1308626 .97.10.09第95148371號專利說明書及申請專利範圍修正本 九、發明說明： . 【發明所屬之技術領域】 本發明是關於一種發光二極體(Light Emitting Device， LED)裝置，特別是關於一種可以改善發光二極體封裝製 程與發光效率之閃爍型(Flash)彩光紅綠藍發光二極體 (Color RGB LED)裝置。 【先前技術】 # 高功率發光二極體(High Power LED)在設計時，其考 量因素為電流分布、熱逸散、熱產生、發光效率等問題 〇 圖1為習知之閃爍型彩光紅綠藍發光二極體裝置。 如圖1所示，習知之閃爍型彩光紅綠藍發光二極體裝置 包括閃爍控制晶片11、紅光發光二極體121、綠光發光 二極體122及藍光發光二極體123。閃爍控制晶片u設 置在基板10之正電極1〇1(位於發光裝置左半邊)之上 鲁 ’其接腳VDD藉由金屬導線190連接至正電極，其 接腳RL、GL、BL分別藉由金屬導線191、192、193連 接至發光二極體121、122、123，且其接腳VSS藉由金 屬導線194連接至基板1〇之負電極1〇2(位於發光裝置 ' 10右半邊）。發光二極體121〜123設置在負電極1〇2之上 ，其中綠光發光二極體122及藍光發光二極體123另外 分別藉由金屬導線195及196連接至負電極1〇2。如此， 閃燦控制晶片11便可以控制發光二極體121〜123之閃爍 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 除此之外，此領域還提出了許多不同的二極體封裝 構造。舉例而言，例如中華民國公告第239,670號「發光 二極體封裝結構及其製作方法」發明專利，此專利即藉 由在絕緣石夕基板上形成之複數個金屬導線，電性連接配 置在絕緣矽基板上之發光二極體與絕緣矽基板上之正負 電極。例如中華民國公告第295,340號「發光二極體之封 裝結構」新型專利，此專利係將發光二極體貼附在導電1308626 .97.10.09 Patent No. 95148371 and the scope of the patent application. The present invention relates to a light emitting device (LED) device, in particular A flash RGB red, green, and blue light emitting diode (Color RGB LED) device that can improve the LED package process and luminous efficiency. [Prior Art] # High Power LEDs are designed for current distribution, thermal dissipation, heat generation, and luminous efficiency. Figure 1 shows the conventional flashing red and green colors. Blue LED device. As shown in Fig. 1, a conventional scintillation type color red, green, and blue light emitting diode device includes a scintillation control wafer 11, a red light emitting diode 121, a green light emitting diode 122, and a blue light emitting diode 123. The flicker control chip u is disposed on the positive electrode 1〇1 of the substrate 10 (located on the left half of the light emitting device). The pin VDD is connected to the positive electrode by the metal wire 190, and the pins RL, GL, and BL are respectively The metal wires 191, 192, 193 are connected to the light-emitting diodes 121, 122, 123, and their pins VSS are connected to the negative electrode 1 〇 2 of the substrate 1 by metal wires 194 (located on the right half of the light-emitting device '10). The light-emitting diodes 121 to 123 are disposed on the negative electrode 1〇2, and the green light-emitting diode 122 and the blue light-emitting diode 123 are additionally connected to the negative electrode 1〇2 by metal wires 195 and 196, respectively. In this way, the flash control chip 11 can control the flashing of the light-emitting diodes 121 to 123. 1308626 97.10.09 Patent No. 95148371 and the patent application scope revision. In addition, many different diodes are proposed in the field. Package construction. For example, for example, the invention patent of "Light Emitting Diode Package Structure and Manufacturing Method" of the Republic of China Announcement No. 239,670, which is electrically connected to the insulation by a plurality of metal wires formed on the insulating Shishi substrate The light-emitting diode on the substrate and the positive and negative electrodes on the insulating germanium substrate. For example, the Republic of China Announcement No. 295,340 "New Sealing Structure for Light-Emitting Diodes", which attaches a light-emitting diode to a conductive
基板上，藉以減少發光二極體之封裝體積。另外還有例 如中華民國公告第248,221號「LED覆晶晶片之凸塊構 這」發明專利，此專利是在發光二極體上設置銲墊，並 且在銲墊上设置具銲料之間隔體，用以接合於發光二極 體之載體。 可惜的是，這些專利所揭露的内容依然無法解決習 ^之閃爍縣光紅綠藍發光二極體裝置，其發光二極體 晶粒無法設置在光學中心、（如圖1所示，發光二極體 121〜123在發光裝置1()之右半邊發光），造絲場偏移、 發光效率不易集中、紅綠藍三色混色不完全等缺點。另 驾知裝置最少需要打裝七條金屬導線，亦會造成 封農打線製程複雜、光電轉換效率低落、排列空間與容 積空間彻不良等缺點。 '、 【發明内容】 本發明的目的就是在提供一種閃爍型彩光紅綠藍發 由:極^置’使用覆晶陣_ip Chip Array)技術，經 .別設計之覆晶晶粒排列，可以簡化閃爍型彩光紅綠 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 藍發光二極體封裝製程，並且提高裝置發光效率與容積 利用率，使彩光混色完全。On the substrate, the package volume of the light-emitting diode is reduced. In addition, there is, for example, the invention patent of the "Bumping Structure of LED Flip Chip" issued by the Republic of China Announcement No. 248,221, which is provided with a solder pad on the light emitting diode, and a solder spacer is disposed on the solder pad for A carrier bonded to the light emitting diode. It is a pity that the contents disclosed in these patents still cannot solve the light red, green and blue light-emitting diode device of the Xingzhi County, and the light-emitting diode crystal grains cannot be placed in the optical center, as shown in Figure 1. The polar bodies 121 to 123 emit light on the right half of the light-emitting device 1 (), and the defects such as the deviation of the yarn-making field, the inconvenience in luminous efficiency, and the incomplete color mixing of the red, green and blue colors are incomplete. At the same time, it is necessary to install at least seven metal wires for the device, which will also cause defects such as complicated sealing and wiring processes, low photoelectric conversion efficiency, poor arrangement space and volumetric space. 'The Summary of the Invention' The object of the present invention is to provide a flashing type of light red, green, and blue hair by: "setting the use of flip chip _ip Chip Array" technology, by the design of the flip chip grain arrangement, The invention can simplify the flashing color red and green 1308626 97.10.09 Patent No. 95148371 and the patent application scope to modify the blue light emitting diode packaging process, and improve the luminous efficiency and volume utilization of the device, so that the color mixing is complete.
本發明提出一種閃爍型彩光紅綠藍發光二極體裝置 ，其包括一紅光發光二極體、一綠光發光二極體、一藍 光發光二極體以及-嶋控制晶片覆晶次基座(触讀nt) 。紅光發光二極體用以發出紅光。綠光發光二極體用以 發出綠光。藍光發光二極體用以發出藍光。關控制晶 片覆晶次基座用以控制紅光發光二極體、綠光發光二極 體以及藍S發光—極體之發光。其中，紅光發光二極體 、綠光發光二極體以及藍光發光二極體以正三角形之覆 晶排列方式，覆晶裝設於閃爍控制晶片覆晶次基座。 依本發賴佳實施綱述之関鄉光紅綠藍發光 二極體裝置，更包括—基板(Base)。基板具有—正電極接 位以及一負電極接位。 依本發明健實施觸述之聊㈣光紅綠藍發光 二極體裝置，上述関控制晶片覆晶次基座包括一正電 極以及-負電極^正電極係透過—第―金屬導線連接正 電極接位，負電極係透過—第二金屬導線連接負電極接 二· 依本發明較佳實施例所述之閃燦型彩光紅綠藍發夫 極體裝置’上述閃爍控制晶片覆晶次基座包括一正雙 士 乂及貞電極，正電極銲接於正電極接位，負電極 接於負電極接位。 【實施方式】 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 ' 為讓本發明之上述及其他目的、特徵及優點能更明 顯錢’下文特舉本發明之較佳實施例，並配合^附圖 ^ 式，作詳細說明如下： σ - 圖2為本發明實施例之閃爍型彩光紅綠藍發光二極 體裝置。請參考圖2，本發明實施例之閃燦型彩光紅綠藍 發光二極體裝置包括一紅光發光二極體221、—綠光發光 二極體222、-藍光發光二極體223以及—閃燦控制^片 • *晶次基座2卜紅光發光二極體221用以發出紅光。綠 光發光二極體222用以發出綠光。藍光發光二極體223 用以發出藍光。問爍控制晶片覆晶次基座21用以控制紅 光發光二極體22卜綠光發光二極體222以及藍光發光二 極體之發光223。 圖3為本發明實施例之彩光紅綠藍混色圖。請參考 圖3，彩光之主要色光為紅光311、綠光312以及藍光 313。紅光311與綠光312疊色可得黃光321，綠光312 φ ” "^光313疊色可得青綠光322 ’而藍光313與紅光311 疊色可得紫光323。至於紅光3U、綠光312與藍光313 疊色’則可得白光33。 ' 請同時參考圖2以及圖3，因此本實施例將紅光發光 —極體22卜綠光發光二極體222以及藍光發光二極體 223以正二角形之覆晶排列方式，分別在正三角型之三個 頂點，覆晶裝設於閃爍控制晶片覆晶次基座21。藉此使 紅光發光二極體221發出之紅光311、綠光發光二極體 222發出之綠光312以及藍光發光二極體223發出之藍光 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 • 313，而能夠完全混色成白光33。以便改良先前技術之閃 爍型彩光紅綠藍發光二極體裝置，在裝置搖晃時會產生 ' 色偏之缺點。同時，發光二極體221〜223所形成之正三 • 角形，其中心位在本實施例之閃爍型彩光紅綠藍發光二 極體裝置之光學中心(如圖2所示，發光二極體221〜223 位在發光裝置10之中心發光）。因為設置在光學中心， 更可以集中發光光場，提高發光效率。 φ 圖4為本發明實施例之熱傳導示意圖。請參考圖4， 閃爍型彩光紅綠藍發光二極體之覆晶技術的特點在於， 閃爍型形光紅綠藍發光二極體（如圖2之發光二極體 221〜223)之基質（Substrate)41在於裸晶42之上。因此裸 晶42除了可以直接透過透光的基質41發出光線431，更 可透過反光層44發出反射光線432，更進一步提高光輸 出量。同時，覆晶技術由於將裸晶42透過銲點45連接 於次基座(SUbm〇unt)46,因此獲得良好的熱逸散路徑47 • ，得到良好的熱傳導效能。在本實施例中，次基座46設 料閃爍控制晶片覆晶次基座2卜具有囉控制晶片的 功月b，此夠控制閃爍型彩光紅綠藍發光二極體(如圖2之 、 發光二極體221〜223)之發光。 • 另外以覆晶陣列技術將紅光發光二極體221、綠光 發光二極體222以及藍光發光二極體223覆晶裝設於閃 爍控制晶片覆晶次基座21更可以簡化問燦型彩光紅綠藍 發光二極體封裝製程，並且提高裝置容積利用率。 4再次參考圖2 ’本實施例之閃爍型彩光紅綠藍發光 1308626 —97.10.09第95148371號專利說明書及申請專利範困修正本 一極體裝置更包括基板20。基板20具有一正電極接位 . 201以及一負電極接位2〇2。閃爍控制晶片覆晶次基座21 更包括一正電極211以及一負電極212。正電極211透過 一第一金屬導線291連接正電極接位；2〇1，負電極212透 過一第一金屬導線292連接負電極接位202。因此，閃爍 控制晶片覆晶次基座21便可以得到電源供應。 請比較圖2與先前技術之圖1，經適當之覆晶技術， • 結合閃爍控制晶片與閃爍型彩光紅綠藍發光二極體，相 較於先前技術需要七條金屬導線(19〇〜196)，本實施例僅 需要兩條金屬導線(291、292)即可完成本實施例之閃爍型 彩光紅綠藍發光二極體裝置之封裝。 而在本發明另一實施例中，也可以直接將正電極211 銲接於正電極接位201上，將負電極212銲接於負電極 接位202上，更進一步簡化生產流程。 值得一提的是，在本領域具有通常知識者應知，各 瞻 廠商對於將紅光發光二極體221、綠光發光二極體222以 及藍光發光二極體223，以覆晶陣列技術覆晶裝設於閃爍 控制晶片覆晶次基座21的設計方法，以及閃爍控制晶片 、覆晶次基座21與基板22之間的供電方式均不相同，因 . 此本發明之應用不應以此為限，其細節在此亦不予以贅 述。 綜上所述，相較於習知之閃爍型彩光紅綠藍發光二 極體裝置會光場偏移、發光效率不易集中、紅綠藍三色 混色不完全等缺點。本發明實施例之閃爍型彩光紅綠藍 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 發光二極體裝置，因為將紅光發光二極體、綠光發光二 極體以及藍光發光二極體以正三角形之覆晶排列方式， 覆晶裝設於閃爍控制晶片覆晶次基座。因此，本發明實 施例達到簡化閃爍型彩光紅綠藍發光二極體封裝製程， 並且提尚裝置發光效率與容積利用率，使彩光混色完全 之目的。The invention provides a scintillation type color light red green blue light emitting diode device, which comprises a red light emitting diode, a green light emitting diode, a blue light emitting diode and a germanium control wafer flip chip subunit. Block (touch nt). The red light emitting diode is used to emit red light. The green light emitting diode is used to emit green light. The blue light emitting diode is used to emit blue light. The control wafer flip-chip sub-base is used to control the red light emitting diode, the green light emitting diode, and the blue S light emitting body. The red light emitting diode, the green light emitting diode and the blue light emitting diode are arranged in an equilateral triangle, and the flip chip is mounted on the flashing control wafer overlay submount. According to this implementation of the Laijia implementation of the Guanxiang light red green blue light-emitting diode device, including - substrate (Base). The substrate has a positive electrode contact and a negative electrode contact. According to the present invention, the implementation of the touch description (4) light red green blue light emitting diode device, the above-mentioned control wafer wafer sub-base includes a positive electrode and - negative electrode ^ positive electrode system through - the first - metal wire is connected to the positive electrode In the second position, the negative electrode is connected to the second metal wire to connect the negative electrode to the second electrode. According to the preferred embodiment of the present invention, the flash-light color red, green, and blue light-emitting device is described above. The seat includes a positive double scorpion and a sputum electrode, the positive electrode is soldered to the positive electrode and the negative electrode is connected to the negative electrode. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The details are as follows: σ - FIG. 2 is a flashing type color light red green blue light emitting diode device according to an embodiment of the present invention. Please refer to FIG. 2 , the flash-light color red, green, and blue light emitting diode device of the embodiment of the invention includes a red light emitting diode 221 , a green light emitting diode 222 , a blue light emitting diode 223 , and —Flash control ^ film • * Crystal base 2 red light emitting diode 221 is used to emit red light. The green light emitting diode 222 is used to emit green light. The blue light emitting diode 223 is used to emit blue light. The spoke control wafer flip-chip submount 21 is used to control the red light emitting diode 22, the green light emitting diode 222, and the blue light emitting diode 223. FIG. 3 is a color red, green, and blue color mixture diagram according to an embodiment of the present invention. Referring to FIG. 3, the main color lights of the color light are red light 311, green light 312, and blue light 313. The red light 311 and the green light 312 are superimposed to obtain yellow light 321 , the green light 312 φ ” " ^ light 313 color can obtain cyan light 322 ' and the blue light 313 and red light 311 color can obtain purple light 323. As for red light 3U, green light 312 and blue light 313 are stacked to obtain white light 33. 'Please refer to FIG. 2 and FIG. 3 at the same time, so this embodiment will have red light emitting body 22 green light emitting diode 222 and blue light emitting diode. The body 223 is arranged in a regular rectangular shape, and is respectively arranged at the three vertices of the positive triangle shape, and is overlaid on the flicker control wafer flip-chip sub-mount 21. Thereby, the red light emitting diode 221 emits red light. 311, the green light 312 emitted by the green light emitting diode 222, and the blue light of the blue light emitting diode 223, 1308626, 97.10.09, No. 95148371, and the patent application scope revision 313, can be completely mixed into white light 33. In order to improve the prior art scintillation type light red, green, and blue light-emitting diode device, a defect of color shift occurs when the device is shaken. At the same time, the positive three-corner shape formed by the light-emitting diodes 221 to 223 has a center at The glittering color red, green, and blue of this embodiment The optical center of the photodiode device (as shown in Fig. 2, the light-emitting diodes 221 to 223 are illuminated at the center of the light-emitting device 10). Because it is disposed at the optical center, the illuminating light field can be concentrated to improve the luminous efficiency. 4 is a schematic diagram of heat conduction according to an embodiment of the present invention. Referring to FIG. 4, the flip chip technology of the glittering color red, green, and blue light emitting diode is characterized by a flashing shape, a light red, green, and blue light emitting diode (see FIG. 2). Substrate 41 of the light-emitting diodes 221 to 223) is above the bare crystal 42. Therefore, the bare crystal 42 can emit light 431 directly through the light-transmitting substrate 41, and can emit reflected light 432 through the reflective layer 44. Further, the light output is further increased. At the same time, the flip chip technology is connected to the submount (46) through the solder joint 45, so that a good thermal dissipation path 47 is obtained, and good heat conduction performance is obtained. In this embodiment, the sub-base 46 is provided with a flicker control wafer flip-chip sub-mount 2 having a power-on-b control wafer, which is sufficient to control the scintillation-type color red, green, and blue light-emitting diodes (see FIG. 2, Light emitting diodes 221~223) In addition, the flip-chip array technology, the red light emitting diode 221, the green light emitting diode 222, and the blue light emitting diode 223 are flip-chip mounted on the flashing control wafer flip-chip sub-base 21, which can simplify the problem. Type color light red green blue light emitting diode packaging process, and improve device volume utilization. 4 Referring again to FIG. 2 'The flashing type color light red green blue light 1308626 - 97.10.09 No. 95148371 patent specification and application The patented device further includes a substrate 20. The substrate 20 has a positive electrode contact 201 and a negative electrode contact 2〇2. The flicker control wafer overlay submount 21 further includes a positive electrode 211 and a negative electrode 212. The positive electrode 211 is connected to the positive electrode through a first metal wire 291; the second electrode 212 is connected to the negative electrode contact 202 via a first metal wire 292. Therefore, the flicker control wafer flip-chip submount 21 can be supplied with power. Please compare Figure 2 with Figure 1 of the prior art, with appropriate flip chip technology, • Combine the flicker control chip with the flashing color red, green, and blue light emitting diodes, which requires seven metal wires (19〇~196) compared to the prior art. In this embodiment, only two metal wires (291, 292) are required to complete the package of the flashing color red, green, and blue light emitting diode device of the embodiment. In another embodiment of the present invention, the positive electrode 211 can be directly soldered to the positive electrode contact 201, and the negative electrode 212 can be soldered to the negative electrode contact 202 to further simplify the production process. It is worth mentioning that those skilled in the art should know that the red light emitting diode 221, the green light emitting diode 222 and the blue light emitting diode 223 are covered by a flip chip array technology. The design method of the crystal mounting sub-base 21 of the scintillation control wafer, and the power supply mode between the flash control wafer, the flip-chip sub-mount 21 and the substrate 22 are different, because the application of the present invention should not be This is a limitation, and details thereof are not described herein. In summary, compared with the conventional flashing color red, green, and blue light-emitting diode devices, the light field shift, the luminous efficiency is not easy to concentrate, and the red, green, and blue colors are incomplete. The present invention discloses a flashing color light red green blue 1308626 97.10.09 Patent No. 95148371 and a patent application scope modification of the light emitting diode device because of a red light emitting diode, a green light emitting diode, and a blue light The light-emitting diodes are arranged in a flip-chip arrangement of equilateral triangles, and the flip-chips are mounted on the flip-chip sub-base of the scintillation control wafer. Therefore, the embodiment of the present invention achieves the simplified flashing color red, green, and blue light emitting diode packaging process, and improves the luminous efficiency and volume utilization of the device, so that the color mixing is complete.
雖然本發明已彻±述較佳實闕揭*，然其並非 ㈣限定本發明’任域習此技藝者在残離本發明之 精ίίΪ圍之内’相對上述實施例進行各種更動與修改 仍屬^明所保護之技術_，因此本發明之 當視後附之巾請專利範圍所界定者鱗。 、 1308626 97.10.09第95148371號專利說明書及申請專利範 【圖式簡單說明】 圖1為習知之閃燦型彩光紅綠藍發光二極體裝置。 圖2為本發明實闕之卩侧縣光紅雜發光二極體裝 置。 圖3為本發明實施例之彩光紅綠藍混色圖。 圖4為本發明實施例之熱傳導示意圖。 【主要元件符號說明】 “Although the present invention has been described in detail, it is not intended to limit the invention, and it is intended to be within the scope of the invention. It belongs to the technology that is protected by Ming, so the scope of the invention is defined by the scope of the patent. 1308626 97.10.09 Patent No. 95148371 and Patent Application Specification [Simplified Schematic] FIG. 1 is a conventional flash-type color light red green blue light emitting diode device. Fig. 2 is a schematic view of a light red hybrid light-emitting diode device of the county side of the present invention. FIG. 3 is a color red, green, and blue color mixture diagram according to an embodiment of the present invention. 4 is a schematic view of heat conduction according to an embodiment of the present invention. [Main component symbol description]
10發光裝置 121紅光發光二極體 123备光發光二極體 RL接腳 BL接腳 191金屬導線 193金屬導線 195金屬導線 20基板 202負電極接位 11閃爍控制晶片 122綠光發光二極體 VDD接腳 GL 接腳 190金屬導線 192金屬導線 194金屬導線 196金屬導線 201正電極接位 21閃爍控制晶片覆晶二欠基座 211正電極 221紅光發光二極體 223藍光發光二極體 292第二金屬導線 42裸晶 432反射光線 212負電極 222綠光發光二極體 291第一金屬導線 41基質 431光線 44 反光層 1308626 97.10.09第95148371號專利說明書及申請專利範圍修正本 • 45 銲點 46 次基座 47 熱逸散路徑10 illuminating device 121 red light emitting diode 123 standby light emitting diode RL pin BL pin 191 metal wire 193 metal wire 195 metal wire 20 substrate 202 negative electrode contact 11 flashing control wafer 122 green light emitting diode VDD pin GL pin 190 metal wire 192 metal wire 194 metal wire 196 metal wire 201 positive electrode contact 21 flashing control wafer flip chip two underlying 211 positive electrode 221 red light emitting diode 223 blue light emitting diode 292 Second metal wire 42 bare crystal 432 reflected light 212 negative electrode 222 green light emitting diode 291 first metal wire 41 substrate 431 light 44 reflective layer 1308626 97.10.09 Patent No. 95148371 and the scope of the patent application revision • 45 welding Point 46 times pedestal 47 thermal escape path
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