TW200815301A - A method and equipment for anodic bonding - Google Patents

A method and equipment for anodic bonding Download PDF

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Publication number
TW200815301A
TW200815301A TW95136473A TW95136473A TW200815301A TW 200815301 A TW200815301 A TW 200815301A TW 95136473 A TW95136473 A TW 95136473A TW 95136473 A TW95136473 A TW 95136473A TW 200815301 A TW200815301 A TW 200815301A
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Taiwan
Prior art keywords
electrode
bonding method
substrate
glass plate
lower electrode
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TW95136473A
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Chinese (zh)
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TWI308135B (en
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Chii-Rong Yang
Jim-Wei Wu
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Chii-Rong Yang
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Publication of TWI308135B publication Critical patent/TWI308135B/en

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Abstract

A method for anodic bonding is provided. The method includes the following steps. Step one is providing a silicon plate. Step two is providing a glass plate on the silicon plate. And the step three is providing an upper electrode and a lower electrode. The upper electrode is suspended above the glass plate at a predetermined distance for providing current to the glass plate by arc discharge and the silicon plate is placed on the lower electrode.

Description

200815301 九、發明說明: 【發明所屬之技術領域】 尤指運用於石夕基 本發明係與陽極接合有關 板與玻璃板的陽極接合技術。 【先前技術】 陽^接合技術多應用於將矽基板破璃板 合。這如i / -),有時並輔以加熱,使兩者結 改良多在广‘ 2叉二有年’但是對於這個技術的 的生產,以量制價、…更大規模 处、、装^斤以習用的在上電極上作變化的技術已經不 5方戈產業的,求,因為上電極的數量盘排 出限在於砍基板與玻璃板之間的空/氣Ξ 在本!Ϊ出電列組合受到限制,故 …直沒有找到妥善並具備革命 【發明内容】 明則將上有電1予二巧二的人成的本=發 空,佶卜恭扭:π ▲丄 ι々、侍接合的材料上 故本發明可以大幅的提高接iSi材以;效 200815301 率0 為達到上述之目的,本發明提供一種陽極接 合方法,包含下列步驟:(1)提供一矽基板;(2) 提供一玻璃板,置放於該砍基板上;以及(3)提供 一上電極與一下電極,其中該上電極以一預設距 離懸空於該玻璃板上,藉電弧為該玻璃板供應電 流’而該矽基板即置放於該下電極上。 如前所述的接合方法,其中該預設距離的範 圍是在一百至兩千微米之間。200815301 IX. Description of the invention: [Technical field to which the invention pertains] In particular, the invention relates to the anodic bonding technique of a plate and a glass plate related to anodic bonding. [Prior Art] The y-joining technique is mostly applied to the ruthenium substrate. This is like i / -), sometimes supplemented by heating, so that the two knots are improved in the wide 'two forks and two years' but for the production of this technology, to the price, ... larger scale, The technique of changing the upper electrode on the conventional one has not been 5 squares of the industry, seeking, because the number of upper electrode discharge limit is to cut the gap between the substrate and the glass plate / air Ξ in this! The combination of the electric and electric power grids is limited, so... it is not found properly and has a revolution. [Inventive content] If there is a person who has a power of 1 to 2, it will be empty, and 佶 恭 恭 : : Therefore, the present invention can greatly improve the connection of the iSi material; the effect of 200815301 rate 0 to achieve the above purpose, the present invention provides an anodic bonding method comprising the following steps: (1) providing a substrate; (2) Providing a glass plate disposed on the chopping substrate; and (3) providing an upper electrode and a lower electrode, wherein the upper electrode is suspended on the glass plate at a predetermined distance, and an electric current is supplied to the glass plate by an electric arc 'The ruthenium substrate is placed on the lower electrode. The bonding method as described above, wherein the predetermined distance ranges from one hundred to two thousand micrometers.

如前所述的接合方法,其中更包含一步驟 (4):使該玻璃板與該上電極相對轉動。 如前所述的接合方法,其中更包含一步驟 (2-1):加熱該石夕基板。 如前所述的接合方法,其中該步驟(2_υ所述 的加熱,,係透過一加熱器加熱該下電極來加熱。 如前所述的接合方法’其中該下電極的表面 以選自銀、無氧銅、以及金為材料並透過選自 鍍與蒸鍍的方式形成於該下電極的表面上。 ,如前所述的接合方法,其中該上電極的圖形 係王放射狀或渴線狀’而所述放射狀或渦線狀 可以透過長條形凸塊直接成型或以點狀凸塊排列 洛〇 其中該上電極的渦線 如前所述的接合方法 係阿基米德渦線。 種陽極接 一上電極 一材料之 為達上述之目的,本發明提供另一 合方法,其特徵在於,以一預設距離將 與一第一材料隔開,使該上電極與該第 間產生電弧放電。 如上所述的接合方法,其中該上電極與該第 200815301 一材C對的旋轉運動。 接合。 弟—材料透過陽極接合方法 為達上述之目的,本發裎 f設傷,包含一加熱器;一— f陽極接合 熱器的上空,· 一下電極,抑^二極’懸置於該加 J一電源,電連接於該上器上;以 料,而該上電極與該第一材隔2二與第二材 η者,其中該特定距離t圍々J距離。 兩千微米之間。 乾圍疋在一百至 銀、無氧銅 較佳者 與蒸鍍中的 較佳者 較佳者 較隹者,其中該下電極並报 以及金的成有-材料選自 益t該表面層的形成係以選自濺鍍 ίί;!ΐ=連接於該表面層。 第-材料的表平面的法線平#具有-轉軸’與該 較^[土者’其中該電極上更右 而排列成選自渦線與直線中數個端點, 極技i了達到上述的目的,本發明還提供一種陽 ,供-玻璃板,置放於L夕 極’該矽基板即置放於該下電極上;以灰、 一上電極完全覆蓋該玻璃板上,其中該上電 極係以氧化銦錫為材料。 r巧上電 自^ϋ:該氧化銦錫的形成方式係以選 ,賤鍍與蒸鍍中的一種。 ^ 200815301 較佳者’是在真空環境下進行接合 【實施方式】 請參見圖1,為本發明陽極接合技術盘借 的示意圖。其中揭示了 一待接合材料1,/包if 第一材料la與一第二材料lb,通常第一材 J二玻璃板而第二材料jb是一石夕基板。而H待 接a材料1則是放置在下電極3b上,而τ命 至罟机一, 上而下電極 ;一加…心2上,因此熱可以透過下電極 3 b傳遞到發基板1 b上。透讲士勒办贫 陽極接合可以更右兮品Ϊ1熱夕基板115使得 苟往接口了以更有效。而本發明的上 一預設距離D懸置玻璃板la τ 2 =以 离"介於-百微米到兩千微米之間通 …數值不是很大,因此第一‘料由 ,h〇Ver)放電的現象,所以ϋ = 跳^ 陽極接合仍然有效,因此上電極、、、尤^电那麼 ί,觸而受到位置的限制而;以自 2移動,由於陽極接合的效應 二自 果配合著陽極接合的擴6電面。接合, 動〒就可以加快整個陽極接合製^同知移 凊參閱圖2,為本發明陽搞姑^壬 的操作示意圖。其中,待接人^ ^ δ技術與設備 板ϋ一矽美柘a f Ϊ材料1包含一玻螭 極3七則位於加熱器2上,而i 3b上,而下電 懸置一放電裝置3a,,即作為上<電合材料1上則 璃板u接觸。又,放電穿H之用且不與破 文包衣置3a包含一轉軸3〇 200815301 f 了電極部31,轉軸30係連接於一轉動 中未揭示)使上電極部3i旋轉,而卜iff械(圖 是涵蓋了整個第一材料la的表面上,若整。^31 ^ 的端點310, J _ if】纟列或形狀的作為電極 =” i a m要透過轉轴3 〇使 ^ 的表面上空掃過一定區以;極2-材料h 幅縮短陽極接合的時間:链可以大 個橫跨上電極部31直柄,如果電極是一 30須旋轉—百八十度,工若線狀^狀電^^麼轉軸 從上電極部31中心向四周延伸$,那m射n I以旋轉較少的角度即可使整 ^ 表面均被電極掃過P 弟材枓la的 I中4;,3 ?-1 : ΐ本發明實施例的侧視圖。 h,,通常在陽1接乂由而其負極連接到放電裝置 本合理下中’為了讓下電極3b的成 能較差,因此為了讓電流可以 盘第反a’本發明更揭露在下電極% 過ΐ -上可用金、銀或無氧銅為材料並透 ϊΐϊ”?的方式形成。而直流電源4的陽極 Ct導體層3b〇電連接,而*二材料ib ^ , ^ ηπ .、。之在同樣的輸出電力時,透The joining method as described above further comprises a step (4) of rotating the glass sheet relative to the upper electrode. The bonding method as described above further comprises a step (2-1) of heating the substrate. a bonding method as described above, wherein the step (2_υ heating, heating the lower electrode by a heater to heat the bonding method as described above) wherein the surface of the lower electrode is selected from the group consisting of silver, The oxygen-free copper and the gold are formed on the surface of the lower electrode by a method selected from the group consisting of plating and evaporation. The bonding method as described above, wherein the pattern of the upper electrode is radial or thirsty. The radial or vortex shape may be directly formed by the elongated bumps or arranged in a dot-like bump. The vortex of the upper electrode is as described above, and the joining method is an Archimedes vortex. The anode is connected to the upper electrode and the material is for the above purpose, and the present invention provides another method, characterized in that a predetermined distance is used to separate from a first material, so that the upper electrode and the first portion are generated. Arcing. The bonding method as described above, wherein the upper electrode is rotated with the pair C of the first layer of the first layer of the first layer of the first layer of the first layer of the first layer of the first layer of the first layer of the material of Heater — f. The anode is connected to the upper surface of the heater, and the lower electrode is suspended from the power supply, and is electrically connected to the upper device; the material is separated from the first material by the second material. And the second material η, wherein the specific distance t is 々J distance. Between two thousand micrometers. The dry dam is preferably better in one hundred to silver, oxygen-free copper and the best in evaporation. The latter, wherein the lower electrode is reported and the gold is formed - the material is selected from the surface layer formed by sputtering ΐ ΐ 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接The line flat #有-轴轴' and the comparison [the earther' in which the electrode is arranged to be rightward is arranged to be selected from a plurality of end points in the vortex line and the straight line, and the present invention achieves the above object, and the present invention also provides a Yang, a glass plate, placed on the L-pole, the substrate is placed on the lower electrode; the glass plate is completely covered with ash and an upper electrode, wherein the upper electrode is made of indium tin oxide.巧巧电电自ϋ: The formation method of the indium tin oxide is selected, one of ruthenium plating and evaporation. ^ 200815301 The better one is in Engagement in a vacuum environment [Embodiment] Referring to Figure 1, there is shown a schematic diagram of an anodic bonding technique of the present invention, in which a material to be joined 1, / if if a first material la and a second material lb, usually One J two glass plate and the second material jb is a stone substrate, while the H material to be connected is placed on the lower electrode 3b, and the τ is applied to the first machine, the upper and lower electrodes; Therefore, heat can be transmitted to the hair substrate 1 b through the lower electrode 3 b. Through the lecturer, the lean anode connection can be more effective, and the substrate 115 is made more effective. However, the previous one of the present invention is more effective. The preset distance D suspends the glass plate la τ 2 = from "between - 100 micrometers to two thousand micrometers. The value is not very large, so the first 'material, h〇Ver) discharge phenomenon, so ϋ = 跳 ^ anodic bonding is still effective, so the upper electrode, and especially the electric 那么, the contact is limited by the position; to move from 2, due to the effect of anodic bonding, the anodic bonding surface. The jointing and moving can speed up the whole anodic bonding system and the same movement. Referring to Fig. 2, the operation diagram of the present invention is shown. Among them, the person to be connected ^ ^ δ technology and equipment board ϋ 矽 柘 柘 柘 柘 Ϊ material 1 contains a glass 螭 3 七 七 位于 位于 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器 加热器That is, as the upper <electro-composite material 1, the glass plate u is in contact. Moreover, the discharge is used for H and does not include the rotating shaft 3a including a rotating shaft 3〇200815301 f the electrode portion 31, the rotating shaft 30 is connected to a rotation and is not disclosed) to rotate the upper electrode portion 3i, and the (The figure covers the entire surface of the first material la, if the end point of the ^31 ^, 310, J _ if] 纟 column or shape as the electrode = " iam to pass through the axis 3 〇 to make the surface of ^ Sweep through a certain area; pole 2 - material h width shortens the time of anodic bonding: the chain can be large across the upper electrode portion 31 straight shank, if the electrode is a 30 must be rotated - one hundred and eighty degrees, if the line is like The motor shaft extends from the center of the upper electrode portion 31 to the periphery, and the atomic n I can be rotated by a small angle so that the entire surface is swept by the electrode of the P material 枓la; 4; ?-1 : A side view of an embodiment of the present invention. h, usually in the anode 1 and the cathode is connected to the discharge device, in order to make the lower electrode 3b poor, so in order to allow current The invention is further disclosed in the present invention. The method of using gold, silver or oxygen-free copper as a material and passing through the lower electrode is disclosed. Into. 3b〇 the electrically conductive layer Ct anode DC power source 4 is connected, while the second material * ib ^, ^ ηπ.,. The output power at the same time, through

Jif 2在下電極31?表面的良導體層3b0,可以 獲侍更咼的陽極接合效率。 請參閱圖3-2 ,為本發明另一實施例的侧視 200815301 揭;;ΐ在第-材料1a即玻璃板的表 3c,並4氧化銦鍚(IT〇)層 好處暑i认# π Ϊ 於整個玻璃板上,這樣的 得立即的供带if的整個接觸面都可以獲 =;;;;Ϊ Η接觸亦無不可,但在大氣環 接合/ϋΐΐΐΐ供驅趕氣泡的結構設計,故 m:降低。不過若在真空環境下,ί 與梦基板=之間將被抽$,則其間就不 :盥在真空環境中’平面電 大的電@1存有極小的空隙將導致極 ϊ以二:t發=:?化r璃 以'玻化璃二 者錫心 ;J ^ J ^ „ l a ^ ^ΦΓ/Λ 4 ㈡:i陽極接合的效率當然會提高。此外使 同,因此不必振心因為陽極接合作 ^ ^= η二銦錫層3C與玻璃板la剝離、匕_2 =π下電極3b亦置放於—加熱器2上’ if下雷 f 3b上一形成有一良導體層 下+榀 板'依—序如置!以匕 又,…的、陽極♦電面連上 200815301 ,二的陰極則是電連接於氧化銦錫層3c。又,為 ^確,矽^板1b與玻璃板la之間沒有空氣存 i技乳化銦錫層3<作為上電極的實施例中, Ξίί :取好在真空狀態下實施,以確保高良率 命枚ί麥閱圖冬1 ’為本發明呈放射狀排列之上 二t的綠製方法示意圖。其中放射狀排列的電極 L ^以一圓心為起點向外延伸而去,因此自圓心 片诚!!某一特定點的連線,就是電極排列時所要 rl·岡/放f狀線條,也是上電極的半徑。如以在 iϊί八等分而言,那各個圓周上的相鄰的周分 出所角度即是以三百六十度除以八,故可得 相距角度為四十五度,因此首先是步驟 為丰一圓心0與一周分點Γ,,將兩者連線 ίίΐΐ 〇1”\接著是步驟(2):以圓心〇為圓心, 線線〇1’’為半徑晝圓;步驟(3):以相距半徑 並c $四十五度的角度,自圓心〇出發到達圓周 到ΐ句*周分點2”,連接周分點2,,與圓心0而得 -半ί ί =4):以步驟(3)的方式,晝出 声· 03 ’而其距離半徑線〇2,,亦為四十五 步驟(5):以步驟(3)與步驟(4)的方式 ί 出半徑線 04,,、05,,、。6,,、07,,與別,,, 依據的:侍到八等分的放射狀電極於排列時所須 條、。、請繼續參閱圖心1,其右邊所示者 而二 2 Ϊ 上述半徑線 〇4”、05,,、06,,、07,,與 08,, 點310,就是以放射狀排列的端點電極。 圖。】f閱圖4-/2 ’為本發明的電極實施例示意 對第二从,心2係從上電極部3 1 a的底面,即面 料la的那一面所繪,而放射狀電極3 l al 11 200815301 射狀1電極部31a的中心向四厨延伸, 方所附的剖面可知電極31al的形 較 根部較寬。^乂乍而 立又如圖4-2所示,放射狀電極31&1將上雷 之-圈即 生接人=計1a直接接叉到放電的影響產 妓ί二ί域,不需要如習用技術一樣等待陽極 =5,域^漸擴散。本發明藉由轉動放電裝置 的方式,達到移動放電區域的結果,使得 主動的隨著放射狀電極的 g朽2 ί透過本發明使電極轉動的效果,可以ί %板接合的作業事半功倍。 』以使 例干ί Π5 ’為本發明的上電極部另-實施 31bl # ® ;ΐ ! ^ 1 31b ^ ^ ^ ^ ^ ^ t ^ 外旋轉ΐ ί ί 3 ί電ί部3 1 b的中心逐漸向 ί ϊ ί1門渦係依據阿基来德渦線緣製。 米# g線给二f ® 6,為本發明上電極部的阿基 =步::;n;)m6左側,而繪 八望^〜=步驟(1) ·先將一個圓的圓周分為 6,, Ϊ、,i于 Ϊ,八個周分點為 1 ”、2”、3”、4”、5,二 本^ 8 ,再將各周分點與圓心〇分別連出 ,線〇1”至08”;步驟(2):將任一半 刀,於圖6中係選擇〇8,,,則半徑線j 到七個半徑分點丨,、2, V 上則付 12 200815301 弧,交半徑線CH”於定點 牛 4 、 為圓心而以〇2’為丰取^ ^一 ’以圓心0 >2^ 得到定點f、以及ΐΐ!巧 後是步驟⑹,以曲H、·0:之付到疋點g;最 定點a與定點b、定連4 ,定點a、 d、定點d與定點1,上f疋f :、*點C與定點 定點g、以及定點g鱼周合 ,,。L f .、、、占*與 渦線V1。、周刀點8如此即可得到 沾Μ ΐ Ϊ續參閱圖6,以阿基米德渦線安排電極 =學,式緣製,因此當…;匕 ϋ ^線的形狀時,只要將所需等分圓的份數繪 iff入電腦數值控制加工機就可以輕易的製造 4二#阿基米德渦線的電極,由此可見以阿基米 ^ ”、、、所排列而成的電極是十分容易設 的0 ♦制ί參閱圖7,為本發明另一以阿基米德渦線 、、二衣/所没計的渦線。其中係將一圓分為十二等 ^ ^所以可以很明顯的知道,只要圓的等分數量 惠夕那麼阿基米德涡線的就愈長、愈緊密,如 圖^所示的渴線V 2,而圖5所示的渦線電極3 1 b 1 即是依照圖7的渦線V2加以製造。由於阿基米 德f線可以圖學的方式簡單繪出,因此只要將所 欲ί分的份數十二份繪製後輸入電腦數值控制加 工機’即可在一用以製造上電極部3 1 b的母材上 加工出如渦線V2般成突出狀的渦線電極3 lb 1。 13 200815301 带搞=^述,透過將電極懸空於玻璃板上,使 :二ιΐ接接觸玻璃板而進行陽極接合,使得带 二考刮傷玻璃板之虞而可以在玻璃板上 L ϊ ί位ΐΐ關係通常將此懸空設置的電:稱 極’因為它位於玻璃板的上方。又因 ^ 5 f合的區域不僅僅是靠著本身的擴散而 於上f極的移動而移動,所以陽極接 渦線狀或是放射狀分佈的電極,透過本 電極在玻璃板上轉動,將使陽極接 庠所干 間可以縮到更短,再者,呈Γ射時 =的電極,可以由線狀電極連線而成疋^是】= 極依據所得到的放射狀線條或是渴線 ^ 此外,本發明亦揭露了在玻璃板的上表面形成一 虱化銦錫(ITO)層藉以使得整個玻璃板的上 t身就是一個上電極,因此可以讓個矽基板^ 璃板的整個接觸面在通電時成為陽極接了 外亦可整合封裝製程。又本發明還揭露了在下i 極置有梦基板的表面上形成一以高導斜二 金、銀或無氧銅等製成的良導體層, 源 電可以更無阻礙的傳遞到石夕基板上。=1二 明逛揭露得j阿基米德渦線來作為排列電極的5 狀依據L使侍在決定電極位置與製造電極上都變 得十分簡單。 夂 本發明遭熟習技術領域之人所任為匠思之修 飾,皆不脫本發明申請專利範圍之保護。少 圖式簡單說明】 圖1’為本發明陽極接合技術與設備的示意 14 200815301 圖; 圖.2 ’為本發明陽極接合技術與設備的操作 … 示意圖; 圖3-1 ’為本發明實施例的侧視圖; 圖3-2,為本發明另一實施例的側視圖; 圖4-1’為本發明呈放射狀排列之上電極的 繪製方法示意圖; 圖4-2 ’為本發明的上電極部實施例示意圖; 圖5,為本發明上電極部另一實施例示意圖; • 圖6,為本發明上電極部的阿基米德渦線繪 製赤意圖;以及 圖7,為本發明另一以阿基米德渦線繪製法 所設計的渴線。 【主要元件符號説明】 1 :待接合材料 1 a ··第一材料、玻璃板 1 b ··第二材料、梦基板 2 :加熱器 • 3a’ :放電裝置 3a ··上電極 3b :下電極 3b0 :良專體層 3c :氧化銦錫層 :轉軸 3 10 :端點 31、31a、31b :電極部 31al :放射狀電極 31bl ··渦線電極 15 200815301 4 :電源 Ο :圓心 1”、2”、3”、4”、5”、6”、7”、8” :周分點 Γ、2’、3’、4’、5,、6,、7,:半徑分點 • a、b、c、d、e、f、g ··定點 01”、0,,2、0,,3、0”4、0,,5、0,,6、0,,7、08, 半徑線 D :預設距離 VI :渦線 應 V2 :渦線 16The good conductor layer 3b0 of Jif 2 on the surface of the lower electrode 31 can provide a more efficient anodic bonding efficiency. Please refer to FIG. 3-2, which is a side view of the invention according to another embodiment of the present invention; FIG. 3 is a table 3c of the first material 1a, that is, a glass plate, and 4 layers of indium lanthanum oxide (IT〇) benefits. ΪOn the entire glass plate, the entire contact surface for the immediate supply of if can be obtained;;;; Ϊ Η contact is also indispensable, but in the atmosphere ring joint / ϋΐΐΐΐ for the structure design of the drive, so m :reduce. However, if in a vacuum environment, ί and the dream substrate = will be drawn between $, then there is no: in the vacuum environment, 'the plane electric power of the electric @1 has a small gap will lead to the extreme two: t Hair =: ?化化R glass to 'glass glass both tin core; J ^ J ^ „ la ^ ^ΦΓ / Λ 4 (two): i the efficiency of the anode bonding will of course increase. Cooperation ^ ^ = η 二 indium tin layer 3C and glass plate la stripping, 匕_2 = π lower electrode 3b is also placed on the heater 2 'if the lower mine f 3b formed a good conductor layer + 榀The board's order is as follows: 匕 ,, ..., the anode ♦ electric surface is connected to 200815301, the second cathode is electrically connected to the indium tin oxide layer 3c. Also, for ^ 矽, 矽 ^ board 1b and glass plate There is no air between the la and the emulsified indium tin layer 3< As an example of the upper electrode, Ξίί: is taken under vacuum to ensure high yields. A schematic diagram of the green method of two t above, wherein the radially arranged electrodes L ^ extend outward from a center of the circle, so since the center of the circle!! The connection of a specific point is the rl·gang/f-line of the electrode arrangement, which is also the radius of the upper electrode. For example, in the case of iϊί octave, the angle of the adjacent circumference on each circumference is Dividing it by three hundred and sixty degrees and dividing it by eight, so the angle of the distance is forty-five degrees, so the first step is to round the center of the heart and the point of the week, and connect the two together ίίΐΐ 〇1”\ Then the steps (2): With the center of the circle as the center, the line 〇1'' is the radius circle; step (3): from the angle of the radius and c $45 degrees, from the center of the circle to the circumference to the haiku * week Point 2", connect the circumference point 2, and the center 0 to get - half ί ί = 4): in the way of step (3), squeak the sound · 03 ' and its distance radius line 〇 2, also Forty-five steps (5): in the way of step (3) and step (4), the radius lines 04, ,, 05,,, 6,,,, 07,, and others, according to: Eight quarters of radial electrodes are required for alignment. Please continue to refer to Figure 1, which is shown on the right and 2 2 Ϊ The above radius lines 〇 4", 05,, 06,, 07, With 08, Point 310, the electrode terminal is arranged radially. Figure. f] Figure 4-/2 'The electrode embodiment of the present invention is shown for the second slave, the core 2 is drawn from the bottom surface of the upper electrode portion 3 1 a, that is, the side of the fabric la, and the radial electrode 3 l Al 11 200815301 The center of the first electrode portion 31a is extended to the fourth kitchen, and the cross section attached to the square shows that the shape of the electrode 31a1 is wider than the root portion. ^ 乂乍 立 and as shown in Figure 4-2, the radial electrode 31 & 1 will be connected to the upper ring - the birth of the person = 1a directly connected to the discharge of the effect of the production 妓 二 ί , , , , The technology waits for the anode = 5, and the domain gradually spreads. The present invention achieves the result of moving the discharge region by rotating the discharge device, so that the effect of rotating the electrode by the present invention with the action of the radial electrode can be achieved with half the effort. To make the example dry Π ' 5 'is the upper electrode part of the invention - implement 31 bl # ® ; ΐ ! ^ 1 31b ^ ^ ^ ^ ^ ^ ^ ^ External rotation ΐ ί ί 3 ί Electricity ί part 3 1 b center Gradually to the ί ϊ ί1 door vortex system according to the Achille vortex line. m# g line to two f ® 6, for the upper electrode part of the invention Aki = step::; n;) m6 left side, and painted eight look ^ ~ = step (1) · first divide the circumference of a circle 6, Ϊ, i, Ϊ, eight weeks points are 1 ”, 2”, 3”, 4”, 5, 2, ^ 8 , and then the points of each week and the center of the heart are connected separately, the line 〇 1" to 08"; Step (2): For any half knife, select 〇8 in Figure 6, then, the radius line j to the seven radius points 丨, 2, V will pay 12 200815301 arc, The radius line CH" is at the fixed point of the cow 4, for the center of the circle and by the 〇2' for the sum ^ ^ a ' with the center 0 > 2 ^ to get the fixed point f, and ΐΐ! After the skill is the step (6), to the song H, · 0 : The payment to the point g; the most fixed point a and fixed point b, fixed 4, fixed point a, d, fixed point d and fixed point 1, upper f疋f:, * point C and fixed point fixed point g, and fixed point g fish circumference , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Therefore, when the shape of the ...; 匕ϋ ^ line, just draw the number of copies of the desired aliquot into the computer The value control processing machine can easily manufacture the electrodes of the 4##阿基米德涡线, and it can be seen that the electrodes arranged in the Aquimi ^", , and the array are very easy to set. 7, another vortex line of Archimedes vortex line, and second clothing/nothing. Among them, a circle is divided into twelve equals ^ ^ so it is obvious that as long as the number of rounds is equal to the eve, then the Archimedes vortex line becomes longer and tighter, as shown in Fig. 2, the vortex electrode 3 1 b 1 shown in Fig. 5 is manufactured in accordance with the vortex line V2 of Fig. 7. Since the Archimedes f line can be simply drawn in a graphical manner, as long as the 12 parts of the desired number are drawn and input into the computer numerical control processing machine, the upper electrode portion 3 1 can be used. The base material of b is formed with a vortex electrode 3 lb 1 which is protruded like a vortex line V2. 13 200815301 With the explanation, by vacating the electrode on the glass plate, the two electrodes are contacted with the glass plate for anodic bonding, so that the second glass can be scratched and the glass plate can be L ϊ ί The ΐΐ relationship usually sets the power of this dangling: it is called 'because it is located above the glass plate. The area where the ^ 5 f is combined is not only moved by the movement of the upper f pole by its own diffusion, so the anode is connected to the vortex or the radially distributed electrode, and the electrode is rotated on the glass plate through the electrode. The anode can be shortened to a shorter length, and the electrode which is in the time of sputtering can be connected by a linear electrode. 是^== According to the obtained radial line or thirsty line In addition, the present invention also discloses that an indium tin oxide (ITO) layer is formed on the upper surface of the glass plate so that the upper body of the entire glass plate is an upper electrode, so that the entire contact of the substrate can be made. The surface can be integrated into the packaging process when it is connected to the anode when it is energized. The invention also discloses that a good conductor layer made of high-conductivity bismuth, silver or oxygen-free copper is formed on the surface of the lower i-layer with the dream substrate, and the source electricity can be transmitted to the Shixi substrate more unimpeded. on. =1 2 The squirting of the j-Aquimide vortex line as the aligning electrode makes the position of the electrode and the manufacturing electrode very simple.夂 The present invention has been modified by those skilled in the art, without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an anodic bonding technique and apparatus of the present invention. FIG. 14 is a diagram of an anodic bonding technique and apparatus of the present invention. FIG. Figure 3-2 is a side view of another embodiment of the present invention; Figure 4-1' is a schematic view showing a method of drawing an electrode on a radially arranged basis; Figure 4-2 'is an FIG. 5 is a schematic view showing another embodiment of the upper electrode portion of the present invention; FIG. 6 is a schematic view showing the Archimedes vortex line of the upper electrode portion of the present invention; and FIG. A thirsty line designed by the Archimedes vortex line drawing method. [Description of main component symbols] 1 : Material to be joined 1 a ··First material, glass plate 1 b ··Second material, Dream substrate 2 : Heater • 3a' : Discharge device 3a ·· Upper electrode 3b : Lower electrode 3b0: good specific body layer 3c: indium tin oxide layer: rotating shaft 3 10 : end points 31, 31a, 31b: electrode portion 31al: radial electrode 31b1 · vortex electrode 15 200815301 4: power supply Ο: center 1", 2" , 3", 4", 5", 6", 7", 8": circumference points 2, 2', 3', 4', 5, 6, 7, 7,: radius points • a, b, c, d, e, f, g · · fixed point 01”, 0, 2, 0, 3, 0” 4, 0, 5, 0, 6, 0, 7, 8, 08, radius line D: Preset distance VI: vortex should be V2: vortex 16

Claims (1)

200815301 十、申請專利範園: 1 · 一種陽極接合方法,包含下列步驟: (1) 提供一&gt;5夕基板; (2) 提供一玻璃板,置放於該矽基板上以 ⑺提供一上電極與一下電極,其中該上電|以 一預設距離懸空於該玻璃板上,藉電弧為該玻璃 板供.應_ %流.’.而該.梦.基板即置放於該下電極上.。 : 項1所接合方法,其中該ί設距^ 的犯圍疋在一百至兩千微米之間。 3·如請求項1所述的接合方法,其中更包含一舟 驟(4):使該玻璃板與該上電極相對轉動。 ν 4.如請求項丨所述的接合方法,其中更包一 + 驟(2-1):加熱該矽基板。 y 項4所述的接合方法,其中該步驟(2-1) =遂的加熱,係透過一加熱器加熱該下電極(來) 熱。 6表面如Λ求自項金ϊ二=電極的 二與蒸銀的方式形成以選 7圖二項射以 狀電極連成。 連、'狀線條或是以點 8.如請求項^所述的接合方法,直上♦ 圖形係呈渦線,並選自連續狀條^也極的 極連成' 灵狀忒條或是以點狀Ί 9.如請求項δ所述的接合方法, $ 渦線係阿基米德渦線。 八中該上%極会 10· 一種陽極接合方法,复拄 _ 距離將一上電極愈一第一 /姑在於,以一預, 私往/、弟材枓蝻開,使該上電 17 200815301 與該第一材料之間產生電孤放電。 π·如〃請求項1〇所述的接合方法,其中該上電極 與該第一材料之間有相對的旋轉運動。 t2·如請求項10所述的接合方法,其中更包含一 第二材料’用以與該第一材料透過陽極接合方法 使兩者接合。 ' 檀%極接合的設備 13. 加熱器 一上電極,懸置於該加熱器的上空;200815301 X. Application for Patent Park: 1 · An anodic bonding method comprising the following steps: (1) providing a substrate; (2) providing a glass plate placed on the substrate to provide an upper layer (7) An electrode and a lower electrode, wherein the power is suspended at a predetermined distance on the glass plate, and the arc is supplied to the glass plate by the _% flow. '. The dream substrate is placed on the lower electrode on.. : The method of joining the item 1, wherein the entanglement of the ί is between one hundred and two thousand microns. 3. The joining method of claim 1, further comprising a step (4) of rotating the glass sheet relative to the upper electrode. ν 4. The bonding method as claimed in claim 1, wherein the substrate is further heated (2-1): the substrate is heated. The bonding method according to item 4, wherein the step (2-1) = heating of the crucible heats the lower electrode through a heater. 6 The surface is pleaded for the self-term gold ϊ 2 = electrode 2 and the method of steaming silver is formed by selecting the 7-element projecting electrode. Connected, 'shaped line or with the joint method described in point 8. as requested in the item ^, straight up ♦ the pattern is a vortex line, and is selected from the continuous strips ^ also extremely connected to the 'spiritual purlins or Dot-like Ί 9. The joining method described in the claim δ, the vortex line Archimedes vortex. Eight of the upper poles will be 10%. An anodic bonding method, 拄 _ distance will be an upper electrode, the first one / aunt, in a pre-, private to /, disciple, so that the power on 17 200815301 An electrical isolation is generated between the first material and the first material. The bonding method of claim 1, wherein the upper electrode and the first material have a relative rotational motion. The bonding method of claim 10, further comprising a second material </ RTI> for bonding the first material to the first material through an anodic bonding method. ' 檀% pole-joined equipment 13. Heater An upper electrode, suspended above the heater; 一:電極,設置於該加熱器上;以及 —二電源,電連接於該上電極與該下電極,1 工^ “下電極上置放有待接合的第一材料盥第 匕料二上電極與該第, 範圍是i ΐ 13所述的设備,其中該特定距離的 犯圍疋在一百至兩千微米之間。 L - = ^ 13所述的設備,其中該下電極並形 以 及… 1 7·如印求項丨5所述的設備, 接於該表面層。 ,、甲忑冤源係電連 I8·把t請求項13所述的設備,复中哕上雷朽士丁 線平行。谷軸,與該弟—材料的表平面的法 19 =,求項13所述的設中目 一種。和‘,f ’而排列成選自渦線與直線中的之 20· —種陽極挺 極在一待接人二方法,/、特徵在於,使一上電 σ材料的平面上轉動。 18 200815301 21·如請求項20所述的接合方法,其中 以一預設距離懸空於該待接合材料上空Y包和 22.如請求項21所述的楱合方法,其铕机 離的範圍在一百至兩千微米之間。八甲該預汉距 23 · —種陽極接合方法,包含下列步驟: (Λ)提供一矽基板; (2) 提供一玻璃板,置放於該矽基板上; (3) 提供一下電極,該矽基板即置放於該下電極 上;以及 * (4) 形成一上電極完全覆篕該玻璃板上,其中該 上電極係以氧化銦錫為材料。 24·如請求項23所述的接合方法,其中該氧化銦 錫的形成方式係以選自濺鍍與蒸鍍中的一種。 2 5 ·如請求項2 3所述的接合方法,是在直空環境 下進行接合。^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 19An electrode disposed on the heater; and a second power source electrically connected to the upper electrode and the lower electrode, wherein the first electrode to be joined is placed on the lower electrode The device of the present invention, wherein the specific distance is between one hundred and two thousand micrometers. L - = ^ 13 the device, wherein the lower electrode is shaped and... 1 7 · The equipment described in Item 5 is connected to the surface layer. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Parallel. The valley axis, with the younger brother - the surface plane of the material 19 =, the item 13 of the item 13 and the ', f ' are arranged in a line selected from the vortex and the line. The anode is a method of being connected to a person, and is characterized in that the bonding method is described in claim 20, wherein the bonding method is suspended at a predetermined distance. Y-package over the material to be joined and 22. The method of twisting as described in claim 21, the range of the machine is in the range of one hundred to two Between the micrometers. The anodic bonding method comprises the following steps: (Λ) providing a substrate; (2) providing a glass plate placed on the substrate; (3) providing a lower electrode, the germanium substrate is placed on the lower electrode; and * (4) an upper electrode is formed to completely cover the glass plate, wherein the upper electrode is made of indium tin oxide. The bonding method, wherein the indium tin oxide is formed in a manner selected from the group consisting of sputtering and evaporation. The bonding method according to claim 23 is performed in a direct space environment. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 19
TW95136473A 2006-09-29 2006-09-29 A method and equipment for anodic bonding TWI308135B (en)

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Publication number Priority date Publication date Assignee Title
TWI460513B (en) * 2011-12-29 2014-11-11 Univ Nat Taiwan Normal Manufacture method for multi layer structure by anodic bonding

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CN103130180B (en) * 2011-12-02 2015-10-28 中国科学院微电子研究所 A kind of wafer scale anode linkage method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460513B (en) * 2011-12-29 2014-11-11 Univ Nat Taiwan Normal Manufacture method for multi layer structure by anodic bonding

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