TW200725173A - Cleaning agent for photolithography and photoresist pattern forming method using the same - Google Patents

Cleaning agent for photolithography and photoresist pattern forming method using the same

Info

Publication number
TW200725173A
TW200725173A TW095133318A TW95133318A TW200725173A TW 200725173 A TW200725173 A TW 200725173A TW 095133318 A TW095133318 A TW 095133318A TW 95133318 A TW95133318 A TW 95133318A TW 200725173 A TW200725173 A TW 200725173A
Authority
TW
Taiwan
Prior art keywords
cleaning agent
photolithography
forming method
photoresist pattern
pattern forming
Prior art date
Application number
TW095133318A
Other languages
Chinese (zh)
Inventor
Masaaki Yoshida
Kazumasa Wakiya
Katsumi Ohmori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200725173A publication Critical patent/TW200725173A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This invention discloses a cleaning agent for photolithography, a recycled cleaning agent obtained by recycling and purifying the used cleaning agent, and a photoresist pattern forming method using the cleaning agents, where the cleaning agent is formed by (A) a heterocyclic compound having at least one oxygen atom as a ring constituting atom and/or (B) a fluorinated hydrocarbon whose number of carbon atoms is 4~10 and hydrogen atoms are partially or wholly replaced by fluorine atoms. By means of the present invention, a recyclable cleaning agent for photolithography that is capable of easily and efficiently removing any coating (protective film) caused by the replacement of polymer by fluorine at low cost and a photoresist pattern forming method using the cleaning agent are provided.
TW095133318A 2005-09-09 2006-09-08 Cleaning agent for photolithography and photoresist pattern forming method using the same TW200725173A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005262284 2005-09-09
JP2005262285 2005-09-09
JP2005262283 2005-09-09
JP2005262286 2005-09-09

Publications (1)

Publication Number Publication Date
TW200725173A true TW200725173A (en) 2007-07-01

Family

ID=37835882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133318A TW200725173A (en) 2005-09-09 2006-09-08 Cleaning agent for photolithography and photoresist pattern forming method using the same

Country Status (2)

Country Link
TW (1) TW200725173A (en)
WO (1) WO2007029767A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4692341B2 (en) * 2006-03-14 2011-06-01 東京エレクトロン株式会社 Protective film removing apparatus, chemical recovery method and storage medium
CN107153329B (en) * 2017-06-19 2020-08-11 江阴润玛电子材料股份有限公司 High-recovery-rate environment-friendly stripping liquid for copper process in TFT (thin film transistor) industry

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591644B2 (en) * 1987-03-11 1997-03-19 東京応化工業株式会社 Photoresist stripper
JPS6460694A (en) * 1987-08-31 1989-03-07 Daikin Ind Ltd Azeotropic solvent composition
JPH024268A (en) * 1988-06-22 1990-01-09 Asahi Glass Co Ltd Resist peeling agent
JP3160344B2 (en) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド Organic stripping composition
JPH10316596A (en) * 1997-05-15 1998-12-02 Nippon Zeon Co Ltd Fluorinated saturated hydrocarbon
JP3409028B2 (en) * 2000-04-28 2003-05-19 松下環境空調エンジニアリング株式会社 Method and apparatus for regenerating solvent
JP3263065B1 (en) * 2001-02-14 2002-03-04 株式会社カネコ化学 Cleaning solvent composition
JP4304909B2 (en) * 2002-04-03 2009-07-29 東ソー株式会社 Cleaning agent and cleaning method using the same
WO2004027518A2 (en) * 2002-09-19 2004-04-01 Arch Specialty Chemicals, Inc. A method for the removal of an imaging layer from a semiconductor substrate stack
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP4215537B2 (en) * 2003-02-28 2009-01-28 日本カーリット株式会社 Resist stripper
JP2005026338A (en) * 2003-06-30 2005-01-27 Kobe Steel Ltd Cleaning liquid for fine structure objects
JP4405767B2 (en) * 2003-08-28 2010-01-27 ソニー株式会社 Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same
JP2005239615A (en) * 2004-02-25 2005-09-08 Nippon Zeon Co Ltd Method for refining fluorine-based solvent
KR20050110955A (en) * 2004-05-20 2005-11-24 금호석유화학 주식회사 Stripper composition for photoresist and using method thereof

Also Published As

Publication number Publication date
WO2007029767A1 (en) 2007-03-15

Similar Documents

Publication Publication Date Title
MY145556A (en) Method for purifying hydrogen chloride
TWI266969B (en) Removing solution
EP2146245A3 (en) Resist composition and patterning process
TW200734820A (en) Amine compound, chemically amplified resist composition and patterning process
TW200602301A (en) Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern
ATE460419T1 (en) ORGANOSILICON COMPOUNDS, THEIR PRODUCTION AND THEIR USE
SG129387A1 (en) Substrate, lithographic multiple exposure method, machine readable medium
TW200626631A (en) Photosensitizer, photosensitive acid generating agent, and photocurable composition
TW200739269A (en) Coating compositions for photoresists
TW200731338A (en) Liquid recycle component, exposure apparatus, exposure method and device fabrication method
TW200714575A (en) Polyarylene and process for producing the same
EP1739143A4 (en) Surface treating agent, fluorine-containing monomer and fluorine-containing polymer
ATE533833T1 (en) AQUEOUS CLEANING COMPOSITION AND METHOD OF USE
ATE453739T1 (en) DECOATING PROCESS
TW200619851A (en) Resist composition electron beam of EUV(extreme ultraviolet rays) and process for forming resist pattern
TW200728925A (en) Protective film forming material and photoresist pattern forming method using the same
SG155061A1 (en) Photoresist composition for deep ultraviolet lithography
TW200725173A (en) Cleaning agent for photolithography and photoresist pattern forming method using the same
ATE439618T1 (en) MEMBRANE COVER AND ADHESIVE THEREOF
WO2009022561A1 (en) Positive working resist composition and method for pattern formation using the positive working resist composition
BR0314663A (en) Process for polysulfan conversion
RS51329B (en) New combinations of a 5-ht3 receptor antagonist with rececadotril or dexecadotril
SE0601337L (en) Method for providing an improved pavement, use of a grinding unit for the renovation of a roadway and for such refurbishing equipment and method.
TW200502697A (en) Polyester compound with sulfonamide structure, polymer, photoresist and patterning process
TWI266957B (en) Novel polymer, positive photoresist composition, and patterning process using the same