TW200725173A - Cleaning agent for photolithography and photoresist pattern forming method using the same - Google Patents
Cleaning agent for photolithography and photoresist pattern forming method using the sameInfo
- Publication number
- TW200725173A TW200725173A TW095133318A TW95133318A TW200725173A TW 200725173 A TW200725173 A TW 200725173A TW 095133318 A TW095133318 A TW 095133318A TW 95133318 A TW95133318 A TW 95133318A TW 200725173 A TW200725173 A TW 200725173A
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning agent
- photolithography
- forming method
- photoresist pattern
- pattern forming
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This invention discloses a cleaning agent for photolithography, a recycled cleaning agent obtained by recycling and purifying the used cleaning agent, and a photoresist pattern forming method using the cleaning agents, where the cleaning agent is formed by (A) a heterocyclic compound having at least one oxygen atom as a ring constituting atom and/or (B) a fluorinated hydrocarbon whose number of carbon atoms is 4~10 and hydrogen atoms are partially or wholly replaced by fluorine atoms. By means of the present invention, a recyclable cleaning agent for photolithography that is capable of easily and efficiently removing any coating (protective film) caused by the replacement of polymer by fluorine at low cost and a photoresist pattern forming method using the cleaning agent are provided.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005262284 | 2005-09-09 | ||
JP2005262285 | 2005-09-09 | ||
JP2005262283 | 2005-09-09 | ||
JP2005262286 | 2005-09-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200725173A true TW200725173A (en) | 2007-07-01 |
Family
ID=37835882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095133318A TW200725173A (en) | 2005-09-09 | 2006-09-08 | Cleaning agent for photolithography and photoresist pattern forming method using the same |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200725173A (en) |
WO (1) | WO2007029767A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4692341B2 (en) * | 2006-03-14 | 2011-06-01 | 東京エレクトロン株式会社 | Protective film removing apparatus, chemical recovery method and storage medium |
CN107153329B (en) * | 2017-06-19 | 2020-08-11 | 江阴润玛电子材料股份有限公司 | High-recovery-rate environment-friendly stripping liquid for copper process in TFT (thin film transistor) industry |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2591644B2 (en) * | 1987-03-11 | 1997-03-19 | 東京応化工業株式会社 | Photoresist stripper |
JPS6460694A (en) * | 1987-08-31 | 1989-03-07 | Daikin Ind Ltd | Azeotropic solvent composition |
JPH024268A (en) * | 1988-06-22 | 1990-01-09 | Asahi Glass Co Ltd | Resist peeling agent |
JP3160344B2 (en) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | Organic stripping composition |
JPH10316596A (en) * | 1997-05-15 | 1998-12-02 | Nippon Zeon Co Ltd | Fluorinated saturated hydrocarbon |
JP3409028B2 (en) * | 2000-04-28 | 2003-05-19 | 松下環境空調エンジニアリング株式会社 | Method and apparatus for regenerating solvent |
JP3263065B1 (en) * | 2001-02-14 | 2002-03-04 | 株式会社カネコ化学 | Cleaning solvent composition |
JP4304909B2 (en) * | 2002-04-03 | 2009-07-29 | 東ソー株式会社 | Cleaning agent and cleaning method using the same |
WO2004027518A2 (en) * | 2002-09-19 | 2004-04-01 | Arch Specialty Chemicals, Inc. | A method for the removal of an imaging layer from a semiconductor substrate stack |
TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
JP4215537B2 (en) * | 2003-02-28 | 2009-01-28 | 日本カーリット株式会社 | Resist stripper |
JP2005026338A (en) * | 2003-06-30 | 2005-01-27 | Kobe Steel Ltd | Cleaning liquid for fine structure objects |
JP4405767B2 (en) * | 2003-08-28 | 2010-01-27 | ソニー株式会社 | Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same |
JP2005239615A (en) * | 2004-02-25 | 2005-09-08 | Nippon Zeon Co Ltd | Method for refining fluorine-based solvent |
KR20050110955A (en) * | 2004-05-20 | 2005-11-24 | 금호석유화학 주식회사 | Stripper composition for photoresist and using method thereof |
-
2006
- 2006-09-07 WO PCT/JP2006/317739 patent/WO2007029767A1/en active Application Filing
- 2006-09-08 TW TW095133318A patent/TW200725173A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007029767A1 (en) | 2007-03-15 |
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