TW200727349A - Treatment of semiconductor wafers - Google Patents

Treatment of semiconductor wafers

Info

Publication number
TW200727349A
TW200727349A TW095113537A TW95113537A TW200727349A TW 200727349 A TW200727349 A TW 200727349A TW 095113537 A TW095113537 A TW 095113537A TW 95113537 A TW95113537 A TW 95113537A TW 200727349 A TW200727349 A TW 200727349A
Authority
TW
Taiwan
Prior art keywords
surface layer
treatment
semiconductor wafers
undergone
curve
Prior art date
Application number
TW095113537A
Other languages
English (en)
Inventor
Stephane Coletti
Veronique Duquennoy-Pont
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of TW200727349A publication Critical patent/TW200727349A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31515—As intermediate layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
TW095113537A 2005-04-15 2006-04-14 Treatment of semiconductor wafers TW200727349A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0503781A FR2884647B1 (fr) 2005-04-15 2005-04-15 Traitement de plaques de semi-conducteurs

Publications (1)

Publication Number Publication Date
TW200727349A true TW200727349A (en) 2007-07-16

Family

ID=35427270

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113537A TW200727349A (en) 2005-04-15 2006-04-14 Treatment of semiconductor wafers

Country Status (8)

Country Link
US (2) US7312153B2 (zh)
EP (1) EP1715516A1 (zh)
JP (1) JP4351686B2 (zh)
KR (1) KR100856170B1 (zh)
CN (1) CN100447956C (zh)
FR (1) FR2884647B1 (zh)
SG (2) SG126862A1 (zh)
TW (1) TW200727349A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808233B (zh) * 2018-08-06 2023-07-11 日商荏原製作所股份有限公司 研磨裝置及研磨方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7790565B2 (en) * 2006-04-21 2010-09-07 Corning Incorporated Semiconductor on glass insulator made using improved thinning process
KR100873259B1 (ko) * 2006-12-28 2008-12-11 주식회사 실트론 연마장치
US7767583B2 (en) 2008-03-04 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method to improve uniformity of chemical mechanical polishing planarization
US8252119B2 (en) * 2008-08-20 2012-08-28 Micron Technology, Inc. Microelectronic substrate cleaning systems with polyelectrolyte and associated methods
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
FR2944645B1 (fr) * 2009-04-21 2011-09-16 Soitec Silicon On Insulator Procede d'amincissement d'un substrat silicium sur isolant
JP6206173B2 (ja) * 2013-12-26 2017-10-04 信越半導体株式会社 半導体ウェーハの洗浄方法
CN109712814A (zh) * 2019-01-09 2019-05-03 东南大学 一种高效稳定的FeCo2S4导电薄膜的制备方法及应用
CN111659665B (zh) * 2020-05-29 2022-02-01 徐州鑫晶半导体科技有限公司 硅片的清洗方法及硅片的清洗设备

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Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5637151A (en) * 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5551986A (en) * 1995-02-15 1996-09-03 Taxas Instruments Incorporated Mechanical scrubbing for particle removal
US5919311A (en) * 1996-11-15 1999-07-06 Memc Electronic Materials, Inc. Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field
JP3319397B2 (ja) * 1998-07-07 2002-08-26 信越半導体株式会社 半導体製造装置およびこれを用いたエピタキシャルウェーハの製造方法
JP3385972B2 (ja) * 1998-07-10 2003-03-10 信越半導体株式会社 貼り合わせウェーハの製造方法および貼り合わせウェーハ
FR2797714B1 (fr) * 1999-08-20 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
FR2797713B1 (fr) 1999-08-20 2002-08-02 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
KR100741541B1 (ko) * 2000-05-30 2007-07-20 신에쯔 한도타이 가부시키가이샤 접합웨이퍼의 제조방법 및 접합웨이퍼
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
EP1309989B1 (en) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Process for producing semiconductor article using graded expitaxial growth
JP2002270614A (ja) * 2001-03-12 2002-09-20 Canon Inc Ｓｏｉ基体、その熱処理方法、それを有する半導体装置およびその製造方法
DE10131249A1 (de) * 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
US7071077B2 (en) * 2003-03-26 2006-07-04 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for preparing a bonding surface of a semiconductor layer of a wafer
JP2004356114A (ja) * 2003-05-26 2004-12-16 Tadahiro Omi Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur
WO2006007453A1 (en) * 2004-07-01 2006-01-19 Fsi International, Inc. Cleaning process for semiconductor substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808233B (zh) * 2018-08-06 2023-07-11 日商荏原製作所股份有限公司 研磨裝置及研磨方法

Also Published As

Publication number Publication date
US20080063872A1 (en) 2008-03-13
US20060234507A1 (en) 2006-10-19
SG126862A1 (en) 2006-11-29
KR20060109342A (ko) 2006-10-19
CN1848382A (zh) 2006-10-18
EP1715516A1 (fr) 2006-10-25
CN100447956C (zh) 2008-12-31
KR100856170B1 (ko) 2008-09-03
US7312153B2 (en) 2007-12-25
FR2884647B1 (fr) 2008-02-22
FR2884647A1 (fr) 2006-10-20
JP4351686B2 (ja) 2009-10-28
JP2006303497A (ja) 2006-11-02
SG145768A1 (en) 2008-09-29

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