200828616 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體裝置，且特別是有關 於一種使用螢光粉之發光二極體裝置。 【先前技術】 藍光發光一極體晶片通常搭配使用可被激發出冷光 的材料（例如可被激發出黃光之螢光粉體），以便在人眼中 混合出近似白光的光色。由於習知的螢光粉體塗佈技術係 將一定數量的螢光粉體覆蓋住藍光發光二極體晶片，然後 由未被螢光粉體吸收的藍光，與螢光粉體被激發的光色相 互混合，達到人眼中近似白光的功效。 但因習知技術中，混合有螢光粉體的膠體係注入並填 滿藍光發光一極體晶片所在的碗狀反射杯内，由於碗狀反 射杯的开> 狀多注重於反射光線的效果，但卻並未顧及反射 光線射出後光色不均的現象。 此種方法不可避免的情況為：因膠體塗佈至藍光發光 二極體晶片的厚度並不均勻，導致各個區域混合光色的程 度亦不相同’若照射至一平面上，即能明顯看出膠體較薄 的地方，因藍光傳遞的路徑短，被螢光粉體吸收或散射的 機率低，所以發出的光色偏藍。而膠體較厚的地方因藍光 傳遞的路徑長’被螢光粉體吸收或散射的機率高，所以發 出的光色偏黃，導致整體光色的分佈情況不均勻。 另外，一習知技術利用模版或是電泳沈積的方法，將 200828616 螢光粉體均勻塗佈至藍光發光二極體晶片的表面，以便螢 光粕體的厚度能控制小於發光二極體晶片長度的百分之 十，或是控制螢光粉體的塗層厚度變動不超過百分之十。 :而以一般發光二極體晶片之發光強度而言，晶片本身所 發出之正向光少則為總能量（Total Power)的60%以上，多 則為總能量的9〇%以上。因&，在晶片本身所發出之正向 光較側向光為強的狀況下，晶片之正向光所需之螢光粉體 〇 t要較側向光為多，以補正向光較強之能量，以達到所激 發之光源為均勻之白光。而該習知技術的螢光粉體的塗層 厚度變動不超過10%並無法完全解決黃藍光分佈不均的狀 況。 此外，该習知技術以模版方式塗佈螢光粉體，並不適 用於需要銲線(wirebonding)的發光二極體晶片，因模版會 將銲至發光二極體晶片的導線損壞，故此方式僅適用於覆 = (fHp chip)形式的發光二極體晶片。以電泳沈積的方式則 I 而要額外的設備及製程，將無可避免地增加生產成本。 因此’提供一個不需額外製造設備，製造程序簡易， 且光色均句之發光二極體裝置，以符合各種照明燈具的需 求是十分重要的。 【發明内容】 本發明的目的就是在提供一種光色均勻之發光二極 體裝置。 根據本發明之上述目的，提出一種發光二極體裝置。 200828616 依照本發明一較佳實施例，至少包含發光二極體晶片、反 射體、螢光膠體與基材。 此發光二極體晶片具有一頂面。而反射體至少包含一 圍牆體’且圍牆體之内緣長度與發光二極體晶片之頂面外 緣長度成一定比例，且圍牆體之内緣高度與發光二極體晶 片厚度亦成一定比例。 發光二極體晶片設置於基材之一側。螢光膠體則包含 螢光粉體與膝體，且該螢光膠體可覆蓋住發光二極體晶 片，並填滿圍牆體所圍設之空間。 本發明之實施例即在於解決光色不均的問題，當發光 二極體晶片頂面所發出之正向光較側面所發出之側向光 為強的狀況下，正向光所需之螢光粉體需要較側向光為 多，以補正向光較強之能；t，以彡到所激發之光源為均句200828616 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode device, and more particularly to a light-emitting diode device using phosphor powder. [Prior Art] A blue light-emitting one-pole wafer is usually used in combination with a material that can be excited to emit luminescence (for example, a phosphor powder that can be excited by yellow light) to mix a white light color in the human eye. The conventional phosphor powder coating technique covers a blue light emitting diode wafer with a certain amount of phosphor powder, and then blue light that is not absorbed by the phosphor powder, and light that is excited by the phosphor powder. The colors are mixed with each other to achieve the effect of appreciating white light in the human eye. However, in the prior art, the glue system mixed with the phosphor powder is injected and filled in the bowl-shaped reflector cup in which the blue light-emitting one-pole wafer is located, and the opening of the bowl-shaped reflector cup is more focused on the effect of reflecting light. However, it does not take into account the phenomenon of uneven color of light after the reflected light is emitted. The inevitable situation of this method is that the thickness of the mixed light color of the blue light emitting diode chip is not uniform due to the coating of the colloid, so that the degree of mixed light color in each area is also different. Where the colloid is thin, the path of blue light transmission is short, and the probability of being absorbed or scattered by the phosphor powder is low, so the light color is blue. Where the colloid is thick, the path length of the blue light transmission is high, and the probability of absorption or scattering by the phosphor powder is high, so that the light color is yellowish, resulting in uneven distribution of the overall light color. In addition, a conventional technique uses a template or an electrophoretic deposition method to uniformly apply the 200828616 phosphor powder to the surface of the blue light emitting diode wafer so that the thickness of the fluorescent body can be controlled to be smaller than the length of the light emitting diode chip. Ten percent, or the thickness of the coating controlling the phosphor powder does not vary by more than ten percent. In the case of the luminous intensity of a general light-emitting diode wafer, the amount of forward light emitted by the wafer itself is 60% or more of the total energy (Total Power), and more than 9% by weight of the total energy. Because &, when the forward light emitted by the wafer itself is stronger than the lateral light, the fluorescent powder 〇t required for the forward light of the wafer is more than the lateral light to compensate for the positive light. Strong energy to achieve a uniform white light for the excited source. However, the coating thickness of the fluorescent powder of the prior art does not vary by more than 10% and does not completely solve the problem of uneven distribution of yellow and blue light. In addition, the prior art stencil coating phosphor powder is not suitable for a light-emitting diode wafer that requires wire bonding, because the stencil will damage the wire soldered to the LED wafer, so this method Applicable only to light-emitting diode chips in the form of overlay = (fHp chip). In the case of electrophoretic deposition, additional equipment and processes will inevitably increase production costs. Therefore, it is very important to provide a light-emitting diode device that does not require additional manufacturing equipment, has a simple manufacturing process, and is suitable for various lighting fixtures. SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting diode device having uniform light color. According to the above object of the present invention, a light emitting diode device is proposed. 200828616 In accordance with a preferred embodiment of the invention, at least a light emitting diode wafer, a reflector, a phosphor colloid, and a substrate are included. The light emitting diode chip has a top surface. The reflector body comprises at least one wall body' and the inner edge length of the wall body is proportional to the length of the outer edge of the top surface of the LED chip, and the inner edge height of the wall body is also proportional to the thickness of the LED chip. . The light emitting diode chip is disposed on one side of the substrate. The phosphor colloid contains the phosphor powder and the knee body, and the phosphor colloid covers the LED chip and fills the space enclosed by the wall. The embodiment of the present invention solves the problem of uneven color of light. When the positive light emitted from the top surface of the LED substrate is stronger than the lateral light emitted from the side surface, the fluorescent light required for the forward light is required. The light powder needs more lateral light to compensate for the stronger energy of the positive light; t, to the source of the excitation is a uniform sentence
解決光色不均的問題。 用技術相較具有下列優點：Solve the problem of uneven color of light. Compared with technology, it has the following advantages:
形，實可大幅減少生產成本。 藉由上述之結構組成及實施例，本發明之實施例與習Shape can really reduce production costs. Embodiments and examples of the present invention are made up of the above structural components and embodiments
體’在發光二極體晶片設置後， 一極體晶片等比例放大的圍牆 置後，將螢光膠體填充至圍牆體 200828616 所圍設之空間中，因為圍牆體的高度與内緣的長度限制， 如此P可兀成均句塗佈—螢光膠體的薄層於發光二極體 晶片表面。 【實施方式】 -參,¾第1圖’其繪示依照本發明一較佳實施例的一種 發光一極體裝置之俯視圖。此發光二極體裝置⑽至少包 含了發光二極體晶片110,反射體120與基材130。 反射體120包含了圍牆體121。由第1圖中的俯視角产 觀看’圍膽體m的外形係依照發光二極體晶片11〇的形： 作等比例放大。若發光二極體晶片"〇的形狀為矩形，則圍 牆體121之内緣亦成矩形。此種構形係用以確保當榮光膠 體填充至圍牆體121所圍設之空間中時，可均勻塗佈位於 發光一極體晶片110側面的縫隙。 ί 在另一實施例中，發光二極體晶片110具有一頂面， 該，面呈—第—矩形，該第—矩形之週緣由第-週緣長度 及第-週緣寬度所組成。反射體120包含圍牆體12卜I 圍牆體121之内緣呈一第二矩形’第二矩形之週緣由第二 週緣長度及第二週緣寬度所組成，且第—週緣長度與第二 週緣長度之間的第-距離，和第__週緣寬度與第二週緣 度之間的第二距離相等。 在又一實施例中，發光二極體晶片11〇具有—頂面該 頂面呈一第一正方形，反射體12〇包含—圍牆體ΐ2ι，該= 牆體121之内緣呈一第二正方形’該第二正方形之週緣長 8 200828616 度大於該第-正方形之外緣長度，且該第二正方形 長度與該第一正方形之外緣長度成一定比例。 ^ 上述實施例之發光二極體晶片11〇均係設置於圍牆體 121所圍設之空間内。圍牆體121的内面與發光二極體 110的週面可為相互平行。 曰After the light-emitting diode chip is disposed, the scaled-up wall of the one-pole wafer is placed, and the phosphor colloid is filled into the space enclosed by the wall body 200828616 because the height of the wall body and the length of the inner edge are limited. Thus, P can be formed into a uniform coating - a thin layer of phosphor colloid on the surface of the light-emitting diode wafer. [Embodiment] - Reference, Figure 1 is a plan view of a light-emitting diode device in accordance with a preferred embodiment of the present invention. The light-emitting diode device (10) includes at least a light-emitting diode wafer 110, a reflector 120 and a substrate 130. The reflector 120 includes a wall body 121. The shape of the peripheral body m is shown in the plan view of Fig. 1 in accordance with the shape of the light-emitting diode wafer 11: scaled up. If the shape of the light-emitting diode wafer is rectangular, the inner edge of the wall 121 is also rectangular. This configuration is used to ensure that the gap on the side of the light-emitting monolithic wafer 110 can be uniformly applied when the glare colloid is filled into the space surrounded by the wall 121. In another embodiment, the LED wafer 110 has a top surface, the surface being a - rectangle, and the circumference of the first rectangle is composed of a length of the first circumference and a width of the first circumference. The reflector 120 includes a wall body 12, and the inner edge of the wall body 121 has a second rectangle. The circumference of the second rectangle is composed of a second circumference length and a second circumference width, and the first circumference length and the second circumference length are The first distance between the first and the __ circumference width is equal to the second distance between the second degree of circumference. In still another embodiment, the LED wafer 11 has a top surface which is a first square, and the reflector 12 includes a wall ΐ2ι, and the inner edge of the wall 121 has a second square. The circumference of the second square is 8 200828616 degrees greater than the length of the outer circumference of the first square, and the length of the second square is proportional to the length of the outer edge of the first square. The light-emitting diode wafer 11 of the above embodiment is disposed in a space surrounded by the wall body 121. The inner surface of the wall body 121 and the circumferential surface of the light emitting diode 110 may be parallel to each other.曰
參照第2圖，讀示依照本發明之—較佳實施例的— 種發光二極體裝置之剖面圖。此發光二極體裝置100至少 包含發光二極體晶片110 ’反射體12〇與螢光膠體14〇。 反射體120的材料包含金屬、塑膠、玻璃或透明材質。 反射體12〇包含了圍牆體121。圍牆體121内緣的長度121】 的範圍為發光二極體晶片11〇之頂面外緣長度之i i5倍至 2倍，而圍牆體121内緣的高度1212的範圍係發光二極體 晶片110之厚度的2倍至5倍。 因此，圍牆體121内緣的高度與發光二極體晶片ιι〇 厚度成一第一比值，而圍牆體121内緣的長度與發光二極 體晶片110之頂面外緣長度成一第二比值，第—比值較第 二比值為大。因第一比值的範圍約為2到5，且第二比值 的範圍約為U5到2,所以第一比值較第二比值為大。 將發光二極體晶片11〇設置於圍牆體121之内側後，將 螢光膠體14G填充至圍牆體} 21所圍之空間中，並覆蓋住 發光二極體晶片11〇。 螢光膠體14G包含螢光粉體與膠體，其中的螢光粉體係可 被激發出冷光的材料(例如可被激發出黃光、紅光或綠光之 螢光粉體）。膠體則是為了使螢光粉體不致四散崩落，兩者 200828616 混合後成為有流動性的螢光膠體140，以便能包覆住發光二 極體晶片110。 圍牆體121的内側與發光二極體晶片11〇的側面成相互 平行，此構形可使得由發光二極體晶片11〇發出的部分光線 被圍牆體121的内側反射後，能充分被螢光膠體14〇所吸收 並激發出與發光一極體晶片1 1 〇互補之光色，以形成人眼可 感受的白光。 參照第3圖，其繪示依照本發明之另一較佳實施例的 一種發光二極體裝置之剖面圖。此發光二極體裝置2〇〇至 少包含發光二極體晶片210，反射體220與榮光膠體240。 反射體220包含了圍牆體221。圍牆體221内緣的長度 2211的範圍為發光二極體晶片210之頂面外緣長度之115倍 至2倍，而圍牆體221内緣的高度2212的範圍係發光二極體 晶片210之厚度的2倍至5倍。 因此，圍牆體221内緣的高度與發光二極體晶片21〇厚度 成一第一比值，而圍牆體221内緣的長度與發光二極體晶片 210之頂面外緣長度成一第二比值。因第一比值的範圍約為2 到5，且第二比值的範圍約為1.15到2，所以第一比值較第二 比值為大。 將發光二極體晶片210設置於圍牆體221之内側後，將 螢光膠體240填充至圍牆體221所圍設之空間中，並覆蓋住 發光二極體晶片210。 螢光膠體240包含螢光粉體與膠體，其中的螢光粉體係可 被激發出冷光的材料（例如可被激發出黃光、紅光或綠光之 10 200828616 螢光粉體）。膠體則是為了使螢光粉體不致四散崩落，兩者 混合後成為有流動性的螢光膠體24〇，以便能包覆住發光二 極體晶片210。 圍牆體221的内側為一斜面，此斜面與假想之垂直線 (即圖中與發光二極體晶片21 〇之頂面垂直的虛線）之間有 一角度2213，此角度2213的範圍為介於大於〇度（degree)與 10度之間。可使得由發光二極體晶片210發出的部分光線 被圍牆體221的内側反射後，能充分被螢光膠體24〇所吸收 並激發出與發光二極體晶片21 〇互補之光色，以形成人眼可 感受的白光。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限疋本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖係繪示依照本發明一較佳實施例的一種發光二 極體裝置之俯視圖。 第2圖係繪示依照本發明之一較佳實施例的一種發光 二極體裝置之剖面圖。 第3圖係繪示依照本發明之另-較佳實施例的-種發 光二極體裝置之剖面圖。 11 200828616 【主要元件符號說明】 100 :發光二極體裝置 120 :反射體 1211 :長度 130 :發光二極體晶片 200 :發光二極體裝置 220 :反射體 2211 :長度 2213 :角度 240 :螢光膠體 110 :基材 121 :圍牆體 1212 :高度 140 :螢光膠體 210 :基材 221 :圍牆體 2212 :高度 230 :發光二極體晶片 12Referring to Figure 2, there is shown a cross-sectional view of a light emitting diode device in accordance with a preferred embodiment of the present invention. The light-emitting diode device 100 includes at least a light-emitting diode wafer 110' reflector 12' and a phosphor colloid 14'. The material of the reflector 120 comprises metal, plastic, glass or a transparent material. The reflector 12A includes a wall body 121. The length 121 of the inner edge of the wall 121 is in the range of i 5 times to 2 times the length of the outer edge of the top surface of the LED chip 11 , and the height 1212 of the inner edge of the wall 121 is the LED chip. The thickness of 110 is 2 to 5 times the thickness. Therefore, the height of the inner edge of the wall body 121 is a first ratio to the thickness of the light emitting diode chip, and the length of the inner edge of the wall body 121 is a second ratio to the outer edge length of the top surface of the light emitting diode chip 110. - The ratio is greater than the second ratio. Since the first ratio ranges from about 2 to 5, and the second ratio ranges from about U5 to 2, the first ratio is larger than the second ratio. After the light-emitting diode wafer 11 is placed on the inner side of the wall body 121, the phosphor colloid 14G is filled in the space surrounded by the wall body 21 and covers the light-emitting diode wafer 11A. The phosphor colloid 14G contains a phosphor powder and a colloid in which the phosphor system can be excited to emit a luminescent material (e.g., a phosphor powder which can be excited to be yellow, red or green). The colloid is designed so that the phosphor powder does not fall apart, and the two 200828616 are mixed to form a fluid fluorescent colloid 140 so as to cover the LED chip 110. The inner side of the wall body 121 and the side surface of the light-emitting diode wafer 11 are parallel to each other. This configuration allows a part of the light emitted from the light-emitting diode wafer 11 to be reflected by the inner side of the wall 121 to be sufficiently fluorescent. The colloid 14 吸收 absorbs and excites a light color complementary to the illuminating monopole wafer 11 1 以 to form white light that can be perceived by the human eye. Referring to Figure 3, there is shown a cross-sectional view of a light emitting diode device in accordance with another preferred embodiment of the present invention. The light-emitting diode device 2 includes at least a light-emitting diode wafer 210, a reflector 220 and a glare colloid 240. The reflector 220 includes a wall body 221. The length 2211 of the inner edge of the wall body 221 ranges from 115 times to 2 times the length of the outer edge of the top surface of the light-emitting diode wafer 210, and the height 2212 of the inner edge of the wall body 221 ranges from the thickness of the light-emitting diode chip 210. 2 to 5 times. Therefore, the height of the inner edge of the wall body 221 is a first ratio with the thickness of the light-emitting diode chip 21, and the length of the inner edge of the wall body 221 is a second ratio to the length of the outer edge of the top surface of the light-emitting diode wafer 210. Since the first ratio ranges from about 2 to 5, and the second ratio ranges from about 1.15 to 2, the first ratio is larger than the second ratio. After the light-emitting diode wafer 210 is placed inside the wall body 221, the phosphor paste 240 is filled into the space surrounded by the wall body 221 and covers the light-emitting diode wafer 210. The phosphor colloid 240 comprises a phosphor powder and a colloid, wherein the phosphor system can be excited to produce a luminescent material (e.g., 2008 200816 fluorescent powder that can be excited to yellow, red or green). The colloid is formed so that the phosphor powder does not fall apart, and the two are mixed to form a fluid fluorescent colloid 24 以便 so as to cover the light-emitting diode wafer 210. The inner side of the wall body 221 is a sloped surface having an angle 2213 between the imaginary vertical line (i.e., the dashed line perpendicular to the top surface of the light-emitting diode chip 21), and the angle 2213 is greater than Between the degree and 10 degrees. After a part of the light emitted by the LED chip 210 is reflected by the inner side of the wall body 221, it can be sufficiently absorbed by the phosphor colloid 24 to excite the color of the light complementary to the LED chip 21 to form a color. White light that the human eye can feel. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A top view of a light emitting diode device. Figure 2 is a cross-sectional view showing a light emitting diode device in accordance with a preferred embodiment of the present invention. Figure 3 is a cross-sectional view showing a light-emitting diode device in accordance with another preferred embodiment of the present invention. 11 200828616 [Description of main component symbols] 100: Light-emitting diode device 120: Reflector 1211: Length 130: Light-emitting diode wafer 200: Light-emitting diode device 220: Reflector 2211: Length 2213: Angle 240: Fluorescence Colloid 110: substrate 121: wall 1212: height 140: fluorescent colloid 210: substrate 221: wall 2212: height 230: light emitting diode wafer 12