TWI278131B - Package structure for compound light emitting diode - Google Patents

Package structure for compound light emitting diode Download PDF

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Publication number
TWI278131B
TWI278131B TW94118495A TW94118495A TWI278131B TW I278131 B TWI278131 B TW I278131B TW 94118495 A TW94118495 A TW 94118495A TW 94118495 A TW94118495 A TW 94118495A TW I278131 B TWI278131 B TW I278131B
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Taiwan
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light
emitting diode
package structure
light emitting
composite
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TW94118495A
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Chinese (zh)
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TW200644272A (en
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Pai-Ling Sung
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Pai-Ling Sung
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Abstract

The invention provides a package structure for compound light emitting diode. It comprises an upper light emitting diode package structure, a lower light emitting diode package structure and the unity package. The upper light emitting diode package structure includes the upper substrate, which has a hollow structure; and the transparent chip of upper light emitting diode locating in the hollow structure covered and fixed by the transparent filler. The lower light emitting diode package structure includes the lower substrate; and the lower light emitting diode chip locating on the lower substrate packaged in the hollow structure and having a transparent protective layer.

Description

Π78131 r 九、發明說明: 【發明所屬之技術領域】Π78131 r IX. Description of the invention: [Technical field to which the invention belongs]

—本發明係關於一種發光二極體封裝結構,特別是一種複合發 光二極體封裝結構。 口 X 【先前技術】 、、既白光LED是最被看好的LED新興產品,其在照明市場的發展 值知期待。與白熾鎢絲燈泡及螢光燈相比,LED具有I#并丨厂夕 顆:多種組合)、發熱量低(沒有熱幅射)、耗電量小(低電:二 ,流起動)、壽命長(1萬小時以±)、反應速度快(可在高頻操作)、 s保(耐震、耐衝擊不易破、廢棄物可回收,沒有污染)、可平面 封裳易開發成輕薄短小產品等優點,沒有白熾燈泡高耗電、易碎 及日秘廢棄物含汞污染的問題等缺點,是被業界看好在未來10 年内,成為替代傳統照明器具的一大潛力商品。 鲁 知著發光二極體LED製造工藝的不斷進步和新型材料(氮化 物晶體和螢光粉)的開發及應用,使發白色光的㈣半導體固體 光源性能不斷完善並進人實贿段。所謂白光是多種顏色混合而 成的光,以人類眼睛所能見的白絲式至少須兩種光混合,如二 j長光(藍色光+黃I光)或三波長光(藍色光+綠色光+紅色光)。目 前已商品化的產品僅有二波長藍光單晶片加上寫黃色榮光粉, 例如日亞化學(Nichia)以460nm波長的城沾藍光晶粒塗上一層 YAG逢光物貝,利用皇光led照射此一螢光物質以產生與藍光互 補的555nm波長黃光,再利用透鏡原理將互補的黃光、藍光予以 1278131 ,便可得出肉眼所需的白光。另—方面或是以藍色晶片、綠 片纟^ ^ #分繼生三波絲,再藉自封裝構造的設計混 光。而未來較被看好的另有以無機紫外光晶片加R· G. Β三顏 色螢光粉所混出的白光。 ^旦^目前來說’不論是以藍光單晶片加上黃色螢光粉混出白 j ’或是以三種波長發光晶片構裝混成白光都各有其缺點。例如 籲前者利用的螢光粉在使用一段時間後會衰減,導致產生的白光會 有色準的問題;而後者需利用到三種波長之晶片,製造成本較高。 私目前如自光賴構仍存社述關題,时其必要針 對混出白光的麵再财善,_崎健造穌,使其更具競 爭優勢,促進白光發光二極體的普及ό 【發明内容】 鑒於以上的問題,本發明的主要目的在於提供—種複合發光 -極封裝結構,藉由上下發光二極體晶片之封裝結構,混出單一 顏色之光源,藉以大體上解決先前技術所存在之問題。藉由本發 明之封裝結構設計,可根據所需光源之波長,選擇上下搭配之發 光二極體晶片,如此便能輕易混出所需之光源。例如上發光二極 體曰曰片可為黃色發光二極體晶片,下發光二極體晶片可為藍色發 光二極體晶片,如此便可混出白色光源。 另一方面,藉由上下發光二極體晶片各別之電路設計,更可 控制其-起發光亦或各別單獨發光或控制其個別電流大小以產生 混色之變化,如此更增添本發明應用之靈活性。 1278131 因此’為達上述目的,本發明所揭露之一種複合發光二極體 封裝結構’包含:-上發光二極體封裝結構,包含:具有—縷空結構 之一上基板;及-上發光二極體透日m位於該鏤空結構中°並 猎由-透光填充物上下包覆固辦其中;及—下發光二極體封裝 結構,與該上發光二極體封裝結構—體封裝,包含·—下基板;^ 一下發光二極體晶片’位_τ基板±,並聽㈣鏤 具有一透光保護層。 稱干 紐ίΤ"發光二極體封錢構係可11由該透絲朗與該透 結合充物之緒㈣合及/或魏訂基板與該上餘之黏結而 上述上發光二極體咖晶4可藉—以上接線電性連接於上 j;上述下發光二極體翻晶片可藉-以上接線電性連接於下 土板。而發出之光源可分別為互補絲,例如M光與黃光。 再者,透秘充物與透光保護層係可—體形成,而成為 合發光二極體結構之蓋體。 解ΐ使對本發明的目的、構造、特徵、及其功能有進-步的瞭 =祕ΐ實施例詳細朗如下。以上之本發日肪容之說明 也只知方式之°兒明係用以示範與解釋本發明之原理,並且 Μ、本發明之專利申請朗更進—步之解釋。 '下在^方式巾詳細敘述本發明之詳細特徵以及優點,其 谷足以使任何熟習_技藝者了解本剌之技術内容並據以實 也’且根據本說明書所揭露之内容、申請專利範圍及圖式,任何 1278131 』白相關技藝者可輕易地理解本發明相關之目的及優點。 【實施方式】 明參閱第丨圖與第2圖,分別為本發明複合發光二極體封裝 結構構裝前與構裝後之一較佳實施例。 —、=圖所不,本發明複合發光二極體封裝結構包含兩發光二極 體封^部份,—為上發光二極體封裝結構2,-為下發光二極體 懷’、。構4。下發光二極體封裝結構4之發光二極 •㈣係對著該上餘二極體封發光二 &4^4全°以下將詳述其各別組件之功能。 .上發光二極體封裝結構2,包含具有鏤空結構3之-上基板 L上發光二極體晶片5位於該鏤空結構3並藉由透光填充物上 了包覆固定於其巾形成麵7。該蓋體7為透光材料所組成,故 雜裝結敎得該上發光二歸晶# 5得以上下發光。 上基板卜可為金屬基板或非金屬基板,該基板工外包含提 籲 Mx光一極體晶片5電性連接之接墊u或者電性圖樣。各接墊Μ 或電性圖樣間係不連通成絕緣隔離狀態;接線9可藉一導電膠(圖 中未示)塗佈以麵合連接接墊n與發光二極體晶片5。為易於焊 接而不至於脫落,導電膠—般均以金、銀、錫、鉻、鎳或者其合 金作為導電㈣,由於金师較貴,且黃色光的反射效果較差, 所以較少被採用。 上發光二極體晶片5,可為任何習知或商業可得之各種顏色 之晶片,但需為上下可發光晶片或為透明晶片以提供上下方向之 1278131 Λ 光源。 下發光二極體封裝結構4,具有一下基板13 ; 一下發光二極 體晶片15位於該基板13上。 下基板13,可為金屬基板或非金屬基板,該基板13上可包 含提供發光二極體晶片15電性連接之接墊或者電性圖樣。各 接墊19或電性圖樣間係不連通成絕緣隔離狀態;若提供的為接墊 19,該接線17係可藉一導電膠(圖中未示)塗佈以耦合連接接墊 ❿19與發光二極體晶片15。為易於焊接而不至於麟,導電膠一般 均以金、銀、錫、鉻'鎳或者其合金作為導電材料,由於金材質 較貝’且育色光的反射效果較差,所以較少被採用。 下發光二鋪晶>} 15,可為任何習知或商業可得之各種顏色 之晶片。 蓋體7,由透光材料組成,可利用填充填充材料於鎮空結構3 中覆盍上發光二極體晶片5與接線9而形成,所利用之技術包含 •低壓成型的鑄模(modling)技術或封膠(encapsulated)技術以完 成該蓋體7的保護功能。 另外,該下發光二極體封裝結構2與上發光二極體封裝結構 4曰各自組裝日守’另覆蓋例如一透光保護層21以完成該發光二極體 晶片的保護功能。該透光保護層21也係由透光材料組成,利用低 〇 是環Us) 乂下將洋述上下發光二極體封裝結構之接合過程。 1278131 m _各自魄好之上下發光二極體封裝結構2,4之後,使下發光 極體、、。構4對齊上發光二極體結構2之触雜,再藉由上基 —/、 土板13之接合或疋藉由一黏膠6使透光保護層21與蓋 =黏合而結合’便完成了本發賴合發光二極體封裝結構^製 f外’上述利用之下發光二極體封褽結構也可為SMD構形, ”中晶片可直接與接墊或電路圖樣19接_提供電性連接,而僅 •另而利用-條接線π與另一側接塾連接,如此形成之複合發光二 極體封裝結構便如第3圖所示。 方面’如第4圖所示,為本發明複合發光 構構裝後之再—繼_。U陳鍾繼構Μ ^ 在下發光二極構4對齊上發光二極體結構2之鏤空部份3 後’再填充透光填充材料於輯空結構3帽蓋該上下發光二極 體晶片5,15及其接線9,17,藉一體成形形成蓋體7而結合上下兩 鲁者’便完成了本發明複合發光二極體封裝結構之製作。 其中上下基板1,13之接合可透過各自之接塾η,ΐ9。 同樣的如第5圖所示,第4圖所示的複合發光二極體封果 結構中的下發光二極體域結構也可為動構形,僅具有一條接 線,而利用“與碰錢路· 19之直接接觸提供電性連接。 其中上下發光二極體封裝結構Μ之電路設計係可根據需求 而定,例如上下發光二極體封襄結構2,4可採並聯或串聯之電路 設計。另外’上下發光二極體封裝結構2,4除可採同時發光模式 10 1278131 i 光效果外,也可_各狀f路設計使其輯需要可同 各別發光。上述電路設計_知,且非本發明之重點, 故在此便不再贅述。 該』76 =1 圖中本發明該較佳實施例之俯視圖,用以顯示 曰Hr 空部份的情形,上下對應之發光二極體 曰曰片所兔出之錢’係透職蓋體7而發射,為單發光 裝結構。圖中所示之該蓋體7為圓形,亦 更可以任何形狀之蓋體,來達到本發明的^ 例並非用於限定本發明的範圍。 月之心 2據以上_,树賴合奸二顧縣轉 二極體封裝結構與上透明發光二極體封裝結構對齊妹人達 本發明拘咖絲,因此藉由 导、/ 1上下發光—鋪縣結構之搭配L斤需波 發光二極體縣結構發出藍光,上發光二 ,_光,上發光二極趙封裝:二= =體發时光;下發光二極體封裝結構發㈣光 極體封裝轉糾紅光時,便可透過蓋體發出黃光。 不作=猎由上Tt路之各舰計,該複合發光二極體封裝β構 光效果,也可_要單獨透過蓋體紐ί光 極體封裝結構或下發光二極體封裝結構之色光。 經由上述,本發明僅需利用上下兩發光二極體晶片便可混出 1278131 白光,不需像f知_到易衰減之螢練,也不需到三個發 ^極體晶片’故確能達聊低製造成本之效果。另外藉由電路 »又。十上下發光—極體晶片可同時或各別發光,更能增添 之靈活性。 ”再者’透過本發明’可根據所f之光源選擇適宜之上下發光 光源作格配而獲得較佳之發光效果。 雖然本發明以前述之實關揭露如上,然其並_以限定本 發明。在不脫離本發明之精神和範圍内,所為之更動與潤飾,均 屬本發明之專利保護範圍。關於本發明所界定之保護 所附之申請專利範圍。 【圖式簡單說明】 第1圖為本發賴合發光二鋪域結構難前之 施例; 佳員 第2圖為本發贿合發光二鋪雜轉雛後之—較佳银 施例; 貝 第3圖為本發明複合發光二極體封裝結構構裝後之另 實施例; 平乂1 土 第4圖為本發赌合發光二極體塊結構魏後之再 實施例; 平乂住 第5圖為第4圖中複合發光二極體封裝結構構裝後 佳實施例;及 早乂 苐6圖為第2圖中本發觀較佳實麵^俯視圖。 12 1278131 【主要元件符號說明】 1 上基板 2 上發光二極體封裝結構 3 鏤空結構 4 下發光二極體封裝結構 5 上發光二極體晶片 6 黏膠 7 蓋體 9 接線 11 接墊 13 下基板 15 下發光二極體晶片 17 接線 19 接墊 21 透光保護層 13- The present invention relates to a light emitting diode package structure, and more particularly to a composite light emitting diode package structure. Mouth X [Prior Art], white LED is the most promising LED emerging product, and its development in the lighting market is expected. Compared with incandescent tungsten bulbs and fluorescent lamps, LEDs have I# and 丨 夕 :: various combinations), low heat generation (no heat radiation), low power consumption (low power: two, flow start), Long life (1,000 hours to ±), fast reaction speed (can be operated at high frequency), s guarantee (shockproof, impact resistant, not easy to break, waste can be recycled, no pollution), can be developed into a thin and light short product Other advantages, such as the lack of incandescent bulbs, high power consumption, fragility and the problem of mercury pollution in daily wastes, are the potential products of the industry to replace traditional lighting fixtures in the next 10 years. Lu knows the continuous progress of the LED manufacturing process and the development and application of new materials (nitride crystals and phosphors), so that the performance of the (four) semiconductor solid-state light source that emits white light is constantly improving and entering the bribe segment. The so-called white light is a mixture of light of various colors. At least two kinds of light are mixed in the white wire type that can be seen by human eyes, such as two long light (blue light + yellow I light) or three wavelength light (blue light + green light). + red light). At present, the commercialized products only have a two-wavelength blue single-chip plus a yellow glory powder. For example, Nichia uses a 460 nm wavelength blue-grained blue crystal grain coated with a layer of YAG luminescent light shell, which is illuminated by Huangguang LED. The phosphor material produces a yellow light of 555 nm wavelength complementary to the blue light, and the complementary yellow and blue light is applied to the 1278131 by the lens principle to obtain the white light required by the naked eye. On the other hand, it is a blue chip, a green chip, a ^ ^ # sub-successful three-wave, and then borrowed from the design of the package structure. In the future, it is more optimistic about the white light mixed with the inorganic ultraviolet light wafer plus R·G. Β three color fluorescent powder. At present, there are disadvantages in that either a blue single-chip plus yellow phosphor powder is mixed with white j ' or a three-wavelength light-emitting chip is used to mix and white light. For example, the phosphor used by the former will be attenuated after a period of use, resulting in the problem of white color produced by the former; the latter requires the use of three wavelengths of the wafer, and the manufacturing cost is high. At present, if the private sector still has its own problems, it is necessary to make good money for the face mixed with white light. _Saki Jian makes it more competitive and promotes the popularity of white light-emitting diodes. In view of the above problems, the main object of the present invention is to provide a composite light-emitting device structure, which is provided with a single color light source by a package structure of upper and lower light emitting diode chips, thereby substantially solving the prior art. The problem. With the package structure design of the present invention, the light-emitting diode chip can be selected and matched according to the wavelength of the desired light source, so that the desired light source can be easily mixed. For example, the upper light emitting diode chip may be a yellow light emitting diode chip, and the lower light emitting diode chip may be a blue light emitting diode chip, so that a white light source may be mixed. On the other hand, by the separate circuit design of the upper and lower LED chips, it is more controllable to illuminate or individually illuminate or control the individual current magnitudes to produce a change in color mixture, thus further increasing the application of the present invention. flexibility. 1278131 Therefore, in order to achieve the above object, a composite light emitting diode package structure disclosed in the present invention comprises: an upper light emitting diode package structure, comprising: a substrate having a hollow structure; and an upper light emitting diode The polar body is located in the hollow structure and is hung and covered by the light-transparent filler; and the lower light emitting diode package structure and the upper light emitting diode package structure are packaged, including · The lower substrate; ^ the light-emitting diode wafer 'bit_τ substrate ±, and listen to (four) 镂 has a light-transmissive protective layer. Weighing the New Zealand 封 quot quot 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光The crystal 4 can be electrically connected to the upper j by the above wiring; the above lower LED flip chip can be electrically connected to the lower earth plate by the above wiring. The emitted light source can be a complementary wire, such as M light and yellow light, respectively. Furthermore, the translucent filling and the light-transmissive protective layer can be formed into a body and become a cover of the combined light-emitting diode structure. The solution is further advanced to the object, structure, features, and functions of the present invention. The above description of the present invention is also to be understood as a way of exemplifying and explaining the principles of the present invention, and the patent application of the present invention is further explained. The detailed features and advantages of the present invention are described in detail below, and are sufficient to enable any skilled artisan to understand the technical contents of the present invention and to present the contents of the present application, the scope of the patent application, and The related objects and advantages of the present invention can be readily understood by those skilled in the art. [Embodiment] Referring to Figures 2 and 2, respectively, a preferred embodiment of the composite light-emitting diode package structure before and after the assembly is constructed. The composite light-emitting diode package structure of the present invention comprises two light-emitting diode packages, namely, an upper light-emitting diode package structure 2, which is a lower light-emitting diode. Structure 4. The light-emitting diode of the lower light-emitting diode package structure 4 (4) is directed to the upper and second diode-encapsulated light-emitting diodes and the functions of the respective components will be described in detail below. The upper LED package structure 2 includes an upper substrate L having a hollow structure 3, and the light-emitting diode wafer 5 is located on the hollow structure 3 and is coated and fixed on the towel forming surface 7 by the light-transmissive filler. . The cover body 7 is composed of a light-transmitting material, so that the upper light-emitting layer can be illuminated up and down. The upper substrate may be a metal substrate or a non-metal substrate, and the substrate includes a pad or an electrical pattern for electrically connecting the Mx photo-electrode wafer 5. The pads 或 or the electrical patterns are not connected to each other in an insulated state; the wires 9 may be coated by a conductive paste (not shown) to face the pads n and the LEDs 5. In order to facilitate soldering and not fall off, conductive adhesives are generally made of gold, silver, tin, chrome, nickel or alloys thereof. (IV), because the goldsmith is more expensive, and the reflection effect of yellow light is poor, it is rarely used. The upper LED wafer 5 can be any conventional or commercially available wafer of various colors, but needs to be an upper and lower illuminable wafer or a transparent wafer to provide a 1278131 光源 light source in the up and down direction. The lower LED package structure 4 has a lower substrate 13; the lower LED substrate 15 is located on the substrate 13. The lower substrate 13 may be a metal substrate or a non-metal substrate. The substrate 13 may include a pad or an electrical pattern for electrically connecting the LEDs 15 . Each of the pads 19 or the electrical patterns are not connected to each other in an insulated state; if the pads 19 are provided, the wires 17 can be coated with a conductive paste (not shown) to couple the connection pads 19 and emit light. Diode wafer 15. In order to be easy to solder and not to be used, the conductive paste is generally made of gold, silver, tin, chrome 'nickel or its alloy as a conductive material. Since the gold material is less reflective than the lighter color, it is less used. The lower illuminating two crystals >} 15, can be any conventional or commercially available wafer of various colors. The cover body 7 is composed of a light-transmitting material, and can be formed by covering the upper LED chip 5 and the wiring 9 in the hollow structure 3 by using a filling material, and the technology utilized includes: low-pressure molding modling technology. Or encapsulated technology to complete the protective function of the cover 7. In addition, the lower LED package structure 2 and the upper LED package structure 4 are respectively assembled to cover, for example, a light-transmissive protective layer 21 to complete the protection function of the LED wafer. The light-transmissive protective layer 21 is also composed of a light-transmitting material, and the bonding process of the upper and lower light-emitting diode package structures is described by using a low-lying ring. 1278131 m _ each of the upper and lower illuminating diode packages 2, 4, and then the lower illuminating body. The structure 4 is aligned with the contact of the upper LED structure 2, and then the bonding of the upper transparent layer//, the soil plate 13 or the bonding of the transparent protective layer 21 to the cover by the adhesive 6 is completed. The light-emitting diode package structure of the above-mentioned light-emitting diode package structure can also be an SMD configuration, "the medium wafer can be directly connected with the pad or circuit pattern 19" The connection is made, and only the other uses - the connection π is connected to the other side, and the thus formed composite light-emitting diode package structure is as shown in Fig. 3. Aspect 'as shown in Fig. 4, After the invention of the composite light-emitting structure, the _.U Chen Zhongji configuration Μ ^ After the lower light-emitting diode 4 is aligned with the hollow portion 3 of the light-emitting diode structure 2, the 'refill light-filling filler material in the empty structure 3 cap The upper and lower light emitting diode chips 5, 15 and their wirings 9, 17 are formed by integrally forming the cover body 7 and combining the upper and lower two sides to complete the fabrication of the composite light emitting diode package structure of the present invention. The joints of 1,13 can pass through the respective joints 塾, ΐ9. Similarly, as shown in Fig. 5, Fig. 4 The lower light-emitting diode structure in the composite light-emitting diode structure shown may also be of a dynamic configuration, having only one wire, and providing an electrical connection by direct contact with the money channel. The circuit design of the upper and lower LED package structure can be determined according to requirements. For example, the upper and lower LED package structures 2, 4 can be designed in parallel or in series. In addition, the upper and lower light-emitting diode package structures 2, 4 can be combined with the light-emitting mode 10 1278131 i light effect, and can also be designed to have different colors. The above circuit design is known and is not the focus of the present invention, so it will not be described here. The top view of the preferred embodiment of the present invention is used to show the 曰Hr empty portion, and the upper and lower corresponding light-emitting diodes are produced by the rabbit's money. The launch is a single illuminating structure. The cover body 7 shown in the drawings is circular and can also be used in any shape to achieve the present invention and is not intended to limit the scope of the present invention. According to the above, _, 树 赖 二 二 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾The structure of the county is matched with the L-jin, the wave-emitting diode structure emits blue light, the upper light is two, the light is on, the upper light-emitting diode is packaged: two = = body time; the lower light-emitting diode package structure (four) light body When the package is turned red, the yellow light can be emitted through the cover. Not for the hunting of the Tt road, the composite light-emitting diode package β-structured light effect, or can be separately transmitted through the cover body, the light body package structure or the lower light-emitting diode package structure. Through the above, the present invention only needs to use the upper and lower two-emitting diode chips to mix 1278131 white light, without the need to know the fading of the fading, and does not need to go to the three-electrode wafers. Talk about the effect of low manufacturing costs. Also by circuit » again. Ten-and-a-half luminescence—The polar body wafers can be illuminated at the same time or separately, adding more flexibility. Further, by the present invention, a preferred illuminating effect can be obtained by selecting a suitable upper and lower illuminating light source according to the light source of the present invention. Although the present invention has been described above with reference to the above, it is intended to limit the present invention. The modifications and refinements of the present invention are all within the scope of the invention, and the scope of the patent application of the present invention is defined by the scope of the invention as defined in the present invention. The first example of the fascination of the illuminating two-storey structure; the second picture of the faculty is the bribe-lighting two-ply-turning--the preferred silver example; Another embodiment after the assembly of the polar body package structure; Fig. 4 of Fig. 1 is a re-implementation example of the structure of the gambling light emitting diode block; Fig. 5 is the composite light of Fig. 4 A preferred embodiment of the diode package structure; the early 6 is a better view of the present invention in Fig. 2. 12 1278131 [Description of main components] 1 Upper substrate 2 upper LED package Structure 3 hollow structure 4 under the light dipole Body package structure 5 Upper LED chip 6 Adhesive 7 Cover 9 Wiring 11 Pad 13 Lower substrate 15 Lower LED wafer 17 Wiring 19 Pad 21 Light-transmissive protective layer 13

Claims (1)

1278131 十、申請專利範圍: 1. 一種複合發光二極體封裝結構,包含: —上發光二極體封裝結構,包含·· 具有一鏤空結構之-上基板;及 -上發光二極體透明;,錄該鏤空結 一透光填充物上下包覆固定於其中;及 、如 -下發光二歸封裝結構,_上發光二 體封裝,包含:褒結構一 一下基板;及 下發光二極體晶片,位於續下其士 磕Mm T絲上,賴襞於該 鏤工、,、σ構中,具有一透光保護層。 2.如申請專纖圍第丨項所述之複合發光二極體封裝結構,其中 之 该上發光二鋪透明晶片與該下發光二極體翻晶片發出、 色光為互補光源。 # 3.如申請專利範圍第!項所述之複合發光二極體封裝結構,其中 該上發光二極體透明晶片與該下發光二極體透明晶片發出之 色光混出互補白光。 & 4. 如申請專利範圍第i項所述之複合發光4體封裝結構,盆中 該下發光二極體龍結構補由該透光保護層與該透光填充 物之黏結而結合。 5. 如申請專利範圍第1項所述之複合發光二極體封裝結構,其中 該下發光二極體封襞結構係藉由該下基板與該上基板之黏結 14 •1278131 而結合。 6·如申請專利範圍第 _ m 發光二極,it "上毛先一極體透明晶片係藉一接線電性連接於、 7·如申請專繼_1項所狀複合發光二極體^職,其中 该下發光二極體透明晶片係藉-接線電性連接於該下基板。 8·如申鱗利細第1撕述之複合發光二極體封裝結構,其中 該透光填充物與該透光保護層係可一體形成。1278131 X. Patent application scope: 1. A composite light-emitting diode package structure, comprising: an upper light-emitting diode package structure, comprising: an upper substrate having a hollow structure; and an upper light-emitting diode transparent; Recording the hollowed-out junction, a light-transmissive filler is fixed and fixed thereon; and, for example, a lower-emitting two-package structure, the upper-emitting two-body package includes: a germanium structure and a lower substrate; and a lower light emitting diode The wafer is located on the Ms. Tm wire of the Shih-Yi, and has a light-transmissive protective layer in the structure of the work, the σ structure. 2. The composite light emitting diode package structure as claimed in claim 3, wherein the upper light emitting two-layer transparent wafer and the lower light emitting diode are turned over, and the color light is a complementary light source. # 3. If you apply for a patent range! The composite light emitting diode package structure of the present invention, wherein the upper light emitting diode transparent wafer and the color light emitted by the lower light emitting diode transparent chip are mixed with complementary white light. & 4. The composite light-emitting 4-body package structure according to the invention of claim i, wherein the lower light-emitting diode structure is combined with the light-transmitting protective layer and the light-transmissive filler. 5. The composite light emitting diode package structure of claim 1, wherein the lower light emitting diode package structure is bonded by bonding the lower substrate to the upper substrate 14 • 1278131. 6·If the patent application scope _ m illuminating dipole, it " 上毛一一极体透明片 is electrically connected by a wiring, 7·If applying for the special _1 item composite light-emitting diode ^ The lower LED transparent chip is electrically connected to the lower substrate by a wiring. 8. The composite light emitting diode package structure as claimed in claim 1, wherein the light transmissive filler and the light transmissive protective layer are integrally formed. 1515
TW94118495A 2005-06-03 2005-06-03 Package structure for compound light emitting diode TWI278131B (en)

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TWI278131B true TWI278131B (en) 2007-04-01

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