AU2001292355A1 - Method of determining exposure conditions, exposure method, device producing method and recording medium - Google Patents

Method of determining exposure conditions, exposure method, device producing method and recording medium

Info

Publication number
AU2001292355A1
AU2001292355A1 AU2001292355A AU9235501A AU2001292355A1 AU 2001292355 A1 AU2001292355 A1 AU 2001292355A1 AU 2001292355 A AU2001292355 A AU 2001292355A AU 9235501 A AU9235501 A AU 9235501A AU 2001292355 A1 AU2001292355 A1 AU 2001292355A1
Authority
AU
Australia
Prior art keywords
exposure
recording medium
device producing
determining
exposure conditions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001292355A
Inventor
Takashi Mikuchi
Kazuyuki Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of AU2001292355A1 publication Critical patent/AU2001292355A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2001292355A 2000-10-05 2001-10-04 Method of determining exposure conditions, exposure method, device producing method and recording medium Abandoned AU2001292355A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000306612 2000-10-05
JP2000-306612 2000-10-05
PCT/JP2001/008765 WO2002029870A1 (en) 2000-10-05 2001-10-04 Method of determining exposure conditions, exposure method, device producing method and recording medium

Publications (1)

Publication Number Publication Date
AU2001292355A1 true AU2001292355A1 (en) 2002-04-15

Family

ID=18787272

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001292355A Abandoned AU2001292355A1 (en) 2000-10-05 2001-10-04 Method of determining exposure conditions, exposure method, device producing method and recording medium

Country Status (4)

Country Link
US (1) US6706456B2 (en)
JP (1) JPWO2002029870A1 (en)
AU (1) AU2001292355A1 (en)
WO (1) WO2002029870A1 (en)

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US7127098B2 (en) * 2001-09-13 2006-10-24 Hitachi, Ltd. Image detection method and its apparatus and defect detection method and its apparatus
US6721939B2 (en) * 2002-02-19 2004-04-13 Taiwan Semiconductor Manufacturing Co., Ltd Electron beam shot linearity monitoring
JP2006503419A (en) * 2002-10-11 2006-01-26 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Irradiation device for inspecting an object covered with a photosensitive resist
JP4786224B2 (en) * 2005-03-30 2011-10-05 富士フイルム株式会社 Projection head focus position measuring method and exposure method
US7968258B2 (en) * 2005-05-16 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
US8219940B2 (en) * 2005-07-06 2012-07-10 Semiconductor Insights Inc. Method and apparatus for removing dummy features from a data structure
US7566517B1 (en) * 2005-07-12 2009-07-28 Kla-Tencor Technologies Corp. Feature printability optimization by optical tool
FR2890461B1 (en) * 2005-09-05 2008-12-26 Sagem Defense Securite SHUTTER AND ILLUMINATOR OF A PHOTOLITHOGRAPHY DEVICE
JP2007079517A (en) * 2005-09-16 2007-03-29 Toshiba Corp Method for forming pattern, program for forming pattern, and method for manufacturing semiconductor device
JPWO2007043535A1 (en) * 2005-10-07 2009-04-16 株式会社ニコン Optical characteristic measuring method, exposure method, device manufacturing method, inspection apparatus and measuring method
CN101405836B (en) * 2006-03-06 2010-09-08 株式会社拓普康 Manufacturing method of semiconductor device
US7583359B2 (en) * 2006-05-05 2009-09-01 Asml Netherlands B.V. Reduction of fit error due to non-uniform sample distribution
JP2007317960A (en) 2006-05-26 2007-12-06 Canon Inc Method and apparadut for detecting exposure condition, and aligner
US7948616B2 (en) * 2007-04-12 2011-05-24 Nikon Corporation Measurement method, exposure method and device manufacturing method
US7889318B2 (en) * 2007-09-19 2011-02-15 Asml Netherlands B.V. Methods of characterizing similarity between measurements on entities, computer programs product and data carrier
US7916275B2 (en) * 2007-09-19 2011-03-29 Asml Netherlands B.V. Methods of characterizing similarity or consistency in a set of entities
US20090263015A1 (en) * 2008-04-17 2009-10-22 Guoyi Fu Method And Apparatus For Correcting Underexposed Digital Images
JP2009267249A (en) * 2008-04-28 2009-11-12 Oki Semiconductor Co Ltd Method for detecting exposure boundary position and method for manufacturing semiconductor device
KR20100003643A (en) * 2008-07-01 2010-01-11 삼성전자주식회사 The method of measuring dimension of patterns and the record medium recording the program implementing the same
US8289400B2 (en) * 2009-06-05 2012-10-16 Apple Inc. Image capturing device having continuous image capture
JP5358482B2 (en) * 2010-02-24 2013-12-04 株式会社ルネサスエスピードライバ Display drive circuit
JP5574749B2 (en) * 2010-02-24 2014-08-20 キヤノン株式会社 Determination method and program for determining at least one of exposure condition and mask pattern, and information processing apparatus
CN102884609B (en) 2010-04-30 2016-04-13 株式会社尼康 Testing fixture and inspection method
CN103283002B (en) 2010-10-26 2016-06-15 株式会社尼康 The manufacture method of inspection units, inspection method, exposure method and semiconductor element
JP2014055789A (en) * 2012-09-11 2014-03-27 Nuflare Technology Inc Pattern evaluation method, and pattern evaluation device
FR2996015B1 (en) * 2012-09-25 2014-09-12 Sagem Defense Securite PHOTOLITHOGRAPHIC DEVICE ILLUMINATOR PERMITTING CONTROLLED DIFFRACTION
KR102154075B1 (en) * 2013-10-21 2020-09-09 삼성전자주식회사 Methods of inspecting a semiconductor device and semiconductor inspection systems
WO2017102336A1 (en) * 2015-12-18 2017-06-22 Asml Netherlands B.V. Improvements in gauge pattern selection
US10748821B2 (en) 2017-04-26 2020-08-18 Samsung Electronics Co., Ltd. Method and system for measuring pattern placement error on a wafer
JP2019101326A (en) * 2017-12-06 2019-06-24 株式会社リコー Image forming apparatus and image forming method
JP7105582B2 (en) * 2018-03-09 2022-07-25 キヤノン株式会社 Determination method, exposure method, exposure apparatus, article manufacturing method and program
US10509328B2 (en) 2018-04-27 2019-12-17 Applied Materials, Inc. Fabrication and use of dose maps and feature size maps during substrate processing
CN113639630A (en) * 2021-04-01 2021-11-12 浙江大学台州研究院 Dimension measuring instrument system based on multi-template matching and automatic focusing functions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118194A (en) 1997-04-25 1999-01-12 Nikon Corp Exposure condition measuring method, and evaluation method and lithography system for projection optical system
JPH11233434A (en) * 1998-02-17 1999-08-27 Nikon Corp Exposure condition determining method, exposure method, aligner, and manufacture of device
JPH11325870A (en) * 1998-05-12 1999-11-26 Matsushita Electron Corp Focus position measurement method
JP2000124103A (en) * 1998-10-16 2000-04-28 Sony Corp Exposure method and aligner

Also Published As

Publication number Publication date
JPWO2002029870A1 (en) 2004-02-19
WO2002029870A1 (en) 2002-04-11
US20030170552A1 (en) 2003-09-11
US6706456B2 (en) 2004-03-16

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