TW200707757A - Method for forming contact hole and method for fabricating thin film transistor plate using the same - Google Patents
Method for forming contact hole and method for fabricating thin film transistor plate using the sameInfo
- Publication number
- TW200707757A TW200707757A TW095125847A TW95125847A TW200707757A TW 200707757 A TW200707757 A TW 200707757A TW 095125847 A TW095125847 A TW 095125847A TW 95125847 A TW95125847 A TW 95125847A TW 200707757 A TW200707757 A TW 200707757A
- Authority
- TW
- Taiwan
- Prior art keywords
- contact hole
- thin film
- film transistor
- same
- forming contact
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050064490A KR20070009329A (ko) | 2005-07-15 | 2005-07-15 | 컨택홀 형성 방법 및 이를 이용한 박막 트랜지스터 기판의제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200707757A true TW200707757A (en) | 2007-02-16 |
Family
ID=37609707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095125847A TW200707757A (en) | 2005-07-15 | 2006-07-14 | Method for forming contact hole and method for fabricating thin film transistor plate using the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070015319A1 (zh) |
JP (1) | JP2007027710A (zh) |
KR (1) | KR20070009329A (zh) |
CN (1) | CN1897248A (zh) |
TW (1) | TW200707757A (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080068240A (ko) * | 2007-01-18 | 2008-07-23 | 삼성전자주식회사 | 박막 트랜지스터 기판의 제조 방법 |
US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
JP5424724B2 (ja) * | 2009-06-04 | 2014-02-26 | 富士フイルム株式会社 | 電界効果型トランジスタの製造方法、電界効果型トランジスタ、表示装置、及び電磁波検出器 |
EP2284891B1 (en) * | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
KR20130011856A (ko) * | 2011-07-22 | 2013-01-30 | 삼성디스플레이 주식회사 | 표시기판 및 그 제조방법 |
KR101916949B1 (ko) * | 2011-11-03 | 2018-11-09 | 엘지디스플레이 주식회사 | 프린지 필드형 액정표시장치 및 그 제조방법 |
US9224674B2 (en) * | 2011-12-15 | 2015-12-29 | Intel Corporation | Packaged semiconductor die with bumpless die-package interface for bumpless build-up layer (BBUL) packages |
KR101972170B1 (ko) | 2012-11-19 | 2019-04-25 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
CN103413782B (zh) * | 2013-07-23 | 2015-08-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法和显示面板 |
CN110854171B (zh) * | 2019-11-21 | 2022-09-13 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5658425A (en) * | 1991-10-16 | 1997-08-19 | Lam Research Corporation | Method of etching contact openings with reduced removal rate of underlying electrically conductive titanium silicide layer |
US6756324B1 (en) * | 1997-03-25 | 2004-06-29 | International Business Machines Corporation | Low temperature processes for making electronic device structures |
JP2002270586A (ja) * | 2001-03-08 | 2002-09-20 | Tokyo Electron Ltd | 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス |
US6933568B2 (en) * | 2002-05-17 | 2005-08-23 | Samsung Electronics Co., Ltd. | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
US20040224241A1 (en) * | 2003-02-03 | 2004-11-11 | Samsung Electronics Co., Ltd. | Thin film transistor array panel, manufacturing method thereof, and mask therefor |
US7285503B2 (en) * | 2004-06-21 | 2007-10-23 | Applied Materials, Inc. | Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition |
-
2005
- 2005-07-15 KR KR1020050064490A patent/KR20070009329A/ko not_active Application Discontinuation
-
2006
- 2006-06-28 JP JP2006178784A patent/JP2007027710A/ja active Pending
- 2006-07-12 US US11/484,934 patent/US20070015319A1/en not_active Abandoned
- 2006-07-14 TW TW095125847A patent/TW200707757A/zh unknown
- 2006-07-17 CN CNA2006100993289A patent/CN1897248A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20070015319A1 (en) | 2007-01-18 |
JP2007027710A (ja) | 2007-02-01 |
CN1897248A (zh) | 2007-01-17 |
KR20070009329A (ko) | 2007-01-18 |
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