TW200710653A - Memory device - Google Patents
Memory deviceInfo
- Publication number
- TW200710653A TW200710653A TW095118429A TW95118429A TW200710653A TW 200710653 A TW200710653 A TW 200710653A TW 095118429 A TW095118429 A TW 095118429A TW 95118429 A TW95118429 A TW 95118429A TW 200710653 A TW200710653 A TW 200710653A
- Authority
- TW
- Taiwan
- Prior art keywords
- data
- code
- memory device
- error
- stores
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005157522A JP4734033B2 (ja) | 2005-05-30 | 2005-05-30 | 記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710653A true TW200710653A (en) | 2007-03-16 |
TWI312464B TWI312464B (zh) | 2009-07-21 |
Family
ID=37484099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118429A TW200710653A (en) | 2005-05-30 | 2006-05-24 | Memory device |
Country Status (5)
Country | Link |
---|---|
US (1) | US7239547B2 (zh) |
JP (1) | JP4734033B2 (zh) |
KR (1) | KR20060124598A (zh) |
CN (1) | CN1873619A (zh) |
TW (1) | TW200710653A (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7512864B2 (en) * | 2005-09-30 | 2009-03-31 | Josef Zeevi | System and method of accessing non-volatile computer memory |
US7469368B2 (en) * | 2005-11-29 | 2008-12-23 | Broadcom Corporation | Method and system for a non-volatile memory with multiple bits error correction and detection for improving production yield |
US7840878B1 (en) | 2006-04-11 | 2010-11-23 | Marvell International Ltd. | Systems and methods for data-path protection |
JP4349532B2 (ja) * | 2007-04-11 | 2009-10-21 | エヌイーシーコンピュータテクノ株式会社 | メモリ制御装置、メモリ制御方法、情報処理システム、そのプログラム及び記憶媒体 |
JP4564520B2 (ja) * | 2007-08-31 | 2010-10-20 | 株式会社東芝 | 半導体記憶装置およびその制御方法 |
DE102009031310B4 (de) * | 2008-07-24 | 2019-12-19 | Atmel Corp. | Speichersystem, Leseverstärker, Verwendung und Verfahren zur Fehlerdetektion mittels Parity-Bits eines Blockcodes |
KR101466270B1 (ko) * | 2008-09-19 | 2014-11-28 | 삼성전자주식회사 | 비휘발성 메모리 시스템 및 그것의 데이터 처리 방법 |
JP5174603B2 (ja) * | 2008-09-30 | 2013-04-03 | 株式会社日立製作所 | メモリの誤り訂正方法,誤り検出方法、及びそれを用いたコントローラ |
CN101477838B (zh) * | 2008-12-31 | 2014-07-30 | 深圳市同洲电子股份有限公司 | 一种与非快闪记忆体状态检测装置、系统及电子设备 |
JP5521437B2 (ja) * | 2009-01-29 | 2014-06-11 | 日本電気株式会社 | 携帯端末装置、ソフトウェア更新方法及びプログラム |
US8413010B1 (en) * | 2009-03-12 | 2013-04-02 | Western Digital Technologies, Inc. | Data storage device employing high quality metrics when decoding logical block address appended to a data sector |
US20110072333A1 (en) * | 2009-09-24 | 2011-03-24 | Innostor Technology Corporation | Control method for flash memory based on variable length ecc |
JP5401516B2 (ja) * | 2011-08-16 | 2014-01-29 | 株式会社日立製作所 | 無線通信装置、及びそれを使った列車制御システム |
TWI473103B (zh) * | 2011-09-14 | 2015-02-11 | 威剛科技股份有限公司 | 快閃記憶體儲存裝置及其不良儲存區域的判定方法 |
EP2608036A1 (en) | 2011-12-22 | 2013-06-26 | Thomson Licensing | Method and system for managing error detection and correction |
CN102541677A (zh) * | 2011-12-29 | 2012-07-04 | 苏州国芯科技有限公司 | 提高nandflash存储设备对照表加载速度的实现方法 |
US9740485B2 (en) | 2012-10-26 | 2017-08-22 | Micron Technology, Inc. | Apparatuses and methods for memory operations having variable latencies |
US9754648B2 (en) * | 2012-10-26 | 2017-09-05 | Micron Technology, Inc. | Apparatuses and methods for memory operations having variable latencies |
US9734097B2 (en) | 2013-03-15 | 2017-08-15 | Micron Technology, Inc. | Apparatuses and methods for variable latency memory operations |
US9727493B2 (en) | 2013-08-14 | 2017-08-08 | Micron Technology, Inc. | Apparatuses and methods for providing data to a configurable storage area |
JP5657079B1 (ja) | 2013-10-24 | 2015-01-21 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US10365835B2 (en) | 2014-05-28 | 2019-07-30 | Micron Technology, Inc. | Apparatuses and methods for performing write count threshold wear leveling operations |
KR102229024B1 (ko) | 2014-12-03 | 2021-03-17 | 삼성전자주식회사 | 스스로 에러를 검출하고 로그를 저장할 수 있는 데이터 저장 장치와 이를 포함하는 시스템 |
TWI571742B (zh) | 2015-10-07 | 2017-02-21 | 慧榮科技股份有限公司 | 資料儲存裝置及資料維護方法 |
CN106815153B (zh) * | 2015-12-02 | 2022-04-22 | 国民技术股份有限公司 | 一种安全存储方法、装置和系统 |
KR20200092036A (ko) * | 2019-01-24 | 2020-08-03 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
US11537464B2 (en) * | 2019-06-14 | 2022-12-27 | Micron Technology, Inc. | Host-based error correction |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817197A (ja) * | 1994-06-30 | 1996-01-19 | Fujitsu Ltd | 半導体記憶装置 |
JP3576625B2 (ja) * | 1995-02-28 | 2004-10-13 | 株式会社東芝 | フラッシュメモリカードのデータ管理方法およびそのデータ管理方法を使用したデータ処理装置 |
WO1997032253A1 (en) * | 1996-02-29 | 1997-09-04 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
JP3072722B2 (ja) * | 1997-06-20 | 2000-08-07 | ソニー株式会社 | フラッシュメモリを用いるデータ管理装置及びデータ管理方法並びにフラッシュメモリを用いる記憶媒体 |
JP3233079B2 (ja) * | 1997-09-30 | 2001-11-26 | ソニー株式会社 | データ処理システム及びデータ処理方法 |
WO2001022232A1 (fr) * | 1999-09-17 | 2001-03-29 | Hitachi, Ltd. | Memoire dans laquelle le nombre de corrections d'erreurs est enregistre |
JP4059472B2 (ja) * | 2001-08-09 | 2008-03-12 | 株式会社ルネサステクノロジ | メモリカード及びメモリコントローラ |
JP3699942B2 (ja) | 2002-03-25 | 2005-09-28 | 株式会社東芝 | メモリ管理方式およびメモリ管理装置 |
KR100512178B1 (ko) * | 2003-05-28 | 2005-09-02 | 삼성전자주식회사 | 플렉서블한 열 리던던시 스킴을 갖는 반도체 메모리 장치 |
US7409623B2 (en) * | 2004-11-04 | 2008-08-05 | Sigmatel, Inc. | System and method of reading non-volatile computer memory |
-
2005
- 2005-05-30 JP JP2005157522A patent/JP4734033B2/ja not_active Expired - Fee Related
- 2005-09-19 US US11/228,290 patent/US7239547B2/en not_active Expired - Fee Related
-
2006
- 2006-05-24 TW TW095118429A patent/TW200710653A/zh not_active IP Right Cessation
- 2006-05-29 KR KR1020060047991A patent/KR20060124598A/ko not_active Application Discontinuation
- 2006-05-30 CN CNA2006100877521A patent/CN1873619A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20060124598A (ko) | 2006-12-05 |
US7239547B2 (en) | 2007-07-03 |
US20060282717A1 (en) | 2006-12-14 |
CN1873619A (zh) | 2006-12-06 |
JP4734033B2 (ja) | 2011-07-27 |
TWI312464B (zh) | 2009-07-21 |
JP2006331303A (ja) | 2006-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |