TW200728934A - Device manufacturing method and computer-readable medium - Google Patents

Device manufacturing method and computer-readable medium

Info

Publication number
TW200728934A
TW200728934A TW095145896A TW95145896A TW200728934A TW 200728934 A TW200728934 A TW 200728934A TW 095145896 A TW095145896 A TW 095145896A TW 95145896 A TW95145896 A TW 95145896A TW 200728934 A TW200728934 A TW 200728934A
Authority
TW
Taiwan
Prior art keywords
computer
readable medium
device manufacturing
exposure
features
Prior art date
Application number
TW095145896A
Other languages
English (en)
Inventor
Leonardus Henricus Marie Verstappen
Everhardus Cornelis Mos
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200728934A publication Critical patent/TW200728934A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
TW095145896A 2005-12-21 2006-12-08 Device manufacturing method and computer-readable medium TW200728934A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/312,650 US7547495B2 (en) 2005-12-21 2005-12-21 Device manufacturing method and computer program product

Publications (1)

Publication Number Publication Date
TW200728934A true TW200728934A (en) 2007-08-01

Family

ID=37745947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145896A TW200728934A (en) 2005-12-21 2006-12-08 Device manufacturing method and computer-readable medium

Country Status (7)

Country Link
US (1) US7547495B2 (zh)
EP (1) EP1801657A1 (zh)
JP (1) JP4567658B2 (zh)
KR (1) KR100832078B1 (zh)
CN (1) CN1987658A (zh)
SG (1) SG133551A1 (zh)
TW (1) TW200728934A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7917244B2 (en) * 2007-03-14 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing critical dimension side-to-side tilting error
US7869022B2 (en) * 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
JP5192795B2 (ja) * 2007-12-06 2013-05-08 株式会社日立ハイテクノロジーズ 電子ビーム測定装置
US8612045B2 (en) * 2008-12-24 2013-12-17 Asml Holding N.V. Optimization method and a lithographic cell

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136033A (ja) * 1991-11-13 1993-06-01 Hitachi Ltd パターン形成方法及びその装置
JPH05243115A (ja) * 1992-01-22 1993-09-21 Nec Corp 半導体装置の製造方法
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
JP2001060546A (ja) 1999-08-20 2001-03-06 Nikon Corp 露光方法及び露光装置
US6451508B1 (en) * 2000-04-28 2002-09-17 International Business Machines Corporation Plural interleaved exposure process for increased feature aspect ratio in dense arrays
US6625512B1 (en) 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
US6589713B1 (en) 2001-01-29 2003-07-08 Advanced Micro Devices, Inc. Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits
US6479200B1 (en) 2001-04-19 2002-11-12 Advanced Micro Devices, Inc. Method of controlling stepper process parameters based upon scatterometric measurements of DICD features
EP1385052B1 (en) * 2002-07-26 2006-05-31 ASML MaskTools B.V. Orientation dependent shielding for use with dipole illumination techniques
US6912438B2 (en) 2002-10-21 2005-06-28 Advanced Micro Devices, Inc. Using scatterometry to obtain measurements of in circuit structures
JP2004153120A (ja) * 2002-10-31 2004-05-27 Canon Inc 転写露光方法
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination

Also Published As

Publication number Publication date
KR100832078B1 (ko) 2008-05-27
US7547495B2 (en) 2009-06-16
JP2007173807A (ja) 2007-07-05
EP1801657A1 (en) 2007-06-27
CN1987658A (zh) 2007-06-27
SG133551A1 (en) 2007-07-30
US20070141486A1 (en) 2007-06-21
KR20070067623A (ko) 2007-06-28
JP4567658B2 (ja) 2010-10-20

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