TW200724495A - Nanowires and a method of the same - Google Patents

Nanowires and a method of the same

Info

Publication number
TW200724495A
TW200724495A TW094147580A TW94147580A TW200724495A TW 200724495 A TW200724495 A TW 200724495A TW 094147580 A TW094147580 A TW 094147580A TW 94147580 A TW94147580 A TW 94147580A TW 200724495 A TW200724495 A TW 200724495A
Authority
TW
Taiwan
Prior art keywords
precursor solution
group elements
nanowires
surfactant
mixed solution
Prior art date
Application number
TW094147580A
Other languages
English (en)
Other versions
TWI342866B (en
Inventor
Hsueh-Shih Chen
Shu-Ru Chung
Gwo-Yang Chang
Shih-Jung Tsai
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW094147580A priority Critical patent/TWI342866B/zh
Priority to US11/507,448 priority patent/US7566435B2/en
Publication of TW200724495A publication Critical patent/TW200724495A/zh
Application granted granted Critical
Publication of TWI342866B publication Critical patent/TWI342866B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Colloid Chemistry (AREA)
TW094147580A 2005-12-30 2005-12-30 Nanowires and a method of the same TWI342866B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094147580A TWI342866B (en) 2005-12-30 2005-12-30 Nanowires and a method of the same
US11/507,448 US7566435B2 (en) 2005-12-30 2006-08-22 Nanowires and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094147580A TWI342866B (en) 2005-12-30 2005-12-30 Nanowires and a method of the same

Publications (2)

Publication Number Publication Date
TW200724495A true TW200724495A (en) 2007-07-01
TWI342866B TWI342866B (en) 2011-06-01

Family

ID=38225022

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147580A TWI342866B (en) 2005-12-30 2005-12-30 Nanowires and a method of the same

Country Status (2)

Country Link
US (1) US7566435B2 (zh)
TW (1) TWI342866B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163641A (zh) * 2011-03-17 2011-08-24 合肥工业大学 ZnSe纳米光电探测器及其制备方法
TWI495617B (zh) * 2013-01-30 2015-08-11 中原大學 A method for preparing powdered zinc oxide nanowires
CN117254015A (zh) * 2023-11-10 2023-12-19 浙江帕瓦新能源股份有限公司 高镍正极材料及其制备方法、锂离子电池

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101671006B (zh) * 2009-09-27 2011-07-20 上海大学 纳米硒化锌量子点粉体的电子束辐照合成方法
US8329137B2 (en) * 2011-01-20 2012-12-11 Nanowin Technology Co., Ltd. Method for making a chalcopyrite-type compound
US8252265B2 (en) * 2011-01-20 2012-08-28 Nanowin Technology Co., Ltd. Method for making a chalcopyrite-type compound
CN102530891B (zh) * 2011-03-02 2014-02-05 北京师范大学 一种液相非催化法制备CdTe纳米线及CdTe基核壳型纳米线
US8946678B2 (en) 2012-03-15 2015-02-03 Virginia Commonwealth University Room temperature nanowire IR, visible and UV photodetectors
TWI623945B (zh) * 2016-06-20 2018-05-11 國立清華大學 感測裝置及其製造方法
TWI658155B (zh) * 2016-06-20 2019-05-01 國立清華大學 奈米線複合結構的製造方法
CN108529691B (zh) * 2018-04-24 2020-10-27 电子科技大学 片状金属氧化物及其可控合成方法和用途

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FR2586913B1 (fr) * 1985-09-10 1990-08-03 Oreal Procede pour former in situ une composition constituee de deux parties conditionnees separement et ensemble distributeur pour la mise en oeuvre de ce procede
FR2630438B1 (fr) * 1988-04-25 1990-08-24 Oreal Nouvelles p-phenylenediamines, leur procede de preparation, composition tinctoriale les contenant et procede de teinture correspondant
DE19957282C1 (de) * 1999-11-29 2001-05-17 Wella Ag Verfahren zur Herstellung von 1,4-Diamino-2-methoxymethyl-benzol und dessen Salzen
DE19961229C1 (de) * 1999-12-18 2001-04-05 Wella Ag Verfahren zur Herstellung von 2-Aminomethyl-1,4-diamino-benzol und dessen Salzen sowie die Verwendung dieser Verbindungen in Färbemitteln für Keratinfasern
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
JP3993089B2 (ja) * 2002-12-26 2007-10-17 良幸 川添 多重粒子及びその製造方法
CN1253923C (zh) 2002-12-31 2006-04-26 中国科学院化学研究所 水溶液中制备一维半导体纳米棒与纳米线的方法
US7115971B2 (en) * 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
KR100621309B1 (ko) * 2004-04-20 2006-09-14 삼성전자주식회사 황 전구체로서 싸이올 화합물을 이용한 황화 금속나노결정의 제조방법
KR100621308B1 (ko) * 2004-05-28 2006-09-14 삼성전자주식회사 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163641A (zh) * 2011-03-17 2011-08-24 合肥工业大学 ZnSe纳米光电探测器及其制备方法
CN102163641B (zh) * 2011-03-17 2012-08-22 合肥工业大学 ZnSe纳米光电探测器及其制备方法
TWI495617B (zh) * 2013-01-30 2015-08-11 中原大學 A method for preparing powdered zinc oxide nanowires
CN117254015A (zh) * 2023-11-10 2023-12-19 浙江帕瓦新能源股份有限公司 高镍正极材料及其制备方法、锂离子电池
CN117254015B (zh) * 2023-11-10 2024-03-15 浙江帕瓦新能源股份有限公司 高镍正极材料及其制备方法、锂离子电池

Also Published As

Publication number Publication date
TWI342866B (en) 2011-06-01
US7566435B2 (en) 2009-07-28
US20070155173A1 (en) 2007-07-05

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