TW200728902A - Method of forming patterns, program for forming patterns, and manufacturing method of semiconductor device - Google Patents

Method of forming patterns, program for forming patterns, and manufacturing method of semiconductor device

Info

Publication number
TW200728902A
TW200728902A TW095132752A TW95132752A TW200728902A TW 200728902 A TW200728902 A TW 200728902A TW 095132752 A TW095132752 A TW 095132752A TW 95132752 A TW95132752 A TW 95132752A TW 200728902 A TW200728902 A TW 200728902A
Authority
TW
Taiwan
Prior art keywords
forming patterns
semiconductor device
pattern
program
manufacturing
Prior art date
Application number
TW095132752A
Other languages
English (en)
Inventor
Toshiya Kotani
Hirotaka Ichikawa
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200728902A publication Critical patent/TW200728902A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW095132752A 2005-09-16 2006-09-05 Method of forming patterns, program for forming patterns, and manufacturing method of semiconductor device TW200728902A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005271098A JP2007079517A (ja) 2005-09-16 2005-09-16 パターン作成方法、パターン作成プログラム及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200728902A true TW200728902A (en) 2007-08-01

Family

ID=37884729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132752A TW200728902A (en) 2005-09-16 2006-09-05 Method of forming patterns, program for forming patterns, and manufacturing method of semiconductor device

Country Status (3)

Country Link
US (1) US7614026B2 (zh)
JP (1) JP2007079517A (zh)
TW (1) TW200728902A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5024141B2 (ja) * 2008-03-21 2012-09-12 富士通セミコンダクター株式会社 パターンデータの作成方法、そのパターンデータを作成するプログラム、及び、そのプログラムを含む媒体
JP6338368B2 (ja) * 2013-12-25 2018-06-06 キヤノン株式会社 パターンの光学像の評価方法
US10133803B2 (en) * 2015-06-08 2018-11-20 Mentor Graphics Corporation Coverage data interchange
US11842194B2 (en) * 2017-10-25 2023-12-12 Nicor, Inc. Methods and systems for a user interface for illumination power, management, and control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562975B2 (ja) 1998-09-29 2004-09-08 株式会社東芝 集積回路設計方法及び集積回路設計装置
US6374396B1 (en) 1998-12-04 2002-04-16 Micron Technology, Inc. Correction of field effects in photolithography
US7796801B2 (en) * 1999-08-26 2010-09-14 Nanogeometry Research Inc. Pattern inspection apparatus and method
US6868175B1 (en) 1999-08-26 2005-03-15 Nanogeometry Research Pattern inspection apparatus, pattern inspection method, and recording medium
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2002055431A (ja) * 2000-08-08 2002-02-20 Hitachi Ltd マスクデータパターン生成方法
AU2001292355A1 (en) 2000-10-05 2002-04-15 Nikon Corporation Method of determining exposure conditions, exposure method, device producing method and recording medium
JP4187947B2 (ja) * 2001-04-26 2008-11-26 株式会社東芝 パターン補正方法、パターン補正装置、およびパターン補正プログラムを記録した記録媒体
JP2004333529A (ja) * 2003-04-30 2004-11-25 Sony Corp 露光マスクの作製方法
JP4177722B2 (ja) 2003-07-02 2008-11-05 株式会社東芝 パターン補正方法、パターン補正システム、マスク製造方法、半導体装置製造方法、及びパターン補正プログラム
JP2005156606A (ja) * 2003-11-20 2005-06-16 Toshiba Microelectronics Corp 光近接効果補正の方法
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
US7401319B2 (en) * 2004-12-23 2008-07-15 Invarium, Inc. Method and system for reticle-wide hierarchy management for representational and computational reuse in integrated circuit layout design

Also Published As

Publication number Publication date
US7614026B2 (en) 2009-11-03
JP2007079517A (ja) 2007-03-29
US20070066025A1 (en) 2007-03-22

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