TW200729474A - Solid-state image capturing device, method for manufacturing the same and electronic information device - Google Patents

Solid-state image capturing device, method for manufacturing the same and electronic information device

Info

Publication number
TW200729474A
TW200729474A TW095134671A TW95134671A TW200729474A TW 200729474 A TW200729474 A TW 200729474A TW 095134671 A TW095134671 A TW 095134671A TW 95134671 A TW95134671 A TW 95134671A TW 200729474 A TW200729474 A TW 200729474A
Authority
TW
Taiwan
Prior art keywords
image capturing
capturing area
light receiving
solid
metal wiring
Prior art date
Application number
TW095134671A
Other languages
English (en)
Other versions
TWI308796B (zh
Inventor
Tomohiro Konishi
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200729474A publication Critical patent/TW200729474A/zh
Application granted granted Critical
Publication of TWI308796B publication Critical patent/TWI308796B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095134671A 2005-09-30 2006-09-19 Solid-state image capturing device, method for manufacturing the same and electronic information device TW200729474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005288719A JP2007103483A (ja) 2005-09-30 2005-09-30 固体撮像装置およびその製造方法、電子情報機器

Publications (2)

Publication Number Publication Date
TW200729474A true TW200729474A (en) 2007-08-01
TWI308796B TWI308796B (zh) 2009-04-11

Family

ID=37906060

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134671A TW200729474A (en) 2005-09-30 2006-09-19 Solid-state image capturing device, method for manufacturing the same and electronic information device

Country Status (6)

Country Link
US (1) US20100020215A1 (zh)
JP (1) JP2007103483A (zh)
KR (1) KR20080038255A (zh)
CN (1) CN101278399B (zh)
TW (1) TW200729474A (zh)
WO (1) WO2007040016A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417566B (zh) * 2009-01-29 2013-12-01 Visera Technologies Co Ltd 畫素陣列上的微透鏡陣列設計方法及影像感測裝置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5493448B2 (ja) * 2009-04-21 2014-05-14 ソニー株式会社 固体撮像装置および撮像装置
JP2015109314A (ja) * 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
CN104183612B (zh) * 2014-08-01 2018-05-01 上海集成电路研发中心有限公司 一种光路倾斜的cmos图像传感器的像素阵列
CN105720068B (zh) * 2016-05-03 2019-03-05 合肥芯福传感器技术有限公司 基于内向s型导线的多层结构像元及图像传感器
CN110349984B (zh) * 2018-04-01 2021-08-03 广州印芯半导体技术有限公司 具有光学结构的集成电路
US10529763B2 (en) * 2018-04-19 2020-01-07 Semiconductor Components Industries, Llc Imaging pixels with microlenses
JP2020113573A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 光電変換装置
CN111680630B (zh) * 2020-06-09 2023-10-24 京东方科技集团股份有限公司 指纹识别组件和显示基板
CN116134619A (zh) 2020-07-30 2023-05-16 松下知识产权经营株式会社 光检测器、固体摄像元件、以及光检测器的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853562B2 (ja) * 2000-02-23 2006-12-06 松下電器産業株式会社 増幅型固体撮像装置
JP4551603B2 (ja) * 2002-03-11 2010-09-29 ソニー株式会社 固体撮像素子及びその製造方法
JP4221940B2 (ja) * 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
JP3709873B2 (ja) * 2003-02-19 2005-10-26 ソニー株式会社 固体撮像装置及び撮像カメラ
JP2006059847A (ja) * 2004-08-17 2006-03-02 Sony Corp 固体撮像装置
JP2006173314A (ja) * 2004-12-15 2006-06-29 Matsushita Electric Ind Co Ltd 固体撮像装置およびマスク描画方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417566B (zh) * 2009-01-29 2013-12-01 Visera Technologies Co Ltd 畫素陣列上的微透鏡陣列設計方法及影像感測裝置

Also Published As

Publication number Publication date
WO2007040016A1 (ja) 2007-04-12
US20100020215A1 (en) 2010-01-28
CN101278399A (zh) 2008-10-01
KR20080038255A (ko) 2008-05-02
TWI308796B (zh) 2009-04-11
JP2007103483A (ja) 2007-04-19
CN101278399B (zh) 2010-09-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees