TW200746093A - Method for manufacturing sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic recording media film, sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic - Google Patents

Method for manufacturing sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic recording media film, sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic

Info

Publication number
TW200746093A
TW200746093A TW096111563A TW96111563A TW200746093A TW 200746093 A TW200746093 A TW 200746093A TW 096111563 A TW096111563 A TW 096111563A TW 96111563 A TW96111563 A TW 96111563A TW 200746093 A TW200746093 A TW 200746093A
Authority
TW
Taiwan
Prior art keywords
sputtering target
plane relative
magnetic permeability
low
forming perpendicular
Prior art date
Application number
TW096111563A
Other languages
Chinese (zh)
Inventor
Sohei Nonaka
Yoshinori Shirai
Yukiya Sugiuchi
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006260118A external-priority patent/JP2007291489A/en
Priority claimed from JP2007078249A external-priority patent/JP2008240012A/en
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW200746093A publication Critical patent/TW200746093A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

This method for manufacturing a sputtering target for forming perpendicular magnetic recording media film includes subjecting a plate sintered compact having a composition including a nonmagnetic oxide of 2 to 15 mol%, Cr of 3 to 20 mol%, Pt of 5 to 30 mol%, and a reminder of Co and unavoidable impurities to a compression process in a thickness direction while holding the plate sintered compact at a temperature of 450EG C or less. The first aspect of this sputtering target for forming perpendicular magnetic recording media film has a maximum in-plane relative magnetic permeability of 50 or less and is manufactured by the above method. The second aspect of this sputtering target for forming perpendicular magnetic recording media film has a composition including a nonmagnetic oxide of 2 to 15 mol%, Cr of 3 to 20 mol%, Pt of 5 to 30 mol%, and a reminder of Co and unavoidable impurities, and in-plane relative magnetic permeability of 50 or less, and the in-plane relative magnetic permeability is smaller than the relative magnetic permeability in the thickness direction.
TW096111563A 2006-03-31 2007-03-30 Method for manufacturing sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic recording media film, sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic TW200746093A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006097226 2006-03-31
JP2006260118A JP2007291489A (en) 2006-03-31 2006-09-26 Method for manufacturing sputtering target to be used in forming film of perpendicular magnetic recording medium having low relative magnetic permeability in in-plane direction
JP2007078249A JP2008240012A (en) 2007-03-26 2007-03-26 Sputtering target for vertical magnetic recording medium film formation having high leakage magnetic flux density

Publications (1)

Publication Number Publication Date
TW200746093A true TW200746093A (en) 2007-12-16

Family

ID=38563624

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111563A TW200746093A (en) 2006-03-31 2007-03-30 Method for manufacturing sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic recording media film, sputtering target having low in-plane relative magnetic permeability for forming perpendicular magnetic

Country Status (2)

Country Link
TW (1) TW200746093A (en)
WO (1) WO2007114356A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5204460B2 (en) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 Sputtering target for magnetic recording film and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05247638A (en) * 1992-03-03 1993-09-24 Mitsubishi Materials Corp Sputtering target and manufacture therefore
JPH05295537A (en) * 1992-04-23 1993-11-09 Kobe Steel Ltd Target material for sputtering cobalt alloy
JP2001236643A (en) * 2000-02-23 2001-08-31 Fuji Electric Co Ltd Sputtering target for manufacturing magnetic recording medium, method of manufacturing magnetic recording medium by using the same, and magnetic recording medium
JP2003036525A (en) * 2001-07-25 2003-02-07 Fuji Electric Co Ltd Perpendicular magnetic recording medium and its manufacturing method
JP2003073817A (en) * 2001-08-31 2003-03-12 Mitsubishi Materials Corp Sputtering target and arranging method therefor
JP2004339586A (en) * 2003-05-19 2004-12-02 Mitsubishi Materials Corp Sputtering target for forming magnetic recording film, and its production method
TWI270060B (en) * 2004-06-07 2007-01-01 Showa Denko Kk Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus

Also Published As

Publication number Publication date
WO2007114356A1 (en) 2007-10-11

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