TW200739701A - Apparatus and method for processing substrate and recording medium - Google Patents

Apparatus and method for processing substrate and recording medium

Info

Publication number
TW200739701A
TW200739701A TW095141331A TW95141331A TW200739701A TW 200739701 A TW200739701 A TW 200739701A TW 095141331 A TW095141331 A TW 095141331A TW 95141331 A TW95141331 A TW 95141331A TW 200739701 A TW200739701 A TW 200739701A
Authority
TW
Taiwan
Prior art keywords
substrate
processing
state
mounting stand
recording medium
Prior art date
Application number
TW095141331A
Other languages
English (en)
Chinese (zh)
Other versions
TWI313893B (enExample
Inventor
Yusuke Muraki
Shigeki Tozawa
Takehiko Orii
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200739701A publication Critical patent/TW200739701A/zh
Application granted granted Critical
Publication of TWI313893B publication Critical patent/TWI313893B/zh

Links

Classifications

    • H10P72/0452
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/791Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H10P50/242
    • H10P72/0434
    • H10P72/0478
    • H10P72/7614
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01Manufacture or treatment
    • H10D62/021Forming source or drain recesses by etching e.g. recessing by etching and then refilling

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095141331A 2005-11-08 2006-11-08 Apparatus and method for processing substrate and recording medium TW200739701A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005323329A JP4976002B2 (ja) 2005-11-08 2005-11-08 基板処理装置,基板処理方法及び記録媒体

Publications (2)

Publication Number Publication Date
TW200739701A true TW200739701A (en) 2007-10-16
TWI313893B TWI313893B (enExample) 2009-08-21

Family

ID=38023193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141331A TW200739701A (en) 2005-11-08 2006-11-08 Apparatus and method for processing substrate and recording medium

Country Status (3)

Country Link
JP (1) JP4976002B2 (enExample)
TW (1) TW200739701A (enExample)
WO (1) WO2007055190A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478280B2 (ja) * 2010-01-27 2014-04-23 東京エレクトロン株式会社 基板加熱装置および基板加熱方法、ならびに基板処理システム
JP6400361B2 (ja) 2014-07-16 2018-10-03 東京エレクトロン株式会社 基板洗浄方法、基板処理方法、基板処理システム、および半導体装置の製造方法
JP6692202B2 (ja) * 2016-04-08 2020-05-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7145019B2 (ja) * 2018-09-19 2022-09-30 株式会社Screenホールディングス レシピ変換方法、レシピ変換プログラム、レシピ変換装置および基板処理システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4124543B2 (ja) * 1998-11-11 2008-07-23 東京エレクトロン株式会社 表面処理方法及びその装置
JP2004128019A (ja) * 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP4039385B2 (ja) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 ケミカル酸化膜の除去方法

Also Published As

Publication number Publication date
JP2007134379A (ja) 2007-05-31
JP4976002B2 (ja) 2012-07-18
TWI313893B (enExample) 2009-08-21
WO2007055190A1 (ja) 2007-05-18

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