TW200834746A - Method of manufacturing trench-type DMOS transistors and Schottky components - Google Patents
Method of manufacturing trench-type DMOS transistors and Schottky components Download PDFInfo
- Publication number
- TW200834746A TW200834746A TW96104976A TW96104976A TW200834746A TW 200834746 A TW200834746 A TW 200834746A TW 96104976 A TW96104976 A TW 96104976A TW 96104976 A TW96104976 A TW 96104976A TW 200834746 A TW200834746 A TW 200834746A
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- Taiwan
- Prior art keywords
- layer
- trench
- type
- oxide layer
- pattern
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 23
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 210000000746 body region Anatomy 0.000 claims description 21
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- 239000011241 protective layer Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
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- 238000010586 diagram Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 241000238631 Hexapoda Species 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
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- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96104976A TW200834746A (en) | 2007-02-12 | 2007-02-12 | Method of manufacturing trench-type DMOS transistors and Schottky components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96104976A TW200834746A (en) | 2007-02-12 | 2007-02-12 | Method of manufacturing trench-type DMOS transistors and Schottky components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200834746A true TW200834746A (en) | 2008-08-16 |
| TWI329897B TWI329897B (enExample) | 2010-09-01 |
Family
ID=44819543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96104976A TW200834746A (en) | 2007-02-12 | 2007-02-12 | Method of manufacturing trench-type DMOS transistors and Schottky components |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200834746A (enExample) |
-
2007
- 2007-02-12 TW TW96104976A patent/TW200834746A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI329897B (enExample) | 2010-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |