TW200739110A - Hole inspection apparatus and hole inspection method using the same - Google Patents
Hole inspection apparatus and hole inspection method using the sameInfo
- Publication number
- TW200739110A TW200739110A TW096111560A TW96111560A TW200739110A TW 200739110 A TW200739110 A TW 200739110A TW 096111560 A TW096111560 A TW 096111560A TW 96111560 A TW96111560 A TW 96111560A TW 200739110 A TW200739110 A TW 200739110A
- Authority
- TW
- Taiwan
- Prior art keywords
- hole inspection
- beam irradiation
- current measuring
- electron beam
- electron beams
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
- H01J2237/0635—Multiple source, e.g. comb or array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060030129 | 2006-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739110A true TW200739110A (en) | 2007-10-16 |
TWI334933B TWI334933B (en) | 2010-12-21 |
Family
ID=38563867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096111560A TWI334933B (en) | 2006-04-03 | 2007-04-02 | Hole inspection apparatus and hole inspection method using the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US7968844B2 (zh) |
EP (1) | EP2002473A4 (zh) |
JP (1) | JP2009532894A (zh) |
KR (4) | KR20130100191A (zh) |
CN (1) | CN101416295A (zh) |
TW (1) | TWI334933B (zh) |
WO (1) | WO2007114642A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102053106B (zh) * | 2009-11-09 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 一种缺陷检测方法 |
US20110294071A1 (en) * | 2010-05-28 | 2011-12-01 | Canon Kabushiki Kaisha | Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus |
WO2011151116A1 (en) * | 2010-06-03 | 2011-12-08 | Carl Zeiss Sms Gmbh | A method for determining the performance of a photolithographic mask |
US8399264B2 (en) * | 2010-11-30 | 2013-03-19 | Intel Corporation | Alignment inspection |
KR101339227B1 (ko) | 2011-12-08 | 2013-12-11 | 기아자동차주식회사 | 자동변속기의 댐퍼 클러치 제어방법 |
US9304160B1 (en) | 2012-05-08 | 2016-04-05 | Kla-Tencor Corporation | Defect inspection apparatus, system, and method |
JP6069723B2 (ja) * | 2012-06-06 | 2017-02-01 | 澁谷工業株式会社 | 微小ボール搭載ワークのリペア装置 |
US9932664B2 (en) * | 2012-11-06 | 2018-04-03 | Purdue Research Foundation | Methods for directed irradiation synthesis with ion and thermal beams |
JP5965851B2 (ja) * | 2013-02-15 | 2016-08-10 | 株式会社日立ハイテクノロジーズ | 試料観察装置 |
KR102086362B1 (ko) | 2013-03-08 | 2020-03-09 | 삼성전자주식회사 | 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법 |
WO2014189465A1 (en) * | 2013-05-23 | 2014-11-27 | Tao Luo | Multi-column electron beam inspection that uses custom printing methods |
JP2015141985A (ja) * | 2014-01-28 | 2015-08-03 | 株式会社東芝 | 検査装置、及び検査方法 |
KR20170031806A (ko) * | 2015-08-13 | 2017-03-22 | 한국기계연구원 | 전자빔을 이용한 인쇄회로기판의 검사장치 및 방법 |
KR101720697B1 (ko) * | 2016-07-06 | 2017-04-03 | 씨이비티 주식회사 | 대면적 전계방출원 장치에의 전자 방출원의 균일 방출 검사 방법 |
CN108615666B (zh) * | 2016-12-09 | 2024-04-19 | 上海凯世通半导体股份有限公司 | 束流检测装置 |
US10649026B2 (en) * | 2017-03-30 | 2020-05-12 | Globalfoundries Inc. | Apparatus for and method of net trace prior level subtraction |
JP7218381B2 (ja) * | 2018-10-25 | 2023-02-06 | 株式会社日立ハイテク | 荷電粒子線装置、荷電粒子線装置のオートフォーカス処理方法、及び検出器 |
CN113383404A (zh) | 2018-12-31 | 2021-09-10 | Asml荷兰有限公司 | 用于扫描样品的带电粒子束系统 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384463A (en) * | 1991-06-10 | 1995-01-24 | Fujisu Limited | Pattern inspection apparatus and electron beam apparatus |
JP2970113B2 (ja) | 1991-09-20 | 1999-11-02 | 富士通株式会社 | パターン検査装置 |
JP2000100369A (ja) * | 1998-09-28 | 2000-04-07 | Jeol Ltd | 荷電粒子ビーム装置 |
JP3175765B2 (ja) * | 1998-12-08 | 2001-06-11 | 日本電気株式会社 | 半導体ウエハーの検査方法 |
JP3749107B2 (ja) * | 1999-11-05 | 2006-02-22 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
JP3732738B2 (ja) * | 2000-12-08 | 2006-01-11 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
JP2002231780A (ja) * | 2001-01-30 | 2002-08-16 | Jeol Ltd | 荷電粒子ビームを用いたホールの検査方法 |
US7038224B2 (en) * | 2002-07-30 | 2006-05-02 | Applied Materials, Israel, Ltd. | Contact opening metrology |
US7078690B2 (en) | 2002-02-04 | 2006-07-18 | Applied Materials, Israel, Ltd. | Monitoring of contact hole production |
JP2004071954A (ja) * | 2002-08-08 | 2004-03-04 | Jeol Ltd | ホールの検査方法 |
US7592586B2 (en) * | 2003-01-27 | 2009-09-22 | Ebara Corporation | Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample |
JP4080902B2 (ja) | 2003-01-30 | 2008-04-23 | 株式会社トプコン | 半導体デバイス解析装置および解析方法 |
KR100562701B1 (ko) * | 2004-01-07 | 2006-03-23 | 삼성전자주식회사 | 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법 |
JP2005233757A (ja) * | 2004-02-19 | 2005-09-02 | Oki Electric Ind Co Ltd | ホールパターン検査方法及びホールパターン検査装置 |
-
2007
- 2007-04-02 TW TW096111560A patent/TWI334933B/zh not_active IP Right Cessation
- 2007-04-03 KR KR1020137017197A patent/KR20130100191A/ko not_active Application Discontinuation
- 2007-04-03 KR KR1020147013967A patent/KR101484454B1/ko active IP Right Grant
- 2007-04-03 WO PCT/KR2007/001634 patent/WO2007114642A1/en active Application Filing
- 2007-04-03 CN CNA200780011762XA patent/CN101416295A/zh active Pending
- 2007-04-03 EP EP07745797A patent/EP2002473A4/en not_active Withdrawn
- 2007-04-03 JP JP2009504120A patent/JP2009532894A/ja active Pending
- 2007-04-03 KR KR1020117024842A patent/KR20110131301A/ko not_active Application Discontinuation
- 2007-04-03 KR KR1020087023284A patent/KR20080102232A/ko not_active Application Discontinuation
- 2007-04-03 US US12/295,770 patent/US7968844B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20130100191A (ko) | 2013-09-09 |
KR101484454B1 (ko) | 2015-01-22 |
EP2002473A4 (en) | 2011-08-03 |
JP2009532894A (ja) | 2009-09-10 |
KR20080102232A (ko) | 2008-11-24 |
EP2002473A1 (en) | 2008-12-17 |
KR20110131301A (ko) | 2011-12-06 |
TWI334933B (en) | 2010-12-21 |
US7968844B2 (en) | 2011-06-28 |
CN101416295A (zh) | 2009-04-22 |
WO2007114642A1 (en) | 2007-10-11 |
US20090152461A1 (en) | 2009-06-18 |
KR20140100477A (ko) | 2014-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200739110A (en) | Hole inspection apparatus and hole inspection method using the same | |
WO2005098400A3 (en) | Eliminating cross-talk in a backscatter inspection portal comprising multiples sources by ensuring that only one source is emitting radiation at a time | |
TW200739652A (en) | Sample surface inspecting method and inspecting apparatus | |
US10883945B2 (en) | Simultaneous multi-elements analysis type X-ray fluorescence spectrometer, and simultaneous multi-elements X-ray fluorescence analyzing method | |
ATE492801T1 (de) | Vorrichtung und verfahren zur röntgenstrahlfluoreszenz-analyse einer mineralprobe | |
TW200943006A (en) | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method | |
MY142862A (en) | System for image inspection of movable object and dodging method | |
ES2527878T3 (es) | Aparato y método mejorados para la determinación de una composición objetivo | |
WO2017221246A8 (en) | An xrf analyzer for identifying a plurality of solid objects, a sorting system and a sorting method thereof | |
TW200609484A (en) | Determination of irradiation parameters for inspection of a surface | |
WO2011085255A3 (en) | Inspection guided overlay metrology | |
SG152147A1 (en) | Alignment method and apparatus, lithographic apparatus, metrology apparatus and device manufacturing method | |
JP2009058310A5 (zh) | ||
ATE438095T1 (de) | Vorrichtung zur röntgen-tomosynthese | |
SG157313A1 (en) | Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process | |
GB2488079A (en) | Time of flight backscatter imaging system | |
JP2009532894A5 (zh) | ||
TW200739058A (en) | Chamber particle detection system | |
ATE466278T1 (de) | Verfahren und system zur bestrahlung und inspektion flüssigkeitstragender behälter | |
WO2008093729A1 (ja) | 測定装置および測定方法 | |
TW200714894A (en) | Mask defect inspecting method, mask defect inspecting apparatus, and semiconductor device manufacturing method | |
JP6166032B2 (ja) | 半導体デバイス検査装置及び半導体デバイス検査方法 | |
WO2004068529A3 (en) | Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample | |
ATE358886T1 (de) | Elektronenstrahlvorrrichtung mit mehrfachstrahl | |
KR101480968B1 (ko) | X-선 ct 및 레이저 표면 검사를 이용하는 검사 장치 및 검사 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |