TW200731265A - Method and apparatus for programming/erasing a non-volatile memory - Google Patents

Method and apparatus for programming/erasing a non-volatile memory

Info

Publication number
TW200731265A
TW200731265A TW095131909A TW95131909A TW200731265A TW 200731265 A TW200731265 A TW 200731265A TW 095131909 A TW095131909 A TW 095131909A TW 95131909 A TW95131909 A TW 95131909A TW 200731265 A TW200731265 A TW 200731265A
Authority
TW
Taiwan
Prior art keywords
cells
endurance
data retention
erasing
erased
Prior art date
Application number
TW095131909A
Other languages
English (en)
Inventor
Martin L Niset
Andrew W Hardell
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200731265A publication Critical patent/TW200731265A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
TW095131909A 2005-09-07 2006-08-30 Method and apparatus for programming/erasing a non-volatile memory TW200731265A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/220,733 US7292473B2 (en) 2005-09-07 2005-09-07 Method and apparatus for programming/erasing a non-volatile memory

Publications (1)

Publication Number Publication Date
TW200731265A true TW200731265A (en) 2007-08-16

Family

ID=37829907

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131909A TW200731265A (en) 2005-09-07 2006-08-30 Method and apparatus for programming/erasing a non-volatile memory

Country Status (7)

Country Link
US (1) US7292473B2 (zh)
EP (1) EP1934985A4 (zh)
JP (1) JP2009507327A (zh)
KR (1) KR20080056156A (zh)
CN (1) CN101297372B (zh)
TW (1) TW200731265A (zh)
WO (1) WO2007030399A2 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7843730B2 (en) * 2008-01-16 2010-11-30 Freescale Semiconductor, Inc. Non-volatile memory with reduced charge fluence
US7949821B2 (en) 2008-06-12 2011-05-24 Micron Technology, Inc. Method of storing data on a flash memory device
US7764550B2 (en) * 2008-11-25 2010-07-27 Freescale Semiconductor, Inc. Method of programming a non-volatile memory
KR101026385B1 (ko) * 2009-01-06 2011-04-07 주식회사 하이닉스반도체 전하트랩형 플래시 메모리소자의 동작 방법
US9111629B2 (en) 2012-04-06 2015-08-18 Freescale Semiconductor, Inc. Smart charge pump configuration for non-volatile memories
FR2993089B1 (fr) * 2012-07-09 2014-07-18 Inside Secure Procede d'effacement ou de programmation d'une memoire factice protege contre la detection
US9236132B2 (en) 2013-06-04 2016-01-12 Apple Inc. Mitigating reliability degradation of analog memory cells during long static and erased state retention
US20170110194A1 (en) * 2015-10-19 2017-04-20 Silicon Storage Technology, Inc. Power Driven Optimization For Flash Memory
US11301346B2 (en) * 2020-08-27 2022-04-12 Micron Technology, Inc. Separate trims for buffer and snapshot

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3205476A1 (de) * 1982-02-16 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers
US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JPH0589686A (ja) * 1991-09-27 1993-04-09 Citizen Watch Co Ltd 半導体不揮発性メモリとその書き込み方法
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US6088264A (en) * 1998-01-05 2000-07-11 Intel Corporation Flash memory partitioning for read-while-write operation
JP2000268593A (ja) * 1999-03-18 2000-09-29 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ
JP2003257187A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 不揮発性メモリ、ｉｃカード及びデータ処理装置
JP4372406B2 (ja) * 2002-11-11 2009-11-25 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
KR100963855B1 (ko) * 2003-07-30 2010-06-16 샌디스크 아이엘 엘티디 불휘발성 메모리 디바이스에서 프로그래밍 데이터의 신뢰성및 성능을 최적화하는 방법 및 시스템
US7120063B1 (en) * 2004-05-07 2006-10-10 Spansion Llc Flash memory cell and methods for programming and erasing

Also Published As

Publication number Publication date
KR20080056156A (ko) 2008-06-20
JP2009507327A (ja) 2009-02-19
US20070053222A1 (en) 2007-03-08
EP1934985A4 (en) 2009-05-20
CN101297372B (zh) 2012-10-10
CN101297372A (zh) 2008-10-29
WO2007030399A3 (en) 2008-01-31
EP1934985A2 (en) 2008-06-25
US7292473B2 (en) 2007-11-06
WO2007030399A2 (en) 2007-03-15

Similar Documents

Publication Publication Date Title
TW200731265A (en) Method and apparatus for programming/erasing a non-volatile memory
CN101807432B (zh) 用于操作闪存器件的方法
WO2010117807A3 (en) Two pass erase for non-volatile storage
TW200703342A (en) Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
US20090034339A1 (en) Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
US7924610B2 (en) Method for conducting over-erase correction
EP1686592A3 (en) Partial erase verify
TW200519949A (en) Memory device and method using positive gate stress to recover overerased cell
US8274840B2 (en) Nonvolatile memory devices having built-in memory cell recovery during block erase and methods of operating same
CN1791941A (zh) 适用于低电压非易失性存储器的读取及擦除验证方法及电路
EP1227501A3 (en) Programming and erasing methods for an NROM array
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device
TW200609946A (en) Flash memory device and method of erasing flash memory cell thereof
KR960006084A (ko) 불휘발성 반도체 기억장치와 그 소거방법
US7885107B2 (en) Methods of programming non-volatile memory cells
TW200615949A (en) Variable programming of non-volatile memory
ATE387715T1 (de) Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken
US8351276B2 (en) Soft program of a non-volatile memory block
TW200707189A (en) Memory block erasing in a flash memory device
US8064267B2 (en) Erase voltage reduction in a non-volatile memory device
TW200519951A (en) Nonvolatile semiconductor memory
EP0883133A3 (en) Non-volatile semiconductor
TW200625315A (en) Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device
US20170110194A1 (en) Power Driven Optimization For Flash Memory
TW201432700A (zh) 用於非揮發性記憶體之快速安全抹除方案