TW200802933A - Semiconductor emitting device substrate and method of fabricating the same - Google Patents

Semiconductor emitting device substrate and method of fabricating the same

Info

Publication number
TW200802933A
TW200802933A TW095121557A TW95121557A TW200802933A TW 200802933 A TW200802933 A TW 200802933A TW 095121557 A TW095121557 A TW 095121557A TW 95121557 A TW95121557 A TW 95121557A TW 200802933 A TW200802933 A TW 200802933A
Authority
TW
Taiwan
Prior art keywords
substrate
fabricating
same
emitting device
device substrate
Prior art date
Application number
TW095121557A
Other languages
English (en)
Other versions
TWI304278B (en
Inventor
Chang-Cheng Chuo
Chih-Ming Lai
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW095121557A priority Critical patent/TWI304278B/zh
Priority to US11/470,620 priority patent/US7427772B2/en
Publication of TW200802933A publication Critical patent/TW200802933A/zh
Priority to US12/183,058 priority patent/US20080305571A1/en
Application granted granted Critical
Publication of TWI304278B publication Critical patent/TWI304278B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
TW095121557A 2006-06-16 2006-06-16 Semiconductor emitting device substrate and method of fabricating the same TWI304278B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095121557A TWI304278B (en) 2006-06-16 2006-06-16 Semiconductor emitting device substrate and method of fabricating the same
US11/470,620 US7427772B2 (en) 2006-06-16 2006-09-06 Semiconductor light emitting device substrate and method of fabricating the same
US12/183,058 US20080305571A1 (en) 2006-06-16 2008-07-30 Method of fabricating semiconductor light emitting device substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095121557A TWI304278B (en) 2006-06-16 2006-06-16 Semiconductor emitting device substrate and method of fabricating the same

Publications (2)

Publication Number Publication Date
TW200802933A true TW200802933A (en) 2008-01-01
TWI304278B TWI304278B (en) 2008-12-11

Family

ID=38860655

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121557A TWI304278B (en) 2006-06-16 2006-06-16 Semiconductor emitting device substrate and method of fabricating the same

Country Status (2)

Country Link
US (2) US7427772B2 (zh)
TW (1) TWI304278B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760794A (zh) * 2011-04-29 2012-10-31 山东华光光电子有限公司 一种低应力的氮化镓外延层的制备方法
TWI574433B (zh) * 2015-02-09 2017-03-11 High-energy non-visible light-emitting diodes with safety instructions

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TWI304278B (en) * 2006-06-16 2008-12-11 Ind Tech Res Inst Semiconductor emitting device substrate and method of fabricating the same
TW201442280A (zh) 2007-11-30 2014-11-01 Univ California 利用表面粗糙之高度光取出效率之氮化物基發光二極體
WO2009084325A1 (ja) * 2007-12-28 2009-07-09 Mitsubishi Chemical Corporation Ｌｅｄ素子およびｌｅｄ素子の製造方法
CN101599516B (zh) * 2008-06-03 2011-09-07 姜涛 一种提高发光芯片光出射窗口出光率的加工方法
CN101877377B (zh) * 2009-04-30 2011-12-14 比亚迪股份有限公司 一种分立发光二极管的外延片及其制造方法
KR20110043282A (ko) * 2009-10-21 2011-04-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8859305B2 (en) 2010-02-10 2014-10-14 Macron Technology, Inc. Light emitting diodes and associated methods of manufacturing
US8390010B2 (en) 2010-03-25 2013-03-05 Micron Technology, Inc. Solid state lighting devices with cellular arrays and associated methods of manufacturing
US20130130417A1 (en) * 2011-11-22 2013-05-23 Jar-Yu WU Manufacturing method of a light-emitting device
CN102651438B (zh) * 2011-02-28 2015-05-13 比亚迪股份有限公司 衬底、该衬底的制备方法及具有该衬底的芯片
CN102856442B (zh) * 2011-06-27 2015-07-22 山东华光光电子有限公司 一种提高蓝宝石衬底氮化镓外延层均匀性的方法
DE102011117381A1 (de) * 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR101603207B1 (ko) 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
KR101554032B1 (ko) 2013-01-29 2015-09-18 삼성전자주식회사 나노구조 반도체 발광소자
KR102022266B1 (ko) 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
TWI514621B (zh) * 2013-06-14 2015-12-21 Lextar Electronics Corp 發光二極體結構
CN104393127B (zh) * 2014-11-18 2017-05-03 中国科学院半导体研究所 一种倒装结构发光二极管及其制作方法
CN111509095B (zh) 2019-01-31 2022-01-04 财团法人工业技术研究院 复合式基板及其制造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760794A (zh) * 2011-04-29 2012-10-31 山东华光光电子有限公司 一种低应力的氮化镓外延层的制备方法
CN102760794B (zh) * 2011-04-29 2015-04-01 山东华光光电子有限公司 一种低应力的氮化镓外延层的制备方法
TWI574433B (zh) * 2015-02-09 2017-03-11 High-energy non-visible light-emitting diodes with safety instructions

Also Published As

Publication number Publication date
US7427772B2 (en) 2008-09-23
US20070290188A1 (en) 2007-12-20
TWI304278B (en) 2008-12-11
US20080305571A1 (en) 2008-12-11

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