TW200727092A - Composition for removing photoresist - Google Patents
Composition for removing photoresistInfo
- Publication number
- TW200727092A TW200727092A TW096100978A TW96100978A TW200727092A TW 200727092 A TW200727092 A TW 200727092A TW 096100978 A TW096100978 A TW 096100978A TW 96100978 A TW96100978 A TW 96100978A TW 200727092 A TW200727092 A TW 200727092A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- stripping
- compound
- composition
- effect
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 7
- 239000000203 mixture Substances 0.000 title abstract 6
- -1 (ethylene) glycol compound Chemical class 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- C11D2111/22—
Abstract
The present invention is related to the composition for stripping the photoresist, and is particularly related to a composition containing the compound, which has excellent stripping effect on the photoresist, selected from the ring-shaped compound having double oxygen bonds, (ethylene) glycol compound, and carbonic acid compound. The invented composition for stripping the photoresist can further contain the lactone compound, amine or organic acid, oxidizing agent or its mixture. The invented composition for stripping the photoresist can be applied to remove the photoresist used in the pattern formation for the metal layout of circuit or display device, and has excellent stripping effect on the residual photoresist on the patterned metal film. In addition, the variation of ingredients and medicament fatigue caused by the vaporization at high temperature is extremely small such that it is capable of reducing the etching effect on the patterned metal film to the minimum.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060002683A KR20070074746A (en) | 2006-01-10 | 2006-01-10 | Composition for removing a (photo)resist |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200727092A true TW200727092A (en) | 2007-07-16 |
Family
ID=38343247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096100978A TW200727092A (en) | 2006-01-10 | 2007-01-10 | Composition for removing photoresist |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007188077A (en) |
KR (1) | KR20070074746A (en) |
CN (1) | CN101025579A (en) |
TW (1) | TW200727092A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101668063B1 (en) * | 2013-05-07 | 2016-10-20 | 주식회사 엘지화학 | Stripper composition for removing photoresist and stripping mthod of photoresist using the same |
BR112016024205B1 (en) * | 2014-04-16 | 2023-10-17 | Ecolab Inc. | CLEANING COMPOSITIONS AND METHOD FOR REMOVING AN ACRYLIC-BASED POLYMER MATERIAL FROM TABLET COATINGS |
KR102317153B1 (en) * | 2016-06-15 | 2021-10-26 | 동우 화인켐 주식회사 | Resist stripper composition |
KR102446132B1 (en) * | 2016-09-16 | 2022-09-22 | 닛산 가가쿠 가부시키가이샤 | protective film forming composition |
CN115418647B (en) * | 2022-08-19 | 2024-01-05 | 广东红日星实业有限公司 | Wax removing water and preparation method and application thereof |
-
2006
- 2006-01-10 KR KR1020060002683A patent/KR20070074746A/en not_active Application Discontinuation
-
2007
- 2007-01-09 JP JP2007001604A patent/JP2007188077A/en not_active Withdrawn
- 2007-01-10 CN CNA2007100007015A patent/CN101025579A/en active Pending
- 2007-01-10 TW TW096100978A patent/TW200727092A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2007188077A (en) | 2007-07-26 |
CN101025579A (en) | 2007-08-29 |
KR20070074746A (en) | 2007-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200727092A (en) | Composition for removing photoresist | |
TWI426362B (en) | A photoresist stripping composition for manufacturing lcd | |
JP6006711B2 (en) | Photoresist stripping composition for LCD production containing primary alkanolamine | |
TWI263676B (en) | Compositions for chemically treating a substrate using foam technology | |
JP3339575B2 (en) | Release agent composition and release method | |
WO2005109108A8 (en) | Composition for removing a (photo) resist | |
TW200602818A (en) | Composition for removing a (photo) resist | |
TW200604762A (en) | Composition for removing photoresist and/or etching residue from a substrate and use thereof | |
TW200710611A (en) | Photoresist remover composition for removing modified photoresist of semiconductor device | |
TW201022431A (en) | Cleaning solution formulations for substrates | |
ATE420941T1 (en) | CHEMICAL RINSING COMPOSITION | |
TW200802592A (en) | Etching method and system, and computer readable recording medium | |
TW200721300A (en) | Damage-free ashing process and system for post low-k etch | |
WO2012018375A3 (en) | Plasma mediated ashing processes | |
TW200746293A (en) | Plasma etching method | |
DE602008002819D1 (en) | PEROXIDE-ACTIVATED OXOMETALATE-BASED FORMULATIONS FOR REMOVAL OF RESPIRATORY RESIDUES | |
ATE533833T1 (en) | AQUEOUS CLEANING COMPOSITION AND METHOD OF USE | |
TW200639594A (en) | Composition for photoresist stripping solution and process of photoresist stripping | |
KR20170019871A (en) | Composition of stripping solution for liquid crystal display process photoresist | |
TW200801857A (en) | Photoresist stripping liquid and method for processing substrate using the liquid | |
UA90931C2 (en) | Method for purifying of gas mixture, containing nitrogen oxide | |
TW200732828A (en) | Mask blank and mask | |
TW200517796A (en) | Stripping agent composition for a resist | |
TW200634134A (en) | Etching liquid composition | |
TW200728939A (en) | Thinner composition for removing photoresist |