TW200742112A - Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency - Google Patents

Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency

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Publication number
TW200742112A
TW200742112A TW095113989A TW95113989A TW200742112A TW 200742112 A TW200742112 A TW 200742112A TW 095113989 A TW095113989 A TW 095113989A TW 95113989 A TW95113989 A TW 95113989A TW 200742112 A TW200742112 A TW 200742112A
Authority
TW
Taiwan
Prior art keywords
emitting diode
light
izo
ohmic contact
extraction efficiency
Prior art date
Application number
TW095113989A
Other languages
English (en)
Other versions
TWI297222B (zh
Inventor
Kuo-Ruei Huang
jia-bin Song
Mei-Jia Song
Original Assignee
Tyntek Corp
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Filing date
Publication date
Application filed by Tyntek Corp filed Critical Tyntek Corp
Priority to TW095113989A priority Critical patent/TW200742112A/zh
Publication of TW200742112A publication Critical patent/TW200742112A/zh
Application granted granted Critical
Publication of TWI297222B publication Critical patent/TWI297222B/zh

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TW095113989A 2006-04-19 2006-04-19 Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency TW200742112A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095113989A TW200742112A (en) 2006-04-19 2006-04-19 Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095113989A TW200742112A (en) 2006-04-19 2006-04-19 Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency

Publications (2)

Publication Number Publication Date
TW200742112A true TW200742112A (en) 2007-11-01
TWI297222B TWI297222B (zh) 2008-05-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113989A TW200742112A (en) 2006-04-19 2006-04-19 Structure and manufacturing method of GaN light-emitting diode device with high light extraction efficiency

Country Status (1)

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TW (1) TW200742112A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408832B (zh) * 2009-03-30 2013-09-11 Huga Optotech Inc 具有中空結構之柱狀結構之發光元件及其形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408832B (zh) * 2009-03-30 2013-09-11 Huga Optotech Inc 具有中空結構之柱狀結構之發光元件及其形成方法

Also Published As

Publication number Publication date
TWI297222B (zh) 2008-05-21

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MM4A Annulment or lapse of patent due to non-payment of fees