TW200738917A - Method of removing conductive metal oxide thin-film and apparatus therefor - Google Patents

Method of removing conductive metal oxide thin-film and apparatus therefor

Info

Publication number
TW200738917A
TW200738917A TW095136204A TW95136204A TW200738917A TW 200738917 A TW200738917 A TW 200738917A TW 095136204 A TW095136204 A TW 095136204A TW 95136204 A TW95136204 A TW 95136204A TW 200738917 A TW200738917 A TW 200738917A
Authority
TW
Taiwan
Prior art keywords
film
metal oxide
conductive metal
oxide thin
apparatus therefor
Prior art date
Application number
TW095136204A
Other languages
Chinese (zh)
Other versions
TWI316098B (en
Inventor
Hiroyuki Daiku
Tetsuya Inoue
Takanobu Sugimoto
Original Assignee
Hitachi Shipbuilding Eng Co
Taiwan Hitz Hi Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Shipbuilding Eng Co, Taiwan Hitz Hi Technology Corp filed Critical Hitachi Shipbuilding Eng Co
Publication of TW200738917A publication Critical patent/TW200738917A/en
Application granted granted Critical
Publication of TWI316098B publication Critical patent/TWI316098B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/04—Wires; Strips; Foils
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C03C2217/231—In2O3/SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Opposed to conductive metal oxide thin-film (12) lying on a surface of base material (11), positive electrode (13) and first negative electrode (14) are disposed in parallel in a noncontact state. Between the positive electrode (13) and the first negative electrode (14), there are disposed multiple second negative electrodes (17) arranged in a contact state in the direction of width of conductive metal oxide thin-film (12). While electrolytic solution (15) lies in the interspaces of conductive metal oxide thin-film (12) and electrodes (13), (14) and (17), relative displacement of the base material (11) is carried out so that the conductive metal oxide thin-film (12) first passes the negative electrodes (14) and (17) and thereafter passes the positive electrode (13). As a result, the conductive metal oxide thin-film (12) is removed by reduction reaction.
TW095136204A 2006-04-12 2006-09-29 Method of removing conductive metal oxide thin-film and apparatus therefor TW200738917A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006110170 2006-04-12

Publications (2)

Publication Number Publication Date
TW200738917A true TW200738917A (en) 2007-10-16
TWI316098B TWI316098B (en) 2009-10-21

Family

ID=38624676

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136204A TW200738917A (en) 2006-04-12 2006-09-29 Method of removing conductive metal oxide thin-film and apparatus therefor

Country Status (5)

Country Link
JP (1) JP5055269B2 (en)
KR (1) KR20090010980A (en)
CN (1) CN101416283B (en)
TW (1) TW200738917A (en)
WO (1) WO2007122752A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103046108B (en) * 2012-12-24 2017-03-29 上海申和热磁电子有限公司 Application of the electrolysis process in ito film is cleaned
KR101864368B1 (en) * 2016-08-19 2018-06-29 나노하 Apparatus for converting image to sound
KR102344878B1 (en) * 2017-07-10 2021-12-30 삼성디스플레이 주식회사 Cleaning apparatus for removing oxide and method of cleaning using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3353075B2 (en) * 1994-01-18 2002-12-03 西山ステンレスケミカル株式会社 Glass plate recycling method and apparatus
JP3659597B2 (en) * 1994-11-28 2005-06-15 旭電化工業株式会社 Method and apparatus for etching tin oxide film
FR2821862B1 (en) * 2001-03-07 2003-11-14 Saint Gobain METHOD OF ENGRAVING LAYERS DEPOSITED ON TRANSPARENT SUBSTRATES OF THE GLASS SUBSTRATE TYPE

Also Published As

Publication number Publication date
KR20090010980A (en) 2009-01-30
CN101416283B (en) 2010-05-19
WO2007122752A1 (en) 2007-11-01
JPWO2007122752A1 (en) 2009-08-27
JP5055269B2 (en) 2012-10-24
TWI316098B (en) 2009-10-21
CN101416283A (en) 2009-04-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees