JP2008537643A - たとえばｔｃｏの無機コーティングを有する箔片の製造方法 - Google Patents

たとえばｔｃｏの無機コーティングを有する箔片の製造方法 Download PDF

Info

Publication number
JP2008537643A
JP2008537643A JP2008504746A JP2008504746A JP2008537643A JP 2008537643 A JP2008537643 A JP 2008537643A JP 2008504746 A JP2008504746 A JP 2008504746A JP 2008504746 A JP2008504746 A JP 2008504746A JP 2008537643 A JP2008537643 A JP 2008537643A
Authority
JP
Japan
Prior art keywords
temporary substrate
layer
foil
cutting line
temporary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008504746A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008537643A5 (enExample
Inventor
ヨング，ルドミラ，ブイ． デ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akzo Nobel NV
Original Assignee
Akzo Nobel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akzo Nobel NV filed Critical Akzo Nobel NV
Publication of JP2008537643A publication Critical patent/JP2008537643A/ja
Publication of JP2008537643A5 publication Critical patent/JP2008537643A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
JP2008504746A 2005-04-06 2006-03-31 たとえばｔｃｏの無機コーティングを有する箔片の製造方法 Pending JP2008537643A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05075792 2005-04-06
US67628605P 2005-05-02 2005-05-02
PCT/EP2006/061206 WO2006106072A1 (en) 2005-04-06 2006-03-31 Process for manufacturing pieces of a foil having an inorganic coating of e. g. tco

Publications (2)

Publication Number Publication Date
JP2008537643A true JP2008537643A (ja) 2008-09-18
JP2008537643A5 JP2008537643A5 (enExample) 2009-05-21

Family

ID=35063187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008504746A Pending JP2008537643A (ja) 2005-04-06 2006-03-31 たとえばｔｃｏの無機コーティングを有する箔片の製造方法

Country Status (9)

Country Link
US (1) US20080190482A1 (enExample)
EP (1) EP1866974B1 (enExample)
JP (1) JP2008537643A (enExample)
KR (1) KR100983838B1 (enExample)
CN (1) CN100568544C (enExample)
AR (1) AR053209A1 (enExample)
ES (1) ES2672648T3 (enExample)
TW (1) TW200723554A (enExample)
WO (1) WO2006106072A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1940989B1 (en) * 2005-09-29 2010-12-15 Dow Corning Corporation Method of releasing high temperature films and/or devices from metallic substrates
DE102008008726A1 (de) * 2008-02-12 2009-09-24 Schott Solar Gmbh Photovoltaisches Modul und Verfahren zu dessen Herstellung
TWI423463B (zh) * 2008-12-12 2014-01-11 Sun Well Solar Corp 以溶凝膠法合成半導體化合物薄膜層的製造方法
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
FR3017243B1 (fr) * 2014-02-05 2016-02-12 Nexcis Procede de fabrication d’un empilement de couches minces decollable de son substrat
CN110518079B (zh) * 2019-09-29 2024-05-07 信利半导体有限公司 一种光电转换率高的薄膜光伏电池及其制备工艺
US11096288B2 (en) * 2019-12-20 2021-08-17 Xerox Corporation Flexible conductive printed circuits with printed overcoats

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001501035A (ja) * 1996-09-26 2001-01-23 アクゾ ノーベル ナムローゼ フェンノートシャップ 光起電箔の製造法
JP2002033296A (ja) * 2000-04-26 2002-01-31 Lintec Corp シリコンウエハ用の補強材および該補強材を用いたｉｃチップの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484132A (en) * 1981-03-09 1984-11-20 Crites Nelson A Crack detecting system
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
US6003421A (en) * 1997-08-15 1999-12-21 Milich; Bruce Apparatus and method for cutting elongated webs of material
JPH11238897A (ja) * 1998-02-23 1999-08-31 Canon Inc 太陽電池モジュール製造方法および太陽電池モジュール
US6160215A (en) * 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6274458B1 (en) * 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
CN100505280C (zh) * 2003-07-22 2009-06-24 阿克佐诺贝尔股份有限公司 用临时衬底制造太阳能电池薄片的方法和太阳能电池单元

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001501035A (ja) * 1996-09-26 2001-01-23 アクゾ ノーベル ナムローゼ フェンノートシャップ 光起電箔の製造法
JP2002033296A (ja) * 2000-04-26 2002-01-31 Lintec Corp シリコンウエハ用の補強材および該補強材を用いたｉｃチップの製造方法

Also Published As

Publication number Publication date
CN100568544C (zh) 2009-12-09
AR053209A1 (es) 2007-04-25
WO2006106072A1 (en) 2006-10-12
HK1110994A1 (zh) 2008-07-25
TW200723554A (en) 2007-06-16
US20080190482A1 (en) 2008-08-14
KR20070114270A (ko) 2007-11-30
EP1866974B1 (en) 2018-01-10
KR100983838B1 (ko) 2010-09-27
CN101151738A (zh) 2008-03-26
EP1866974A1 (en) 2007-12-19
ES2672648T3 (es) 2018-06-15

Similar Documents

Publication Publication Date Title
CN100505280C (zh) 用临时衬底制造太阳能电池薄片的方法和太阳能电池单元
US6184057B1 (en) Method of manufacturing a photovoltaic foil
WO2015147225A1 (ja) 太陽電池モジュールおよびその製造方法
CA2405177C (en) Method of manufacturing a photovoltaic foil
JP4368685B2 (ja) 仮の基材を用いる太陽電池ユニットの製造法
US20050109389A1 (en) Process for manufacturing a solar cell unit using a temporary substrate
KR100983838B1 (ko) 투명 전도성 산화물의 무기 코팅을 갖는 호일 조각의 제조 방법
HK1110994B (en) Process for manufacturing pieces of a foil having an inorganic coating of e. g. tco and pieces of a foil manufactured by the process
HK1075325A (en) Process for manufacturing a solar cell unit using a temporary substrate

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090331

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090331

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20090731

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090722

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110705

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110706

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110712

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111012

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120112

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120619