TWI460513B - Manufacture method for multi layer structure by anodic bonding - Google Patents

Description

Method for manufacturing multilayer anode bonded structure

This case relates to an anodic bonding process, and more particularly to an anodic bonding in which a plurality of glass sheets are laminated.

The anodic bonding is to supply the opposite polarity currents on the two objects to be joined, that is, one is connected to the positive electrode, and the other is connected to the negative electrode. When the voltage is applied, the contact surface of the two objects generates a great electrostatic binding force. Combine the two materials together. In the current state of the art, reference to anodic bonding generally refers to the combination of glass and tantalum material, that is, one is a glass plate and the other is a tantalum substrate, which is bonded together by anodic bonding.

At present, anodic bonding can also be used for bonding between glass plates, usually by adding a conductor or a semiconductor material between the glass plates, thereby applying a voltage to generate an electric field to achieve the effect of anodic bonding. However, since related technologies such as display panels need to join more layers of glass sheets, the conventional technique is to perform anodic bonding in stages, that is, to join two single-piece glass sheets, and then to join them. It is then anodically bonded to another single piece of glass plate, so the efficiency is very low.

For this reason, the applicant invented the "manufacturing method of the multilayer anodic bonding structure" in view of the lack of the prior art to improve the lack of the above-mentioned conventional means.

The object of the present invention is to make the structure of the multi-layer glass plate more quickly, and to provide a conductor or a half between each two glass plates by means of anodic bonding. The conductor layer is energized to allow the two adjacent glass sheets to be tightly joined, which greatly simplifies the manufacture of the multi-layer glass sheet structure, and shortens the anodic bonding operation which has been required to be repeated several times to one time.

In order to achieve the above object, the present invention provides a method for fabricating a multilayer anode bonding structure comprising the steps of providing a DC power source having a positive electrode and a negative electrode; providing a plurality of glass plates; except for one of the glass plates, One end surface of each of the plurality of glass sheets forms a conductor or a semiconductor layer; all of the glass sheets are stacked, and a conductor or a semiconductor layer of one of the glass sheets is contacted with an end surface of the adjacent glass sheet not having a conductive layer. And further stacked into a glass plate stack; and one end surface of the stacked body is electrically connected to the negative electrode, and only a conductor or a semiconductor layer farthest from the negative electrode is electrically connected to the positive electrode.

In order to achieve the above object, the present invention further provides a method for fabricating a multilayer anode bonding structure, comprising the steps of providing a stack having a plurality of glass sheets, each of which has a conductor or a semiconductor between the adjacent glass sheets; And electrically connecting a negative electrode to an end surface of the stacked body, and electrically connecting a positive electrode to the conductor or semiconductor farthest from the negative electrode.

In the following, various embodiments of the "manufacturing method of the multilayer anode bonding structure" of the present invention will be described. Please refer to the accompanying drawings, but the actual configuration and the method adopted do not necessarily completely conform to the described contents, and those skilled in the art should be familiar with the art. Various changes and modifications can be made without departing from the actual spirit and scope of the case.

Please refer to FIG. 1 , which is a schematic diagram of a manufacturing method of the present invention. Glass The plate stack 1 is mainly composed of a plurality of glass plates 10, and any two adjacent glass plates 10 have a conductor or a semiconductor 11 between them, such as aluminum, iron, cobalt, nickel, etc., and semiconductors such as germanium and germanium. Alternatively, it can be seen that before each of the individual glass sheets 10 forms the stacked body 1, a conductor or semiconductor 11 is first formed on one of the two end faces of the respective glass sheets 10, after which the glass sheets 10 are Stacking, it is important to note that when stacking, one of the two glass sheets 10 has a conductor or semiconductor 11 that is in contact with the other end of the other glass sheet 10 that has no conductor or semiconductor 11. After such a stacking, a stack 1 having conductors or semiconductors 11 between the respective glass sheets 10 is formed, after which one end face of the entire stack 1 is electrically connected to the negative electrode 20 of the constant current 2, and The conductor or semiconductor 11 farthest from the negative electrode 20 is electrically connected to the positive electrode 21 of the direct current 2.

Referring to FIG. 1, if the conductor or the semiconductor 11 is formed on the lower glass plate 10, the two end faces of the uppermost glass plate 10 need not form a conductor or the semiconductor 11, and if the conductor or the semiconductor 11 is formed In the upper glass plate 10, it is not necessary to form a conductor or semiconductor 11 at both end faces of the lowermost glass plate 10. In addition, of course, all of the glass sheets 10 may be selected such that one end surface is formed with a conductor or a semiconductor 11, but the conductor or the semiconductor 11 is to be in contact with the clean end surface of the other glass sheet 10 when stacked, and further, the stack is thus formed. One of the end faces will have a conductor (not disclosed) exposed to the outside, and the exposed conductor will not be electrically connected to the positive electrode 21.

Please continue to refer to Figure 1. In other words, the stacked body 1 has a plurality of glass plates 10, and each of the glass plates 10 has a conductor or a semiconductor 11 and a positive electrode. 21 is only electrically connected to the conductor or semiconductor 11 farthest from the negative electrode 20. That is, the stacked body 1 has a first end face 1a and a second end face 1b. In the first embodiment, the first end face 1a is electrically connected to the negative electrode 20, and the positive electrode 21 is electrically connected to the conductor or semiconductor closest to the second end face 1b. 11, the lowermost conductor or semiconductor 11 in FIG.

Please refer to FIG. 2 , which is a schematic diagram of electrical connections of the manufacturing method of the present invention. Wherein, the upper first end face 1a is electrically connected to the negative electrode 20, and the lowermost glass plate 10 protrudes from the edge of the other glass plate 10 to expose the conductor or the semiconductor 11, in order to facilitate the positive connection of the positive electrode 21 to the lowermost portion. The conductor or semiconductor 11 of the glass plate 10 and the negative electrode 20 of the direct current 2 are also electrically connected to the first end face 1a as in the previous embodiment. The second end face 1b is left untreated.

Fig. 3 is a schematic view showing another electrical connection of the manufacturing method of the present invention. Wherein the plurality of glass sheets 10 are stacked, and there are conductors or semiconductors 11 between any two adjacent glass sheets 10, and the glass sheets 10 in FIG. 3 are aligned and stacked, for convenience of conductors or semiconductors 11 Electrically connected to the positive electrode 21, the conductor or semiconductor 11 is exposed to the side edge of the glass plate 10 to form an overflow portion 11a to be electrically connected to the positive electrode 21. The negative electrode 20 of the direct current 2 is still connected to the first end face 1a. Therefore, the overflow portion 11a is a side edge of the conductor or the semiconductor 11 which is located furthest from the first end face 1a, in other words, the side of the conductor or the semiconductor 11 which is closest to the second end face 1b.

In summary, the "manufacturing method of the multilayer anode bonding structure" of the present invention is a method that can be performed at one time when a plurality of layers are to be anodic bonded, without being able to combine only one joint surface at a time, as in the conventional technique. Furthermore, Multiple layers of anodic bonding can be performed more smoothly through the conductor or semiconductor material between the layers. From this point of view, since the method of the present invention can perform multilayer anodic bonding at one time, not only the time for anodic bonding is reduced, but also the bonding strength between the layers is more stable to improve the yield, and it can be seen that the present invention has an anodic bonding technique. Great contribution.

Example:

A method of manufacturing a multilayer anode bonding structure, comprising the steps of: providing a DC power source having a positive electrode and a negative electrode; providing a plurality of glass plates; wherein, in addition to one of the glass plates, among the remaining plurality of glass plates Forming a conductor or a semiconductor layer on one end: stacking all the glass plates, contacting the conductor or semiconductor layer of one of the glass plates, contacting the end faces of the adjacent other glass plate without the conductor or the semiconductor layer, and then stacking them into a glass plate a stack; and electrically connecting one of the end faces of the stack to the negative electrode and electrically connecting a conductor or semiconductor layer farthest from the negative electrode to the positive electrode.

2. The method of embodiment 1, wherein the conductor or semiconductor layer is one selected from the group consisting of aluminum, iron, cobalt, nickel, rhodium, and ruthenium.

3. The method of embodiment 1, wherein the glass plate in which the conductor or semiconductor electrically connecting the positive electrode protrudes from the edge of the other glass sheet.

4. The method of embodiment 1, wherein the conductor or semiconductor layer formed on the glass plate furthest from the negative electrode is exposed at a side edge of the glass sheet to form an overflow portion to electrically connect the positive electrode.

A method of fabricating a multilayer anodic bonded structure, comprising the steps of: providing a stack having a plurality of glass sheets, each of the adjacent glass sheets having a conductor or a semiconductor therebetween, the stacked body having a first end face With one a second end surface; and electrically connecting a negative electrode to the first end surface of the stacked body, and electrically connecting a positive electrode to the conductor or semiconductor closest to the second end surface.

6. The manufacturing method according to embodiment 5, wherein the conductor or the semiconductor is formed on one end surface of each of the glass sheets before the plurality of glass sheets are formed into the stacked body.

The above-described embodiments are merely examples for the convenience of the description, and those skilled in the art will be modified as described above, and are not intended to be protected as claimed.

1‧‧‧Stack

1a‧‧‧ first end face

1b‧‧‧second end face

10‧‧‧ glass plate

11‧‧‧Conductor or semiconductor

11a‧‧‧Overflow

2‧‧‧DC

20‧‧‧negative

21‧‧‧ positive

1 is a schematic view showing a manufacturing method of the present invention; FIG. 2 is a schematic view showing an electrical connection of the manufacturing method of the present invention; and FIG. 3 is a schematic view showing another electrical connection of the manufacturing method of the present invention.

1‧‧‧Stack

1a‧‧‧ first end face

1b‧‧‧second end face

10‧‧‧ glass plate

11‧‧‧Conductor or semiconductor

2‧‧‧DC

20‧‧‧negative

21‧‧‧ positive

Claims (6)

A method for manufacturing a multilayer anode bonding structure, comprising the steps of: providing a DC power source having a positive electrode and a negative electrode; providing a plurality of glass plates; and excluding one of the glass plates, one of the remaining plurality of glass plates Forming a conductor or a semiconductor layer on the end face; stacking all the glass plates, contacting the conductor or semiconductor layer of one of the glass plates, contacting the end faces of the adjacent other glass plate without the conductor or the semiconductor layer, and then stacking them into a glass plate stack And electrically connecting one of the end faces of the stack to the negative electrode and electrically connecting the conductive or semiconducting layer formed by the glass plate farthest from the negative electrode to the positive electrode. The method of claim 1, wherein the conductor or the semiconductor layer is one selected from the group consisting of aluminum, iron, cobalt, nickel, rhodium, and ruthenium. The method of claim 1, wherein the glass plate in which the conductor or semiconductor electrically connected to the positive electrode is protruded from the edge of the other glass plate. The method of claim 1, wherein the conductor or semiconductor layer formed on the glass plate farthest from the negative electrode is exposed at a side edge of the glass plate to form an overflow portion to electrically connect the positive electrode. A method of fabricating a multilayer anode bonding structure comprising the steps of: providing a stack having a plurality of glass sheets, each of the adjacent glass sheets having a conductor or a semiconductor therebetween, the stacked body having a first end surface and a second end face; Electrically connecting a negative electrode to the first end surface of the stack, and electrically connecting a positive electrode to the conductor or semiconductor closest to the second end surface. The manufacturing method according to claim 5, wherein the conductor or the semiconductor is formed on one end surface of each of the glass sheets before the plurality of glass sheets are formed into the stacked body.