TW200711126A - High density hybrid MOSFET device - Google Patents

High density hybrid MOSFET device

Info

Publication number
TW200711126A
TW200711126A TW094147710A TW94147710A TW200711126A TW 200711126 A TW200711126 A TW 200711126A TW 094147710 A TW094147710 A TW 094147710A TW 94147710 A TW94147710 A TW 94147710A TW 200711126 A TW200711126 A TW 200711126A
Authority
TW
Taiwan
Prior art keywords
closed
cells
trenched gates
cell
stripe
Prior art date
Application number
TW094147710A
Other languages
Chinese (zh)
Inventor
Fwu-Iuan Hshieh
Original Assignee
Fwu-Iuan Hshieh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/223,621 external-priority patent/US7592650B2/en
Application filed by Fwu-Iuan Hshieh filed Critical Fwu-Iuan Hshieh
Publication of TW200711126A publication Critical patent/TW200711126A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A hybrid semiconductor power device that includes a plurality of closed power transistor cells each surrounded by a first and second trenched gates constituting substantially a closed cell and a plurality of stripe cells comprising two substantially parallel trenched gates constituting substantially an elongated stripe cell wherein the closed cells and stripe cells constituting neighboring cells sharing trenched gates disposed thereinbetween as common boundary trenched gates. The closed MOSFET cell further includes a source contact disposed substantially at a center portion of the closed cell wherein the trenched gates are maintained a critical distance (CD) away from the source contact.
TW094147710A 2005-09-11 2005-12-30 High density hybrid MOSFET device TW200711126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/223,621 US7592650B2 (en) 2005-06-06 2005-09-11 High density hybrid MOSFET device

Publications (1)

Publication Number Publication Date
TW200711126A true TW200711126A (en) 2007-03-16

Family

ID=37859018

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147710A TW200711126A (en) 2005-09-11 2005-12-30 High density hybrid MOSFET device

Country Status (2)

Country Link
CN (1) CN1929137B (en)
TW (1) TW200711126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781832B2 (en) 2008-05-28 2010-08-24 Ptek Technology Co., Ltd. Trench-type power MOS transistor and integrated circuit utilizing the same
TWI387105B (en) * 2008-11-10 2013-02-21 Anpec Electronics Corp Semiconductor device for improving the peak induced voltage in switching converter

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101452936B (en) * 2007-12-06 2011-12-14 上海华虹Nec电子有限公司 Single source multiple leakage MOS device
CN101727526A (en) * 2009-12-23 2010-06-09 北京中星微电子有限公司 Method and device for designing MOS tube layout and chip
CN102044567B (en) * 2010-11-03 2012-07-25 无锡中星微电子有限公司 MOS tube and layout design method thereof
CN105990423A (en) * 2015-02-02 2016-10-05 无锡华润上华半导体有限公司 Transverse dual-field-effect tube
CN108899318B (en) * 2018-08-30 2024-01-26 无锡摩斯法特电子有限公司 Serpentine layout structure and layout method for increasing VDMOS channel density

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781832B2 (en) 2008-05-28 2010-08-24 Ptek Technology Co., Ltd. Trench-type power MOS transistor and integrated circuit utilizing the same
TWI387105B (en) * 2008-11-10 2013-02-21 Anpec Electronics Corp Semiconductor device for improving the peak induced voltage in switching converter

Also Published As

Publication number Publication date
CN1929137B (en) 2011-06-15
CN1929137A (en) 2007-03-14

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