TW200744286A - Active matrix device - Google Patents
Active matrix deviceInfo
- Publication number
- TW200744286A TW200744286A TW095129252A TW95129252A TW200744286A TW 200744286 A TW200744286 A TW 200744286A TW 095129252 A TW095129252 A TW 095129252A TW 95129252 A TW95129252 A TW 95129252A TW 200744286 A TW200744286 A TW 200744286A
- Authority
- TW
- Taiwan
- Prior art keywords
- power line
- line
- diode
- active matrix
- matrix device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/436,421 US20070268637A1 (en) | 2006-05-18 | 2006-05-18 | Active matrix device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200744286A true TW200744286A (en) | 2007-12-01 |
Family
ID=38711759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095129252A TW200744286A (en) | 2006-05-18 | 2006-08-09 | Active matrix device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070268637A1 (zh) |
JP (1) | JP2007310338A (zh) |
KR (1) | KR20070111940A (zh) |
CN (1) | CN101075611A (zh) |
TW (1) | TW200744286A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI285950B (en) * | 2006-01-20 | 2007-08-21 | Au Optronics Corp | Electro static discharge protection circuit and diode thereof |
KR101448002B1 (ko) | 2008-04-14 | 2014-10-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN106773381B (zh) * | 2012-09-20 | 2020-06-09 | 上海中航光电子有限公司 | 一种防静电显示面板 |
JP6022118B2 (ja) * | 2014-04-30 | 2016-11-09 | シャープ株式会社 | アクティブマトリクス基板及び当該アクティブマトリクス基板を備える表示装置 |
CN106597768A (zh) * | 2016-12-27 | 2017-04-26 | 武汉华星光电技术有限公司 | 静电放电保护电路和液晶显示面板 |
US11366366B2 (en) * | 2019-02-13 | 2022-06-21 | Sharp Kabushiki Kaisha | Active matrix substrate and photoelectric imaging panel with the same |
CN109856875B (zh) * | 2019-02-28 | 2022-06-21 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06335162A (ja) * | 1993-03-19 | 1994-12-02 | Nec Corp | 半導体集積回路 |
KR940022124A (ko) * | 1993-03-24 | 1994-10-20 | 이헌조 | 액정표시장치 |
JPH0980471A (ja) * | 1995-09-07 | 1997-03-28 | Sony Corp | 液晶表示装置の保護回路 |
JP2002305254A (ja) * | 2001-04-05 | 2002-10-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2006060191A (ja) * | 2004-07-23 | 2006-03-02 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、電子機器 |
JP2006065284A (ja) * | 2004-07-26 | 2006-03-09 | Seiko Epson Corp | 発光装置及び電子機器 |
US20060132996A1 (en) * | 2004-12-17 | 2006-06-22 | Poulton John W | Low-capacitance electro-static discharge protection |
-
2006
- 2006-05-18 US US11/436,421 patent/US20070268637A1/en not_active Abandoned
- 2006-07-27 KR KR1020060070985A patent/KR20070111940A/ko not_active Application Discontinuation
- 2006-08-09 TW TW095129252A patent/TW200744286A/zh unknown
- 2006-08-15 CN CNA2006101110964A patent/CN101075611A/zh active Pending
- 2006-08-29 JP JP2006232127A patent/JP2007310338A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2007310338A (ja) | 2007-11-29 |
KR20070111940A (ko) | 2007-11-22 |
US20070268637A1 (en) | 2007-11-22 |
CN101075611A (zh) | 2007-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102693978B (zh) | 静电放电保护电路 | |
TW200744286A (en) | Active matrix device | |
US9076807B2 (en) | Overvoltage protection for multi-chip module and system-in-package | |
TW200515583A (en) | Static electricity protective circuit and high-frequency circuit apparatus incorporating the same | |
EP2472698A3 (en) | On-board power supply system and protection method | |
TW200644212A (en) | ESD protection circuit with SCR structure for semiconductor device | |
WO2011139459A3 (en) | Overvoltage protection circuit for an integrated circuit | |
EP2072080A3 (en) | Battery protection and zero-volt battery recovery system for an implantable medical device | |
TW200735323A (en) | High-voltage tolerant power-rail ESD clamp circuit for mixed-voltage I/O interface | |
TW200707692A (en) | ESD protection circuit | |
US20120104459A1 (en) | Bi-directional scr esd device | |
TW200727449A (en) | ESD protection system for multiple-domain integrated cirucit | |
TW200601544A (en) | Semiconductor structure and method for esd protection | |
US10134725B2 (en) | Electrostatic discharge protection circuit applied in integrated circuit | |
TW200637096A (en) | Power clamp circuit and semiconductor device | |
TW200601541A (en) | Separated power ESD protection circuit and integrated circuit using the same | |
JP2014082922A (ja) | 半導体装置 | |
TW200731498A (en) | Electrostatic protection device | |
JP2009165114A5 (zh) | ||
CN101814525A (zh) | 用于FinFET的ESD保护 | |
TW200603351A (en) | Semiconductor device | |
TW200717766A (en) | Integrated circuit and ESD proteciton system | |
WO2004068543A3 (en) | Electrostatic discharge circuit and method therefor | |
TW200703611A (en) | Semiconductor integrated circuit device | |
CN103840443A (zh) | 一种电源保护电路及其芯片 |