JP2001257374A5 - - Google Patents

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Publication number
JP2001257374A5
JP2001257374A5 JP2000114399A JP2000114399A JP2001257374A5 JP 2001257374 A5 JP2001257374 A5 JP 2001257374A5 JP 2000114399 A JP2000114399 A JP 2000114399A JP 2000114399 A JP2000114399 A JP 2000114399A JP 2001257374 A5 JP2001257374 A5 JP 2001257374A5
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JP
Japan
Prior art keywords
layer formed
layer
solar cell
type semiconductor
electrode layer
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JP2000114399A
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Japanese (ja)
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JP4257443B2 (en
JP2001257374A (en
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Priority to JP2000114399A priority Critical patent/JP4257443B2/en
Priority claimed from JP2000114399A external-priority patent/JP4257443B2/en
Publication of JP2001257374A publication Critical patent/JP2001257374A/en
Publication of JP2001257374A5 publication Critical patent/JP2001257374A5/ja
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Publication of JP4257443B2 publication Critical patent/JP4257443B2/en
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Expired - Fee Related legal-status Critical Current

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Claims (3)

表面に電気絶縁層が形成されたカーボンフィルム基板と、前記電気絶縁層上に形成された下部電極層と、その下部電極層上に形成されたｐ型のＣＩＳ系の光吸収層と、その光吸収層上に形成されたｎ型半導体層と、そのｎ型半導体層上に形成さ胆た上部透明電極層とをそなえたことを特徴とする太陽電池。 A carbon film substrate having an electric insulating layer formed on the surface thereof, a lower electrode layer formed on the electric insulating layer, a p-type CIS light absorbing layer formed on the lower electrode layer, A solar cell comprising: an n-type semiconductor layer formed on an absorption layer; and a bold upper transparent electrode layer formed on the n-type semiconductor layer . ｎ型半導体層と上部透明電極層との間に、高抵抗層が設けられていることを特徴とする請求項１の記載による太陽電池。 The solar cell according to claim 1 , wherein a high resistance layer is provided between the n-type semiconductor layer and the upper transparent electrode layer . カーボンフィルム基板は、フィルム状に加工されたポリカルボジイミドを焼成することにより得られたものであることを特徴とする請求項１の記載による太陽電池。The solar cell according to claim 1, wherein the carbon film substrate is obtained by firing polycarbodiimide processed into a film.
JP2000114399A 2000-03-10 2000-03-10 Solar cell and method for manufacturing the same Expired - Fee Related JP4257443B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000114399A JP4257443B2 (en) 2000-03-10 2000-03-10 Solar cell and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000114399A JP4257443B2 (en) 2000-03-10 2000-03-10 Solar cell and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2001257374A JP2001257374A (en) 2001-09-21
JP2001257374A5 true JP2001257374A5 (en) 2004-08-26
JP4257443B2 JP4257443B2 (en) 2009-04-22

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Family Applications (1)

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JP2000114399A Expired - Fee Related JP4257443B2 (en) 2000-03-10 2000-03-10 Solar cell and method for manufacturing the same

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JP (1) JP4257443B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4695850B2 (en) 2004-04-28 2011-06-08 本田技研工業株式会社 Chalcopyrite solar cell
JP4663300B2 (en) * 2004-11-18 2011-04-06 本田技研工業株式会社 Method for producing chalcopyrite thin film solar cell
JP4681352B2 (en) 2005-05-24 2011-05-11 本田技研工業株式会社 Chalcopyrite solar cell
JP3963924B2 (en) * 2005-07-22 2007-08-22 本田技研工業株式会社 Chalcopyrite solar cell
JP5530618B2 (en) * 2008-10-20 2014-06-25 出光興産株式会社 Photovoltaic element and manufacturing method thereof
CN102187472B (en) * 2008-10-20 2014-07-02 出光兴产株式会社 Photovoltaic element and method for manufacturing the same
JP5594949B2 (en) * 2008-10-20 2014-09-24 出光興産株式会社 Photovoltaic element and manufacturing method thereof
JP5465859B2 (en) * 2008-10-20 2014-04-09 出光興産株式会社 Photovoltaic element and manufacturing method thereof
CN106187154A (en) 2011-02-10 2016-12-07 三菱综合材料株式会社 For forming sputtering target and the manufacture method thereof of hyaline membrane used for solar batteries

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