TW200610737A - Ferromagnetic ferroelectric substance and process for producing the same - Google Patents

Ferromagnetic ferroelectric substance and process for producing the same

Info

Publication number
TW200610737A
TW200610737A TW094130386A TW94130386A TW200610737A TW 200610737 A TW200610737 A TW 200610737A TW 094130386 A TW094130386 A TW 094130386A TW 94130386 A TW94130386 A TW 94130386A TW 200610737 A TW200610737 A TW 200610737A
Authority
TW
Taiwan
Prior art keywords
producing
ferroelectric substance
same
ferromagnetic
ferromagnetic ferroelectric
Prior art date
Application number
TW094130386A
Other languages
Chinese (zh)
Inventor
Masaki Azuma
Takahito Terashima
Kazuhide Takata
Masayuki Hashisaka
Shintaro Ishiwata
Yuichi Shimakawa
Mikio Takano
Original Assignee
Univ Kyoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Kyoto filed Critical Univ Kyoto
Publication of TW200610737A publication Critical patent/TW200610737A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • C01G45/006—Compounds containing, besides manganese, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G53/00—Compounds of nickel
    • C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1933—Perovskites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Insulating Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Soft Magnetic Materials (AREA)
  • Thin Magnetic Films (AREA)
  • Compounds Of Iron (AREA)
  • Hard Magnetic Materials (AREA)

Abstract

A novel material simultaneously having ferromagnetism and ferroelectricity. There is provided a ferromagnetic ferroelectric substance characterized in that it is a substance of the perovskite structure of the composition formula Bi2MM'O6 or Pb2MM'O6 wherein M is a transition metal ion having an electron in part of its eg-orbit while M' is a transition metal ion having no electron in its eg-orbit. In particular, Bi2CuMnO6 has a ferromagnetic transition temperature of 340 K, simultaneously exhibiting ferromagnetism and ferroelectricity even at room temperature.
TW094130386A 2004-09-08 2005-09-05 Ferromagnetic ferroelectric substance and process for producing the same TW200610737A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004261629 2004-09-08

Publications (1)

Publication Number Publication Date
TW200610737A true TW200610737A (en) 2006-04-01

Family

ID=36036290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130386A TW200610737A (en) 2004-09-08 2005-09-05 Ferromagnetic ferroelectric substance and process for producing the same

Country Status (3)

Country Link
JP (1) JPWO2006028005A1 (en)
TW (1) TW200610737A (en)
WO (1) WO2006028005A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007135817A1 (en) * 2006-05-24 2007-11-29 Japan Science And Technology Agency Multiferroic element
JP5564701B2 (en) * 2007-05-16 2014-08-06 学校法人上智学院 Room temperature magnetic ferroelectric superlattice and method of manufacturing the same
WO2014030293A1 (en) * 2012-08-21 2014-02-27 国立大学法人東京工業大学 Negative thermal expansion material
JP6103524B2 (en) * 2013-02-06 2017-03-29 国立研究開発法人物質・材料研究機構 Perovskite nanosheets based on homologous series layered perovskite oxide and uses thereof
US10242989B2 (en) * 2014-05-20 2019-03-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
JP6546483B2 (en) * 2015-08-31 2019-07-17 地方独立行政法人神奈川県立産業技術総合研究所 Method of manufacturing negative thermal expansion material
KR102148944B1 (en) * 2019-05-03 2020-08-28 울산과학기술원 Room-temperature multiferroic materials, preparing method of the same and electronic device comprising the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141205A (en) * 1986-12-04 1988-06-13 太陽誘電株式会社 Dielectric ceramic
JPH02170306A (en) * 1988-12-23 1990-07-02 Olympus Optical Co Ltd Ferromagnetic ferroelectric oxide and manufacture of thin film thereof
US5164349A (en) * 1990-06-29 1992-11-17 Ube Industries Ltd. Electromagnetic effect material
JPH07221356A (en) * 1994-02-01 1995-08-18 Hitachi Ltd Semiconductor element and its integrated circuit
JP3969833B2 (en) * 1998-04-02 2007-09-05 独立行政法人科学技術振興機構 Ferromagnetic ferroelectric thin film and manufacturing method thereof

Also Published As

Publication number Publication date
JPWO2006028005A1 (en) 2008-05-08
WO2006028005A1 (en) 2006-03-16

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