TW200723554A - Process for manufacturing pieces of a foil having an inorganic coating - Google Patents

Process for manufacturing pieces of a foil having an inorganic coating

Info

Publication number
TW200723554A
TW200723554A TW095112133A TW95112133A TW200723554A TW 200723554 A TW200723554 A TW 200723554A TW 095112133 A TW095112133 A TW 095112133A TW 95112133 A TW95112133 A TW 95112133A TW 200723554 A TW200723554 A TW 200723554A
Authority
TW
Taiwan
Prior art keywords
foil
inorganic coating
temporary substrate
pieces
cutting line
Prior art date
Application number
TW095112133A
Other languages
English (en)
Chinese (zh)
Inventor
Jonge Ludmila V De
Original Assignee
Akzo Nobel Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akzo Nobel Nv filed Critical Akzo Nobel Nv
Publication of TW200723554A publication Critical patent/TW200723554A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
TW095112133A 2005-04-06 2006-04-06 Process for manufacturing pieces of a foil having an inorganic coating TW200723554A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05075792 2005-04-06
US67628605P 2005-05-02 2005-05-02

Publications (1)

Publication Number Publication Date
TW200723554A true TW200723554A (en) 2007-06-16

Family

ID=35063187

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112133A TW200723554A (en) 2005-04-06 2006-04-06 Process for manufacturing pieces of a foil having an inorganic coating

Country Status (9)

Country Link
US (1) US20080190482A1 (enExample)
EP (1) EP1866974B1 (enExample)
JP (1) JP2008537643A (enExample)
KR (1) KR100983838B1 (enExample)
CN (1) CN100568544C (enExample)
AR (1) AR053209A1 (enExample)
ES (1) ES2672648T3 (enExample)
TW (1) TW200723554A (enExample)
WO (1) WO2006106072A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423463B (zh) * 2008-12-12 2014-01-11 Sun Well Solar Corp 以溶凝膠法合成半導體化合物薄膜層的製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1940989B1 (en) * 2005-09-29 2010-12-15 Dow Corning Corporation Method of releasing high temperature films and/or devices from metallic substrates
DE102008008726A1 (de) * 2008-02-12 2009-09-24 Schott Solar Gmbh Photovoltaisches Modul und Verfahren zu dessen Herstellung
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
FR3017243B1 (fr) * 2014-02-05 2016-02-12 Nexcis Procede de fabrication d’un empilement de couches minces decollable de son substrat
CN110518079B (zh) * 2019-09-29 2024-05-07 信利半导体有限公司 一种光电转换率高的薄膜光伏电池及其制备工艺
US11096288B2 (en) * 2019-12-20 2021-08-17 Xerox Corporation Flexible conductive printed circuits with printed overcoats

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484132A (en) * 1981-03-09 1984-11-20 Crites Nelson A Crack detecting system
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
JP2001501035A (ja) * 1996-09-26 2001-01-23 アクゾ ノーベル ナムローゼ フェンノートシャップ 光起電箔の製造法
US6003421A (en) * 1997-08-15 1999-12-21 Milich; Bruce Apparatus and method for cutting elongated webs of material
JPH11238897A (ja) * 1998-02-23 1999-08-31 Canon Inc 太陽電池モジュール製造方法および太陽電池モジュール
US6160215A (en) * 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6274458B1 (en) * 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2002033296A (ja) * 2000-04-26 2002-01-31 Lintec Corp シリコンウエハ用の補強材および該補強材を用いたｉｃチップの製造方法
CN100505280C (zh) * 2003-07-22 2009-06-24 阿克佐诺贝尔股份有限公司 用临时衬底制造太阳能电池薄片的方法和太阳能电池单元

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423463B (zh) * 2008-12-12 2014-01-11 Sun Well Solar Corp 以溶凝膠法合成半導體化合物薄膜層的製造方法

Also Published As

Publication number Publication date
CN100568544C (zh) 2009-12-09
AR053209A1 (es) 2007-04-25
WO2006106072A1 (en) 2006-10-12
HK1110994A1 (zh) 2008-07-25
US20080190482A1 (en) 2008-08-14
KR20070114270A (ko) 2007-11-30
EP1866974B1 (en) 2018-01-10
KR100983838B1 (ko) 2010-09-27
CN101151738A (zh) 2008-03-26
JP2008537643A (ja) 2008-09-18
EP1866974A1 (en) 2007-12-19
ES2672648T3 (es) 2018-06-15

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