TW200711136A - Multi-purpose semiconductor device - Google Patents

Multi-purpose semiconductor device

Info

Publication number
TW200711136A
TW200711136A TW095116369A TW95116369A TW200711136A TW 200711136 A TW200711136 A TW 200711136A TW 095116369 A TW095116369 A TW 095116369A TW 95116369 A TW95116369 A TW 95116369A TW 200711136 A TW200711136 A TW 200711136A
Authority
TW
Taiwan
Prior art keywords
write
charge trap
semiconductor device
memory device
dielectric
Prior art date
Application number
TW095116369A
Other languages
English (en)
Inventor
Chih-Hao Wang
Ching-Wei Tsai
Chien-Tai Chan
Min-Hwa Chi
Ta-Hui Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200711136A publication Critical patent/TW200711136A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW095116369A 2005-09-01 2006-05-09 Multi-purpose semiconductor device TW200711136A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71379105P 2005-09-01 2005-09-01
US11/244,463 US20070045719A1 (en) 2005-09-01 2005-10-06 Multi-purpose semiconductor device

Publications (1)

Publication Number Publication Date
TW200711136A true TW200711136A (en) 2007-03-16

Family

ID=37959358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116369A TW200711136A (en) 2005-09-01 2006-05-09 Multi-purpose semiconductor device

Country Status (3)

Country Link
US (1) US20070045719A1 (zh)
CN (1) CN1941415A (zh)
TW (1) TW200711136A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4282691B2 (ja) * 2006-06-07 2009-06-24 株式会社東芝 半導体装置
US7898850B2 (en) * 2007-10-12 2011-03-01 Micron Technology, Inc. Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
US7759715B2 (en) * 2007-10-15 2010-07-20 Micron Technology, Inc. Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle
CN101937848B (zh) * 2009-07-03 2012-06-06 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其制作方法
US8536039B2 (en) * 2010-03-25 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-crystal gate structure for non-volatile memory
US8329525B2 (en) * 2010-10-04 2012-12-11 Stmicroelectronics, Inc. Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltages
CN114093935B (zh) * 2022-01-20 2022-05-13 之江实验室 场效应晶体管、存算一体芯片、电路及设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100973282B1 (ko) * 2003-05-20 2010-07-30 삼성전자주식회사 나노 결정층을 구비하는 소노스 메모리 장치
US7256450B2 (en) * 2004-03-24 2007-08-14 Micron Technology, Inc. NROM memory device with a high-permittivity gate dielectric formed by the low temperature oxidation of metals

Also Published As

Publication number Publication date
US20070045719A1 (en) 2007-03-01
CN1941415A (zh) 2007-04-04

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