TW200727451A - Cascode circuit - Google Patents
Cascode circuitInfo
- Publication number
- TW200727451A TW200727451A TW095117811A TW95117811A TW200727451A TW 200727451 A TW200727451 A TW 200727451A TW 095117811 A TW095117811 A TW 095117811A TW 95117811 A TW95117811 A TW 95117811A TW 200727451 A TW200727451 A TW 200727451A
- Authority
- TW
- Taiwan
- Prior art keywords
- fet
- source
- cascode circuit
- cascode
- drain
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005239524A JP5211421B2 (ja) | 2005-08-22 | 2005-08-22 | カスコード接続回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200727451A true TW200727451A (en) | 2007-07-16 |
TWI298199B TWI298199B (en) | 2008-06-21 |
Family
ID=37766666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095117811A TWI298199B (en) | 2005-08-22 | 2006-05-19 | Cascode circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US7342453B2 (zh) |
JP (1) | JP5211421B2 (zh) |
CN (1) | CN100594667C (zh) |
TW (1) | TWI298199B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004056435A1 (de) * | 2004-11-23 | 2006-06-01 | Universität Stuttgart | Leistungsverstärker zum Verstärken von Hochfrequenz(HF)-Signalen |
US7411454B1 (en) * | 2007-01-19 | 2008-08-12 | Chattin Daniel A | Electron turbulence damping circuit for a complimentary-symmetry amplification unit |
US20090050999A1 (en) * | 2007-08-21 | 2009-02-26 | Western Lights Semiconductor Corp. | Apparatus for storing electrical energy |
KR101040859B1 (ko) * | 2009-09-02 | 2011-06-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
US20150340997A1 (en) * | 2012-11-09 | 2015-11-26 | Mitsubishi Electric Corporation | Cascode amplifier |
US9496207B1 (en) | 2015-06-19 | 2016-11-15 | Semiconductor Components Industries, Llc | Cascode semiconductor package and related methods |
WO2019221707A1 (en) | 2018-05-15 | 2019-11-21 | Hewlett-Packard Development Company, L.P. | Fluidic die with low voltage monitoring circuit including high voltage tolerant transistor |
US11088688B2 (en) | 2019-02-13 | 2021-08-10 | Logisic Devices, Inc. | Configurations of composite devices comprising of a normally-on FET and a normally-off FET |
US11211484B2 (en) | 2019-02-13 | 2021-12-28 | Monolithic Power Systems, Inc. | Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same |
JP7272127B2 (ja) * | 2019-06-13 | 2023-05-12 | 富士電機株式会社 | 抵抗素子 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6230381A (ja) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | 電界効果型トランジスタの製造方法 |
JP3087278B2 (ja) * | 1989-12-26 | 2000-09-11 | 日本電気株式会社 | モノリシック集積回路素子 |
JP3161721B2 (ja) * | 1990-10-19 | 2001-04-25 | 株式会社日立製作所 | 増幅回路及びディスプレイ装置 |
JPH08264762A (ja) * | 1995-03-28 | 1996-10-11 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2002026276A (ja) * | 2000-07-06 | 2002-01-25 | Mitsubishi Electric Corp | 高周波用半導体素子と半導体装置、およびその製造方法 |
JP4239546B2 (ja) * | 2002-10-08 | 2009-03-18 | 日本電気株式会社 | 電子回路 |
JP4262545B2 (ja) * | 2003-07-09 | 2009-05-13 | 三菱電機株式会社 | カスコード接続回路及びその集積回路 |
-
2005
- 2005-08-22 JP JP2005239524A patent/JP5211421B2/ja active Active
-
2006
- 2006-05-19 TW TW095117811A patent/TWI298199B/zh active
- 2006-06-05 US US11/446,201 patent/US7342453B2/en active Active
- 2006-08-21 CN CN200610121370A patent/CN100594667C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN1921295A (zh) | 2007-02-28 |
US20070040226A1 (en) | 2007-02-22 |
TWI298199B (en) | 2008-06-21 |
CN100594667C (zh) | 2010-03-17 |
JP5211421B2 (ja) | 2013-06-12 |
JP2007059433A (ja) | 2007-03-08 |
US7342453B2 (en) | 2008-03-11 |
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