TW200802805A - Nonvolatile memory cell and memory system - Google Patents

Nonvolatile memory cell and memory system

Info

Publication number
TW200802805A
TW200802805A TW095149907A TW95149907A TW200802805A TW 200802805 A TW200802805 A TW 200802805A TW 095149907 A TW095149907 A TW 095149907A TW 95149907 A TW95149907 A TW 95149907A TW 200802805 A TW200802805 A TW 200802805A
Authority
TW
Taiwan
Prior art keywords
type memory
resistive type
port
memory system
read access
Prior art date
Application number
TW095149907A
Other languages
English (en)
Other versions
TWI325631B (en
Inventor
Jhon-Jhy Liaw
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200802805A publication Critical patent/TW200802805A/zh
Application granted granted Critical
Publication of TWI325631B publication Critical patent/TWI325631B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
TW095149907A 2006-06-28 2006-12-29 Nonvolatile memory cell and memory system TWI325631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/427,253 US7403413B2 (en) 2006-06-28 2006-06-28 Multiple port resistive memory cell

Publications (2)

Publication Number Publication Date
TW200802805A true TW200802805A (en) 2008-01-01
TWI325631B TWI325631B (en) 2010-06-01

Family

ID=38876441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149907A TWI325631B (en) 2006-06-28 2006-12-29 Nonvolatile memory cell and memory system

Country Status (3)

Country Link
US (1) US7403413B2 (zh)
CN (1) CN101097776B (zh)
TW (1) TWI325631B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8009467B2 (en) * 2007-05-29 2011-08-30 Nec Corporation Magnetic random access memory
US8399931B2 (en) 2010-06-30 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout for multiple-fin SRAM cell
US8675397B2 (en) 2010-06-25 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Cell structure for dual-port SRAM
US8315081B2 (en) * 2010-03-22 2012-11-20 Qualcomm Incorporated Memory cell that includes multiple non-volatile memories
US8400822B2 (en) * 2010-03-22 2013-03-19 Qualcomm Incorporated Multi-port non-volatile memory that includes a resistive memory element
KR102131746B1 (ko) 2013-09-27 2020-07-08 인텔 코포레이션 Stt-mram 사이즈와 쓰기 오류율을 최적화하기 위한 장치 및 방법
WO2015065462A1 (en) * 2013-10-31 2015-05-07 Intel Corporation Apparatus for improving read and write operations of a nonvolatile memory
KR102358564B1 (ko) * 2015-09-02 2022-02-04 삼성전자주식회사 단락된 메모리 셀의 가변 저항 소자를 갖는 반도체 메모리 장치
TW202127438A (zh) * 2020-01-07 2021-07-16 聯華電子股份有限公司 記憶體

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923593A (en) * 1996-12-17 1999-07-13 Monolithic Systems, Inc. Multi-port DRAM cell and memory system using same
US6609174B1 (en) * 1999-10-19 2003-08-19 Motorola, Inc. Embedded MRAMs including dual read ports
US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
JP4047615B2 (ja) * 2002-04-03 2008-02-13 株式会社ルネサステクノロジ 磁気記憶装置
TWI251335B (en) * 2003-09-15 2006-03-11 Promos Technologies Inc Dynamic random access memory cell and fabrication thereof

Also Published As

Publication number Publication date
US20080002453A1 (en) 2008-01-03
CN101097776A (zh) 2008-01-02
CN101097776B (zh) 2010-11-10
TWI325631B (en) 2010-06-01
US7403413B2 (en) 2008-07-22

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