200834806 九、發明說明 【發明所屬之技術領域】 本發明是關於保持裝置及保持方法，更具體而言，是 關於以非接觸的狀態可保持半導體晶圓或是晶片等的板狀 構件的保持裝置及保持方法。 【先前技術】 習知，半導體晶圓（以下，簡稱爲「晶圓」）’是在其 電路面側黏貼有保護片，而在各種處理工程間來移載該當 晶圓時，採用著具備保持裝置的搬運裝置。該保持裝置是 具備接觸於晶圓面而吸附保持該當晶圓的吸附孔的構成成 爲一般性者。 又，例如專利文獻1所述地，也提案利用從保持面所 噴出的氣體的流動而在與板狀構件之間形成負壓領域，作 爲利用柏努利（Bernoulli’s)效果的非接觸型來保持晶圓的 保持裝置。 專利文獻1 :日本特開2006- 1 56692號公報 【發明內容】 然而，在接觸型保持裝置，若在晶圓上有彎曲等變形 的情形，或是如第5(A)圖所示地在藉由先切斷而把晶圓 被個片化，保護片形成波狀地變形的情形，則成爲很難充 分地附與吸附，而會產生吸附不良的不方便。 亦即，欲在晶圓黏貼保護片時，爲了避免在該當保護 200834806 片與晶圓之間混入氣泡等，成爲在保護片附與一定張力的 狀態下進行著黏貼者。因此，藉由附與黏貼時的張力的反 作用，在晶圓具有容易產生彎曲的固有問題。尤其是藉由 背面硏削被極薄化的晶圓，或如形成多數晶片地進行切割 之後，此些問題是更顯著化。 又，即使專利文獻1所述的非接觸型保持裝置，有上 述的彎曲變形等情形，也成爲很難確保拉住晶片而保持所 需的充分的負壓狀態，藉由此，具有晶圓的保持成爲困難 的不方便。又，同文獻1的保持裝置，是構造極複雜而裝 置製造成本也高昂。 本發明是著眼於此種不方便而創作者，其目的是在於 提供即使在晶圓等的板狀構件有彎曲等，也在大約非接的 狀態下可確實地保持該當板狀構件，而且可廉價地製造的 簡便型的保持裝置及保持方法。 爲了達成上述目的，本發明是採用一種保持裝置，具 備：備有相對於板狀構件的保持面的保持體，及從上述保 持面噴出氣體的氣體供應手段，控制上述氣體的流動方 向，就在上述保持面與板狀構件之間形成負壓領域，而以 大約非接觸狀態保持板狀構件的保持裝置，其特徵爲： 上述氣體供應手段是供應被加熱或被冷卻的氣體的構 成。 在本發明中，上述氣體的溫度是設置成可調整。 又，上述氣體是惰性氣體也可以。 又，採用上述保持體是被支撐於搬運臂，被保持於上 -5- 200834806 述保持面的板狀構件在平台間設置成可搬運的構成。 又，作成具備將從上述保持面所噴出的氣體朝該當保 持面內的上方排氣的排氣部的構成較佳。 又，可採用在上述保持面，設有規制沿著上述板狀構 件的面方向移動的止動件的構成。 又，本發明是一種保持方法，是在相對於板狀構件的 保持面以大約非接觸狀態保持上述板狀構件的方法，其特 徵爲： 採用從上述保持面噴出被加熱或被冷卻的氣體，而且 控制該當氣體的流動方向而在上述保持面與板狀構件之間 形成負壓領域俾保持該當板狀構件的方法。 在上述保持方法中，採用將上述板狀構件局部地接觸 於上述保持面以規制沿著上述板狀構件的面方向的移動的 方法較佳。 又，在本案說明書中，「tk狀構件」是也包括被個片 化的半導體晶圓，又使用作爲也包括黏貼有片的玻璃、鋼 板、或樹脂板等，其他的板狀構件的槪念。 依照本發明，從保持面噴出氣體的氣體供應手段，是 供應被加熱或被冷卻的構成之故，因而即使在板狀構件有 彎曲等變形，也會帶來熱或冷卻所致的片的變形等而在矯 正彎曲等的狀態下謀求平面化，成爲確實地形成負壓領域 而可保持板狀構件的情形。 又，將氣體的溫度作成可變，就可因應於板狀構件的 材質，彎曲的程度、板厚等成爲可調整溫度，而不會產生 -6- 200834806 板狀構件的性狀變化等，可保持該當板狀構件。 又，藉由設置排氣部的構成，成爲可順利地排出從保 持面所噴出的氣體，而可形成充分的負壓狀態。 又，在設置止動件的構成中，也可良好地保持移載事 先對準的板狀構件時的移載後的位置性精度。 【實施方式】 以下，針對於本發明的實施形態一面參照圖式一面加 以說明。 在第1圖表示本發明的保持裝置被適用於搬運裝置的 槪略立體圖。在該圖中，被支撐於搬運裝置1 0的保持裝 置π是具備：平面視大約呈圓形的保持體1 3，及被連接 於該保持體1 7的氣體供應手段1 4所構成。也如第2圖至 第4圖所示地，保持體13是在本實施形態中，是由：在 下面側具備保持面15A的大約有底盤狀的下殻體15，及 在與該當下殼體15之間形成腔C[參照第3(A)圖]般地被 固定的上殼體16所構成。 如第4圖所示地，上述下殻體15是具備：平面視大 約圓形的底壁20，及從該底壁20的周緣豎立的周壁21， 及朝上下方向貫通上述底壁20，而且作成上端位置被設 定成與周壁21的上端位置大約一致的高度的排氣部的筒 部23，及將經由上述氣體供應手段丨4所供應的氣體噴出 到上述保持面15A側的噴出孔25 [參照第2圖，第3(A)圖] 所構成。筒部23是並未特別加以限定者。惟設於接近於 200834806 上述周壁2 1的四部位，配置於沿著底壁20的周方向互相 地隔著大約90度的間隔的位置。又，在上述保持面15A 中，在此噴出孔2 5位於外側位置，橡膠等軟質材料所構 成的止動件26被固定在互相地隔著大約90度間隔的位 置。 如擴大第3(B)圖所示地，上述噴出孔25是設置成具 備：位於底壁20的上半部側的小徑孔部25 A，及相連於 該小徑孔部25 A，而且隨著朝保持面1 5 A側逐漸擴開的推 拔孔部25B的形狀。該噴出孔25是底壁20的中央部，及 在上述筒部23間設置於周方向大約90度間隔位置的4個 的合計形成於5部位。在推拔孔部2 5 B，經由未圖示的支 撐構件成爲配置有整流體27，藉由該當整流體27,從小 徑孔部25A所噴出的氣體成爲沿著推拔孔部25B的傾斜 面，與保持面15A流動。 上述上殼體16是形成平面視大約圓盤狀，在其面內 具備：連通於上述各筒部23的開口 30，及將氣體供應於 上述腔C內的2部位的供應孔31[參照第3(A)圖]所構 成。 如第1圖所示地，上述氣體供應手段14是由：氣體 供應泵P，及連接於該氣體供應泵P的溫度調節器32，及 配置於該當溫度調節器32與上述供應孔31之間的軟管 33所構成。從氣體供應泵P所供應的氣體，是藉由溫度 調節器32被加熱或被冷卻成所定溫度之後，經由軟管33 被供應到上述腔C內，而被供應到該當腔C內的氣體， 200834806 是成爲藉由上述噴出孔25所噴出。在此，利用溫度調節 器32的氣體的溫度是可設置成可變設定成任意溫度。 又，如第1圖及第3(A)圖所示地，本實施形態的保 持裝置1 1所致的對象物’亦即板狀構件，是作成被支撐 於保護片S的面的經切割的晶圓W的集合體，惟爲進行 切割之前的一枚晶圓也可以。 上述搬運裝置1〇是包括：被連結於上述保持裝置11 的上殼體16的中央部的搬運臂40，及朝X軸方向移動該 當搬運臂40的單軸機械手4 1所構成。如第1圖所示地’ 該搬運裝置10是構成可將被支撐於具有對準功能的第1 平台42的晶圓W的集合體，移載到第2平台43。又，在 第1平台42，設有檢測出被形成於晶圓W的外周部分的 未予圖示的V缺口的感測器44，而該當感測器44的水平 部分是構成從第1平台42的上方朝橫方向躲避而可容許 保持裝置11的上下移動。 上述單軸機械手41是朝第1圖中X軸方向延伸，該 當單軸機械手41設有：朝上下方向（Z軸方向）延伸的氣缸 45，及經由該當氣缸45可昇降的昇降滑件46 ’而經由氣 缸47把上述搬運臂40的基端側被連接於該當昇降、滑件 4 6° 以下，針對於本實施形態的保持方法也一面參照第5 圖一面加以說明。 在此，如第1圖所示地，作成在第1平台42上’被 支撐於保護片S的多數晶片W處於被對準的狀態者，而 -9 - 200834806 把該當晶片w作成被搬運的第2平台43者。又，晶片w 是受到保護片S的張力影響而被狀地變形。 經由搬運裝置1 〇使得保持裝置1 1移動位在第1平台 42上，而且開動氣缸45進行所定動作而把保持裝置1 1 的保持面1 5 A位於晶片W的真正上方。在此，從氣體供 應手段1 4的泵P供應被保持成一定壓的氣體，而且通過 溫度調節器32的氣體是被調節溫度（在本實施形態中爲加 熱）成事先所設定的溫度，而把該當被加熱的氣體經由腔 C而從噴出孔25[參照第5(A)圖]。 通過噴出孔25的氣體是藉由整流體27成爲沿著推拔 孔部25B的傾斜面的流動。之後，該流動是成爲一面傳到 保持面15A —面從保持面15A的外周側朝放射方向的流 動，及在保持面15A的面內中，從筒部23朝上方的流 動。該氣體的流動，是將藉由推拔孔部25B所形成的凹下 領域內作成負壓，而藉由該當負壓，產生欲吸著晶片 W 的作用，藉由柏努利效果成爲以非接觸狀態保持晶片W 的力量。 如此地，當保持體1 3接近於晶片W，則利用保護片 S的影響變形成波狀的晶片W，是藉由被加熱的氣體而產 生變形。亦即，藉由被加熱的氣體的影響，晶片W與保 護片S —起模仿第1平台42而成爲大約平坦的狀態[參照 第5(B)圖]。 之後，當保持體1 3達到所定位置，則藉由柏努利效 果，吸著被支撐於保護片S的晶片W而加以保持，並可 -10- 200834806 進行搬運[參照第5(C)圖]。 如此地，在晶片W被保持在保持面1 5的狀態下，晶 片W的外方一部分成爲大約接觸於止動件26。該接觸是 成爲規制保護片S對於面方向的移動或偏移，結果，晶片 W對於面方向的移動被規制。因此，在該狀態，經由搬運 裝置1 〇。將晶片W移到第2平台43側，藉由停止上述的 氣體供應，成爲晶片W在被定位的狀態下被搬運在該當 第2平台43上。 因此，依照此種實施形態，從氣體供應手段1 4所供 應的氣體被加熱者之故，因而可將彎曲變形的保護片S矯 正成平坦，而藉由柏努利效果確保吸著保持上所需的充分 的負壓狀態下就可得到確實地保持該當晶片W的效果。 如以上所述地，用以實施本發明的最佳的構成，方法 等。是被揭示在上述記載，惟本發明是並不被限定於此 者。 亦即，本發明是主要關於特定的實施形態，特別是加 以圖示，並加以說明，惟未超越本發明的技術性思想及目 的範圍，對於以上所說明的實施形態，有關於形狀、位置 或配置等，視需要，熟習該項人員可做各種變更。 例如，在上述實施形態中，噴出氣體的噴出孔25， 將氣體供應於腔C內的軟管3 3，在保持體1 3的面內上方 通過氣體的筒部23的數，是並不被限定於圖示構成例 者，視需要可增加或減少。此時，吸著保持板狀構件所用 的負壓，在保持面15A，配置成容易產生優異平衡就可 -11 - 200834806 又，藉由保護片S的種類，若冷卻者可矯正變形時， 則作成藉由溫度調節器32來冷卻所噴出的氣體也可以。 又，將保護片S作爲紫外線硬化型的接著片，而在第 1平台42與第2平台43之間設置紫外線照射裝置，作成 在載置於該當第2平台的前段減弱其接著力的構成時，則 可將噴出的氣體作成氮氣等的惰性氣體。此時，在照射紫 外線的階段，防止表出於切割線的接著劑的氧氣所致的硬 化不良，而可載置於第2平台之故，因而可避免產生在下 一工程的晶片W的拾波時接著劑的未硬化所致的拾波不 良。 又，惰性氣體是並不被限定於氮氣體，而是氬氣體、 二氧化碳氣體等其他惰性氣體也可以。 又，止動件26是構成接觸於晶圓W的外周也可以。 【圖式簡單說明】 第1圖是表示保持裝置被適用於搬運裝置的實施形態 的槪略立體圖。 第2圖是表示保持裝置的槪略俯視圖。 第3(A)圖是表示沿著第2圖的A-A線的箭視斷面 圖。 第3(B)圖是表示沿著第3(A)圖的B部擴大圖。 第4圖是表示保持裝置的分解立體圖。 第5圖是表示被適用於搬運裝置的實施形態的動作說 -12- 200834806 明圖 【主 件符號說明】 搬運裝置 保持裝置 保持體 氣體供應手段 :保持面 筒部（排氣部） 止動件 溫度調節器 搬運臂 第1平台 第2平台 晶片（板狀構件）BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a holding device and a holding method, and more particularly to a holding device for holding a plate-shaped member such as a semiconductor wafer or a wafer in a non-contact state. And keep the method. [Prior Art] Conventionally, a semiconductor wafer (hereinafter, simply referred to as "wafer") has a protective sheet adhered to its circuit surface side, and is used to hold the wafer when it is transferred between various processing projects. The handling device of the device. The holding device is generally configured to have an adsorption hole that is in contact with the wafer surface and that adsorbs and holds the wafer. Further, for example, as described in Patent Document 1, it is proposed to form a negative pressure region between the plate member and the flow of the gas ejected from the holding surface, and to maintain it as a non-contact type using Bernoulli's effect. Wafer holding device. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. 2006- 1 56692. However, in the contact type holding device, if there is deformation such as bending on the wafer, or as shown in Fig. 5(A) When the wafer is diced by cutting first, and the protective sheet is deformed in a wave shape, it is difficult to sufficiently attach the adsorption, which may cause inconvenience in adsorption failure. In other words, in order to prevent the air bubbles from being mixed between the wafers and the wafers, it is necessary to adhere the protective sheets to a certain tension. Therefore, there is an inherent problem that the wafer is likely to be bent by the reaction of the tension at the time of pasting. These problems are more pronounced especially by wafers that are extremely thinned by backside dicing, or by cutting as many wafers are formed. Further, even in the case of the non-contact type holding device described in Patent Document 1, in the case of the above-described bending deformation or the like, it is difficult to ensure that a sufficient negative pressure state is maintained while holding the wafer, thereby having a wafer. It is inconvenient to keep it difficult. Further, the holding device of the same document 1 has an extremely complicated structure and a high manufacturing cost of the device. The present invention has been made in view of such inconvenience, and it is an object of the present invention to provide a plate-like member that can be reliably held in a state of being non-connected even when a plate-like member such as a wafer is bent or the like. A simple holding device and a holding method that are inexpensively manufactured. In order to achieve the above object, the present invention provides a holding device comprising: a holding body provided with a holding surface with respect to the plate-shaped member; and a gas supply means for ejecting gas from the holding surface, and controlling the flow direction of the gas, A holding device that forms a negative pressure region between the holding surface and the plate member and holds the plate member in an approximately non-contact state is characterized in that the gas supply means is configured to supply a heated or cooled gas. In the present invention, the temperature of the above gas is set to be adjustable. Further, the gas may be an inert gas. Further, the above-described holding body is configured to be supported by the transport arm, and the plate-shaped member held by the holding surface of the above-mentioned holding body is provided to be transportable between the platforms. Further, it is preferable to have a configuration in which an exhaust portion that exhausts gas ejected from the holding surface toward the upper side in the holding surface is provided. Further, it is possible to adopt a configuration in which a stopper that moves along the surface direction of the plate-like member is provided on the holding surface. Further, the present invention is a holding method for holding the plate-like member in an approximately non-contact state with respect to a holding surface of a plate-like member, characterized in that: a gas heated or cooled is ejected from the holding surface, Further, a method of controlling the flow direction of the gas to form a negative pressure region between the holding surface and the plate member and holding the plate member is controlled. In the above holding method, a method of locally contacting the plate-like member to the holding surface to regulate the movement along the surface direction of the plate-like member is preferable. In addition, in the present specification, the "tk-shaped member" includes a semiconductor wafer which is formed into a sheet, and is also used as a glass, a steel plate, a resin plate or the like which also includes a sheet, and other plate-like members are also cherished. . According to the present invention, the gas supply means for ejecting the gas from the holding surface is a structure in which the supply is heated or cooled, so that even if the plate member is deformed by bending or the like, deformation of the sheet due to heat or cooling is caused. In the state where the bending or the like is corrected, the planarization is performed, and the negative pressure region is surely formed to maintain the plate-like member. Further, by changing the temperature of the gas, the temperature of the plate-like member, the degree of bending, the thickness of the plate, and the like can be adjusted to a temperature, and the property of the plate member can be maintained without changing the properties of the plate member. It should be a plate member. Further, by providing the configuration of the exhaust portion, it is possible to smoothly discharge the gas ejected from the holding surface, and a sufficient negative pressure state can be formed. Further, in the configuration in which the stopper is provided, the positional accuracy after the transfer of the previously aligned plate-like member can be satisfactorily maintained. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic perspective view showing the holding device of the present invention applied to a conveying device. In the figure, the holding means π supported by the conveying device 10 includes a holder 13 which is approximately circular in plan view, and a gas supply means 14 which is connected to the holder 17. As shown in FIGS. 2 to 4, the holding body 13 is a chassis-like lower casing 15 having a holding surface 15A on the lower surface side, and the lower casing. An upper casing 16 that is fixed like a cavity C (see Fig. 3(A)) is formed between the bodies 15. As shown in Fig. 4, the lower casing 15 includes a bottom wall 20 that is approximately circular in plan view, a peripheral wall 21 that is erected from the periphery of the bottom wall 20, and a through wall 20 that penetrates the vertical wall 20 in the vertical direction. The tubular portion 23 of the exhaust portion having the height at which the upper end position is set to approximately coincide with the upper end position of the peripheral wall 21, and the discharge hole 25 for discharging the gas supplied through the gas supply means 丨4 to the holding surface 15A side are formed [ Refer to Figure 2 and Figure 3(A) for the construction. The tubular portion 23 is not particularly limited. Only the four portions of the peripheral wall 21 which are close to 200834806 are disposed at positions spaced apart from each other by a distance of approximately 90 degrees along the circumferential direction of the bottom wall 20. Further, in the holding surface 15A, the discharge holes 25 are located at the outer positions, and the stoppers 26 made of a soft material such as rubber are fixed at positions spaced apart from each other by about 90 degrees. As shown in Fig. 3(B), the discharge hole 25 is provided with a small diameter hole portion 25A located on the upper half side of the bottom wall 20, and connected to the small diameter hole portion 25A, and The shape of the push-out hole portion 25B which gradually expands toward the holding surface 15 A side. The discharge hole 25 is a central portion of the bottom wall 20, and a total of four portions which are disposed at intervals of approximately 90 degrees in the circumferential direction between the tubular portions 23 are formed at five locations. In the push-out hole portion 2 5 B, the rectifying body 27 is disposed via a support member (not shown), and the gas ejected from the small-diameter hole portion 25A by the rectifying body 27 becomes an inclined surface along the push-pull hole portion 25B. , and the holding surface 15A flows. The upper casing 16 is formed in a substantially disk shape in a plan view, and has an opening 30 communicating with the respective tubular portions 23 and a supply hole 31 for supplying gas to the two portions in the cavity C in the surface thereof [refer to 3 (A) map] constitutes. As shown in FIG. 1, the gas supply means 14 is composed of a gas supply pump P, a temperature regulator 32 connected to the gas supply pump P, and disposed between the temperature regulator 32 and the supply hole 31. The hose 33 is constructed. The gas supplied from the gas supply pump P is supplied to the cavity C via the hose 33 after being heated or cooled to a predetermined temperature by the temperature regulator 32, and is supplied to the gas in the cavity C, 200834806 is ejected by the ejection hole 25. Here, the temperature of the gas using the temperature regulator 32 can be set to be variably set to an arbitrary temperature. In addition, as shown in FIG. 1 and FIG. 3(A), the object of the holding device 1 of the present embodiment, that is, the plate-like member, is cut to be supported on the surface of the protective sheet S. The assembly of the wafer W can be used only for one wafer before cutting. The transport device 1A includes a transport arm 40 coupled to a central portion of the upper casing 16 of the holding device 11, and a single-axis robot 41 that moves the transport arm 40 in the X-axis direction. As shown in Fig. 1, the transport device 10 is an assembly that can support the wafer W supported on the first stage 42 having an alignment function, and is transferred to the second stage 43. Further, the first stage 42 is provided with a sensor 44 that detects a V-notch (not shown) formed on the outer peripheral portion of the wafer W, and the horizontal portion of the sensor 44 is formed from the first platform. The upper portion of the 42 is evaded in the lateral direction to allow the up and down movement of the holding device 11. The uniaxial robot 41 extends in the X-axis direction in FIG. 1, and the uniaxial robot 41 is provided with a cylinder 45 extending in the vertical direction (Z-axis direction), and a lifting slider that can be lifted and lowered via the cylinder 45. 46', the base end side of the transfer arm 40 is connected to the lifter and the slider by 4° or less via the air cylinder 47, and the holding method of the present embodiment will be described with reference to Fig. 5 . Here, as shown in Fig. 1, a plurality of wafers W supported by the protective sheet S on the first stage 42 are placed in alignment, and -9 - 200834806 is used to transport the wafer w. The second platform 43. Further, the wafer w is deformed in a shape by the influence of the tension of the protective sheet S. The holding device 1 1 is moved to the first stage 42 via the conveying device 1 , and the cylinder 45 is actuated to perform the predetermined operation, and the holding surface 15 A of the holding device 1 1 is positioned substantially above the wafer W. Here, the gas held at a constant pressure is supplied from the pump P of the gas supply means 14 and the gas passing through the temperature regulator 32 is the adjusted temperature (heating in the present embodiment) to a previously set temperature. The gas to be heated is discharged from the discharge hole 25 through the cavity C [refer to Fig. 5(A)]. The gas that has passed through the discharge hole 25 is a flow along the inclined surface of the push-out hole portion 25B by the flow regulating body 27. Then, the flow is caused to flow in the radial direction from the outer peripheral side of the holding surface 15A to the holding surface 15A, and to flow upward from the tubular portion 23 in the surface of the holding surface 15A. The flow of the gas is to make a negative pressure in the concave region formed by the push-out hole portion 25B, and by the negative pressure, the wafer W is sucked, and the effect of the Bernoulli is made. The contact state maintains the force of the wafer W. As described above, when the holder 13 is close to the wafer W, the corrugated wafer W is deformed by the influence of the protective sheet S, and is deformed by the heated gas. That is, the wafer W and the protective sheet S are in a state of being approximately flat as compared with the protective sheet S by the influence of the heated gas [refer to Fig. 5(B)]. After that, when the holding body 13 reaches a predetermined position, the wafer W supported by the protective sheet S is sucked and held by the Bernoulli effect, and can be transported by -10-200834806 [Refer to Fig. 5(C) ]. As described above, in a state where the wafer W is held by the holding surface 15, the outer portion of the wafer W is brought into contact with the stopper 26. This contact is to regulate the movement or offset of the protective sheet S in the plane direction, and as a result, the movement of the wafer W in the plane direction is regulated. Therefore, in this state, the conveyance device 1 is passed. The wafer W is moved to the second stage 43 side, and by stopping the above-described gas supply, the wafer W is conveyed on the second stage 43 while being positioned. Therefore, according to this embodiment, the gas supplied from the gas supply means 14 is heated, so that the bending-deformed protective sheet S can be corrected to be flat, and the snubber effect is ensured by the Bernoulli effect. The effect of reliably holding the wafer W can be obtained under a sufficient negative pressure state. As described above, the best configuration, method, and the like for carrying out the invention. The above description is disclosed, but the present invention is not limited thereto. That is, the present invention is mainly directed to a specific embodiment, and is particularly illustrated and described, but without departing from the technical spirit and scope of the present invention, with respect to the above-described embodiments, regarding the shape, position, or Configuration, etc., as needed, familiar with the person can make various changes. For example, in the above-described embodiment, the discharge hole 25 for ejecting gas supplies the gas to the hose 3 3 in the cavity C, and the number of the tubular portion 23 passing through the gas in the upper surface of the holder 13 is not It is limited to those of the illustrated configuration, and may be increased or decreased as needed. At this time, the negative pressure for holding the plate-like member is sucked, and the holding surface 15A is disposed so as to easily generate an excellent balance. -11 - 200834806 Further, when the cooler can correct the deformation by the type of the protective sheet S, It is also possible to cool the gas to be ejected by the temperature regulator 32. In addition, the protective sheet S is an ultraviolet-curable adhesive sheet, and an ultraviolet irradiation device is provided between the first stage 42 and the second stage 43 to form a configuration in which the adhesion force is reduced in the front stage of the second stage. Then, the gas to be ejected can be made into an inert gas such as nitrogen. At this time, in the stage of irradiating the ultraviolet ray, the hardening due to the oxygen of the adhesive of the dicing line is prevented, and it can be placed on the second stage, so that the pickup of the wafer W in the next process can be avoided. When the adhesive is not hardened, the pickup is poor. Further, the inert gas is not limited to the nitrogen gas, but may be other inert gas such as argon gas or carbon dioxide gas. Further, the stopper 26 may be configured to be in contact with the outer circumference of the wafer W. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view showing an embodiment in which a holding device is applied to a conveying device. Fig. 2 is a schematic plan view showing the holding device. Fig. 3(A) is a cross-sectional view taken along line A-A of Fig. 2; Fig. 3(B) is an enlarged view showing a portion B along the third (A) diagram. Fig. 4 is an exploded perspective view showing the holding device. Fig. 5 is a view showing the operation of the embodiment applied to the conveying device. -12-200834806. [Description of the main part symbol] The conveying device holding device holding body gas supply means: holding the face tube portion (exhaust portion) stopper Temperature regulator carrier arm 1st platform 2nd platform wafer (plate member)