TW200840429A - Circuit board structure having buffer layer and method for fabricating the same - Google Patents

Circuit board structure having buffer layer and method for fabricating the same Download PDF

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Publication number
TW200840429A
TW200840429A TW96110112A TW96110112A TW200840429A TW 200840429 A TW200840429 A TW 200840429A TW 96110112 A TW96110112 A TW 96110112A TW 96110112 A TW96110112 A TW 96110112A TW 200840429 A TW200840429 A TW 200840429A
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Taiwan
Prior art keywords
layer
circuit board
buffer layer
electrical connection
buffer
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TW96110112A
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Chinese (zh)
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TWI355868B (en
Inventor
Wen-Heng Hu
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Phoenix Prec Technology Corp
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Publication of TWI355868B publication Critical patent/TWI355868B/en

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Abstract

A circuit board structure having a buffer layer is disclosed. The structure comprises a circuit board and a buffer layer. The surface of the circuit board includes a plurality of conductive pads and a solder mask. The solder mask has a plurality of openings to expose the conductive pads. The buffer layer corresponds to the conductive pads and is disposed inbetween the conductive pads and the surface of the circuit board. The present invention further comprises a method for fabricating the same. The buffer layer of the present invention has a buffer effect to avoid the break-down of the electricity of the circuit board structure.

Description

200840429 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種具有緩衝層之電路板結構及盆製作 方法,尤指-種適用於與電子元件電性連接,而避^產生 5 斷裂失效之具有緩衝層之電路板結構及其製作方、去 【先前技術】 、 ㈣電子產業的蓬勃發展,電子產品亦逐漸進入多功 能、高性能的研發方向。為滿足半導體封裝件高積隼产 10 (Integratl〇n)以及微型化(心1伽nzation)的封裝要求,、提: 多數主被動元件及線路連接之電路板,亦逐衡由雙層板演 變成多層板,以使在有限的空間下,藉由層間連接技術 (她物α __1〇η)擴大電路板上可利用的佈線面積而 配合高電子密度之積體電路(Integrated咖叫需求。 15 卜般半導體裝置之製程,首先係由晶片載板製造業 者生產適用於該半導體裝置之晶片載板,如電路板或導線 *之後再將3玄些晶片載板交由+導體封裝業者進行置 晶、壓模、以及植球等製程。 半V體封裝結構是將晶片黏貼於電路板頂面,進行打 20線接合(Wlreb〇ndlng),或將晶片以覆晶接合(Fllpchlp)方 式14包路板電性連接。再於電路板之背面植以錫球,以電 性連接至如印刷電路板之外部電子裝置。其中,覆晶接合 式的電路板表面結構請參考圖1A及1B。如圖1A所示,其包 括電路板1 1 ’邊電路板1 1的表面具有複數電性連接墊12 5 200840429 焊層13,該防焊層13之_顯露出 連接墊丨2。再者,如圖1B所示,於電性連接墊12 =:::料凸塊14(solderbump),最後此一焊料凸塊14再 π由、烊(reficrn soldering)而可與一晶片接合。 “,此種結構之電路板,熱衝料(即冷卻或 口 由於晶片的漲縮速度較電路板慢且焊料凸塊因溫 10 h化產生剪應力,電路板會產生⑽,而使得焊 "凸塊與電性連接墊之間的接合面產生斷裂的現象,此等 見象使付電路板與晶片間的電性連接結構斷裂失效。故 =電路板與晶片間之電性連接之品f,強化電路板電性 、、°構的可罪度係為一欲積極解決的課題。 【發明内容】 有鑑於此,本發明係提供一種具有緩衝層之電路板結 Μ構二包括:一電路板以及一緩衝層。電路板表面具有複數 個電性連接墊及一防焊層,此防焊層具有複數個開孔以顯 露出此等電性連接墊。緩衝層係配置對應於此等電性連接 墊’且介於電性連接墊與電路板表面之間。 _在本發明中,電路板包括有介電層及内層線路,且緩 2〇衝層係形成於該電路板表面之介電層上,其中,緩衝層相 車乂於介電層,較不易被腐蝕液粗化。在此,電路板所包括 的介電層例如可為選自ABF(Ajin〇m〇t〇 Build_Up Film)、雙 順丁醯二酸醯亞胺/三氮阱(此職14如心1^_;]81[)、聯 一苯環 丁二烯(benZ〇Cyl〇butene ; BCB)、液晶聚合物(Liquid 6 200840429200840429 IX. Description of the Invention: [Technical Field] The present invention relates to a circuit board structure having a buffer layer and a method of manufacturing a pot, and particularly to an electrical connection with an electronic component, and avoiding a 5 break. The failure of the circuit board structure with buffer layer and its maker, go to [previous technology], (4) the booming development of the electronics industry, electronic products have gradually entered the direction of multi-functional, high-performance research and development. In order to meet the packaging requirements of semiconductor package 10 (Integratl) and miniaturization, the majority of active and passive components and circuit-connected circuit boards are also evolving from two-layer boards. Multi-layer boards are used to expand the integrated circuit area of high electron density (Integrated coffee calling requirements) by enlarging the available wiring area on the circuit board by the interlayer connection technique (here α __1〇η) in a limited space. The process of the semiconductor device is firstly produced by a wafer carrier manufacturer to produce a wafer carrier board suitable for the semiconductor device, such as a circuit board or a wire*, and then the 3x wafer carrier board is placed by a +conductor packager for crystallization. Processes such as stamping, ball-planting, etc. The semi-V body package structure is to adhere the wafer to the top surface of the circuit board, perform 20-wire bonding, or package the wafer in a flip-chip bonding manner (Fllpchlp). The board is electrically connected. The solder ball is implanted on the back of the circuit board to electrically connect to an external electronic device such as a printed circuit board. For the surface structure of the flip chip bonded circuit board, please refer to FIG. 1A and FIG. 1A The surface of the circuit board 1 1 includes a plurality of electrical connection pads 12 5 200840429 solder layer 13 , and the solder resist layer 13 reveals the connection pads 2 . Furthermore, as shown in FIG. 1B In the electrical connection pad 12 =::: material bump 14 (solderbump), and finally the solder bump 14 is further π, 烊 (reficrn soldering) can be bonded to a wafer. ", the circuit of this structure Plate, hot material (ie cooling or port due to the wafer's rate of shrinkage is slower than the board and the solder bumps are sheared due to temperature 10 h, the board will produce (10), and the solder ≎ The joint between the pads is broken, and the appearance of the electrical connection between the circuit board and the wafer is broken. Therefore, the electrical connection between the circuit board and the wafer is f, and the electrical properties of the circuit board are strengthened. In view of the above, the present invention provides a circuit board structure having a buffer layer, comprising: a circuit board and a buffer layer. The surface of the circuit board has a plurality of electrical connection pads and a solder mask layer. The solder layer has a plurality of openings to expose the electrical connection pads. The buffer layer configuration corresponds to the electrical connection pads 'and between the electrical connection pads and the surface of the circuit board. _ In the present invention, The circuit board includes a dielectric layer and an inner layer line, and the buffer layer is formed on the dielectric layer on the surface of the circuit board, wherein the buffer layer is entangled in the dielectric layer and is less likely to be roughened by the etching liquid. Here, the dielectric layer included in the circuit board may be, for example, selected from the group consisting of ABF (Ajin〇m〇t〇Build_Up Film), bis-succinimide bismuth imide/trinitrogen trap (this job 14 is as heart 1^_ ;]81[), benzoxene butadiene (benZ〇Cyl〇butene; BCB), liquid crystal polymer (Liquid 6 200840429

Crystal Polymer)、聚亞醯胺(p〇lyimide ; ρι)、聚乙烯醚 (P〇iy(Phenylene ether))、聚四氟乙烯(p〇iy (_卜 f—thy丨ene))、芳香尼龍(Aramide)、環氧樹脂以及玻璃 纖維所組成之群組之-者。較佳地,介電層可為abf。而 緩衝層可使用高分子材料,較佳地可為具芳香基的石夕氧高 分子。例如下式1所示: 分子式1 ch3 ch3Crystal Polymer), polyamidamine (p〇lyimide; ρι), polyvinyl ether (P〇iy (Phenylene ether)), polytetrafluoroethylene (p〇iy (_bu f-thy丨ene)), aromatic nylon The group of (Aramide), epoxy resin and glass fiber. Preferably, the dielectric layer can be abf. Further, the buffer layer may be a polymer material, and preferably an anthracene group. For example, the following formula 1 is shown: Formula 1 ch3 ch3

1010

20 —(Ar —(S丨卜 〇一寺一 )m—)「 ch3 ch3 接著…二稱1 ™ —焊料凸塊或-金屬 ^ 係可形成於該些電性連接執车z . 一 連接墊表面。在此,焊料凸 金所形成之群組之—者二:銀、錄、金、翻及其合 使用的材料/較佳地,可為錫。而金屬接著層 便用的材枓例如可為有機 /鈀/金以及錫锡銀、鎳、鎳/金、鎳 锡:所組成之群組之一者。較佳地,可為錫。 在本發明的電路板中,係 板。 』钓一層或多層電路 依據上述本發明之具 由下述但不限於此/、、"電路板結構,例如可 Μ氏於此之步驟製作: 路板。接著,於師完成 ’&供—待完成之電 衝層。然後,於此 、面形成一圖案化之緩 部分之金屬層係對舞:缓:::板表面形成-金屬層’且 屬層的待完成之雷跋此生 、 ▲之,於形成有此金 應緩衝層之處係形成複數 貝路出金屬層以作為電 7 200840429 5 Γ 10 15 20 性連接墊。 前述本發明之電路板結構的製作 電路板表面形成圖案化之緩衝層的’:於此待完成之 或是利用微影製程的方式形成。此工列如為網版印刷 括有介電層及内層線路,錢衝:寺完成之電路板包 板表面之介電層上,其t,緩=㈣成於待完成之電路 被腐蝕液粗化。 a目較於介電層,較不易 前述本發明之電路板結構的 料係為銅、鎳、絡、鈦、銅/鉻合金以及::丄:屬層的材 群組之-者。較佳地,可為銅。 ’·〜金所組成之 别述本發明之電路拓纟士 成緩衝層後且形成金屬層:,係:=中’復包括於形 將此料成之電路板與緩衝層表面粗化。仃杻化製程’以 前述本發明之電路板結構的製作方 層之前,係先於此待完成之電路板表面二= 衣H⑽此待完成之電路板表面粗化。 杻化 完成前述本發明之電路板結::電性連接墊表面形成i料凸塊或者是金= =谭料凸塊形成的方式例如可為印刷或電鏡之妾 而金屬接著層形成的方式利可為無電電料方式。方式。 的尺ΐ外,在本發明中,緩衝層的尺寸係大於電性連接墊 此1使用本發明之具有緩衝層之電路板結構,由於 心"相較於介電層’較不易被腐姓液粗化,故可利用粗 20084042920 —(Ar —(S丨卜〇一寺一)m—) “ch3 ch3 followed by... 2 said 1 TM — solder bumps or —metals ^ can be formed on the electrical connections z. A connection pad Here, the group formed by the solder bumps is two: silver, gold, gold, turn, and the materials used thereof, preferably tin, and the metal layer is used for example. It may be one of a group consisting of organic/palladium/gold and tin-silver-silver, nickel, nickel/gold, nickel-tin: preferably tin. In the circuit board of the present invention, a tie plate. The fishing layer or the multi-layer circuit is manufactured according to the above-mentioned invention by the following, but not limited to, the circuit board structure, for example, the steps of the board: the board is completed. Then, the teacher completes the '& The electric layer to be completed. Then, the surface of the surface forms a patterned metal layer to the dance: slow::: the surface of the board forms a metal layer and the layer of the layer is to be completed, ▲ Wherein, in the formation of the gold buffer layer, a plurality of shell-out metal layers are formed as electricity 7 200840429 5 Γ 10 15 20 The surface of the circuit board structure of the present invention is formed by forming a patterned buffer layer on the surface of the circuit board: or is formed by a lithography process. The screen includes a dielectric layer and a dielectric layer. The inner layer circuit, Qian Chong: on the dielectric layer on the surface of the circuit board board board completed by the temple, its t, slow = (4) is formed in the circuit to be completed is roughened by the corrosive liquid. A mesh is less difficult than the dielectric layer The material of the circuit board structure of the invention is copper, nickel, complex, titanium, copper/chromium alloy and:: 丄: a group of materials of the genus layer. Preferably, it may be copper. The circuit of the present invention is formed after the buffer layer is formed into a buffer layer, and the metal layer is formed by: = zhong ' complex is included in the shape of the circuit board and the surface of the buffer layer is roughened. Before the fabrication of the circuit board structure of the present invention, the surface of the circuit board to be completed is roughened on the surface of the circuit board to be completed. The circuit board of the present invention is completed: The surface of the connection pad forms an i-bump or a gold== tan bump is formed, for example. In the present invention, the size of the buffer layer is larger than that of the electrical connection pad, and the metal layer may be formed by printing or electron microscopy. The circuit board structure with the buffer layer can be used as the core "compared to the dielectric layer, which is less susceptible to coarsening of the rot

化製程使得緩衝;I 力鲜Μ、層或緩衝層與電性連接墊的結合 义 例如,先粗化介電層 ° 則緩衝層與電性連接㈣^再开/成緩衝層與電性連接塾, 合力,或先开Γ:么:的結合力小於緩衝層與介電層的結 再於缓徐Μ % a及㈣層後’粗化介電層及緩衝声’ 再於緩衝層上形成電性連 友衝層 "私層、緩衝層血雷料奎j Ο 10 15 社人力妒丨、电性連接墊之整體結構具有 ::力叙小的緩衝空間,以釋放應力,可減少鹿… 丈干料凸塊與電性連接執弓 Μ 木中於 斷裂失效。因〜,明之具有緩 乂生=間而 化產品的可靠度。 9又电路板結構可強 【實施方式】 以下係藉由特定的具體實施例說明本發明 式,熟習此技藝之人士可由本說明書所揭示之内容 了解本發明之其他優點與功效。本發 工易地 的具體實施例加以施行或應用,本說明書中:=也:同 可基於不同觀點與應用,在不棒離本發明之=員= 種修飾與變更。 下進仃各 本發明之實施例中該些圖式均為簡化之示 些圖式僅顯示與本發明有關之元件,兌所顯亍:_亥 實:實施時之態樣,其實際實施時之元件數::= 例為—選擇性之設計,且其元件佈局型態可能更複Γ 請同時參考圖2Α請以及 20 200840429 " 2D係為形成具有緩衝層之電路板結構流程剖視圖,圖3Α至 3D係為圖2Α至2D中形成電性連接墊之局部放大流程上視 圖。 首先,請同時參考圖2Α以及圖3Α,提供一待完成之電 5 路板20,此待完成之電路板20係可為二層或多層的待完成 之電路板20,其内部包含有介電層201以及内層線路(圖中 未示)。在此,介電層201例如可為選自ABF (Ajinomoto Build-up Film)、雙順丁酉藍二酸酿亞胺/三氣味(Bismaleimide triazine ; BT)、聯二苯環 丁二稀(benzocylobutene ; BCB)、 10 液晶聚合物(Liquid Crystal Polymer)、聚亞醯胺(Polyimide ; PI)、聚乙稀醚(Poly (phenylene ether))、聚四氟乙稀(Poly (tetra-fluoro- ethylene))、芳香尼龍(Aramide)、環氧樹脂以 及玻璃纖維所組成之群組之一者,在本實施例中係使用 ABF。此待完成之電路板20表面係可以網版印刷的方式形 15 成一圖案化的緩衝層21,亦可利用微影技術形成圖案化之 緩衝層21,亦即先於此待完成之電路板20表面先全面形成 & 緩衝層21,再進行曝光以及顯影的製程以形成此圖案化的 緩衝層21。而在圖3A中,係為含有此圖案化後之缓衝層21, 其所形成之圖案於待完成之電路板20上的局部放大上視 20 圖。此外,所使用的缓衝層21之材料係可為具芳香基的石夕 氧高分子。例如下式1所示: 分子式1 ch3 ch3The process makes the buffer; I combine the bonding of the layer or the buffer layer with the electrical connection pad. For example, first roughen the dielectric layer, then the buffer layer and the electrical connection (4) ^ re-open / into the buffer layer and electrical connection塾, resultant force, or first opening: What is the bonding strength of the buffer layer and the dielectric layer is less than Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗Electric Lianyou Punch Layer " Private layer, buffer layer blood mine material Kui j Ο 10 15 The overall structure of the human mantle and electrical connection pad has:: Force small buffer space to release stress, can reduce deer ... The dry bumps and the electrical connections are broken. Because of the ~, Mingzhi has the reliability of the product. 9 Further, the circuit board structure can be strong. [Embodiment] The present invention will be described by way of specific embodiments, and those skilled in the art can understand other advantages and effects of the present invention from the disclosure of the present specification. Specific embodiments of the present invention are implemented or applied. In the present specification: = also: the same may be based on different viewpoints and applications, and may not be modified or changed from the present invention. In the embodiments of the present invention, the drawings are simplified. The drawings show only the components related to the present invention, and the indications are obvious: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The number of components::= The example is - selective design, and its component layout type may be more complicated. Please refer to Figure 2 以及 please and 20 200840429 " 2D is a cross-sectional view of the process of forming a circuit board with a buffer layer, 3Α to 3D is a partial enlarged process top view in which the electrical connection pads are formed in FIGS. 2A to 2D. First, please refer to FIG. 2A and FIG. 3A simultaneously to provide a circuit board 20 to be completed. The circuit board 20 to be completed may be two or more layers of the circuit board 20 to be completed, and the inside thereof contains a dielectric. Layer 201 and inner layer lines (not shown). Here, the dielectric layer 201 may be, for example, selected from the group consisting of ABF (Ajinomoto Build-up Film), Bismaleimide triazine (BT), and benzocylobutene (BT). BCB), 10 Liquid Crystal Polymer, Polyimide (PI), Poly (phenylene ether), Poly (tetra-fluoro-ethylene) One of the groups consisting of aromatic polyamide, epoxy resin, and glass fiber, in this embodiment, ABF is used. The surface of the circuit board 20 to be completed can be formed into a patterned buffer layer 21 by screen printing. The patterned buffer layer 21 can also be formed by using lithography technology, that is, the circuit board 20 to be completed first. The surface is first formed into a & buffer layer 21, followed by exposure and development processes to form the patterned buffer layer 21. In Fig. 3A, there is shown a partially enlarged top view of the patterned buffer layer 21, which is formed on the circuit board 20 to be completed. Further, the material of the buffer layer 21 to be used may be an amphoteric oxygen polymer having an aromatic group. For example, the following formula 1 is shown: Formula 1 ch3 ch3

/ I I —(Ar — (Si-〇-Si—)m—)n—/ I I —(Ar — (Si-〇-Si—)m—)n—

I I ch3 ch3 10 200840429 在此,本實施例中,將緩衝層21形成於此待完成之+路 板表面之前,係可先於此待完成之電路板加表面利^ 蝕液如高錳酸鉀(_4)進行一粗化製程,再形成此緩衝: 2卜或^ ’可在緩衝層21形成於此待完成之電路板^後: 5再利用高錳酸鉀(KMn〇4)進行粗化製程。其中,緩衝層u ^材:的特性與此待完成之電路板20表面的介電層 較而έ,具有較不易被腐蝕液粗化的特性。故可利用粗化 、技術’於後續製程於緩衝層上形成電性連接墊時,使得緩 r 衝層與介電層或緩衝層與電性連接墊的結合力變小,例 1〇如,先粗化介電層再形成緩衝層與電性連接塾,則緩衝層 與電性連接墊的結合力小於緩衝層與介電層#結合力 先形成介電層及緩衝層後,粗化介電層及緩衝層,再於緩衝 層上形成電性連接墊,則緩衝層與介電層的結合力小於緩 衝層與電性連接墊的結合力,故受到熱衝擊產生應力時介 電層、緩衝層與電性連接塾之整體結構具有結合力較小的 緩衝空間,以釋放應力。 〔 接著,請、同時參考圖2Β以及圖3Β,於此待完成之電路 板20表面幵^成金屬層22,且部分之金屬層^係對應於緩 衝層21表面。此金屬層22可利用電鍛的方式形成。而此金 20屬層22可使用的材料為銅、錄、絡、欽、銅/絡合金以及錫 /釓口至所組成之群組之一者。在本實施例中係使用銅。 然後請同時參考圖2C以及圖3C,於形成有此金屬層 22的待完成之電路板2G表面塗佈形成-防焊層23。此防焊 層23可使用的材料為綠漆。 11 200840429 最後’凊同時參考圖2D以及圖3D,於此防焊層23在對 應緩衝層21之處以曝光以及顯影之方法形成複數個開孔 231並顯露出的金屬層22以作為電性連接墊221。在此,與 電性連接墊221相對應緩衝層21,其尺寸係大於電性連接墊 5 ^21的尺寸。完成前述的製程後,係完成本發明之一電路板 2的結構。II ch3 ch3 10 200840429 Here, in this embodiment, before the buffer layer 21 is formed on the surface of the +-way plate to be completed, a surface etching liquid such as potassium permanganate may be added to the circuit board to be completed. (_4) Perform a roughening process, and then form this buffer: 2 or ^ ' can be formed on the buffer layer 21 after the circuit board to be completed: 5 and then use potassium permanganate (KMn〇4) for roughening Process. Among them, the characteristics of the buffer layer u ^ material are relatively thinner than the dielectric layer on the surface of the circuit board 20 to be completed, and have characteristics that are less likely to be roughened by the etching liquid. Therefore, the roughening and the technology can be used to form an electrical connection pad on the buffer layer in the subsequent process, so that the bonding force between the buffer layer and the dielectric layer or the buffer layer and the electrical connection pad becomes small, for example, First, the dielectric layer is roughened to form a buffer layer and an electrical connection layer, and the bonding force between the buffer layer and the electrical connection pad is smaller than that of the buffer layer and the dielectric layer #, and then the dielectric layer and the buffer layer are formed first. The electrical layer and the buffer layer, and the electrical connection pad is formed on the buffer layer, the bonding force between the buffer layer and the dielectric layer is less than the bonding force between the buffer layer and the electrical connection pad, so the dielectric layer is subjected to stress caused by thermal shock, The buffer structure and the overall structure of the electrical connection have a buffer space with less bonding force to release stress. [Next, please refer to FIG. 2A and FIG. 3Β at the same time, the surface of the circuit board 20 to be completed is formed into a metal layer 22, and a part of the metal layer corresponds to the surface of the buffer layer 21. This metal layer 22 can be formed by electric forging. The material of the gold 20 layer 22 can be used for one of the group consisting of copper, lanthanum, lanthanum, chin, copper/coalloy and tin/garland. Copper is used in this embodiment. Then, referring to FIG. 2C and FIG. 3C, the surface of the circuit board 2G to be completed on which the metal layer 22 is formed is coated with a solder resist layer 23. The material that can be used for this solder resist layer 23 is green lacquer. 11 200840429 Finally, while referring to FIG. 2D and FIG. 3D, the solder resist layer 23 forms a plurality of openings 231 and exposes the metal layer 22 as an electrical connection pad at the corresponding buffer layer 21 by exposure and development. 221. Here, the buffer layer 21 corresponding to the electrical connection pad 221 has a size larger than that of the electrical connection pad 5^21. After the completion of the foregoing process, the structure of the circuit board 2 of one of the present invention is completed.

C 10 15 20 因此,如圖2D所示,本發明可提供經由前述之方法但 不限於此之具有緩衝層之電路板結構,其包括:一電路板2 以及一緩衝層21。電路板2表面具有複數個電性連接墊 及一防焊層23,此防焊層23具有複數個開孔23以顯露出此 寺電性連接墊22卜緩衝層21係配置對應於此等電性連㈣ 221,且介於電性連接墊221與電路板2表面之間。 然而,請參考圖4,復可在此電路板2中之電性連接墊221 =表面形成—焊料凸塊31’進而可與—外部電子^ ^示)電性連接’此外部電子元件例如可為晶片。在此,形 :焊軸31的方式係可利用網版印刷或是電鑛的方式形 而此¥料凸塊31使用之材料例如為銅、錫、錯、銀、 、〃、金、鉑及其合金所形成之 一 使用錫。 者,在本實施例係 於性遠= 參考圖5,不使用如圖4所示之焊料凸塊31’而 3二,表面形成一金屬接著層32,此金屬接著層 如為!二:外部電子元件電性連接’此外部電子元件例 方:^、形成此金屬接著層32的方式係為無電電f的 形成。此金屬接著層32使㈣材料係為有機保焊齊^ 12 200840429 錫、銀、鎳、鎳/金、鎳/鈀/金以及錫/鉛所組成之群組之— 者,在本實施例中係使用錫。 綜上所述,本發明是將電性連接墊與電路板上之 ::料之間形成一緩衝層,以將電性連接墊隔開。此緩: “佳地可為一具芳香基的矽氧高分子、以及與介電材 相較而言具有較不易被粗化的特性。本發明之具有緩衝層 ^:板結構中,當電路板經由烊料凸塊或金屬接著# ^子凡件(例如晶片)電性連接時,由於緩衝層相 10 15 20 不易被腐㈣粗化,故可利用粗化製程使得緩衝 曰η介電層或緩衝層與電性連接墊的結合力變小 熱衝擊產生應力時,使介電層、緩衝層與電性連接又塾 =結構具有結合力較小的緩衝空間,可減少應 =中於焊料凸塊與電性連接墊間或金屬接 電_ 接塾間而斷裂失效。因,b,本發明之 = 結構可強化產品的可靠度。 打s之电路板 上述實施例僅係為了方便說明而舉例而已,本 主張之杻利範圍自應以申請專利範; 於上述實施例。 而非僅限 【圖式簡單說明】 圖1A至1B係習知之雷敗化主ία # 兒路板表面結構剖示圖 緩衝層之電 圖2A至2D係本發明一如 ^ 較佳實施例之具有 路板結構流程剖示圖。 圖3 A至3 D係分別為對_ 之 巧對應於圖2A至2D之含有緩衝層 13 200840429C 10 15 20 Therefore, as shown in Fig. 2D, the present invention can provide a circuit board structure having a buffer layer via the foregoing method, but is not limited thereto, and includes: a circuit board 2 and a buffer layer 21. The surface of the circuit board 2 has a plurality of electrical connection pads and a solder mask layer 23, and the solder resist layer 23 has a plurality of openings 23 to expose the temple electrical connection pads 22, and the buffer layer 21 is configured to correspond to the electricity. The connection (4) 221 is between the electrical connection pad 221 and the surface of the circuit board 2. However, please refer to FIG. 4, the electrical connection pad 221 in the circuit board 2 = surface formation - the solder bump 31' can be electrically connected to the external electronic device. For the wafer. Here, the shape of the welding shaft 31 can be formed by screen printing or electric ore, and the material used for the material bump 31 is, for example, copper, tin, silver, silver, ruthenium, gold, platinum, and the like. One of the alloys formed uses tin. In this embodiment, the distance is far lower. Referring to Fig. 5, the solder bumps 31' as shown in Fig. 4 are not used, and the surface is formed with a metal back layer 32. The metal back layer is as follows! 2: Electrical connection of external electronic components 'This external electronic component is an example: ^, the formation of this metal backing layer 32 is the formation of no electric power f. The metal back layer 32 is such that the (four) material is a group consisting of tin, silver, nickel, nickel/gold, nickel/palladium/gold, and tin/lead, in this embodiment. Use tin. In summary, the present invention forms a buffer layer between the electrical connection pads and the material on the circuit board to separate the electrical connection pads. The slowness: "Good ground can be an aromatic-based helium-oxygen polymer, and has characteristics that are less likely to be roughened compared with dielectric materials. The present invention has a buffer layer: a plate structure, when the circuit When the board is electrically connected via a bump or a metal, such as a wafer, since the buffer layer 10 15 20 is not easily roughened (four), the roughening process can be used to buffer the dielectric layer. Or the bonding force between the buffer layer and the electrical connection pad becomes small, and the thermal shock generates stress, so that the dielectric layer, the buffer layer and the electrical connection are further 塾=the structure has a buffer space with less bonding force, and the solder should be reduced to be in the solder. The failure between the bump and the electrical connection pad or the metal connection is broken. Therefore, b, the structure of the invention can enhance the reliability of the product. The circuit board of the above embodiment is for convenience of explanation. For example, the scope of the claims is intended to apply for a patent; in the above embodiments, and not limited to [simplified description of the drawings] Figs. 1A to 1B are conventionally known as the surface structure of the ία The electrograms 2A to 2D of the diagram buffer layer are the same as the present invention. The preferred embodiment having a flow path cross-sectional plate structure shown in FIG. FIGS. 3 A to 3 D _ based on the clever respectively correspond to FIGS. 2A to 2D of a buffer layer 13200840429

圖4係本發明一較佳實施例之在具有緩衝層之電路板 結構表面形成焊料凸塊剖示圖。 圖5係本發明一較佳實施例之在具有緩衝層之電路板 結構表面形成金屬接著層剖示圖。 【主要元件符號說明】Figure 4 is a cross-sectional view showing the formation of solder bumps on the surface of a circuit board having a buffer layer in accordance with a preferred embodiment of the present invention. Figure 5 is a cross-sectional view showing the formation of a metal back layer on the surface of a circuit board structure having a buffer layer in accordance with a preferred embodiment of the present invention. [Main component symbol description]

12 電性連接墊 H 焊料凸塊 20 待完成之電路板 21 緩衝層 221 電性連接墊 231 開孔 32 金屬接著層 1412 Electrical connection pads H Solder bumps 20 Board to be completed 21 Buffer layer 221 Electrical connection pads 231 Opening holes 32 Metal back layers 14

Claims (1)

200840429 十、申請專利範圍: h ~種具有緩衝層之電路板結構,包括: 一電路板,:i:车工日上 /、表面具有複數個電性連接墊及一防焊 ,曰,Β μ垾層具有複數個開孔以顯露出該些電性連接墊; 、爰衡層,係配置對應於該些電性連接墊 些電性連接墊與該電路板表面之間。 且介於該 r 10 15 20 2·如巾請專利範圍第旧所述之具有緩衝層之電路板 矣, *|J" 1 y ^ U亥笔路板包括有介電層及内層線路,且該緩 衝層係形成於該電路板表面之介電層上,纟中,緩衝層相 較於介電層,較^被腐飿液粗化。 ^ 3·如申請專利範圍第2項所述之具有緩衝層之電路板 結構’其中,’亥緩衝層係可為具芳香基的矽氧高分子。 女申明專利範圍弟2項所述之具有緩衝層之電路板 °籌’、中°亥;丨電層係選自ABF(Ajinomoto Build-up Film)、雙順丁醯二酸醯亞胺/三氮阱⑼随 iazine,BT)、聯—苯環丁 二烯(benz〇Cyi〇butene ; Bcb)、 液日日 χκ 合物(Liquid Crystal Polymer)、聚亞醯胺(p〇iyimide ; PI)、聚乙烯醚(P〇ly(phenyiene ether))、聚四氟乙烯(p〇iy (tetra-fluoroethylene))、芳香尼龍(Aramide)、環氧樹脂以及 玻璃纖維所組成之群組之一者。 5·如申請專利範圍第1項所述之具有緩衝層之電路板 結構,其中,該緩衝層的尺寸係大於該電性連接墊的尺寸。 6 ·如申晴專利範圍第1項所述之具有緩衝層之電路板 15 200840429 結構’復包括一焊料几% " & t枓凸塊,係形成於該些電性連接墊表面。 7·如申請專利範圍第1項所述之具有緩衝層之電路板 結構’復包括-金屬接著層,係形成於該些電性連:塾ί 面0 并槿8豆^ Γ專利範圍第7項所述之具有緩衝層之電路板 :Θ金屬接著層使用的材料係可為有機保焊劑、 去、艮、鎳、鎳/金、鎳/le/金以及錫/錯所組成之群组之一 #。 10 15 20 叫二如:請專:J範圍第1項所述之具有緩衝層之電路板 ° 〃,5亥電路板係為二層或多層電路板。 包括瓜一種具有緩衝層之電路板結構之製作方法,其步驟 提供一待完成之電路板·, ===路板表面形成-圖案化之緩衝層; 二:;二板表面形成-金屬層,且部分之金屬 層係對應於该緩衝層表面;以及 於形成有該金屬層之兮彡主+二、 焊層,該防焊層在對應該:衝::電路板表面形成-防 顯露出$ + M 心Μ、、%層之處係形成複數個開孔並 *負路出5亥金屬層以作為電性連接墊。 如申請專利範圍第10項所述 緩衝層使用的材料係可為具芳香基的錢高分子 该 待6 m巾請專利範_1G項所述之製作W,其中,該 -π成之书路板表面係利用網版印… 之緩衝層。 勺方式形成該圖案化 16 10 15 20 200840429 / —13.如申請專利範圍第ι〇項所述之製作方法, 待完成之電路板表面係 以 衝層。 係利用U衫製程以形成該圖案化之缓 14.如申請專利範圍第咖員所述之 待完成之電路板包括有介電層及内層線路 、°亥 形成於該待完成之電路板表面之介;層:緩衝層係 相較於介電層,較不易被腐㈣粗化。-’緩衝層 …5:申請專利範圍第1〇項所述之製作方法,其中,該 、、友⑴、尺寸係大於該電性連接墊的尺寸。 人麗巾請專·㈣1G項所述之製作方法,1中,該 金屬層的材料係為銅、辞 ,、 金所組成之群組之一者 欽、銅/絡合金以及錫/錯合 丨7·如申料利_第_料之㈣方法 形成該缓衝層後且形成該金屬層前,係形成進行-粗化f 私’以將心U成之電路板與該緩衝層表面粗化。 护成18二申/專利範圍第1〇項所述之製作方法,復包括於 之前係先於該待完成之電路板表面進行一粗 衣王L將该待完成之電路板表面粗化。 圍第1G項所述之製作方法,復包括於 3冤性連接墊表面形成一焊料凸塊。 20·如申請專利範圍第19項所述之製作方法,立中,係 利用印刷之方式形成該焊料凸塊。 ” 21·如中4專㈣圍第19項所述之製 利用電鍍之方式形成該焊料凸塊。 ,、甲係 17 200840429 22. 如申請專利範圍第10項所述之製作方法,復包括於 該電性連接墊表面形成一金屬接著層。 23. 如申請專利範圍第22項所述之製作方法,其中,係 利用無電電鍍之方式形成該金屬接著層。 18200840429 X. Patent application scope: h ~ a circuit board structure with a buffer layer, including: a circuit board, i: the day of the work, / the surface has a plurality of electrical connection pads and a solder mask, 曰, Β μ垾The layer has a plurality of openings to expose the electrical connection pads; and the balance layer is disposed between the electrical connection pads of the electrical connection pads and the surface of the circuit board. And the circuit board having a buffer layer as described in the patent application scope, *|J" 1 y ^ Uhai pen board includes a dielectric layer and an inner layer line, and The buffer layer is formed on the dielectric layer on the surface of the circuit board. In the crucible, the buffer layer is coarser than the dielectric layer. ^3. A circuit board structure having a buffer layer as described in claim 2, wherein the 'Hi-buffer layer' is a fluorinated polymer having an aromatic group. The female board stated that the circuit board with the buffer layer described in the second paragraph of the patent scope is °F, Zhonghehai; the electric layer is selected from ABF (Ajinomoto Build-up Film), bissuccinimide bismuth imide/three Nitrogen trap (9) with iazine, BT), benzidine, biphenylbutene (Bcb), liquid crystal polymer, polypyridamine (p〇iyimide; PI), One of a group consisting of P〇ly (phenyiene ether), p〇iy (tetra-fluoroethylene), aromatic polyamide (Aramide), epoxy resin, and glass fiber. 5. The circuit board structure having a buffer layer according to claim 1, wherein the buffer layer has a size larger than a size of the electrical connection pad. 6. The circuit board with a buffer layer as described in claim 1 of the Shenqing patent scope 15 200840429 The structure includes a solder % "& t枓 bump formed on the surface of the electrical connection pads. 7. The circuit board structure having a buffer layer as described in claim 1 of the patent application includes a metal-bonding layer formed on the electrical connection: 塾ί face 0 and 槿8 bean ^ Γ patent range 7 The circuit board with buffer layer described in the item: the material used for the base metal back layer may be a group consisting of organic solder resist, de-ruthenium, niobium, nickel, nickel/gold, nickel/le/gold, and tin/wrong. One#. 10 15 20 叫二如: Please specify: the circuit board with buffer layer mentioned in item 1 of J range ° 〃, 5 hai circuit board is a two-layer or multi-layer circuit board. The invention comprises a method for manufacturing a circuit board structure with a buffer layer, the steps of which provide a circuit board to be completed, === a buffer layer formed on the surface of the road surface - patterned; 2: a surface of the second board is formed - a metal layer, And a part of the metal layer corresponds to the surface of the buffer layer; and in the main layer + the second solder layer formed with the metal layer, the solder resist layer is formed in the corresponding: punch:: surface of the circuit board - anti-exposure $ + M Μ, , % layer is formed into a plurality of openings and * negative 5 ohm metal layer as an electrical connection pad. The material used in the buffer layer according to claim 10 of the patent application scope may be a money-based polymer having an aromatic group, which is to be produced by the method described in Patent No. _1G, wherein the book of the -π成成The surface of the board is made up of a buffer layer of screen printing. The pattern is formed by a spoon method. 16 10 15 20 200840429 / -13. As described in the patent application, the surface of the circuit board to be completed is a layer. The U-shirt process is used to form the patterning delay. 14. The circuit board to be completed as described by the café of the patent application includes a dielectric layer and an inner layer circuit, and is formed on the surface of the circuit board to be completed. Layer: The buffer layer is less susceptible to corrosion (4) than the dielectric layer. The manufacturing method according to the first aspect of the invention, wherein the friend, (1), and the size are larger than the size of the electrical connection pad. Please refer to the production method described in (1) 1G. In 1st, the material of the metal layer is one of the group consisting of copper, rhetoric, and gold. Chin, copper/coalloy, and tin/mismatch 7. After the method of forming the buffer layer and forming the metal layer, the method of forming and roughening is performed to roughen the surface of the circuit board and the buffer layer. . The manufacturing method described in the first aspect of the invention is incorporated in the first aspect of the circuit board to be completed before the roughening of the surface of the circuit board to be completed. The manufacturing method described in the item 1G includes forming a solder bump on the surface of the 3-layer connection pad. 20. The manufacturing method according to claim 19, wherein the solder bump is formed by printing. 21· The solder bumps are formed by electroplating according to the method described in Item 19 of the 4th (4), respectively. , A series 17 200840429 22. The manufacturing method described in claim 10 of the patent application is included in The surface of the electrical connection pad forms a metal backing layer. The method of manufacturing according to claim 22, wherein the metal back layer is formed by electroless plating.
TW96110112A 2007-03-23 2007-03-23 Circuit board structure having buffer layer and me TWI355868B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476844B (en) * 2008-11-18 2015-03-11 Unimicron Technology Corp Method for fabricating conductive bump and circuit board structure with the same
CN106973496A (en) * 2017-05-09 2017-07-21 上海天马微电子有限公司 A kind of flexible PCB and display device
TWI705536B (en) * 2018-11-16 2020-09-21 欣興電子股份有限公司 Carrier structure and manufacturing method thereof
CN113022046A (en) * 2021-02-26 2021-06-25 武汉华星光电半导体显示技术有限公司 Composite material, preparation method thereof and display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476844B (en) * 2008-11-18 2015-03-11 Unimicron Technology Corp Method for fabricating conductive bump and circuit board structure with the same
CN106973496A (en) * 2017-05-09 2017-07-21 上海天马微电子有限公司 A kind of flexible PCB and display device
CN106973496B (en) * 2017-05-09 2019-06-11 上海天马微电子有限公司 A kind of flexible circuit board and display device
TWI705536B (en) * 2018-11-16 2020-09-21 欣興電子股份有限公司 Carrier structure and manufacturing method thereof
CN113022046A (en) * 2021-02-26 2021-06-25 武汉华星光电半导体显示技术有限公司 Composite material, preparation method thereof and display device

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