TW200735329A - Method for manufacturing nonvolatile semiconductor memory device comprising variable resistive element - Google Patents

Method for manufacturing nonvolatile semiconductor memory device comprising variable resistive element

Info

Publication number
TW200735329A
TW200735329A TW095141722A TW95141722A TW200735329A TW 200735329 A TW200735329 A TW 200735329A TW 095141722 A TW095141722 A TW 095141722A TW 95141722 A TW95141722 A TW 95141722A TW 200735329 A TW200735329 A TW 200735329A
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
manufacturing
variable resistor
Prior art date
Application number
TW095141722A
Other languages
Chinese (zh)
Inventor
Shinobu Yamazaki
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200735329A publication Critical patent/TW200735329A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention provides a method for manufacturing a nonvolatile semiconductor memory device that can suppress deviation of resistance value derived from difference in degree of crystallization of PCMO in variable resistors and can satisfactorily ensure a circuit operation margin. The semiconductor memory device is formed a variable resistor between upper and lower electrodes for storing information. The manufacturing method provides a variable resistor forming step of sputtering an electric conductive metal oxide in an oxygen free environment to form the variable resistor.
TW095141722A 2005-11-11 2006-11-10 Method for manufacturing nonvolatile semiconductor memory device comprising variable resistive element TW200735329A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005327982A JP4238248B2 (en) 2005-11-11 2005-11-11 Manufacturing method of nonvolatile semiconductor memory device provided with variable resistance element

Publications (1)

Publication Number Publication Date
TW200735329A true TW200735329A (en) 2007-09-16

Family

ID=38023078

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141722A TW200735329A (en) 2005-11-11 2006-11-10 Method for manufacturing nonvolatile semiconductor memory device comprising variable resistive element

Country Status (3)

Country Link
JP (1) JP4238248B2 (en)
TW (1) TW200735329A (en)
WO (1) WO2007055071A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473204B (en) * 2007-10-09 2015-02-11 Spansion Llc Method of fabricating semiconductor memory device having shallow trench isolation
TWI612698B (en) * 2013-10-09 2018-01-21 財團法人工業技術研究院 Non-volatile memory cell and non-volatile memory for multi-bit storage
CN112736198A (en) * 2020-12-31 2021-04-30 上海集成电路装备材料产业创新中心有限公司 Resistive random access memory and preparation method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5175525B2 (en) 2007-11-14 2013-04-03 株式会社東芝 Nonvolatile semiconductor memory device
WO2010103609A1 (en) 2009-03-09 2010-09-16 株式会社 東芝 Information recording/reproducing device
KR20140007493A (en) 2011-06-08 2014-01-17 가부시키가이샤 아루박 Method and device for producing variable resistance element
JP2013207130A (en) * 2012-03-29 2013-10-07 Ulvac Japan Ltd Resistance change element and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249992B2 (en) * 2002-12-04 2009-04-08 シャープ株式会社 Semiconductor memory device and memory cell writing and erasing method
JP2005123361A (en) * 2003-10-16 2005-05-12 Sony Corp Resistance change type nonvolatile memory and its manufacturing method, and method of forming resistance change layer
JP2005203463A (en) * 2004-01-14 2005-07-28 Sharp Corp Nonvolatile semiconductor memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473204B (en) * 2007-10-09 2015-02-11 Spansion Llc Method of fabricating semiconductor memory device having shallow trench isolation
TWI612698B (en) * 2013-10-09 2018-01-21 財團法人工業技術研究院 Non-volatile memory cell and non-volatile memory for multi-bit storage
CN112736198A (en) * 2020-12-31 2021-04-30 上海集成电路装备材料产业创新中心有限公司 Resistive random access memory and preparation method thereof

Also Published As

Publication number Publication date
JP2007134603A (en) 2007-05-31
JP4238248B2 (en) 2009-03-18
WO2007055071A1 (en) 2007-05-18

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