TW200728939A - Thinner composition for removing photoresist - Google Patents

Thinner composition for removing photoresist

Info

Publication number
TW200728939A
TW200728939A TW095141773A TW95141773A TW200728939A TW 200728939 A TW200728939 A TW 200728939A TW 095141773 A TW095141773 A TW 095141773A TW 95141773 A TW95141773 A TW 95141773A TW 200728939 A TW200728939 A TW 200728939A
Authority
TW
Taiwan
Prior art keywords
thinner composition
photoresist
removing photoresist
liquid crystal
crystal displays
Prior art date
Application number
TW095141773A
Other languages
English (en)
Inventor
Hee-Jin Park
Sung-Gun Shin
Suk-Il Yoon
Byung-Uk Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200728939A publication Critical patent/TW200728939A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
TW095141773A 2005-11-18 2006-11-10 Thinner composition for removing photoresist TW200728939A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050110764A KR20070052943A (ko) 2005-11-18 2005-11-18 포토레지스트 제거용 씬너 조성물

Publications (1)

Publication Number Publication Date
TW200728939A true TW200728939A (en) 2007-08-01

Family

ID=38048803

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141773A TW200728939A (en) 2005-11-18 2006-11-10 Thinner composition for removing photoresist

Country Status (4)

Country Link
KR (1) KR20070052943A (zh)
CN (1) CN101300529A (zh)
TW (1) TW200728939A (zh)
WO (1) WO2007058443A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI467349B (zh) * 2008-11-19 2015-01-01 Toagosei Co Ltd 具有經圖案化的導電性高分子膜之基板的製造方法及具有經圖案化的導電性高分子膜之基板

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120108067A1 (en) * 2010-10-29 2012-05-03 Neisser Mark O Edge Bead Remover For Coatings
CN103050394B (zh) * 2011-10-13 2015-10-14 上海华虹宏力半导体制造有限公司 超厚光刻胶的刻蚀方法
KR20140101156A (ko) * 2013-02-08 2014-08-19 주식회사 동진쎄미켐 신너 조성물 및 이의 용도
KR102128374B1 (ko) * 2014-01-23 2020-07-01 동우 화인켐 주식회사 레지스트 도포성 개선용 및 제거용 신너 조성물
JP6899220B2 (ja) * 2017-01-11 2021-07-07 株式会社ダイセル レジスト除去用組成物
JP2024503164A (ja) * 2020-08-11 2024-01-25 株式会社レゾナック 溶剤組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721638B2 (ja) * 1986-07-18 1995-03-08 東京応化工業株式会社 基板の処理方法
JP2001188358A (ja) * 1999-12-28 2001-07-10 Mitsubishi Gas Chem Co Inc エッジビードリムーバ
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US20050032657A1 (en) * 2003-08-06 2005-02-10 Kane Sean Michael Stripping and cleaning compositions for microelectronics
KR101213144B1 (ko) * 2003-10-20 2012-12-17 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI467349B (zh) * 2008-11-19 2015-01-01 Toagosei Co Ltd 具有經圖案化的導電性高分子膜之基板的製造方法及具有經圖案化的導電性高分子膜之基板

Also Published As

Publication number Publication date
KR20070052943A (ko) 2007-05-23
CN101300529A (zh) 2008-11-05
WO2007058443A1 (en) 2007-05-24

Similar Documents

Publication Publication Date Title
TW200728939A (en) Thinner composition for removing photoresist
TW200739700A (en) Etchant and method for fabricating liquid crystal display using the same
ATE521993T1 (de) Ätzen von substraten für lichtemittierende bauelemente
TW200630748A (en) Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel
GT200800238A (es) Jeringa con conducto rebajado para usarla con accesoriios frontales
ATE405622T1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
TW200628978A (en) Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel
TW200702427A (en) Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant
TW200708181A (en) Organic electroluminescent display panel and fabricatiing method thereof
AR054533A1 (es) Proceso y reactivo magnetico para la separacion de impurezas de los minerales
TW200710478A (en) Flat display device
PL1727850T3 (pl) Kompozycje zawierające alkoksylany alkoholi i ich zastosowanie
WO2006099380A3 (en) Photoimageable, thermosettable fluorinated resists
ATE345375T1 (de) Fluorhaltige tenside für gepufferte säureätzlösungen
TW200634134A (en) Etching liquid composition
TW200727493A (en) Display device and manufacturing method of display device
AR049587A1 (es) Compuesto de hidroxilo fosfatado, su uso como hidrotropo y composicion de limpieza que contiene el compuesto fosfatado
TW200702945A (en) Thinner composition for removing photoresist
TW200632078A (en) Liquid crystal composition comprising novel silicon containing compounds and liquid crystal display device using the same
TW200632547A (en) Photosensitive resin composition, thin film panel including a layer made from photosensitive resin composition, and method for manufacturing thin film panel
TW200627062A (en) Photoresist compositions
TW200715305A (en) Method for manufacturing a conductive composition and a rear substrate of a plasma display
TW200726732A (en) Sintered body of oxides and the manufacturing method of the same, sputtering target and transparent electroconductive film
TW200629010A (en) Photoresist strip using solvent vapor
TW200639240A (en) Trifluoronaphthalene derivative and liquid crystal composition comprising the same