CN101671006B - 纳米硒化锌量子点粉体的电子束辐照合成方法 - Google Patents
纳米硒化锌量子点粉体的电子束辐照合成方法 Download PDFInfo
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- CN101671006B CN101671006B CN2009101965858A CN200910196585A CN101671006B CN 101671006 B CN101671006 B CN 101671006B CN 2009101965858 A CN2009101965858 A CN 2009101965858A CN 200910196585 A CN200910196585 A CN 200910196585A CN 101671006 B CN101671006 B CN 101671006B
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- quantum dot
- zinc selenide
- irradiation
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- reaction product
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- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 title claims abstract description 14
- 239000002096 quantum dot Substances 0.000 title claims abstract description 13
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 11
- 238000001308 synthesis method Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 claims abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- BVTBRVFYZUCAKH-UHFFFAOYSA-L disodium selenite Chemical compound [Na+].[Na+].[O-][Se]([O-])=O BVTBRVFYZUCAKH-UHFFFAOYSA-L 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000002516 radical scavenger Substances 0.000 claims abstract description 4
- 229960001471 sodium selenite Drugs 0.000 claims abstract description 4
- 239000011781 sodium selenite Substances 0.000 claims abstract description 4
- 235000015921 sodium selenite Nutrition 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 9
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 8
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000003746 solid phase reaction Methods 0.000 claims description 5
- 238000010671 solid-state reaction Methods 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- 150000003254 radicals Chemical class 0.000 claims description 4
- 239000012153 distilled water Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000003352 sequestering agent Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 abstract description 10
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 150000002484 inorganic compounds Chemical class 0.000 abstract description 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 229960001484 edetic acid Drugs 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BDOYKFSQFYNPKF-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O BDOYKFSQFYNPKF-UHFFFAOYSA-N 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- WSZKUEZEYFNPID-UHFFFAOYSA-N hydrogen sulfate;quinolin-1-ium Chemical compound OS(O)(=O)=O.N1=CC=CC2=CC=CC=C21 WSZKUEZEYFNPID-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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CN2009101965858A CN101671006B (zh) | 2009-09-27 | 2009-09-27 | 纳米硒化锌量子点粉体的电子束辐照合成方法 |
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CN2009101965858A CN101671006B (zh) | 2009-09-27 | 2009-09-27 | 纳米硒化锌量子点粉体的电子束辐照合成方法 |
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CN101671006A CN101671006A (zh) | 2010-03-17 |
CN101671006B true CN101671006B (zh) | 2011-07-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102502532A (zh) * | 2011-11-17 | 2012-06-20 | 永兴县金润有色金属有限责任公司 | 从铜阳极泥中提取高纯氧化碲的方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103865539A (zh) * | 2014-01-29 | 2014-06-18 | 安徽理工大学 | 一种超声电化学合成水溶性CdTe量子点的方法 |
CN114506824B (zh) * | 2021-12-02 | 2023-09-05 | 佛山市铁人环保科技有限公司 | 一种硒化锌溶胶及其制备方法和应用 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1915803A (zh) * | 2006-09-08 | 2007-02-21 | 华中科技大学 | 一种硒化锌多晶纳米薄膜的制备方法 |
US20070155173A1 (en) * | 2005-12-30 | 2007-07-05 | Industrial Technology Research Institute | Nanowires and method for making the same |
EP1857575A2 (en) * | 2006-05-16 | 2007-11-21 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal-metal complex and method of preparing the same |
CN101130693A (zh) * | 2007-09-27 | 2008-02-27 | 上海交通大学 | 三元量子点CdZnSe的制备方法 |
CN101332979A (zh) * | 2008-08-01 | 2008-12-31 | 湖南大学 | CdSe及ZnSe量子点纳米颗粒的制备方法 |
CN101428770A (zh) * | 2008-12-08 | 2009-05-13 | 云南大学 | 一种ZnSe荧光量子点的合成方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070155173A1 (en) * | 2005-12-30 | 2007-07-05 | Industrial Technology Research Institute | Nanowires and method for making the same |
EP1857575A2 (en) * | 2006-05-16 | 2007-11-21 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal-metal complex and method of preparing the same |
CN1915803A (zh) * | 2006-09-08 | 2007-02-21 | 华中科技大学 | 一种硒化锌多晶纳米薄膜的制备方法 |
CN101130693A (zh) * | 2007-09-27 | 2008-02-27 | 上海交通大学 | 三元量子点CdZnSe的制备方法 |
CN101332979A (zh) * | 2008-08-01 | 2008-12-31 | 湖南大学 | CdSe及ZnSe量子点纳米颗粒的制备方法 |
CN101428770A (zh) * | 2008-12-08 | 2009-05-13 | 云南大学 | 一种ZnSe荧光量子点的合成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102502532A (zh) * | 2011-11-17 | 2012-06-20 | 永兴县金润有色金属有限责任公司 | 从铜阳极泥中提取高纯氧化碲的方法 |
CN102502532B (zh) * | 2011-11-17 | 2013-08-07 | 永兴县金润有色金属有限责任公司 | 从铜阳极泥中提取高纯氧化碲的方法 |
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Effective date of registration: 20140505 Address after: 226600, Chengbei Industrial Zone, Haian County, Jiangsu, Nantong Patentee after: HAIAN JINQUAN ELECTRICAL APPLIANCE Co.,Ltd. Address before: 200444 Baoshan District Road, Shanghai, No. 99 Patentee before: Shanghai University |
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