TW200744286A - Active matrix device - Google Patents

Active matrix device

Info

Publication number
TW200744286A
TW200744286A TW095129252A TW95129252A TW200744286A TW 200744286 A TW200744286 A TW 200744286A TW 095129252 A TW095129252 A TW 095129252A TW 95129252 A TW95129252 A TW 95129252A TW 200744286 A TW200744286 A TW 200744286A
Authority
TW
Taiwan
Prior art keywords
power line
line
diode
active matrix
matrix device
Prior art date
Application number
TW095129252A
Other languages
English (en)
Inventor
Yuchen Hsu
Chuanfeng Liu
Chiahao Kuo
Original Assignee
Prime View Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prime View Int Co Ltd filed Critical Prime View Int Co Ltd
Publication of TW200744286A publication Critical patent/TW200744286A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
TW095129252A 2006-05-18 2006-08-09 Active matrix device TW200744286A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/436,421 US20070268637A1 (en) 2006-05-18 2006-05-18 Active matrix device

Publications (1)

Publication Number Publication Date
TW200744286A true TW200744286A (en) 2007-12-01

Family

ID=38711759

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129252A TW200744286A (en) 2006-05-18 2006-08-09 Active matrix device

Country Status (5)

Country Link
US (1) US20070268637A1 (zh)
JP (1) JP2007310338A (zh)
KR (1) KR20070111940A (zh)
CN (1) CN101075611A (zh)
TW (1) TW200744286A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI285950B (en) * 2006-01-20 2007-08-21 Au Optronics Corp Electro static discharge protection circuit and diode thereof
KR101448002B1 (ko) 2008-04-14 2014-10-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN106773381B (zh) * 2012-09-20 2020-06-09 上海中航光电子有限公司 一种防静电显示面板
JP6022118B2 (ja) * 2014-04-30 2016-11-09 シャープ株式会社 アクティブマトリクス基板及び当該アクティブマトリクス基板を備える表示装置
CN106597768A (zh) * 2016-12-27 2017-04-26 武汉华星光电技术有限公司 静电放电保护电路和液晶显示面板
US11366366B2 (en) * 2019-02-13 2022-06-21 Sharp Kabushiki Kaisha Active matrix substrate and photoelectric imaging panel with the same
CN109856875B (zh) * 2019-02-28 2022-06-21 京东方科技集团股份有限公司 阵列基板、显示面板、显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06335162A (ja) * 1993-03-19 1994-12-02 Nec Corp 半導体集積回路
KR940022124A (ko) * 1993-03-24 1994-10-20 이헌조 액정표시장치
JPH0980471A (ja) * 1995-09-07 1997-03-28 Sony Corp 液晶表示装置の保護回路
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2006065284A (ja) * 2004-07-26 2006-03-09 Seiko Epson Corp 発光装置及び電子機器
US20060132996A1 (en) * 2004-12-17 2006-06-22 Poulton John W Low-capacitance electro-static discharge protection

Also Published As

Publication number Publication date
JP2007310338A (ja) 2007-11-29
KR20070111940A (ko) 2007-11-22
US20070268637A1 (en) 2007-11-22
CN101075611A (zh) 2007-11-21

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