TW200837751A - Nano compound-type phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film - Google Patents
Nano compound-type phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film Download PDFInfo
- Publication number
- TW200837751A TW200837751A TW096107492A TW96107492A TW200837751A TW 200837751 A TW200837751 A TW 200837751A TW 096107492 A TW096107492 A TW 096107492A TW 96107492 A TW96107492 A TW 96107492A TW 200837751 A TW200837751 A TW 200837751A
- Authority
- TW
- Taiwan
- Prior art keywords
- phase change
- dielectric material
- target
- group
- recording film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002425 crystallisation Methods 0.000 title abstract description 20
- 230000008025 crystallization Effects 0.000 title abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000003989 dielectric material Substances 0.000 claims abstract description 34
- 239000002131 composite material Substances 0.000 claims abstract description 24
- 239000012782 phase change material Substances 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910018321 SbTe Inorganic materials 0.000 claims description 10
- -1 AglnSbTe Inorganic materials 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 8
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 8
- 229910005900 GeTe Inorganic materials 0.000 claims description 6
- 239000010985 leather Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 229910052950 sphalerite Inorganic materials 0.000 claims 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 2
- 229910005091 Si3N Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 55
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000002114 nanocomposite Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 4
- 229910000763 AgInSbTe Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096107492A TW200837751A (en) | 2007-03-05 | 2007-03-05 | Nano compound-type phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film |
| US12/041,187 US20080220197A1 (en) | 2007-03-05 | 2008-03-03 | Phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096107492A TW200837751A (en) | 2007-03-05 | 2007-03-05 | Nano compound-type phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200837751A true TW200837751A (en) | 2008-09-16 |
| TWI342020B TWI342020B (https=) | 2011-05-11 |
Family
ID=39741926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096107492A TW200837751A (en) | 2007-03-05 | 2007-03-05 | Nano compound-type phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20080220197A1 (https=) |
| TW (1) | TW200837751A (https=) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889756A (en) * | 1996-07-25 | 1999-03-30 | Kabushiki Kaisha Toshiba | Phase change optical recording medium |
| KR100754166B1 (ko) * | 2004-05-17 | 2007-09-03 | 삼성전자주식회사 | 초해상 정보 저장매체 및 그 정보 기록 및/또는 재생기기 |
-
2007
- 2007-03-05 TW TW096107492A patent/TW200837751A/zh not_active IP Right Cessation
-
2008
- 2008-03-03 US US12/041,187 patent/US20080220197A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20080220197A1 (en) | 2008-09-11 |
| TWI342020B (https=) | 2011-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |