TW200737202A - Flash memory array, flash memory cell therein, and method for programming and erasing the same - Google Patents

Flash memory array, flash memory cell therein, and method for programming and erasing the same

Info

Publication number
TW200737202A
TW200737202A TW095142387A TW95142387A TW200737202A TW 200737202 A TW200737202 A TW 200737202A TW 095142387 A TW095142387 A TW 095142387A TW 95142387 A TW95142387 A TW 95142387A TW 200737202 A TW200737202 A TW 200737202A
Authority
TW
Taiwan
Prior art keywords
flash memory
programming
potential
memory array
erasing
Prior art date
Application number
TW095142387A
Other languages
English (en)
Inventor
Emil Lambrache
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of TW200737202A publication Critical patent/TW200737202A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW095142387A 2005-11-21 2006-11-16 Flash memory array, flash memory cell therein, and method for programming and erasing the same TW200737202A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/285,089 US7339832B2 (en) 2005-11-21 2005-11-21 Array source line (AVSS) controlled high voltage regulation for programming flash or EE array

Publications (1)

Publication Number Publication Date
TW200737202A true TW200737202A (en) 2007-10-01

Family

ID=38053288

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142387A TW200737202A (en) 2005-11-21 2006-11-16 Flash memory array, flash memory cell therein, and method for programming and erasing the same

Country Status (7)

Country Link
US (2) US7339832B2 (zh)
EP (1) EP1964126A4 (zh)
JP (1) JP2009521775A (zh)
KR (1) KR20080077216A (zh)
CN (1) CN101461009A (zh)
TW (1) TW200737202A (zh)
WO (1) WO2007062378A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382309B (zh) * 2008-02-05 2013-01-11 Sony Corp 記錄裝置、記錄裝置之控制方法、記錄裝置之控制方法之程式及記錄著記錄裝置之控制方法之程式的記錄媒體

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WO2011096277A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8619489B2 (en) * 2010-04-30 2013-12-31 Stmicroelectronics S.R.L. Driving circuit for memory device
US8976594B2 (en) * 2012-05-15 2015-03-10 Micron Technology, Inc. Memory read apparatus and methods
US9064577B2 (en) 2012-12-06 2015-06-23 Micron Technology, Inc. Apparatuses and methods to control body potential in memory operations
US9047960B2 (en) * 2013-08-02 2015-06-02 Qualcomm Incorporated Flash memory cell with capacitive coupling between a metal floating gate and a metal control gate
KR20170030697A (ko) * 2015-09-09 2017-03-20 에스케이하이닉스 주식회사 균일한 프로그램 문턱전압값을 갖는 불휘발성 메모리장치 및 그 프로그램 방법
JP2018005961A (ja) * 2016-07-01 2018-01-11 東芝メモリ株式会社 記憶装置
US10825698B2 (en) 2017-06-15 2020-11-03 Samsung Electronics Co., Ltd. Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate
CN108227993B (zh) * 2018-01-04 2021-01-26 京东方科技集团股份有限公司 压电检测电路、阵列、触摸面板和方法
CN116453569B (zh) * 2023-06-09 2023-09-15 南京沁恒微电子股份有限公司 一种在系统可编程pd芯片及其编程方法

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EP0552531B1 (en) * 1992-01-22 2000-08-16 Macronix International Co., Ltd. Non-volatile memory cell and array architecture
DE69325443T2 (de) 1993-03-18 2000-01-27 St Microelectronics Srl Verfahren zur Vorspannung einer nichtflüchtigen Flash-EEPROM-Speicheranordnung
DE69428516T2 (de) 1994-03-28 2002-05-08 St Microelectronics Srl Flash-EEPROM-Speicher-Matrix und Verfahren zur Vorspannung
EP0758129B1 (en) 1995-08-02 2001-05-23 STMicroelectronics S.r.l. Flash EEPROM with integrated device for limiting the erase source voltage
TW367503B (en) * 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US5859796A (en) * 1997-12-16 1999-01-12 Advanced Micro Devices, Inc. Programming of memory cells using connected floating gate analog reference cell
US6212103B1 (en) 1999-07-28 2001-04-03 Xilinx, Inc. Method for operating flash memory
US6222771B1 (en) * 2000-01-31 2001-04-24 Eon Silicon Devices, Inc. Unified program method and circuitry in flash EEPROM
US6529421B1 (en) * 2001-08-28 2003-03-04 Micron Technology, Inc. SRAM array with temperature-compensated threshold voltage
EP1331644B1 (en) 2001-12-28 2007-03-14 STMicroelectronics S.r.l. Regulation method for the source voltage in a nonvolatile memory cell during programming and corresponding program circuit
US6570787B1 (en) * 2002-04-19 2003-05-27 Advanced Micro Devices, Inc. Programming with floating source for low power, low leakage and high density flash memory devices
US6781881B2 (en) 2002-12-19 2004-08-24 Taiwan Semiconductor Manufacturing Company Two-transistor flash cell for large endurance application
US7324374B2 (en) * 2003-06-20 2008-01-29 Spansion Llc Memory with a core-based virtual ground and dynamic reference sensing scheme
KR100505705B1 (ko) 2003-08-22 2005-08-03 삼성전자주식회사 플래쉬 메모리 셀의 안정적인 프로그래밍을 위한 프로그램전압 발생 회로 및 그 프로그래밍 방법
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382309B (zh) * 2008-02-05 2013-01-11 Sony Corp 記錄裝置、記錄裝置之控制方法、記錄裝置之控制方法之程式及記錄著記錄裝置之控制方法之程式的記錄媒體

Also Published As

Publication number Publication date
US7339832B2 (en) 2008-03-04
JP2009521775A (ja) 2009-06-04
EP1964126A2 (en) 2008-09-03
US7460411B2 (en) 2008-12-02
KR20080077216A (ko) 2008-08-21
EP1964126A4 (en) 2009-11-11
US20080106949A1 (en) 2008-05-08
CN101461009A (zh) 2009-06-17
WO2007062378A2 (en) 2007-05-31
US20070115728A1 (en) 2007-05-24
WO2007062378A3 (en) 2009-01-22

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