TW200826446A - Two-phase charge pump circuit capable of avoiding body effect - Google Patents

Two-phase charge pump circuit capable of avoiding body effect Download PDF

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Publication number
TW200826446A
TW200826446A TW095145928A TW95145928A TW200826446A TW 200826446 A TW200826446 A TW 200826446A TW 095145928 A TW095145928 A TW 095145928A TW 95145928 A TW95145928 A TW 95145928A TW 200826446 A TW200826446 A TW 200826446A
Authority
TW
Taiwan
Prior art keywords
switch
transistor
control node
node
terminal
Prior art date
Application number
TW095145928A
Other languages
English (en)
Chinese (zh)
Other versions
TWI339477B (enExample
Inventor
Wu-Chang Chang
Yin-Chang Chen
Original Assignee
Ememory Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ememory Technology Inc filed Critical Ememory Technology Inc
Priority to TW095145928A priority Critical patent/TW200826446A/zh
Priority to US11/730,955 priority patent/US20080246536A1/en
Publication of TW200826446A publication Critical patent/TW200826446A/zh
Priority to US12/222,811 priority patent/US7576593B2/en
Application granted granted Critical
Publication of TWI339477B publication Critical patent/TWI339477B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW095145928A 2006-12-08 2006-12-08 Two-phase charge pump circuit capable of avoiding body effect TW200826446A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095145928A TW200826446A (en) 2006-12-08 2006-12-08 Two-phase charge pump circuit capable of avoiding body effect
US11/730,955 US20080246536A1 (en) 2006-12-08 2007-04-05 Two-phase charge pump circuit without body effect
US12/222,811 US7576593B2 (en) 2006-12-08 2008-08-18 Two-phase charge pump circuit without body effect

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW095145928A TW200826446A (en) 2006-12-08 2006-12-08 Two-phase charge pump circuit capable of avoiding body effect
US11/730,955 US20080246536A1 (en) 2006-12-08 2007-04-05 Two-phase charge pump circuit without body effect

Publications (2)

Publication Number Publication Date
TW200826446A true TW200826446A (en) 2008-06-16
TWI339477B TWI339477B (enExample) 2011-03-21

Family

ID=50731857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145928A TW200826446A (en) 2006-12-08 2006-12-08 Two-phase charge pump circuit capable of avoiding body effect

Country Status (2)

Country Link
US (2) US20080246536A1 (enExample)
TW (1) TW200826446A (enExample)

Cited By (1)

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TWI792132B (zh) * 2019-12-30 2023-02-11 大陸商華為技術有限公司 充電保護電路、充電電路以及電子設備

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US20100283533A1 (en) * 2009-05-05 2010-11-11 Numonyx Bv Charge pump circuit and method
ATE533231T1 (de) * 2009-09-03 2011-11-15 Austriamicrosystems Ag Koppelkreis, treiberschaltung und verfahren zur steuerung eines koppelkreises
US11611276B2 (en) * 2014-12-04 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuit
TWI606448B (zh) 2015-07-29 2017-11-21 國立交通大學 介電質熔絲型記憶電路及其操作方法
CN107070205B (zh) * 2017-05-10 2019-09-20 湘潭大学 一种新电荷泵电路
TWI711258B (zh) * 2017-09-12 2020-11-21 力智電子股份有限公司 電源切換電路與電源切換控制器的積體電路
US11056197B2 (en) 2018-11-08 2021-07-06 Samsung Electronics Co., Ltd. Charge pump and memory device including the same
KR102704906B1 (ko) 2018-11-08 2024-09-09 삼성전자주식회사 차지 펌프 및 차지 펌프를 포함하는 메모리 장치
DE112021002811T5 (de) * 2020-05-18 2023-03-02 Microchip Technology Incorporated Ladungspumpenzelle mit verbesserter latch-up-immuniität und ladungspumpen, die diese einschliessen, sowie verwandte systeme, verfahren und vorrichtungen
CN114362515B (zh) * 2022-01-17 2025-08-19 深圳劲芯微电子有限公司 一种多相位电荷泵的驱动电路改进方法及改进结构

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DE19953882C2 (de) * 1999-11-09 2001-10-18 Infineon Technologies Ag Ladungspumpe zum Erzeugen von hohen Spannungen für Halbleiterschaltungen
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TW564434B (en) * 2002-02-22 2003-12-01 Ememory Technology Inc Charge pump circuit without body effects
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI792132B (zh) * 2019-12-30 2023-02-11 大陸商華為技術有限公司 充電保護電路、充電電路以及電子設備
US12002801B2 (en) 2019-12-30 2024-06-04 Huawei Technologies Co., Ltd. Charging protection circuit, charging circuit, and electronic device
US12446326B2 (en) 2019-12-30 2025-10-14 Huawei Technologies Co., Ltd. Charging protection circuit, charging circuit, and electronic device

Also Published As

Publication number Publication date
US7576593B2 (en) 2009-08-18
TWI339477B (enExample) 2011-03-21
US20080246536A1 (en) 2008-10-09
US20080309399A1 (en) 2008-12-18

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