TW200814155A - Modular CVD epi 300 mm reactor - Google Patents

Modular CVD epi 300 mm reactor Download PDF

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Publication number
TW200814155A
TW200814155A TW096123866A TW96123866A TW200814155A TW 200814155 A TW200814155 A TW 200814155A TW 096123866 A TW096123866 A TW 096123866A TW 96123866 A TW96123866 A TW 96123866A TW 200814155 A TW200814155 A TW 200814155A
Authority
TW
Taiwan
Prior art keywords
chamber
module
modular
disposed
gas
Prior art date
Application number
TW096123866A
Other languages
English (en)
Chinese (zh)
Inventor
Brian H Burrows
Craig R Metzner
Dennis L Demars
Roger N Anderson
Juan M Chacin
David K Carlson
Masayuki David Ishikawa
Jeffrey Campbell
Richard O Collins
Keith M Magill
Imran Afzal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200814155A publication Critical patent/TW200814155A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical Vapour Deposition (AREA)
TW096123866A 2006-06-30 2007-06-29 Modular CVD epi 300 mm reactor TW200814155A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81807206P 2006-06-30 2006-06-30
US11/767,619 US20080072820A1 (en) 2006-06-30 2007-06-25 Modular cvd epi 300mm reactor

Publications (1)

Publication Number Publication Date
TW200814155A true TW200814155A (en) 2008-03-16

Family

ID=38895321

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123866A TW200814155A (en) 2006-06-30 2007-06-29 Modular CVD epi 300 mm reactor

Country Status (6)

Country Link
US (1) US20080072820A1 (https=)
JP (1) JP5313890B2 (https=)
KR (1) KR20090024830A (https=)
DE (1) DE112007001548T5 (https=)
TW (1) TW200814155A (https=)
WO (1) WO2008005754A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
USD642605S1 (en) 2010-04-02 2011-08-02 Applied Materials, Inc. Lid assembly for a substrate processing chamber
JP5833429B2 (ja) * 2011-12-20 2015-12-16 スタンレー電気株式会社 半導体製造装置
KR101911722B1 (ko) * 2012-01-10 2018-10-25 에스케이실트론 주식회사 반도체 제조장치용 정렬 장치
US9905444B2 (en) * 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
US10202707B2 (en) 2012-04-26 2019-02-12 Applied Materials, Inc. Substrate processing system with lamphead having temperature management
KR20140023807A (ko) * 2012-08-17 2014-02-27 삼성전자주식회사 반도체 소자를 제조하는 설비
JP6101504B2 (ja) * 2013-02-14 2017-03-22 株式会社日立ハイテクノロジーズ 真空処理装置のモジュール検査装置
KR102228941B1 (ko) * 2013-11-22 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 접근이 용이한 램프헤드
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
JP6210382B2 (ja) * 2014-09-05 2017-10-11 信越半導体株式会社 エピタキシャル成長装置
US20230154766A1 (en) * 2021-11-18 2023-05-18 Applied Materials, Inc. Pre-clean chamber assembly architecture for improved serviceability
CN114875384A (zh) * 2022-04-26 2022-08-09 江苏微导纳米科技股份有限公司 半导体加工设备
CN115064471B (zh) * 2022-08-01 2023-11-28 北京屹唐半导体科技股份有限公司 晶圆的热处理装置

Family Cites Families (22)

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US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
JPH10214117A (ja) * 1998-03-05 1998-08-11 Ckd Corp ガス供給集積ユニット及びそのシステム
US6019839A (en) * 1998-04-17 2000-02-01 Applied Materials, Inc. Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
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JP4294791B2 (ja) * 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
US6476362B1 (en) * 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
US6455814B1 (en) * 2001-11-07 2002-09-24 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP4215447B2 (ja) * 2002-04-17 2009-01-28 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
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KR100930148B1 (ko) * 2002-11-22 2009-12-08 어플라이드 머티어리얼스, 인코포레이티드 후면 가열 챔버
JP4522795B2 (ja) * 2003-09-04 2010-08-11 株式会社日立ハイテクノロジーズ 真空処理装置
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US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
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US20060137609A1 (en) * 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus

Also Published As

Publication number Publication date
KR20090024830A (ko) 2009-03-09
WO2008005754A3 (en) 2008-10-23
WO2008005754A2 (en) 2008-01-10
JP5313890B2 (ja) 2013-10-09
US20080072820A1 (en) 2008-03-27
DE112007001548T5 (de) 2009-05-07
JP2009543354A (ja) 2009-12-03

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