TW200720414A - Polishing composition - Google Patents

Polishing composition

Info

Publication number
TW200720414A
TW200720414A TW095132436A TW95132436A TW200720414A TW 200720414 A TW200720414 A TW 200720414A TW 095132436 A TW095132436 A TW 095132436A TW 95132436 A TW95132436 A TW 95132436A TW 200720414 A TW200720414 A TW 200720414A
Authority
TW
Taiwan
Prior art keywords
polishing composition
triazole
membered ring
polishing
ring backbone
Prior art date
Application number
TW095132436A
Other languages
English (en)
Other versions
TWI402332B (zh
Inventor
Tatsuhiko Hirano
Hiroshi Asano
Katsunobu Hori
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW200720414A publication Critical patent/TW200720414A/zh
Application granted granted Critical
Publication of TWI402332B publication Critical patent/TWI402332B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095132436A 2005-09-02 2006-09-01 研磨用組成物 TWI402332B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005255534 2005-09-02
JP2006053242A JP5026710B2 (ja) 2005-09-02 2006-02-28 研磨用組成物

Publications (2)

Publication Number Publication Date
TW200720414A true TW200720414A (en) 2007-06-01
TWI402332B TWI402332B (zh) 2013-07-21

Family

ID=37808944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132436A TWI402332B (zh) 2005-09-02 2006-09-01 研磨用組成物

Country Status (6)

Country Link
US (1) US20090127500A1 (zh)
JP (1) JP5026710B2 (zh)
KR (1) KR101291761B1 (zh)
DE (1) DE112006002327T5 (zh)
TW (1) TWI402332B (zh)
WO (1) WO2007026861A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009087981A (ja) * 2007-09-27 2009-04-23 Fujifilm Corp 研磨液及び研磨方法
WO2010140671A1 (ja) * 2009-06-05 2010-12-09 株式会社Sumco シリコンウェーハの研磨方法及びシリコンウェーハ
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity
WO2014112418A1 (ja) * 2013-01-16 2014-07-24 日立化成株式会社 金属用研磨液及び研磨方法
US10029346B2 (en) * 2015-10-16 2018-07-24 Applied Materials, Inc. External clamp ring for a chemical mechanical polishing carrier head
JP7409899B2 (ja) 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
KR19980032145A (ko) * 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100491465B1 (ko) * 1998-08-31 2005-05-25 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 연마 방법
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
CN1243071C (zh) 1998-12-28 2006-02-22 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
US6238592B1 (en) * 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
EP1218464B1 (en) * 1999-08-13 2008-08-20 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US7351353B1 (en) * 2000-01-07 2008-04-01 Electrochemicals, Inc. Method for roughening copper surfaces for bonding to substrates
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
WO2003021651A1 (fr) * 2001-08-16 2003-03-13 Asahi Kasei Chemicals Corporation Fluide de polissage conçu pour un film metallique et procede de production d'un substrat semi-conducteur au moyen de ce fluide de polissage
TW567551B (en) * 2001-08-16 2003-12-21 Asahi Chemical Ind Polishing fluid for metallic film and method for producing semiconductor substrate using the same
TWI259201B (en) * 2001-12-17 2006-08-01 Hitachi Chemical Co Ltd Slurry for metal polishing and method of polishing with the same
JP2005518670A (ja) * 2002-02-26 2005-06-23 アプライド　マテリアルズ　インコーポレイテッド 基板を研磨するための方法及び組成物
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
JP2004128475A (ja) * 2002-08-02 2004-04-22 Jsr Corp 化学機械研磨用水系分散体および半導体装置の製造方法
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
US20070082456A1 (en) * 2003-11-14 2007-04-12 Nobuo Uotani Polishing composition and polishing method
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
US20090093118A1 (en) * 2005-04-14 2009-04-09 Showa Denko K.K. Polishing composition
JP2008546214A (ja) * 2005-06-06 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス

Also Published As

Publication number Publication date
DE112006002327T5 (de) 2008-07-10
KR20080037694A (ko) 2008-04-30
JP5026710B2 (ja) 2012-09-19
KR101291761B1 (ko) 2013-07-31
WO2007026861A1 (ja) 2007-03-08
JP2007096253A (ja) 2007-04-12
TWI402332B (zh) 2013-07-21
US20090127500A1 (en) 2009-05-21

Similar Documents

Publication Publication Date Title
TW200833825A (en) Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
TW200714697A (en) Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device
TW200720414A (en) Polishing composition
TW200730614A (en) Slurry for metal polishing and polishing method of polished film
TW200621960A (en) Polishing composition and polishing method using the same
TW200617151A (en) Polishing composition and polishing method using the same
TW200801046A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, and kit for preparing aqueous dispersion for chemical mechanical polishing
MY118582A (en) Polishing composition
TW501197B (en) Polishing compound for chemical mechanical polishing and method for polishing substrate
TW200619364A (en) Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
TW200738856A (en) Polishing composition and polishing method
TW200736374A (en) Polishing composition and polishing method
TW200516134A (en) Novel slurry for chemical mechanical polishing of metals
TW200700545A (en) Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
WO2006088533A3 (en) Method and composition for electro-chemical-mechanical polishing
TW200740970A (en) Composition and method to polish silicon nitride
MY128556A (en) Use of a wafer edge polishing composition
MY126717A (en) Cmp composition containing silane modified abrasive particles.
DE602005002164D1 (de) Polierzusammensetzung und Poliermethode
TWI264344B (en) Polishing pad
GB0229339D0 (en) Aqueous dispersions of polyurethane-addition polymer hybrid particles especially for use in coating compositions
TW200738855A (en) CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
TW200621957A (en) Polishing composition and process for producing wiring structure using it
TW200710210A (en) Slurry for chemical mechanical polishing of aluminum
WO2005049269A3 (en) Chemical mechanical planarization pad