200827612 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種發光二極體(Light Emitting Device， LED)裝置，特別是關於一種可以改善發光二極體封裝製 程與發光效率之閃爍型（Flash)彩光紅綠藍發光二極體 (Color RGB LED)裝置。 【先前技術】 高功率發光二極體(High Power LED)在設計時，其考 量因素為電流分布、熱逸散、熱產生、發光效率等問題 〇 _ 圖1為習知之閃爍型彩光紅綠藍發光二極體裝置。 H如圖1所示，習知之閃爍型彩光紅綠藍發光二極體裝置 包括閃爍控制晶片11、紅光發光二極體121、綠光發光 二極體122及藍光發光二極體123。閃爍控制晶片11設 置在基板10之正電極1〇1(位於發光裝置1〇左半邊)之上 ，其接腳VDD藉由金屬導線190連接至正電極1〇1，其 接腳RL、GL、BL分別藉由金屬導線191、192、193連 接至發光二極體121、122、123，且其接腳VSS藉由金 屬導線194連接至基板1〇之負電極1〇2(位於發光裝置 1〇右半邊）。發光二極體121〜123設置在負電極1〇2之上 ’其中綠光發光二極體122及藍光發光二極體123另外 分別藉由金屬導線195及196連接至負電極1〇2。如此， 閃爍控制晶片11便可以控制發光二極體121〜123之閃爍 —5 — D:\0I-I Linda\PK P»t\PKI0225l d〇c200827612 IX. Description of the Invention: [Technical Field] The present invention relates to a Light Emitting Device (LED) device, and more particularly to a scintillation type (which can improve the LED package process and luminous efficiency) Flash) Color Light Red Green Blue Light Emitting Diode (Color RGB LED) device. [Prior Art] When designing high-power LEDs, the considerations are current distribution, thermal dissipation, heat generation, luminous efficiency, etc. _ Figure 1 is a conventional flashing red and green Blue LED device. As shown in Fig. 1, a conventional scintillation type color red, green, and blue light emitting diode device includes a scintillation control wafer 11, a red light emitting diode 121, a green light emitting diode 122, and a blue light emitting diode 123. The flicker control wafer 11 is disposed on the positive electrode 1〇1 of the substrate 10 (located on the left half of the light-emitting device 1), and the pin VDD is connected to the positive electrode 1〇1 by the metal wire 190, and the pins RL, GL, The BL is connected to the LEDs 121, 122, and 123 by metal wires 191, 192, and 193, respectively, and the pins VSS are connected to the negative electrodes 1 and 2 of the substrate 1 by metal wires 194 (located in the light-emitting device 1). Right half). The light-emitting diodes 121 to 123 are disposed above the negative electrode 1〇2, wherein the green light-emitting diode 122 and the blue light-emitting diode 123 are additionally connected to the negative electrode 1〇2 by metal wires 195 and 196, respectively. Thus, the flicker control wafer 11 can control the flicker of the LEDs 121 to 123. 5 - D: \0I-I Linda\PK P»t\PKI0225l d〇c
06/12/22/11:14 AM 200827612 除此之外，此領域還提出了許多不同的二極體封裝 構造。舉例而言，例如中華民國公告第239,67〇號「發光 二極體封裝結構及其製作方法」發明專利，此專利即藉 由在絕緣矽基板上形成之複數個金屬導線，電性連接配 置在絕緣矽基板上之發光二極體與絕緣矽基板上之正負 電極。例如中華民國公告第295,34〇號「發光二極體之封 裝結構」新型專利，此專利係將發光二極體貼附在導電 基板上，藉以減少發光二極體之封裝體積。另外還有例 如中華民國公告第248,221號「LED覆晶晶片之凸塊構 造」發明專利，此專利是在發光二極體上設置銲墊，並 且在銲墊上設置具銲料之間隔體，用以接合於發光二極 體之載體。 .dsiD 可惜的是’這些專利所揭露的内容依然無法解決習 知之閃爍型彩光紅綠藍發光二極體裝置，其發光二極體 晶粒無法設置在光學中心（如圖丨所示，發光二極體 121〜123在發光裝置1〇之右半邊發光），造成光場偏移、 發光效率不易集中、紅綠藍三色混色不完全等缺點。另 外’此習知裝置最少需要打裝七條金屬導線，亦會造成 封裝打線製程複雜、光電轉換效率低落、排列空間與容 積空間利用不良等缺點。 【發明内容】 本發明的目的就是在提供一種閃爍型彩光紅綠藍發 光二極體裝置，使用覆晶陣列(Flip Chip Array)技術，經 由特別設計之覆晶晶粒排列，可以簡化發光二極體封裝 D:\0M Linda、PK p»tMt诹扭細 —6 —06/12/22/11:14 AM 200827612 In addition to this, many different diode package configurations have been proposed in this field. For example, the invention patent of the illuminating diode package structure and its manufacturing method is disclosed in the Republic of China Announcement No. 239, 67 ,, which is electrically connected by a plurality of metal wires formed on an insulating raft substrate. The light-emitting diode on the insulating germanium substrate and the positive and negative electrodes on the insulating germanium substrate. For example, the Republic of China Announcement No. 295, 34 「 "New Sealing Structure of Light-Emitting Diode", which attaches a light-emitting diode to a conductive substrate to reduce the package volume of the light-emitting diode. In addition, there is, for example, the invention patent of "Bump Structure of LED Flip Chip" of the Republic of China Announcement No. 248,221, which is provided with a solder pad on the light emitting diode, and a solder spacer is disposed on the solder pad for bonding The carrier of the light-emitting diode. .dsiD Unfortunately, the contents disclosed in these patents still cannot solve the conventional flashing color red, green, and blue light-emitting diode devices. The light-emitting diode crystal grains cannot be placed in the optical center (as shown in Figure ,, The diodes 121 to 123 emit light on the right half of the light-emitting device 1〇, which causes disadvantages such as a shift in the light field, difficulty in concentrating the luminous efficiency, and incomplete color mixing of the red, green and blue colors. In addition, this conventional device requires at least seven metal wires to be mounted, which also causes defects such as complicated packaging wiring process, low photoelectric conversion efficiency, poor utilization of arrangement space and volume space. SUMMARY OF THE INVENTION The object of the present invention is to provide a glittering color red, green, and blue light emitting diode device, which can be simplified by using a specially designed flip chip array arrangement using a Flip Chip Array technology. Pole package D:\0M Linda, PK p»tMt诹Twisted -6 —
06/12/22/11:14 AM 200827612 製程，並且提高裝置發光效率與容積利用率，使彩光混 色完全。 本發明提出一種閃爍型彩光紅綠藍發光二極體裝置 ’其包括一紅光發光二極體、一綠光發光二極體、一藍 光發光一極體以及一閃燦控制晶片覆晶次基座(Submount) 。紅光發光二極體用以發出紅光。綠光發光二極體用以 發出綠光。藍光發光二極體用以發出藍光。閃爍控制晶 片覆晶次基座用以控制紅光發光二極體、綠光發光二極 體以及藍光發光二極體之發光。其中，紅光發光二極體 、綠光發光二極體以及藍光發光二極體以正三角形之覆 晶排列方式，覆晶裝設於閃爍控制晶片覆晶次基座。 依本發明較佳實施例所述之閃爍型彩光紅綠藍發光 _ 一極體裝置’更包括一基板(Base)。基板具有一正電極接 位以及一負電極接位。 依本發明較佳實施例所述之閃爍型彩光紅綠藍發光 二極體裝置’上述閃爍控制晶片覆晶次基座包括一正電 極以及一負電極。正電極係透過一第一金屬導線連接正 電極接位，負電極係透過一第二金屬導線連接負電極接 位。 依本發明較佳實施例所述之閃爍型彩光紅綠藍發光 二極體裝置，上述閃爍控制晶片覆晶次基座包括一正電 極以及一負電極’正電極銲接於正電極接位，負電極銲 接於負電極接位。 O:\OI-l Linda\P« Piit\«l〇22id〇c —7—— 200827612 【實施方式】 為讓本發明之上述及其他目的、特徵及優點能更明 顯易懂，下文特舉本發明之較佳實施例，並配合所附圖 式’作詳細說明如下： 圖2為本發明實施例之閃爍型彩光紅綠藍發光二極 體裝置。請參考圖2，本發明實施例之閃爍型彩光紅綠藍 發光二極體裝置包括一紅光發光二極體22卜一綠光發光 二極體222、一藍光發光二極體223以及一閃爍控制晶片 覆晶次基座21。紅光發光二極體221用以發出紅光。綠 光發光二極體222用以發出綠光。藍光發光二極體223 用以發出藍光。閃爍控制晶片覆晶次基座21用以控制紅 光發光二極體221、綠光發光二極體222以及藍光發光二 極體之發光223。 丨圖3為本發明實施例之彩光紅綠藍混色圖。請參考 圖3，彩光之主要色光為紅光311、綠光312以及藍光 313。紅光311與綠光312疊色可得黃光321，綠光312 ，藍光313疊色可得青綠光322，而藍光313與紅光3Π 豐色可得紫光323。至於紅光311、綠光312與藍光313 疊色，則可得白光33。 睛同時參考圖2以及圖3,因此本實施例將紅光發光 二極體221、綠光發光二極體222以及藍光發光二極體 223以正二角形之覆晶排列方式，分別在正三角型之三個 頂點’覆晶裝设於閃爍控制晶片覆晶次基座21。藉此使 紅光發光二極體221發出之紅光3n、綠光發光二極體 D:\0M LinduXPK Pat\PKI022S, d〇c —8 200827612 222發出之綠光312以及藍光發光二極體223發出之藍光 313，而能夠完全混色成白光33。以便改良先前技術之閃 爍型彩光紅綠藍發光二極體裝置，在裝置搖晃時會產生 色偏之缺點。同時，發光二極體221〜223所形成之正三 角形，其中心位在本實施例之閃爍型彩光紅綠藍發光二 極體裝置之光學中心(如圖2所示，發光二極體221〜223 位在發光裝置10之中心發光）。因為設置在光學中心， 更可以集中發光光場，提高發光效率。 圖4為本發明實施例之熱傳導示意圖。請參考圖4， 發光一極體之覆晶技術的特點在於，發光二極體(如圖2 之發光二極體221〜223)之基質（Substrate)41在於裸晶42 之上。因此裸晶42除了可以直接透過透光的基質41發 >出光線431 ’更可透過反光層44發出反射光線432，更 進一步提高光輸出量。同時，覆晶技術由於將裸晶42透 過銲點45連接於次基座(Submount)46，因此獲得良好的 熱逸散路徑47，得到良好的熱傳導效能。在本實施例中 夂基座46 a又e十為閃燦控制晶片覆晶次基座21，具有閃 爍控制晶片的功能，能夠控制發光二極體(如圖2之發光 二極體221〜223)之發光。 另外，以覆晶陣列技術將紅光發光二極體221、綠光 發光二極體222以及藍光發光二極體223覆晶裝設於閃 爍控制晶片覆晶次基座21更可以簡化發光二極體封裝製 程’並且提高裝置容積利用率。 請再次參考圖2，本實施例之閃爍型彩光紅綠藍發光 O:\OI-l Linda\PK Pat\PK1022S doc —9 —06/12/22/11:14 AM 200827612 Process, and improve the luminous efficiency and volume utilization of the device, so that the color mixing is complete. The invention provides a scintillation type color light red green blue light emitting diode device, which comprises a red light emitting diode, a green light emitting diode, a blue light emitting body and a flashing control wafer flip chip subunit. Submount. The red light emitting diode is used to emit red light. The green light emitting diode is used to emit green light. The blue light emitting diode is used to emit blue light. The flicker control wafer flip-chip sub-base is used to control the illumination of the red light emitting diode, the green light emitting diode, and the blue light emitting diode. The red light emitting diode, the green light emitting diode and the blue light emitting diode are arranged in an equilateral triangle, and the flip chip is mounted on the flashing control wafer overlay submount. The glittering color red, green, and blue light emitting light according to the preferred embodiment of the present invention further includes a substrate. The substrate has a positive electrode contact and a negative electrode contact. The scintillation-type color light red-green-blue light-emitting diode device according to the preferred embodiment of the present invention has a positive electrode and a negative electrode. The positive electrode is connected to the positive electrode through a first metal wire, and the negative electrode is connected to the negative electrode through a second metal wire. According to a preferred embodiment of the present invention, the scintillation control chip, the flip-chip submount includes a positive electrode and a negative electrode, and the positive electrode is soldered to the positive electrode. The negative electrode is soldered to the negative electrode. O:\OI-l Linda\P« Piit\«l〇22id〇c-7, 200827612 [Embodiment] The above and other objects, features and advantages of the present invention will become more apparent and obvious. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings. FIG. 2 is a schematic view of a flashing type color red, green, and blue light emitting diode device according to an embodiment of the present invention. Please refer to FIG. 2 , the flashing color red, green, and blue light emitting diode device of the embodiment of the present invention includes a red light emitting diode 22 , a green light emitting diode 222 , a blue light emitting diode 223 , and a The wafer control wafer overlay submount 21 is flashed. The red light emitting diode 221 is used to emit red light. The green light emitting diode 222 is used to emit green light. The blue light emitting diode 223 is used to emit blue light. The flicker control wafer flip-chip submount 21 is used to control the red light emitting diode 221, the green light emitting diode 222, and the blue light emitting diode 223. FIG. 3 is a color red, green, and blue color mixture diagram according to an embodiment of the present invention. Referring to FIG. 3, the main color lights of the color light are red light 311, green light 312, and blue light 313. The red light 311 and the green light 312 are superimposed to obtain yellow light 321 , green light 312 , blue light 313 color to obtain cyan light 322, and blue light 313 and red light 3 Π rich color to obtain purple light 323. As for the red light 311, the green light 312 and the blue light 313 are superimposed, white light 33 is obtained. Referring to FIG. 2 and FIG. 3 at the same time, in this embodiment, the red light emitting diode 221, the green light emitting diode 222, and the blue light emitting diode 223 are arranged in a regular square shape, and are respectively in a triangular shape. The three apexes are flip-chip mounted on the scintillation control wafer flip-chip submount 21. Thereby, the red light 3n emitted by the red light emitting diode 221, the green light emitting diode D: \0M LinduXPK Pat\PKI022S, the green light 312 emitted by the d〇c-8 200827612 222, and the blue light emitting diode 223 The blue light 313 is emitted, and can be completely mixed into white light 33. In order to improve the prior art flashing color red, green, and blue light emitting diode device, the color shift is disadvantageous when the device is shaken. At the same time, the equilateral triangle formed by the light-emitting diodes 221 to 223 has a center at the optical center of the scintillation type color red, green, and blue light-emitting diode device of the present embodiment (as shown in FIG. 2, the light-emitting diode 221) ~223 bits are illuminated at the center of the illumination device 10). Because it is placed in the optical center, it can concentrate the illuminating light field and improve the luminous efficiency. 4 is a schematic view of heat conduction according to an embodiment of the present invention. Referring to FIG. 4, the flip chip technology of the light-emitting diode is characterized in that a substrate 41 of the light-emitting diode (such as the light-emitting diodes 221 to 223 of FIG. 2) is above the bare crystal 42. Therefore, the bare crystal 42 can directly transmit light 431 through the light-transmitting substrate 41, and the reflected light 432 can be transmitted through the light-reflecting layer 44 to further increase the light output. At the same time, the flip chip technique is connected to the submount 46 by passing the die 42 through the pad 45, so that a good thermal dissipation path 47 is obtained, resulting in good heat transfer performance. In this embodiment, the cymbal base 46 a is a flash control wafer flip-chip sub-base 21, which has the function of flashing the control chip, and can control the light-emitting diodes (such as the light-emitting diodes 221-223 of FIG. 2). ) the light. In addition, the flip-chip array technology, the red light emitting diode 221, the green light emitting diode 222, and the blue light emitting diode 223 are flip-chip mounted on the flashing control wafer overlay submount 21 to simplify the light emitting diode. Body packaging process 'and increase device volume utilization. Referring again to FIG. 2, the glittering color red, green, and blue light of this embodiment is O:\OI-l Linda\PK Pat\PK1022S doc —9 —
06/12/22/U . M AM 200827612 二極體裝置更包括基板20。基板20具有一正電極接位 201以及一負電極接位202。閃爍控制晶片覆晶次基座21 更包括一正電極211以及一負電極212。正電極211透過 一第一金屬導線291連接正電極接位201，負電極212透 過一第二金屬導線292連接負電極接位202。因此，閃爍 控制晶片覆晶次基座21便可以得到電源供應。 請比較圖2與先前技術之圖1，經適當之覆晶技術， 結合閃爍控制晶片與發光二極體，相較於先前技術需要 七條金屬導線(190〜196)，本實施例僅需要兩條金屬導線 (291、292)即可完成本實施例之閃爍型彩光紅綠藍發光二 極體裝置之封裝。 而在本發明另一實施例中，也可以直接將正電極211 銲接於正電極接位201上，將負電極212銲接於負電極 接位202上，更進一步簡化生產流程。 值得一提的是，在本領域具有通常知識者應知，各 廠商對於將紅光發光二極體221、綠光發光二極體222以 及藍光發光二極體223，以覆晶陣列技術覆晶裝設於閃爍 控制晶片覆晶次基座21的設計方法，以及閃爍控制晶片 覆晶次基座21與基板22之間的供電方式均不相同，因 此本發明之應用不應以此為限，其細節在此亦不予以贅 述0 綜上所述，相較於習知之閃爍型彩光紅綠藍發光二 極體裝置會光場偏移、發光效率不易集中、紅綠藍三色 混色不完全等缺點。本發明實施例之閃爍型彩光紅綠藍 D:\01-l LtndaXPK Pat\PK1022i doc 一 10—— ««/12/22/11:14 m 200827612 發光二極體裝置，因為將紅光發光二極體、綠光發光二 極體以及藍光發光二極體以正三角形之覆晶排列方式， 覆晶襄設於閃爍控制晶片覆晶次基座。因此，本發明實 施例達到簡化發光二極體封裝製程，並且提高裝置發光 效率與容積利用率，使彩光混色完全之目的。 雖然本發明已利用上述較佳實施例揭示，然其並非 用以限定本發明，任何熟習此技藝者在不脫離本發明之 精神和範圍之内，相對上述實施例進行各種更動與修改 仍屬本發明所保護之技術料，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。06/12/22/U . M AM 200827612 The diode device further includes a substrate 20. The substrate 20 has a positive electrode contact 201 and a negative electrode contact 202. The flicker control wafer overlay submount 21 further includes a positive electrode 211 and a negative electrode 212. The positive electrode 211 is connected to the positive electrode contact 201 through a first metal wire 291, and the negative electrode 212 is connected to the negative electrode contact 202 via a second metal wire 292. Therefore, the flicker control wafer flip-chip submount 21 can be supplied with power. Please compare FIG. 2 with FIG. 1 of the prior art. With appropriate flip chip technology, combined with the flicker control chip and the light emitting diode, only seven metal wires (190 to 196) are required in the prior art, and only two are needed in this embodiment. The metal wire (291, 292) can complete the packaging of the flashing color light red green blue light emitting diode device of the embodiment. In another embodiment of the present invention, the positive electrode 211 can be directly soldered to the positive electrode contact 201, and the negative electrode 212 can be soldered to the negative electrode contact 202 to further simplify the production process. It is worth mentioning that those skilled in the art should know that each manufacturer will flip the red light emitting diode 221, the green light emitting diode 222 and the blue light emitting diode 223 by flip chip array technology. The design method of the flash control wafer flip-chip submount 21 and the power supply mode between the flicker control wafer overlay submount 21 and the substrate 22 are different, so the application of the present invention should not be limited thereto. The details are not repeated here. In summary, compared with the conventional flashing color red, green, and blue light-emitting diode devices, the light field shift, the luminous efficiency is not easy to concentrate, and the red, green, and blue colors are incomplete. And so on. The glittering color red, green, and blue D of the embodiment of the present invention D: \01-l LtndaXPK Pat\PK1022i doc A 10 - ««/12/22/11:14 m 200827612 Light-emitting diode device, because the red light is illuminated The diode, the green light emitting diode and the blue light emitting diode are arranged in a regular triangle, and the flip chip is arranged on the flashing control wafer overlay submount. Therefore, the embodiment of the present invention achieves the goal of simplifying the LED packaging process, and improving the luminous efficiency and volume utilization of the device, so that the color mixing is complete. While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The invention is protected by the invention, and therefore the scope of the invention is defined by the scope of the appended claims.
D:\0l-l LindaXPIC Pat\PK 10225. doc 11 — 200827612 【圖式簡單說明】 圖1為習知之閃爍裂彩光紅綠藍發光二極體裝置。 圖2為本發明實施例之閃爍型彩光紅綠藍發光二極體裝 置0 圖3為本發明實施例之彩光紅綠藍混色圖。 圖4為本發明實施例之熱傳導示意圖。D:\0l-l LindaXPIC Pat\PK 10225. doc 11 — 200827612 [Simplified Schematic] FIG. 1 is a conventional scintillation cracking light red, green, and blue light emitting diode device. 2 is a glittering color red, green, and blue light emitting diode device according to an embodiment of the present invention. FIG. 3 is a color red, green, and blue color mixing diagram according to an embodiment of the present invention. 4 is a schematic view of heat conduction according to an embodiment of the present invention.
【主要元件符號說明】 10發光裝置 121紅光發光二極體 123藍光發光二極體 RL 接腳 BL接腳 191金屬導線 193金屬導線 195金屬導線 20基板 202負電極接位 11閃爍控制晶片 122綠光發光二極體 VDD接腳 GL接腳 190金屬導線 192金屬導線 194金屬導線 196金屬導線 201正電極接位 21閃爍控制晶片覆晶次基座 211正電極 221紅光發光二極體 223藍光發光二極體 292第二金屬導線 42 裸晶 432反射光線 212負電極 222綠光發光二極體 291第一金屬導線 41基質 431光線 44 反光層[Main component symbol description] 10 light-emitting device 121 red light-emitting diode 123 blue light-emitting diode RL pin BL pin 191 metal wire 193 metal wire 195 metal wire 20 substrate 202 negative electrode contact 11 flashing control chip 122 green Light-emitting diode VDD pin GL pin 190 metal wire 192 metal wire 194 metal wire 196 metal wire 201 positive electrode contact 21 flashing control wafer overlay sub-base 211 positive electrode 221 red light emitting diode 223 blue light Diode 292 second metal wire 42 bare crystal 432 reflected light 212 negative electrode 222 green light emitting diode 291 first metal wire 41 matrix 431 light 44 reflective layer
Pst\PKI022i <kic —12 —Pst\PKI022i <kic —12 —
恥/12/22/11:丨4 AM 200827612 次基座 45 銲點 46 47 熱逸散路徑Shame /12/22/11: 丨4 AM 200827612 Sub-base 45 Solder joints 46 47 Thermal escape path
D:\0I-l Lind*\PK Pat\PK 10225. doc ——13—— 06/12/22/ΜD:\0I-l Lind*\PK Pat\PK 10225. doc ——13—— 06/12/22/Μ