in the number of the machine, it can be fixed and can be known in advance. Therefore, this can be collected in advance.
Client 5s Docket No.:PT. AP-823 TT5s Docket No:0532-A41067-TW/Final/Jasonkung 12 200845106 些資訊,產生此既定對照表510以供使用。在製品(WIP) 資料520中至少包括有一晶圓編號、一批號、一時間以及 一處理機台欄位,用以表示某一晶圓係於那一時間點由那 一機台所進行處理。舉例來說,如圖所示,對批號1且晶 圓編號為1以及3的晶圓而言,其係分別於時間T1以及 T3時由機台C1所處理,而對批號1且晶圓編號為2的晶 圓而言,其係於時間T2時由機台C2所處理,以此類推。 晶圓-反應室編號對照表530係依據既定對照表510以及在 製品(WIP)資料520所產生,其至少包括有一批號、一晶圓 編號、一時間、一處理機台以及一反應室編號攔位’用以 表示每一站別中每一機台的每一反應室編號對應的反應室 所處理過的晶圓歷史記錄,以及晶圓編號XX的晶圓係於 那一時間由那一機台的那一反應室所進行處理。舉例來 說,如圖所示,對批號1且晶圓編號為4、10以及16的晶 圓而言,其係分別於時間τ卜T2以及T3時由機台CDA10 的反應室編號Cl、C2以及C3的反應室所進行處理,以此 類推。請注意,於本實施例中,記錄有反應室相關歷史紀 錄之晶圓-反應室編號對照表530係依據既定對照表510以 及在製品(WIP)資料520所自動產生’因此使用者不需要記 憶任何機台參數或收集其他資料,非常方便。 第4圖顯示一依據本發明實施例之疊圖分析介面使用 方法400之流程圖。首先,於步驟S410,提供一圖形化分 析介面。接著,於步驟S420,於圖形化分析介面之樹狀選 單區,輸入一站別或機台的選擇項目。於步驟S430,於圖Client 5s Docket No.: PT. AP-823 TT5s Docket No: 0532-A41067-TW/Final/Jasonkung 12 200845106 Some information is generated to generate this established comparison table 510 for use. The work in process (WIP) data 520 includes at least one wafer number, a batch number, a time, and a processing station field to indicate that a wafer is processed by that machine at that point in time. For example, as shown, for wafers with lot number 1 and wafer numbers 1 and 3, they are processed by machine C1 at times T1 and T3, respectively, and for lot number 1 and wafer number. For a wafer of 2, it is processed by machine C2 at time T2, and so on. The wafer-reaction chamber number comparison table 530 is generated according to the established comparison table 510 and the work in process (WIP) data 520, and includes at least a batch number, a wafer number, a time, a processing machine, and a reaction chamber number block. The bit history is used to indicate the wafer history recorded by the reaction chamber corresponding to each reaction chamber number of each machine in each station, and the wafer number of the wafer number XX is at that time. The reaction chamber of the station is processed. For example, as shown in the figure, for the wafers of lot number 1 and wafer numbers 4, 10, and 16, they are the reaction chamber numbers Cl, C2 of the machine CDA10 at time T2 and T3, respectively. And the processing of the reaction chamber of C3, and so on. Please note that in the present embodiment, the wafer-reaction room number comparison table 530 in which the history of the reaction chamber is recorded is automatically generated according to the established comparison table 510 and the WIP data 520. Therefore, the user does not need to memorize. Any machine parameters or other information is very convenient. Figure 4 is a flow chart showing a method 400 for using the overlay analysis interface in accordance with an embodiment of the present invention. First, in step S410, a graphical analysis interface is provided. Next, in step S420, a selection item of a station or a machine is input in a tree menu area of the graphical analysis interface. In step S430, in the figure
Client’s Docket Νο·:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 13 200845106 形化分析介面之顯示結果區,顯示對應上述選擇站別戈* 台的晶圓疊圖。請參見第6圖,係顯示一依據本發明1 = 例之疊圖分析介面600之示意圖。疊圖分析介面6〇〇至$ 具有一選單區610以及一顯示結果區620。其中,選 610更具有一樹狀列表614 ,其將站別選項615、機台選工 616以及反應室選項617以樹狀方式呈現,供使用者=項 欲收集的站別、機台及/或反應室之選擇。其中,樹狀=李 614之每一節點的母節點係為站台選項615,站台選項61$ 的子郎點則顯示其對應的機台選項616,機台選項616的 子節點則顯示其對應的反應室選項617。其中,樹狀列表 614的内容係隨著列表選擇區612的列表選擇按鈕612二 以及612-2而有不同的樹狀結構。當列表選擇按钮612_2 ([機台])被按下(選取)時,表示要進行機台等級為分 類的晶圓豐圖’因此樹狀列表614只顯示站別選項615及 機台選項616,不會出現反應室選項617,亦即反應室選項 617將被隱藏。當列表選擇按鈕612-1 ([反應室])被按下 (選取)時,表示要進行反應室等級為分類的晶圓疊圖, 因此樹狀列表區614除了顯示站別選項615及機台選項 616之外,還會在每一機台選項616之下顯示其對應的反 應至選項617。顯不結果區620用以顯示一相應於選單區 610的選擇項目的晶圓疊圖622。此外,疊圖分析介面600 更具有一疊圖切換單元630,用以切換不同的選項的晶圓 疊圖顯示於顯示結果區620。 舉例來說,如第6圖所示,樹狀列表614中顯示了機Client's Docket Νο·:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 13 200845106 The display result area of the analytic analysis interface displays the wafer overlay corresponding to the above-mentioned selection station. Referring to Figure 6, there is shown a schematic diagram of an overlay analysis interface 600 in accordance with the present invention. The overlay analysis interface 6〇〇 to $ has a menu area 610 and a display result area 620. The selection 610 further has a tree list 614, which presents the station option 615, the machine selection 616, and the reaction room option 617 in a tree manner for the user to select the station, the machine, and/or the item to be collected. The choice of reaction chamber. Wherein, the parent node of each node of the tree=Li 614 is the station option 615, the sub-role point of the station option 61$ displays its corresponding machine option 616, and the child nodes of the machine option 616 display its corresponding Reaction chamber option 617. The content of the tree list 614 has a different tree structure along with the list selection buttons 612 and 612-2 of the list selection area 612. When the list selection button 612_2 ([machine]) is pressed (selected), it indicates that the machine level is to be classified as a wafer map 'so the tree list 614 only displays the station option 615 and the machine option 616. The reaction chamber option 617 will not occur, ie the reaction chamber option 617 will be hidden. When the list selection button 612-1 ([reaction chamber]) is pressed (selected), it indicates that the wafer layout to be classified as the reaction chamber level is to be performed, so that the tree list area 614 displays the station option 615 and the machine table. In addition to option 616, its corresponding response to option 617 is also displayed under each machine option 616. The display result area 620 is used to display a wafer overlay 622 corresponding to the selected item of the menu area 610. In addition, the overlay analysis interface 600 further has a stack switching unit 630, and a wafer overlay for switching different options is displayed in the display result area 620. For example, as shown in Figure 6, the tree is displayed in the tree list 614.
Client’s Docket No.:ΡΤ. AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 14 200845106 台4有4個反應室選項,假設欲分析機台4的效能,則反 應室卜反應室2、反應室3以及反應室4的選擇項目都被 勾選,表不要顯示這4個反應室等級為分類的晶圓疊圖622 於顯示結果區620上。因此,顯示結果區62〇上將先顯示 反應室1對應的晶圓疊圖622。接著,可利用疊圖切換單 元630,將顯示結果區62〇上的晶圓疊圖切換至下一順位 的反應室2之晶圓疊圖622,或切換至前一順位的反應室4 之晶圓疊圖622”。由於將晶圓疊圖與機台及/或反應室選 擇的切換放在-起,可以容易地分析所有反應室的晶圓疊 圖’使用2需繁雜的操作’即可得到想要收集的晶圓疊 圖,可以簡單且快速地根據晶圓疊圖的結果,了解機台中 每一反應室的效能,並準確地於反應室或機台壞掉時,快 速地找到壞掉的機台或反應室,降低因壞掉的機台或反應 室而產生停機的時間。 舉例來說,假設機台4具有4個反應室丨_4,且其中反 應至2發生失效。若以機台等級為分類的晶圓疊圖進行分 析,由於機台4中其餘3個反應室1、3以及4皆正常,因 此平均的結果將顯示為正常。如此一來,可能造成晶圓仍 然送至機台4的反應室2進行處理,而造成無謂的壞片。 依據本發明實施例之方法,利用反應室等級為分類的晶圓 疊圖進行分析,就可以觀察到反應室1、3以及4得到的晶 圓豐圖顯示正常的白色區域,而反應室2得到的晶圓疊圖 顯不部分較丨未的顏色’因此’可以知道反應室2發生失效。 於是,便可進行失效排除或避免將晶圓送至反應室2進行Client's Docket No.:ΡΤ. AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 14 200845106 Table 4 has 4 reaction chamber options, assuming that you want to analyze the performance of the machine 4, the reaction chamber reaction chamber 2. The selection items of the reaction chamber 3 and the reaction chamber 4 are all checked, and the table does not display the four wafer chamber levels as the classified wafer overlay 622 on the display result area 620. Therefore, the wafer overlay 622 corresponding to the reaction chamber 1 will be displayed first in the display result area 62. Then, the overlay switching unit 630 can be used to switch the wafer overlay on the display result area 62〇 to the wafer overlay 622 of the next-order reaction chamber 2, or to the crystal of the reaction chamber 4 of the previous order. Round stack 622". Due to the switching of the wafer overlay and the machine and/or reaction chamber selection, the wafer overlay of all the reaction chambers can be easily analyzed. Get the stack of wafers you want to collect, you can easily and quickly understand the performance of each reaction chamber in the machine according to the results of the wafer overlay, and accurately find the fault when the reaction chamber or machine is broken. The machine or reaction chamber that is dropped reduces the downtime caused by the broken machine or reaction chamber. For example, assume that the machine 4 has four reaction chambers 丨_4, and the reaction to 2 fails. The wafer overlays classified by the machine level are analyzed. Since the other three reaction chambers 1, 3 and 4 in the machine 4 are normal, the average result will be normal. As a result, the wafer may still be caused. Delivered to the reaction chamber 2 of the machine 4 for processing, resulting in unnecessary According to the method of the embodiment of the present invention, by analyzing the wafer overlay of the classification of the reaction chamber, it can be observed that the wafers obtained by the reaction chambers 1, 3 and 4 display a normal white area, and The wafer stack obtained in the reaction chamber 2 is partially inferior to the color of the color. Therefore, it can be known that the reaction chamber 2 has failed. Thus, the failure can be eliminated or the wafer can be sent to the reaction chamber 2 for removal.
Client’s Docket No.:ΡΤ. AP-823 TT,s Docket No:0532-A41067-TW/Final/Jasonkung 15 200845106 處理。 此外,由於可以快速的產生晶圓疊圖以及提供結構化 的反應室資訊顯示,使得計算時間大量縮短,不僅強化了 找出反應室差異性的能力,也可增強其他應用(例如反應室 共通性分析(chamber commonality))之效能分析能力。 本發明亦提供一種用以執行上述效能分析方法3〇〇之 效月b刀析糸統。睛參見弟7圖’係顯示一依據本發明實施 例之效成分析糸統700之示意圖,用以分析一晶圓製造系 統之效能’其中製造系統中有至少一站台,該站台有至= 一機台,且機台包括複數反應室。效能分析系統7q〇中至 少包括一工程資料倉儲伺服器710以及一電子裝置72〇(例 如,一個人電腦或終端主機)。電子裝置72〇提供至少一聂 圖分析介面701,工程資料倉儲伺服器71〇則提供—既定 對照表702。其中,疊圖分析介面7〇1以及既定對照表7⑽ 係與上述之疊圖分析介面600以及既定對照表51〇相似, 細節在此省略。其中,上述之在製品(WIp)資料52〇以及曰 圓-反應室編號對照表530亦可同時儲存於工程資料倉^ (EDA)伺服器710中。第8圖顯示一依據本發明實^例 之效能分析環境之示意圖。如圖所示,此效能分析環产 除了包括上述之效能分析系統7〇〇之外,另包括了二= 載入伺服器730、一製造執行系統(MES)74〇以及—晶 試系統75G ’其中’資料載人伺服器73()係與製造執n 統(MES) 74G以及晶圓測試系統75() _接,再麵接至二 分析系統7GG之工程資料倉错伺服器71()。晶圓測試系^Client’s Docket No.:ΡΤ. AP-823 TT,s Docket No:0532-A41067-TW/Final/Jasonkung 15 200845106 Processing. In addition, because of the rapid generation of wafer overlays and the provision of structured reaction chamber information displays, the computational time is greatly reduced, which not only enhances the ability to find chamber differences, but also enhances other applications (eg, reaction chamber commonality). Analysis of the ability of analysis (chamber commonality). The present invention also provides a method for performing the above-described performance analysis method. Figure 7 shows a schematic diagram of an effect analysis system 700 according to an embodiment of the present invention for analyzing the performance of a wafer manufacturing system in which at least one station is in the manufacturing system, and the station has a = one A machine table, and the machine includes a plurality of reaction chambers. The performance analysis system 7q includes at least one engineering data storage server 710 and an electronic device 72 (e.g., a personal computer or an end host). The electronic device 72 provides at least one map analysis interface 701, and the engineering data storage server 71 provides a predetermined look-up table 702. The overlay analysis interface 7〇1 and the established comparison table 7(10) are similar to the above-described overlay analysis interface 600 and the established comparison table 51〇, and the details are omitted here. The above-mentioned work item (WIp) data 52〇 and the round-reaction room number comparison table 530 may also be stored in the engineering data warehouse (EDA) server 710 at the same time. Figure 8 is a diagram showing a performance analysis environment in accordance with an embodiment of the present invention. As shown in the figure, this performance analysis loop includes, in addition to the above-described performance analysis system, a second = load server 730, a manufacturing execution system (MES) 74, and a crystal test system 75G. The 'data manned server 73 () is connected to the manufacturing system (MES) 74G and the wafer testing system 75 (), and then connected to the engineering data warehouse server 71 () of the second analysis system 7GG. Wafer test system ^
Client's Docket No.:PT. AP-823 TT^ Docket No:0532-A41067-TW/Final/Jasonkung 16 200845106 750產生每個晶圓的測試結果,製造執行系統(MES) 74〇則 提供上述之在製品(WIP)資料以及機台參數(ED)資料。這些 晶圓測試結果、在製品(WIP)資料以及機台參數(ED)資料再 載入至資料載入伺服器730。資料載入伺服器73()接收上 述資料後,產生上述既定對照表702,接著此既定對照表 702再儲存至工程資料倉儲(£:1)评)伺服器71〇。於是,工程 資料倉儲(EDW)伺服器710中便包括此既定對照表7〇2。 於此實施例中,如前述,效能分析系統7〇〇中的電子裝置 : 720可依據一使用者於電子裝置72〇中之疊圖分析介面 之選單區所指定之檢查項目以及工程資料倉儲伺服器 中之既定對照表702,由工程資料倉儲伺服器71〇 ^收集 相關的在製品(WIP)資料以產生一反應室之歷史記錄資 訊,並收集晶圓測試系統750中得到的指定晶圓的測試、= 果,於疊圖分析介面701之顯示結果區上產生—對應 查項目之晶圓疊圖。使用者便可利用產生的晶圓疊圖,判 別並分析晶圓製造系統之效能。 # V 上述說明提供數種不同實施例或應用本發明之不同方 法。實例中的特定裝置以及方法係用以幫助闡釋本發明之 主要精神及目的,當然本發明不限於此。Client's Docket No.: PT. AP-823 TT^ Docket No: 0532-A41067-TW/Final/Jasonkung 16 200845106 750 produces test results for each wafer, Manufacturing Execution System (MES) 74〇 provides the above-mentioned work in progress (WIP) data and machine parameter (ED) data. These wafer test results, work in process (WIP) data, and machine parameter (ED) data are then loaded into the data load server 730. After the data loading server 73() receives the above data, the predetermined comparison table 702 is generated, and then the predetermined comparison table 702 is stored in the engineering data storage (£:1) evaluation server 71. Thus, the engineering data repository (EDW) server 710 includes this established comparison table 7〇2. In this embodiment, as described above, the electronic device in the performance analysis system 7: 720 can be based on the inspection item specified by the user in the menu area of the overlay analysis interface in the electronic device 72, and the engineering data storage servo. In the established comparison table 702, the related work in process (WIP) data is collected by the engineering data storage server 71 to generate a history information of the reaction chamber, and the specified wafers obtained in the wafer testing system 750 are collected. The test, = result, is generated on the display result area of the overlay analysis interface 701 - a wafer overlay corresponding to the search item. The resulting wafer overlay can be used to identify and analyze the performance of the wafer fabrication system. # V The above description provides several different embodiments or different methods of applying the invention. The specific devices and methods in the examples are intended to help explain the main spirit and purpose of the invention, and the invention is not limited thereto.
因此,雖然本發明已以較佳實施例揭露如上,然其並 非用以限定本發明,任何熟悉此項技藝者,在不脫發 明之精神和範圍内,當可做些許更動與潤飾,因此本發= 之保護範圍當視後附之申請專利範圍所界定者為準。X 【圖式簡單說明】Therefore, the present invention has been described above by way of a preferred embodiment, and is not intended to limit the invention, and any one skilled in the art can make some changes and refinements without departing from the spirit and scope of the invention. The scope of protection of the hair = the scope of the patent application is subject to the definition of the patent application. X [Simple description of the diagram]
Clienfs Docket No.:PT. AP-823 TT’s Docket No:〇532-A41067-TW/Final/Jasonkung 17 200845106 第1A圖係顯示一示範的晶圓圖示意圖。 第1Β圖係顯示一示範的晶圓疊圖之產生方式示意圖。 第2圖係顯示一示範的產生以反應室等級為分類的晶 圓疊圖之流程圖。 第3圖係顯示一依據本發明實施例之反應室效能分析 方法之流程圖。 第4圖係一依據本發明實施例之疊圖分析介面之使用 方法之流程圖。 第5圖係顯示一依據本發明實施例之反應室資料之示 意圖。 第6圖係顯示一依據本發明實施例之疊圖分析介面之 示意圖。 第7圖係顯示一依據本發明實施例之效能分析系統之 示意圖。 第8圖係顯示一依據本發明實施例之效能分析環境之 示意圖。 【主要元件符號說明】 100〜晶圓圖; 101、103、105〜晶粒; 120〜機台; C1-C4〜反應室; 130、132、134、136、138〜晶圓組; 140、142、144、146〜晶圓疊圖; S210-S240〜步驟;Clienfs Docket No.: PT. AP-823 TT’s Docket No: 〇532-A41067-TW/Final/Jasonkung 17 200845106 Figure 1A shows an exemplary wafer diagram. The first diagram shows a schematic diagram of the generation of an exemplary wafer overlay. Figure 2 is a flow chart showing an exemplary generation of a wafer overlay classified by reaction chamber level. Figure 3 is a flow chart showing a method for analyzing the efficiency of a reaction chamber in accordance with an embodiment of the present invention. Figure 4 is a flow diagram of a method of using the overlay analysis interface in accordance with an embodiment of the present invention. Figure 5 is a schematic illustration of the reaction chamber data in accordance with an embodiment of the present invention. Figure 6 is a schematic diagram showing a overlay analysis interface in accordance with an embodiment of the present invention. Figure 7 is a diagram showing a performance analysis system in accordance with an embodiment of the present invention. Figure 8 is a diagram showing a performance analysis environment in accordance with an embodiment of the present invention. [Main component symbol description] 100~ wafer map; 101, 103, 105~ die; 120~ machine; C1-C4~ reaction chamber; 130, 132, 134, 136, 138~ wafer set; 140, 142 , 144, 146~ wafer overlay; S210-S240~ steps;
Client5s Docket No.:PT. AP-823 TT?s Docket No:0532-A41067-TW/Final/Jasonkung , < 200845106 S310-S350〜步驟; S410-S430〜步驟; 510〜既定對照表; 520〜在製品(WIP)資料; 530〜晶圓-反應室編號對照表; 600〜疊圖分析介面; 610〜選單區; 612〜列表選擇區; 612-1、612-2〜列表選擇按鈕; 614〜樹狀列表; 615〜站別選項; 616〜機台選項; 617〜反應室選項; 620〜顯示結果區; 622〜晶圓疊圖; 630〜疊圖切換單元; 700〜效能分析系統; 701〜疊圖分析介面; 702〜既定對照表; 710〜工程資料倉儲(EDA)伺服器; 720〜電子裝置; 730〜資料載入伺服器; 740〜製造執行系統; 750〜晶圓測試系統。Client5s Docket No.: PT. AP-823 TT?s Docket No: 0532-A41067-TW/Final/Jasonkung, < 200845106 S310-S350~Step; S410-S430~Step; 510~ Established Comparison Table; 520~ Product (WIP) data; 530 ~ wafer - reaction room number comparison table; 600 ~ overlay analysis interface; 610 ~ menu area; 612 ~ list selection area; 612-1, 612-2 ~ list selection button; 614 ~ tree List of items; 615~ station option; 616~ machine option; 617~ reaction room option; 620~ display result area; 622~ wafer overlay; 630~ stack switching unit; 700~ performance analysis system; Figure analysis interface; 702 ~ established comparison table; 710 ~ engineering data storage (EDA) server; 720 ~ electronic device; 730 ~ data loading server; 740 ~ manufacturing execution system; 750 ~ wafer test system.
Client’s Docket No.:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 19Client’s Docket No.:ΡΤ· AP-823 ΤΤ^ Docket No:0532-A41067-TW/Final/Jasonkung 19
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW96115858A TW200845106A (en) | 2007-05-04 | 2007-05-04 | Chamber-based performance analysis method and system thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW96115858A TW200845106A (en) | 2007-05-04 | 2007-05-04 | Chamber-based performance analysis method and system thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200845106A true TW200845106A (en) | 2008-11-16 |
Family
ID=44822811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96115858A TW200845106A (en) | 2007-05-04 | 2007-05-04 | Chamber-based performance analysis method and system thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200845106A (en) |
-
2007
- 2007-05-04 TW TW96115858A patent/TW200845106A/en unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6823496B2 (en) | Physical design characterization system | |
CN113139078B (en) | Control chart generation method and electronic equipment | |
GB2567968A (en) | Wafer test system | |
JPH1167853A (en) | Wafer map analysis auxiliary system and wafer map analysis method | |
KR102275221B1 (en) | Data processing method, data processing device and data processing program | |
TWI822262B (en) | Data processing method, data processing apparatus, data processing system, and computer program products | |
CN103854127A (en) | Information processing apparatus and method | |
JP6648511B2 (en) | Support device, support method, and program | |
CN116686076A (en) | System and method for evaluating reliability of semiconductor die package | |
TW201937384A (en) | Data processing method, data processing apparatus, data processing system, and recording medium having recorded therein data processing program | |
JP2020009815A (en) | Inspection method, inspection system, and program | |
CN111106028A (en) | Real-time monitoring method for semiconductor chip testing process | |
TW200845106A (en) | Chamber-based performance analysis method and system thereof | |
JP4998154B2 (en) | Manufacturing failure factor analysis support device | |
WO2022215446A1 (en) | Image determination device, image determination method, and program | |
JP2005338906A (en) | Defect detection method for substrate and defect detection system therefor | |
JPH07235617A (en) | Semiconductor device | |
JP6185492B2 (en) | Individual component backward traceability and semiconductor device forward traceability | |
CN115980541A (en) | Data processing method, data processing device, data testing device, data processing equipment and data testing equipment, and storage medium | |
JP2007311581A (en) | Process control method, and process control system | |
JP2005235130A (en) | Data trace system of manufacture/development information | |
JP2001155979A (en) | Manufacturing information control system | |
CN111401578A (en) | Equipment point inspection management method and device and computer readable storage medium | |
JP2006351667A (en) | Information management system | |
CN101345183A (en) | Reaction chamber performance analysis method and correlative performance analysis system |