TW200727504A - Solar cell element and method for fabricating same - Google Patents

Solar cell element and method for fabricating same

Info

Publication number
TW200727504A
TW200727504A TW095118628A TW95118628A TW200727504A TW 200727504 A TW200727504 A TW 200727504A TW 095118628 A TW095118628 A TW 095118628A TW 95118628 A TW95118628 A TW 95118628A TW 200727504 A TW200727504 A TW 200727504A
Authority
TW
Taiwan
Prior art keywords
rear surface
surface electrode
solar cell
surface side
semiconductor substrate
Prior art date
Application number
TW095118628A
Other languages
Chinese (zh)
Inventor
Tsutomu Onishi
Takeshi Akatsuka
Shunichi Igarashi
Original Assignee
Naoetsu Electronics Co Ltd
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd, Shinetsu Chemical Co filed Critical Naoetsu Electronics Co Ltd
Publication of TW200727504A publication Critical patent/TW200727504A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

A solar cell element realizing BSF effect and passivation effect through a simple structure. Since the rear surface side of a semiconductor substrate (1) is covered entirely with a BSF layer (2), only a part of the BSF layer (2) on the rear surface side is brought into contact with a first rear surface electrode (4), and a great part on the rear surface side is covered with a passivation film (3) excepting these contact portions (4a), surface recombination loss is reduced in the great part of the semiconductor substrate (1) on the rear surface side and the performance of a solar cell is enhanced. Furthermore, when the rear surface side of the passivation film is covered with a second rear surface electrode (5) having a resistance lower than that of the first rear surface electrode (4) and the first rear surface electrode (4) is brought into contact with the second rear surface electrode (5), power loss due to resistance at the second rear surface electrode (5) having a resistance lower than that of the first rear surface electrode (4) is reduced, and the light of long wavelength arriving at the rear surface from the front surface is reflected on the second rear surface electrode (5) toward the inside of the semiconductor substrate (1) thus enhancing power generation effect.
TW095118628A 2005-05-31 2006-05-25 Solar cell element and method for fabricating same TW200727504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005159509A JP2008204967A (en) 2005-05-31 2005-05-31 Solar cell element and method for fabricating the same

Publications (1)

Publication Number Publication Date
TW200727504A true TW200727504A (en) 2007-07-16

Family

ID=37481376

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118628A TW200727504A (en) 2005-05-31 2006-05-25 Solar cell element and method for fabricating same

Country Status (3)

Country Link
JP (1) JP2008204967A (en)
TW (1) TW200727504A (en)
WO (1) WO2006129444A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493605B (en) * 2008-06-11 2015-07-21 Ind Tech Res Inst Fabricating method of backside electrode layer

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US8569100B2 (en) 2008-06-26 2013-10-29 Mitsubishi Electric Corporation Solar cell and manufacturing method thereof
WO2010119512A1 (en) * 2009-04-14 2010-10-21 三菱電機株式会社 Photovoltaic device and method for manufacturing the same
WO2010150358A1 (en) * 2009-06-23 2010-12-29 三菱電機株式会社 Photoelectromotive device, and method for manufacturing the same
KR20120067361A (en) * 2009-09-18 2012-06-25 어플라이드 머티어리얼스, 인코포레이티드 Threshold adjustment implants for reducing surface recombination in solar cells
KR102017558B1 (en) 2009-09-18 2019-09-03 신에쓰 가가꾸 고교 가부시끼가이샤 Solar cell, method for manufacturing solar cell, and solar cell module
JP5377226B2 (en) * 2009-10-29 2013-12-25 三菱電機株式会社 Solar cell and manufacturing method thereof
US20130133741A1 (en) * 2010-10-05 2013-05-30 Mitsubishi Electric Corporation Photovoltaic device and manufacturing method thereof
JP5626361B2 (en) 2010-12-06 2014-11-19 信越化学工業株式会社 SOLAR CELL, SOLAR CELL MODULE, AND SOLAR CELL MANUFACTURING METHOD
KR101917879B1 (en) * 2010-12-06 2018-11-13 신에쓰 가가꾸 고교 가부시끼가이샤 Solar cell and solar-cell module
JP5681607B2 (en) * 2011-03-28 2015-03-11 株式会社東芝 Photoelectric conversion element
JP5645734B2 (en) * 2011-03-31 2014-12-24 京セラ株式会社 Solar cell element
KR101860919B1 (en) * 2011-12-16 2018-06-29 엘지전자 주식회사 Solar cell and method for manufacturing the same
KR101921738B1 (en) 2012-06-26 2018-11-23 엘지전자 주식회사 Solar cell
JP2014017366A (en) * 2012-07-09 2014-01-30 Sharp Corp Thin film compound solar battery cell and manufacturing method of the same
JP2014154656A (en) * 2013-02-07 2014-08-25 Dainippon Screen Mfg Co Ltd Crystalline silicon solar cell, and manufacturing method thereof
JP6076814B2 (en) * 2013-04-19 2017-02-08 信越化学工業株式会社 Manufacturing method of solar cell
JP6356855B2 (en) * 2017-03-16 2018-07-11 信越化学工業株式会社 Manufacturing method of solar cell

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JPS59117276A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of solar battery
JPH0334583A (en) * 1989-06-30 1991-02-14 Sharp Corp Semiconductor device
JPH03263877A (en) * 1990-03-13 1991-11-25 Sharp Corp Formation of electrode of solar cell
JPH0595127A (en) * 1991-10-02 1993-04-16 Sharp Corp Manufacture of photoelectric conversion device
JP2931498B2 (en) * 1993-04-21 1999-08-09 シャープ株式会社 Solar cell and method of manufacturing the same
JP3193287B2 (en) * 1996-02-28 2001-07-30 シャープ株式会社 Solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493605B (en) * 2008-06-11 2015-07-21 Ind Tech Res Inst Fabricating method of backside electrode layer

Also Published As

Publication number Publication date
WO2006129444A1 (en) 2006-12-07
JP2008204967A (en) 2008-09-04

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