CN100568544C - 用于制造具有tco无机涂层的箔片的方法以及使用该方法制造的箔片 - Google Patents

用于制造具有tco无机涂层的箔片的方法以及使用该方法制造的箔片 Download PDF

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Publication number
CN100568544C
CN100568544C CNB2006800102371A CN200680010237A CN100568544C CN 100568544 C CN100568544 C CN 100568544C CN B2006800102371 A CNB2006800102371 A CN B2006800102371A CN 200680010237 A CN200680010237 A CN 200680010237A CN 100568544 C CN100568544 C CN 100568544C
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China
Prior art keywords
interim substrate
cut
layer
line
foil
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CNB2006800102371A
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English (en)
Chinese (zh)
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CN101151738A (zh
Inventor
L·V·德扬
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Helianthos BV
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Akzo Nobel Co ltd
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Publication of CN101151738A publication Critical patent/CN101151738A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Photovoltaic Devices (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
CNB2006800102371A 2005-04-06 2006-03-31 用于制造具有tco无机涂层的箔片的方法以及使用该方法制造的箔片 Active CN100568544C (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP05075792.1 2005-04-06
EP05075792 2005-04-06
US67628605P 2005-05-02 2005-05-02
US60/676,286 2005-05-02
PCT/EP2006/061206 WO2006106072A1 (en) 2005-04-06 2006-03-31 Process for manufacturing pieces of a foil having an inorganic coating of e. g. tco

Publications (2)

Publication Number Publication Date
CN101151738A CN101151738A (zh) 2008-03-26
CN100568544C true CN100568544C (zh) 2009-12-09

Family

ID=35063187

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006800102371A Active CN100568544C (zh) 2005-04-06 2006-03-31 用于制造具有tco无机涂层的箔片的方法以及使用该方法制造的箔片

Country Status (9)

Country Link
US (1) US20080190482A1 (enExample)
EP (1) EP1866974B1 (enExample)
JP (1) JP2008537643A (enExample)
KR (1) KR100983838B1 (enExample)
CN (1) CN100568544C (enExample)
AR (1) AR053209A1 (enExample)
ES (1) ES2672648T3 (enExample)
TW (1) TW200723554A (enExample)
WO (1) WO2006106072A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009510216A (ja) * 2005-09-29 2009-03-12 ダウ・コーニング・コーポレイション 金属基材からの高温用フィルムおよび／またはデバイスの剥離方法
DE102008008726A1 (de) * 2008-02-12 2009-09-24 Schott Solar Gmbh Photovoltaisches Modul und Verfahren zu dessen Herstellung
TWI423463B (zh) * 2008-12-12 2014-01-11 Sun Well Solar Corp 以溶凝膠法合成半導體化合物薄膜層的製造方法
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
FR3017243B1 (fr) * 2014-02-05 2016-02-12 Nexcis Procede de fabrication d’un empilement de couches minces decollable de son substrat
CN110518079B (zh) * 2019-09-29 2024-05-07 信利半导体有限公司 一种光电转换率高的薄膜光伏电池及其制备工艺
US11096288B2 (en) * 2019-12-20 2021-08-17 Xerox Corporation Flexible conductive printed circuits with printed overcoats

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US20020031863A1 (en) * 2000-04-26 2002-03-14 Yasukazu Nakata Reinforcement material for silicone wafer and process for producing IC chip using said material
WO2005015638A1 (en) * 2003-07-22 2005-02-17 Akzo Nobel N.V. Process for manufacturing a solar cell foil using a temporary substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484132A (en) * 1981-03-09 1984-11-20 Crites Nelson A Crack detecting system
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
CA2267076C (en) * 1996-09-26 2005-01-25 Akzo Nobel Nv Method of manufacturing a photovoltaic foil
US6003421A (en) * 1997-08-15 1999-12-21 Milich; Bruce Apparatus and method for cutting elongated webs of material
JPH11238897A (ja) * 1998-02-23 1999-08-31 Canon Inc 太陽電池モジュール製造方法および太陽電池モジュール
US6160215A (en) * 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6274458B1 (en) * 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US20020031863A1 (en) * 2000-04-26 2002-03-14 Yasukazu Nakata Reinforcement material for silicone wafer and process for producing IC chip using said material
WO2005015638A1 (en) * 2003-07-22 2005-02-17 Akzo Nobel N.V. Process for manufacturing a solar cell foil using a temporary substrate

Also Published As

Publication number Publication date
AR053209A1 (es) 2007-04-25
KR20070114270A (ko) 2007-11-30
ES2672648T3 (es) 2018-06-15
US20080190482A1 (en) 2008-08-14
EP1866974A1 (en) 2007-12-19
KR100983838B1 (ko) 2010-09-27
WO2006106072A1 (en) 2006-10-12
JP2008537643A (ja) 2008-09-18
TW200723554A (en) 2007-06-16
HK1110994A1 (zh) 2008-07-25
EP1866974B1 (en) 2018-01-10
CN101151738A (zh) 2008-03-26

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